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1. 发明授权

US5382542A Method of growth of II-VI materials on silicon using As passivation 失效
标题翻译：使用As钝化在硅上生长II-VI材料的方法
公开(公告)号：US5382542A
公开(公告)日：1995-01-17
申请号：US098017
申请日：1993-07-26
申请人： Jennifer J. Zinck , Damodaran Rajavel , John E. Jensen
发明人： Jennifer J. Zinck , Damodaran Rajavel , John E. Jensen
IPC分类号： C30B23/08 , C23C14/12 , C30B25/02 , C30B25/18 , C30B29/48 , H01L21/203 , H01L21/205 , H01L21/36 , H01L21/363 , H01L21/365 , H01L21/20
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/48 , H01L21/02381 , H01L21/02439 , H01L21/02551 , H01L21/0256 , H01L21/02631
摘要： A metalorganic arsenic source comprising R.sub.3-m AsH.sub.m, where R is an organic radical selected from the group consisting of C.sub.n H.sub.2n+1 and C.sub.n H.sub.2n-1, where n ranges from 1 to 6, and where m is 1 or 2, such as tert-butylarsine (t-BuAsH.sub.2), is useful in terminating a silicon surface with arsenic without carbon contamination, thereby permitting subsequent growth of high quality ZnSe. Use of this metalorganic arsenic source allows the full potential of the metalorganic molecular beam epitaxy (MOMBE) deposition technique, which has demonstrated superior flux control than that achieved by MBE, to be realized in the heteroepitaxy of HgCdTe on silicon substrates. Other metalorganic deposition procedures, such as MOVPE, may also be employed in the practice of the invention.
摘要翻译：包含R3-mAsHm的金属有机砷源，其中R是选自CnH2n + 1和CnH2n-1的有机基团，其中n为1-6，m为1或2，如叔丁基胂（t-BuAsH 2）可用于在没有碳污染的情况下用砷终止硅表面，从而允许高品质ZnSe的随后生长。使用这种金属有机砷源可以实现在硅衬底上的HgCdTe的异质外延中实现的金属有机分子束外延（MOMBE）沉积技术的全部潜力，该技术已经表现出比通过MBE实现的更好的通量控制。其它金属有机沉积方法，如MOVPE也可用于本发明的实践。

2. 发明授权

US4000084A Liquid crystal mixtures for electro-optical display devices 失效
标题翻译：用于电光显示器件的液晶混合物
公开(公告)号：US4000084A
公开(公告)日：1976-12-28
申请号：US425454
申请日：1973-12-17
申请人： Paul Y. Hsieh , Yat-Shir Lee , John E. Jensen
发明人： Paul Y. Hsieh , Yat-Shir Lee , John E. Jensen
IPC分类号： C09K19/20 , C09K3/34 , G02F1/13
CPC分类号： C09K19/2007 , C09K2019/2035
摘要： This invention is directed to liquid crystal mixtures which have an extended operating range and require a low operating voltage. They are white in color and stable to atmospheric oxygen, moisture, and light. Because of their superior properties, they are useful in electro-optical displays, especially in liquid crystal watches and pocket-size calculators.

3. 发明授权

US3991416A AC biased and resonated liquid crystal display 失效
标题翻译：交流偏置和谐振液晶显示
公开(公告)号：US3991416A
公开(公告)日：1976-11-09
申请号：US614463
申请日：1975-09-18
申请人： William R. Byles , John E. Jensen , Michael J. Little , Michael N. Ernstoff
发明人： William R. Byles , John E. Jensen , Michael J. Little , Michael N. Ernstoff
IPC分类号： G09G3/18 , G02F1/133 , G06F3/14
CPC分类号： G02F1/13306
摘要： A liquid crystal device biased by an alternating current having a predetermined frequency higher than the dispersion frequency of the liquid crystal material. The liquid crystal device exhibits inherent capacitance across its input terminals which is resonated by an inductor to result in a higher bias current and reduction of image smear of images displayed by such device.
摘要翻译：由具有比液晶材料的色散频率高的预定频率的交流电偏置的液晶装置。液晶装置在其输入端子之间表现出固有的电容，其由电感器共振，导致更高的偏置电流和减少由这种装置显示的图像的图像污点。

