专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07115655B2 Pyranocoumarin derivatives 失效
标题翻译：吡喃香豆素衍生物
公开(公告)号：US07115655B2
公开(公告)日：2006-10-03
申请号：US10510923
申请日：2002-04-09
申请人： Jeong-Seon Yoon , Ji-Young Lee , Young-Choong Kim , Ki-Yong Lee , Sang-Hyun Sung , Hak-Joong Kim , So-Young Kang
发明人： Jeong-Seon Yoon , Ji-Young Lee , Young-Choong Kim , Ki-Yong Lee , Sang-Hyun Sung , Hak-Joong Kim , So-Young Kang
IPC分类号： A61K31/35
CPC分类号： C07D493/04
摘要： The present invention relates to compounds of the following formula (I) or pharmaceutically acceptable salts thereof. The present invention also relates to use for a cognitive-enhancing agent of compounds of the following formula (I) or pharmaceutically acceptable salts thereof and to a process for preparing the same. Further, the present invention relates to use for a congnitive-enhancing agent of decursin of the following formula (II) or pharmaceutically acceptable salts thereof. In addition, the present invention relates to extracts of Angelica gigantis Radix comprising decursin of the following formula (II), having cognitive-enhancing effects.
摘要翻译：本发明涉及下式（I）的化合物或其药学上可接受的盐。本发明还涉及下式（I）化合物或其药学上可接受的盐的认知增强剂及其制备方法的用途。此外，本发明涉及下式（II）的前胡素的认知增强剂或其药学上可接受的盐的用途。此外，本发明涉及包含具有认知增强作用的下式（II）的前胡素的当归提取物。

2. 发明申请

US20050222245A1 Pyranocoumarin derivatives 失效
标题翻译：吡喃香豆素衍生物
公开(公告)号：US20050222245A1
公开(公告)日：2005-10-06
申请号：US10510923
申请日：2002-04-09
申请人： Jeong-Seon Yoon , Ji-Young Lee , Young-Choong Kim , Ki-Yong Lee , Sang-Hyun Sung , Hak-Joong Kim , So-Young Kang
发明人： Jeong-Seon Yoon , Ji-Young Lee , Young-Choong Kim , Ki-Yong Lee , Sang-Hyun Sung , Hak-Joong Kim , So-Young Kang
IPC分类号： C07D493/04 , A61K31/366 , C07D493/02
CPC分类号： C07D493/04
摘要： The present invention relates to compounds of the following formula (I) or pharmaceutically acceptable salts thereof. The present invention also relates to use for a cognitive-enhancing agent of compounds of the following formula (I) or pharmaceutically acceptable salts thereof and to a process for preparing the same. Further, the present invention relates to use for a congnitive-enhancing agent of decursin of the following formula (II) or pharmaceutically acceptable salts thereof. In addition, the present invention relates to extracts of Angelica gigantis Radix comprising decursin of the following formula (II), having cognitive-enhancing effects.
摘要翻译：本发明涉及下式（I）的化合物或其药学上可接受的盐。本发明还涉及下式（I）化合物或其药学上可接受的盐的认知增强剂及其制备方法的用途。此外，本发明涉及下式（II）的前胡素的认知增强剂或其药学上可接受的盐的用途。此外，本发明涉及包含具有认知增强作用的下式（II）的前胡素的当归提取物。

