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1. 外观设计

USD614152S1 Substrate transfer device for semiconductor deposition apparatus 有权
标题翻译：半导体沉积装置用基板转印装置
公开(公告)号：USD614152S1
公开(公告)日：2010-04-20
申请号：US29331021
申请日：2009-01-16
申请人： Jeong Ho Lee , Sang Jin Jeong , Young Seok Choi
设计人： Jeong Ho Lee , Sang Jin Jeong , Young Seok Choi

2. 发明申请

US20130052348A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20130052348A1
公开(公告)日：2013-02-28
申请号：US13598998
申请日：2012-08-30
申请人： Seung Woo Choi , Gwang Lae Park , Chun Soo Lee , Jeong Ho Lee , Young Seok Choi
发明人： Seung Woo Choi , Gwang Lae Park , Chun Soo Lee , Jeong Ho Lee , Young Seok Choi
IPC分类号： C23C16/455 , B23P11/00
CPC分类号： C23C16/45591 , C23C16/45504 , C23C16/45527 , H01L21/68742 , H01L21/68792
摘要： A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. The reactor may include a reaction chamber that defines a reaction space and a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at a first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.
摘要翻译：公开了一种被配置成使基板交替重复表面反应的反应器的反应器。反应器可以包括限定反应空间和气体流量控制引导结构的反应室; 和基板支架。气体流量控制引导件包括一个或多个通道。当通道从入口延伸到反应空间时，每个通道变宽。至少一个通道构造成在反应空间的周边的第一部分处产生不均匀的层流，使得层流包括提供不同量的流体的多个流动路径。反应室可以包括可以彼此分离的反应器基座和反应器盖; 以及被配置为独立地调整反应器基座的至少三个部分以向反应器空间提供基本上完美的密封的驱动器。

3. 发明授权

US08545940B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08545940B2
公开(公告)日：2013-10-01
申请号：US13598998
申请日：2012-08-30
申请人： Seung Woo Choi , Gwang Lae Park , Chun Soo Lee , Jeong Ho Lee , Young Seok Choi
发明人： Seung Woo Choi , Gwang Lae Park , Chun Soo Lee , Jeong Ho Lee , Young Seok Choi
IPC分类号： C23C16/18 , C23C16/455 , C23C16/06
CPC分类号： C23C16/45591 , C23C16/45504 , C23C16/45527 , H01L21/68742 , H01L21/68792
摘要： A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. The reactor may include a reaction chamber that defines a reaction space and a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at a first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.
摘要翻译：公开了一种被配置成使基板交替重复表面反应的反应器的反应器。反应器可以包括限定反应空间和气体流量控制引导结构的反应室; 和基板支架。气体流量控制引导件包括一个或多个通道。当通道从入口延伸到反应空间时，每个通道变宽。至少一个通道构造成在反应空间的周边的第一部分处产生不均匀的层流，使得层流包括提供不同量的流体的多个流动路径。反应室可以包括可以彼此分离的反应器基座和反应器盖; 以及被配置为独立地调整反应器基座的至少三个部分以向反应器空间提供基本上完美的密封的驱动器。

4. 发明授权

US08282735B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08282735B2
公开(公告)日：2012-10-09
申请号：US12324178
申请日：2008-11-26
申请人： Seung Woo Choi , Gwang Lae Park , Chun Soo Lee , Jeong Ho Lee , Young Seok Choi
发明人： Seung Woo Choi , Gwang Lae Park , Chun Soo Lee , Jeong Ho Lee , Young Seok Choi
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45591 , C23C16/45504 , C23C16/45527 , H01L21/68742 , H01L21/68792
摘要： A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. In one embodiment, the reactor includes a reaction chamber that defines a reaction space; one or more inlets; an exhaust outlet; a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels, each of which extends from a respective one of the one or more inlets to a first portion of a periphery of the reaction space. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at the first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.
摘要翻译：公开了一种被配置成使基板交替重复表面反应的反应器的反应器。在一个实施方案中，反应器包括限定反应空间的反应室; 一个或多个入口; 排气口气流控制引导结构; 和基板支架。气体流量控制引导件包括一个或多个通道，每个通道从一个或多个入口中的相应一个入口延伸到反应空间的外围的第一部分。当通道从入口延伸到反应空间时，每个通道变宽。至少一个通道构造成在反应空间的周边的第一部分处产生不均匀的层流，使得层流包括提供不同量的流体的多个流动路径。反应室可以包括可以彼此分离的反应器基座和反应器盖; 以及被配置为独立地调整反应器基座的至少三个部分以向反应器空间提供基本上完美的密封的驱动器。