4. 发明授权

US4888204A Photochemical deposition of high purity gold films 失效
标题翻译：高纯金膜的光化学沉积
公开(公告)号：US4888204A
公开(公告)日：1989-12-19
申请号：US242670
申请日：1988-09-12
申请人： Lee W. Tutt , John E. Jensen
发明人： Lee W. Tutt , John E. Jensen
IPC分类号： C23C16/18 , C23C16/48 , C30B25/10 , H01L21/285
CPC分类号： C23C16/18 , C30B25/105 , C30B29/02
摘要： High purity gold films are photochemically deposited on substrates from the gold containing compound (CH.sub.3).sub.2 Au[CH(COCF.sub.3).sub.2 ]. A vapor of the gold containing organometallic compound, possibly mixed with a carrier gas, is flowed over the surface of the substrate, which is at 0.degree. C. to 160.degree. C., and preferably at ambient temperature. Photodissociation is induced with ultraviolet light, inasmuch as the organometallic compound is strongly absorbing in the range of from about 300 to 340 nanometers. Substantially no organic fragments are deposited upon the surface, so that the deposited gold film is of high purity.
摘要翻译：将高纯金膜从含金化合物（CH3）2Au [CH（COCF3）2]光化学沉积在基材上。可能与载气混合的含金有机金属化合物的蒸气在基板的表面上流动，其在0℃至160℃，优选在环境温度下。光分解是用紫外线诱导的，因为有机金属化合物在约300至340纳米的范围内是强吸收的。基本上没有有机碎片沉积在表面上，使得沉积的金膜具有高纯度。

5. 发明授权

US4225454A Ortho-cyanophenyl biphenylcarboxylate liquid crystal esters and mixtures thereof 失效
标题翻译：偶联羧基苯基联苯羧酸酯液晶酯及其混合物
公开(公告)号：US4225454A
公开(公告)日：1980-09-30
申请号：US1795
申请日：1979-01-08
申请人： Frederick G. Yamagishi , Leroy J. Miller , John E. Jensen , J. David Margerum
发明人： Frederick G. Yamagishi , Leroy J. Miller , John E. Jensen , J. David Margerum
IPC分类号： C09K19/20 , C07C121/60 , C07C121/75 , C09K3/34
CPC分类号： C09K19/2007
摘要： A number of alkyl and alkoxy-substituted ortho-cyanophenyl biphenylcarboxylate esters have been prepared for use as components for nematic liquid crystal mixtures which can be used in homeotropically aligned, field effect display devices or in dynamic scattering displays.These materials have large negative dielectric anisotropies and high birefringence.
摘要翻译：已经制备了许多烷基和烷氧基取代的邻 - 氰基苯基联苯羧酸酯，用作向列型液晶混合物的组分，可用于垂直排列的场效应显示装置或动态散射显示。这些材料具有大的负介电各向异性和高双折射。