3. 发明申请

US20130199570A1 CLEANING ROBOT SYSTEM AND ITS METHOD FOR CONTROLING 审中-公开
标题翻译：清洁机器人系统及其控制方法
公开(公告)号：US20130199570A1
公开(公告)日：2013-08-08
申请号：US13825150
申请日：2011-04-27
申请人： Man-Hee Lee , Ki-Yong Lee , Chang-Nam Song
发明人： Man-Hee Lee , Ki-Yong Lee , Chang-Nam Song
IPC分类号： A47L9/00
CPC分类号： A47L9/009 , A47L2201/022 , A47L2201/04 , G05D1/0234 , G05D2201/0203
摘要： Disclosed are a cleaning robot system and its method for controlling which make it possible to reliably and quickly clean with the aid of the cleaning robot. The cleaning robot system comprises at least one external device each formed of an indicator and a virtual wall setting function, with the aid of which cleaning work can be performed by the unit of blocks about a cleaning area reference point, not leaving non-cleaned area behind. Since the access of the cleaning robot can be restricted by means of a virtual wall set by an external device, any damages of furniture due to a collision of the cleaning robot can be prevented, and the cleaning robot can be barred from escaping from the set cleaning area.
摘要翻译：公开了一种清洁机器人系统及其控制方法，其使得可以借助于清洁机器人可靠且快速地清洁。清洁机器人系统包括至少一个外部设备，每个外部设备由指示器和虚拟墙壁设置功能构成，借助于这些单元可以通过清洁区域参考点执行清洁工作，而不会留下未清洁区域背后。由于可以通过外部设备设置的虚拟壁来限制清洁机器人的通路，所以可以防止由于清洁机器人的碰撞而导致的家具的任何损坏，并且可以禁止清洁机器人从集合中逸出清洁区域。

4. 发明授权

US08409887B2 Organic light emitting diode display device and method of fabricating the same 有权
公开(公告)号：US08409887B2
公开(公告)日：2013-04-02
申请号：US12713846
申请日：2010-02-26
申请人： Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Soo-Beom Jo , Dong-Hyun Lee , Kil-Won Lee , Maxim Lisachenko , Yun-Mo Chung , Bo-Kyung Choi , Jong-Ryuk Park , Ki-Yong Lee
发明人： Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Soo-Beom Jo , Dong-Hyun Lee , Kil-Won Lee , Maxim Lisachenko , Yun-Mo Chung , Bo-Kyung Choi , Jong-Ryuk Park , Ki-Yong Lee
IPC分类号： H01L21/00
CPC分类号： H01L51/52 , H01L27/3265 , H01L2227/323
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

5. 发明授权

US08384087B2 Thin film transistor, organic light emitting diode display device having the same, and method of fabricating the same 有权
标题翻译：薄膜晶体管，具有该薄膜晶体管的有机发光二极管显示装置及其制造方法
公开(公告)号：US08384087B2
公开(公告)日：2013-02-26
申请号：US12805995
申请日：2010-08-27
申请人： Yong-Duck Son , Ki-Yong Lee , Joon-Hoo Choi , Min-Jae Jeong , Seung-Kyu Park , Kil-Won Lee , Jae-Wan Jung , Dong-Hyun Lee , Byung-Soo So , Hyun-Woo Koo , Ivan Maidanchuk , Jong-Won Hong , Heung-Yeol Na , Seok-Rak Chang
发明人： Yong-Duck Son , Ki-Yong Lee , Joon-Hoo Choi , Min-Jae Jeong , Seung-Kyu Park , Kil-Won Lee , Jae-Wan Jung , Dong-Hyun Lee , Byung-Soo So , Hyun-Woo Koo , Ivan Maidanchuk , Jong-Won Hong , Heung-Yeol Na , Seok-Rak Chang
IPC分类号： H01L27/14
CPC分类号： H01L29/66757 , H01L27/1277 , H01L27/3262
摘要： A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.
摘要翻译：薄膜晶体管包括衬底，衬底上的缓冲层，包括源极/漏极区域和缓冲层上的沟道区域的半导体层，对应于沟道区域的栅极绝缘层，对应于沟道区域的栅电极以及与半导体层电连接的源极/漏极。沟道区域的多晶硅层可以仅包括低角度晶界，并且可以在离开沟道区域的半导体层的区域中设置高角度晶界。