5. 发明申请

US20090136665A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20090136665A1
公开(公告)日：2009-05-28
申请号：US12324178
申请日：2008-11-26
申请人： Seung Woo Choi , Gwang Lae Park , Chun Soo Lee , Jeong Ho Lee , Young Seok Choi
发明人： Seung Woo Choi , Gwang Lae Park , Chun Soo Lee , Jeong Ho Lee , Young Seok Choi
IPC分类号： C23C16/44 , C23C16/54
CPC分类号： C23C16/45591 , C23C16/45504 , C23C16/45527 , H01L21/68742 , H01L21/68792
摘要： A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. In one embodiment, the reactor includes a reaction chamber that defines a reaction space; one or more inlets; an exhaust outlet; a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels, each of which extends from a respective one of the one or more inlets to a first portion of a periphery of the reaction space. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at the first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.
摘要翻译：公开了一种被配置成使基板交替重复表面反应的反应器的反应器。在一个实施方案中，反应器包括限定反应空间的反应室; 一个或多个入口; 排气口气流控制引导结构; 和基板支架。气体流量控制引导件包括一个或多个通道，每个通道从一个或多个入口中的相应一个入口延伸到反应空间的外围的第一部分。当通道从入口延伸到反应空间时，每个通道变宽。至少一个通道构造成在反应空间的周边的第一部分处产生不均匀的层流，使得层流包括提供不同量的流体的多个流动路径。反应室可以包括可以彼此分离的反应器基座和反应器盖; 以及被配置为独立地调整反应器基座的至少三个部分以向反应器空间提供基本上完美的密封的驱动器。

6. 发明授权

US09062375B2 Lateral flow atomic layer deposition apparatus and atomic layer deposition method using the same 有权
标题翻译：横流原子层沉积装置和使用其的原子层沉积方法
公开(公告)号：US09062375B2
公开(公告)日：2015-06-23
申请号：US13587061
申请日：2012-08-16
申请人： Woo Chan Kim , Jeong Ho Lee , Sang Jin Jeong , Hyun Soo Jang
发明人： Woo Chan Kim , Jeong Ho Lee , Sang Jin Jeong , Hyun Soo Jang
IPC分类号： C23C16/00 , C23C16/455
CPC分类号： C23C16/45527 , C23C16/45504 , C23C16/45548 , C23C16/4558 , C23C16/45591
摘要： A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate.
摘要翻译：侧流原子层沉积（ALD）装置具有两个气体流入通道和两个气体流出通道，其连接到基于其中沉积薄膜的基底对称形成的两个气体出口，从而不同地引导流动方向在基板上流动的气体。因此，与供给的原料气体和反应气体在基板上仅沿一个方向恒定流动的常规侧流ALD装置相比，沉积膜的均匀性得到改善。

7. 外观设计

USD614593S1 Substrate support for a semiconductor deposition apparatus 有权
标题翻译：用于半导体沉积设备的衬底支撑
公开(公告)号：USD614593S1
公开(公告)日：2010-04-27
申请号：US29331023
申请日：2009-01-16
申请人： Jeong Ho Lee , Sang Jin Jeong , Dong Rak Jung
设计人： Jeong Ho Lee , Sang Jin Jeong , Dong Rak Jung

8. 外观设计

USD606952S1 Plasma inducing plate for semiconductor deposition apparatus 有权
标题翻译：用于半导体沉积装置的等离子体诱导板
公开(公告)号：USD606952S1
公开(公告)日：2009-12-29
申请号：US29331022
申请日：2009-01-16
申请人： Jeong Ho Lee , Sang Jin Jeong , Woo Chan Kim
设计人： Jeong Ho Lee , Sang Jin Jeong , Woo Chan Kim

9. 外观设计

USD702654S1 Plasma power transfer rod for a semiconductor deposition apparatus 有权
标题翻译：用于半导体沉积设备的等离子体功率传递棒
公开(公告)号：USD702654S1
公开(公告)日：2014-04-15
申请号：US29424575
申请日：2012-06-13
申请人： Jeong Ho Lee , Woo Chan Kim , Sang Jin Jeong , Hyun Soo Jang
设计人： Jeong Ho Lee , Woo Chan Kim , Sang Jin Jeong , Hyun Soo Jang

10. 发明授权

US08844779B2 Storage apparatus for vehicle 有权
标题翻译：车载存储设备
公开(公告)号：US08844779B2
公开(公告)日：2014-09-30
申请号：US13323587
申请日：2011-12-12
申请人： Dong Eun Cha , Seung Mok Lee , Jeong Ho Lee , Yeong Sun Choi
发明人： Dong Eun Cha , Seung Mok Lee , Jeong Ho Lee , Yeong Sun Choi
IPC分类号： B60R5/04 , B60R3/02
CPC分类号： B60R3/02 , B60R5/04
摘要： A storage apparatus for a vehicle may include a rear bumper having a back beam mounted under an inner space thereof, a storage case provided in a space above the rear bumper and drawn-out/drawn-in by being sled to the outside in the state in which a load is supported by the top of the back beam, and a bumper door rotatably provided on an end of the storage case so as to open and close the storage case and formed so that a portion exposed to the outside coincides with an outer surface of the rear bumper.
摘要翻译：一种用于车辆的存储装置可以包括后保险杠，后保险杠安装在其内部空间的后梁上，存储箱设置在后保险杠上方的空间中，并且在该状态下通过滑动到外部被拉出/拉入其中负载由后梁的顶部支撑，以及保险杠门，其可旋转地设置在存储箱的端部上，以便打开和关闭存储盒并形成为使得暴露于外部的部分与外部重合后保险杠表面。

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