6. 发明授权

US5045397A Optical adhesive system having low refractive index 失效
$Optical adhesive system having low refractive index$
标题翻译：具有低折射率的光学粘合剂体系
公开(公告)号：US5045397A
公开(公告)日：1991-09-03
申请号：US14555
申请日：1987-02-13
申请人： John E. Jensen
发明人： John E. Jensen
IPC分类号： B32B17/10 , C03C27/12 , C09J5/02
CPC分类号： B32B17/10045 , B32B17/1055 , B32B17/10688 , C09J5/02 , C09J2400/146 , Y10T428/31536 , Y10T428/31612
摘要： An optical cement system having an index of refraction of 1.50 or less, which can be used to bond pieces of optical quality glass during the preparation of devices. The surfaces of the glass pieces to be bonded are treated with an organosilane to produce activated sites, to which the adhesive forms a chemical bond. The adhesive is prepared by mixing together a transparent polymerizable monomer having a refractive index of 1.50 or less, a thickener, and an initiator. The adhesive is flowable, and its consistency is determined by the nature of the thickener. A layer of the adhesive is placed between the pieces of organosilane-treated glass, and polymerized by ultraviolet light or other energy, bonding the pieces of glass together with an adhesive having a refractive index less than that of the glass.
摘要翻译：一种折射率为1.50以下的光学水泥系统，其可用于在制备器件期间粘合光学品质玻璃片。用有机硅烷处理要接合的玻璃片的表面以产生活性部位，粘合剂形成化学键。通过将折射率为1.50以下的透明可聚合单体，增稠剂和引发剂混合在一起来制备粘合剂。粘合剂是可流动的，其稠度由增稠剂的性质决定。将一层粘合剂放置在有机硅烷处理的玻璃片之间，并通过紫外线或其他能量聚合，用折射率小于玻璃的粘合剂将玻璃片粘合在一起。

7. 发明授权

US4933207A Laser and thermal assisted chemical vapor deposition of mercury containing compounds 失效
标题翻译：含汞化合物的激光和热辅助化学气相沉积
公开(公告)号：US4933207A
公开(公告)日：1990-06-12
申请号：US376189
申请日：1989-06-30
申请人： John E. Jensen , Lee W. Tutt
发明人： John E. Jensen , Lee W. Tutt
IPC分类号： C23C16/30 , C30B25/10
CPC分类号： C23C16/306 , C30B25/105 , C30B29/48
摘要： A mercury compound such as mercury telluride or mercury cadmium telluride is deposited upon a substrate by chemical vapor deposition, with dissociation of the organic compounds accelerated by laser energy. The mercury-containing compound is preferably divinylmercury, which dissociates under intense light of 248 nanometers wavelength to deposit mercury in combination with the codeposited element. The laser-assisted chemical vapor deposition is accomplished at 100.degree. C. to 195.degree. C., preferably 165.degree. C., without the deposition of carbon contaminants.
摘要翻译：汞化合物如碲化汞或碲化汞镉通过化学气相沉积沉积在基板上，有机化合物被激光能量加速解离。含汞化合物优选为二乙烯基汞，其在248纳米波长的强光下离解，以与共沉积元素组合沉积汞。激光辅助化学气相沉积在100℃至195℃，优选165℃下完成，而不会沉积碳污染物。

8. 发明授权

US4594264A Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes 失效
标题翻译：从砷化镓复合物的薄固体膜形成砷化镓的方法
公开(公告)号：US4594264A
公开(公告)日：1986-06-10
申请号：US673467
申请日：1984-11-20
申请人： John E. Jensen
发明人： John E. Jensen
IPC分类号： C23C16/30 , B05D3/06
CPC分类号： C23C16/301 , Y10S117/904
摘要： A method for depositing GaAs on a substrate is disclosed, involving applying a thin liquid film of a gallium-arsenic complex solution to the substrate and evaporating arsenide complex. The gallium-arsenic complex is selected from the group of complexes having the formula X.sub.3 GaAsR.sub.3 where X is chlorine, bromine, iodine, phenyl, methyl or trifluoromethyl and R is by hydrogen, phenyl, benzyl, methyl or trifluoromethyl.The thin solid film is irradiated with ultraviolet light at a sufficient wavelength and of a sufficient intensity to photochemically convert the gallium-arsenic complex to GaAs.
摘要翻译：公开了一种在衬底上沉积GaAs的方法，包括将镓 - 砷络合物溶液的薄液膜应用于衬底并蒸发砷化物络合物。镓砷络合物选自具有式为X3GaAsR3的络合物，其中X为氯，溴，碘，苯基，甲基或三氟甲基，R为氢，苯基，苄基，甲基或三氟甲基。用足够强度的紫外线照射薄的固体膜，以将镓砷络合物光电化学转化为GaAs。

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