6. 发明授权

US08350267B2 Flat panel display 有权
标题翻译：平板显示器
公开(公告)号：US08350267B2
公开(公告)日：2013-01-08
申请号：US12104749
申请日：2008-04-17
申请人： Jae-Bon Koo , Ji-Yong Park , Sang-Il Park , Ki-Yong Lee , Ul-Ho Lee
发明人： Jae-Bon Koo , Ji-Yong Park , Sang-Il Park , Ki-Yong Lee , Ul-Ho Lee
IPC分类号： H01L27/14
CPC分类号： G09G3/3275 , H01L27/1214 , H01L29/78621 , H01L29/78624 , H01L29/78645 , H01L29/78672 , H01L29/78696
摘要： A high-speed flat panel display has thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, which have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One thin film transistor has a zigzag shape in its gate region or drain region or has an offset region.
摘要翻译：高速平板显示器在其中排列有多个像素的像素阵列部分中具有薄膜晶体管，以及用于驱动像素阵列部分的像素的驱动电路部分，其具有彼此不同的电阻值或具有不同的像素阵列部分几何结构比彼此。平板显示器包括其中布置有多个像素的像素阵列部分和用于驱动像素阵列部分的像素的驱动电路部分。像素阵列部分和驱动电路部分中的薄膜晶体管在其栅极区域或漏极区域中具有彼此不同的电阻值，或者具有彼此不同的几何结构。一个薄膜晶体管在其栅极区域或漏极区域中具有锯齿形状或具有偏移区域。

7. 发明申请

US20120326157A1 Method of Manufacturing Thin Film Transistor, Thin Film Transistor Manufactured Using the Method, Method of Manufacturing Organic Light-Emitting Display Apparatus, and Organic Light-Emitting Display Apparatus Manufactured Using the Method 有权
标题翻译：使用该方法制造薄膜晶体管的薄膜晶体管的制造方法，制造有机发光显示装置的方法和使用该方法制造的有机发光显示装置
公开(公告)号：US20120326157A1
公开(公告)日：2012-12-27
申请号：US13313555
申请日：2011-12-07
申请人： Byoung-Keon Park , Jong-Ryuk Park , Tak-Young Lee , Jin-Wook Seo , Ki-Yong Lee
发明人： Byoung-Keon Park , Jong-Ryuk Park , Tak-Young Lee , Jin-Wook Seo , Ki-Yong Lee
IPC分类号： H01L29/786 , H01L33/08 , H01L33/16 , H01L21/336
CPC分类号： H01L27/1288 , H01L27/3262 , H01L29/66757
摘要： A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that have a predetermined shape by simultaneously patterning the polycrystalline silicon layer, the insulating layer, and the first conductive layer, wherein the polycrystalline silicon layer is further etched to produce an undercut recessed a distance compared to sidewalls of the insulating layer and the first conductive layer, forming source and drain regions within the semiconductor layer by doping corresponding portions of the semiconductor layer, forming an interlayer insulating layer on the gate electrode, the interlayer insulating layer covering the gate insulating layer and forming source and drain electrodes that are electrically connected to source and drain regions respectively.
摘要翻译：一种制造TFT的方法，包括在衬底上形成缓冲层，非晶硅层，绝缘层和第一导电层，通过使非晶硅层结晶形成多晶硅层，形成半导体层，栅极绝缘层和通过同时构图多晶硅层，绝缘层和第一导电层而具有预定形状的栅电极，其中进一步蚀刻多晶硅层以产生凹陷距离相比于绝缘层和第一导电层，通过掺杂半导体层的相应部分在半导体层内形成源极和漏极区域，在栅电极上形成层间绝缘层，覆盖栅极绝缘层的层间绝缘层和形成源极和漏极与源极和漏极电连接的电极地区。

8. 发明申请

US20120000986A1 CANISTER FOR DEPOSITION APPARATUS AND DEPOSITION APPARATUS USING SAME 审中-公开
标题翻译：用于沉积装置和沉积装置的装置
公开(公告)号：US20120000986A1
公开(公告)日：2012-01-05
申请号：US13009279
申请日：2011-01-19
申请人： Min-Jae JEONG , Ki-Yong Lee , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo Soo , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
发明人： Min-Jae JEONG , Ki-Yong Lee , Jong-Won Hong , Heung-Yeol Na , Eu-Gene Kang , Seok-Rak Chang , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo Soo , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
IPC分类号： F24D5/00
CPC分类号： C23C16/4481 , C23C16/45525 , C23C16/52
摘要： A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.
摘要翻译：一种用于沉积设备的罐和使用其的沉积设备，更具体地，涉及一种用于沉积设备的罐，其可以提供均匀量的源材料，所述源材料包含在供应到沉积室中的反应气体中，并且提高了供应源材料和使用该罐的沉积装置。沉积设备包括沉积室; 向所述沉积室供应反应气体的罐; 以及载体气体供给器，用于将载气供应到罐中，其中罐包括主体，加热单元加热主体，温度测量单元设置在主体下方。

9. 发明授权

US08049220B2 Flat panel display device with polycrystalline silicon thin film transistor 有权
标题翻译：具有多晶硅薄膜晶体管的平板显示装置
公开(公告)号：US08049220B2
公开(公告)日：2011-11-01
申请号：US11942460
申请日：2007-11-19
申请人： Ji-Yong Park , Ul-Ho Lee , Jae-Bon Koo , Ki-Yong Lee , Hye-Hyang Park
发明人： Ji-Yong Park , Ul-Ho Lee , Jae-Bon Koo , Ki-Yong Lee , Hye-Hyang Park
IPC分类号： H01L27/14
CPC分类号： H01L29/78696 , G02F1/13454 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The present invention relates to a flat panel display device comprising a polycrystalline silicon thin film transistor and provides a flat panel display device having improved characteristics by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a driving circuit portion and active channel regions of pixel portion. This may be achieved by having a different number of grain boundaries included in the polycrystalline silicon thin film formed in active channel regions of a switching thin film transistor and a driving thin film transistor formed in the pixel portion, and by having a different number of grain boundaries included in polycrystalline silicon thin film formed in active channel regions of a thin film transistor for driving the pixel portion for each red, green and blue of the pixel portion. Further, this may be achieved by having a different number of grain boundaries included in polycrystalline silicon formed in active channel regions of an NMOS thin film transistor and a PMOS thin film transistor for forming CMOS transistor used in flat panel display device, thereby constructing a thin film transistor to obtain the improved characteristics for each transistor.
摘要翻译：本发明涉及一种包括多晶硅薄膜晶体管的平板显示装置，通过在驱动电路的有源沟道区域中形成的多晶硅薄膜中包含不同数量的晶界，提供具有改进特性的平板显示装置像素部分和有源沟道区域。这可以通过在形成在像素部分中的开关薄膜晶体管和驱动薄膜晶体管的有源沟道区域中形成的多晶硅薄膜中包含不同数量的晶界，并且通过具有不同数量的晶粒来实现包括在形成在用于驱动像素部分的每个红，绿和蓝的像素部分的薄膜晶体管的有源沟道区域中的多晶硅薄膜中的边界。此外，这可以通过在NMOS薄膜晶体管的有源沟道区域中形成的多晶硅中包含不同数量的晶界和用于形成用于平板显示器件的CMOS晶体管的PMOS薄膜晶体管来实现，从而构造薄的以获得每个晶体管的改进特性。

10. 发明申请

US20110227078A1 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110227078A1
公开(公告)日：2011-09-22
申请号：US13034818
申请日：2011-02-25
申请人： Byoung-Keon PARK , Jin-Wook Seo , Ki-Yong Lee , Yun-Mo Chung , Jong-Ryuk Park , Tak-Young Lee , Dong-Hyun Lee , Kil-Won Lee , Byung-Soo So , Min-Jae Jeong , Yong-Duck Son , Seung-Kyu Park , Jae-Wan Jung
发明人： Byoung-Keon PARK , Jin-Wook Seo , Ki-Yong Lee , Yun-Mo Chung , Jong-Ryuk Park , Tak-Young Lee , Dong-Hyun Lee , Kil-Won Lee , Byung-Soo So , Min-Jae Jeong , Yong-Duck Son , Seung-Kyu Park , Jae-Wan Jung
IPC分类号： H01L51/56 , H01L51/52
CPC分类号： H01L27/3262 , H01L27/12 , H01L27/1248 , H01L27/3258 , H01L27/326
摘要： A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.
摘要翻译：一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，第一绝缘层包括在第一半导体层和第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式