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1. 发明授权

US06692648B2 Method of plasma heating and etching a substrate 失效
标题翻译：等离子体加热和蚀刻基板的方法
公开(公告)号：US06692648B2
公开(公告)日：2004-02-17
申请号：US09747652
申请日：2000-12-22
申请人： Jeng H. Hwang , Xiaoyi Chen
发明人： Jeng H. Hwang , Xiaoyi Chen
IPC分类号： H01L21302
CPC分类号： H01L21/32136 , C23C16/46 , C23F4/00 , H01L21/32139
摘要： We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to the preheating of a substrate which includes a material which is to be pattern etched at a temperature in excess of 150° C. The method comprises exposing the substrate to a preheating plasma generated from a plasma source gas which includes a reactive gas that aids in the production of a sputtered/etched residue during the preheating which is more easily etched during a subsequent pattern etching step than the material which is being pattern etched. In another embodiment of the method, the reactive gas in the preheating plasma source gas is slightly reactive with the material which is to etched during the subsequent pattern etching step.
摘要翻译：我们已经发现了减少在衬底预热期间溅射/蚀刻的材料的影响的方法。该方法的一个实施方案涉及对包括在超过150℃的温度下进行图案蚀刻的材料的衬底的预热。该方法包括将衬底暴露于由等离子体源气体产生的预热等离子体，其包括反应性气体有助于在预热期间产生溅射/蚀刻的残留物，其在随后的图案蚀刻步骤中比被图案蚀刻的材料更容易被蚀刻。在该方法的另一个实施方案中，预热等离子体源气体中的反应性气体与随后的图案蚀刻步骤期间要蚀刻的材料略微反应。

2. 发明授权

US06821907B2 Etching methods for a magnetic memory cell stack 失效
标题翻译：磁记忆体堆叠的蚀刻方法
公开(公告)号：US06821907B2
公开(公告)日：2004-11-23
申请号：US10092456
申请日：2002-03-06
申请人： Jeng H. Hwang , Guangxiang Jin , Xiaoyi Chen
发明人： Jeng H. Hwang , Guangxiang Jin , Xiaoyi Chen
IPC分类号： H01L21461
CPC分类号： B82Y25/00 , B82Y40/00 , H01F41/308 , H01L43/12
摘要： A method and apparatus for etching a magnetic memory cell stack are described. More particularly, HCl is used as a main etchant gas for etching a magnetic memory cell stack. HCl is used in part to reduce corrosion and improve selectivity. Additionally, use of an amorphous carbon or hydrocarbon based polymer resin for a hard mask is described, as well as a post-etch passivation with a water rinse, a water vapor plasma treatment or an ammonia plasma treatment. Moreover, in an embodiment, a diffusion barrier layer dispose most of the magnetic memory cell stack is etched with hydrogen and fluorine containing gas in a separate process chambers.
摘要翻译：描述了用于蚀刻磁存储单元堆栈的方法和装置。更具体地，HCl用作蚀刻磁存储单元堆叠的主蚀刻剂气体。 HCl部分用于减少腐蚀和提高选择性。另外，描述了使用无定形碳或烃基聚合物树脂作为硬掩模，以及用水冲洗，水蒸气等离子体处理或氨等离子体处理的蚀刻后钝化。此外，在一个实施例中，布置大部分磁存储单元堆叠的扩散阻挡层在单独的处理室中被氢气和含氟气体蚀刻。

3. 发明授权

US06709609B2 Plasma heating of a substrate with subsequent high temperature etching 失效
标题翻译：随后进行高温蚀刻的衬底的等离子体加热
公开(公告)号：US06709609B2
公开(公告)日：2004-03-23
申请号：US09747667
申请日：2000-12-22
申请人： Jeng H. Hwang , Xiaoyi Chen
发明人： Jeng H. Hwang , Xiaoyi Chen
IPC分类号： C03C2568
CPC分类号： C23F4/00 , H01L21/32136
摘要： We have discovered a method of reducing the effect of material sputtered/etched during the preheating of a substrate. One embodiment of the method pertains to preheating a substrate which includes a metal-containing layer which is to be pattern etched subsequent to preheating. The method includes exposing the substrate to a preheating plasma which produces a deposit or residue during preheating which is more easily etched than said metal-containing layer during the subsequent plasma etching of said metal-containing layer.
摘要翻译：我们已经发现了减少在衬底预热期间溅射/蚀刻的材料的影响的方法。该方法的一个实施方案涉及预热衬底，其包括在预热之后被图案蚀刻的含金属层。该方法包括将衬底暴露于预热等离子体中，其在预热期间产生沉积物或残留物，其在所述含金属层的随后等离子体蚀刻期间比所述含金属层更容易蚀刻。

4. 发明申请

US20080070130A1 PHASE SHIFTING PHOTOMASK AND A METHOD OF FABRICATING THEREOF 失效
标题翻译：相移相机及其制作方法
公开(公告)号：US20080070130A1
公开(公告)日：2008-03-20
申请号：US11838418
申请日：2007-08-14
申请人： SCOTT ALAN ANDERSON , Xiaoyi Chen , Michael N. Grimbergen , Ajay Kumar
发明人： SCOTT ALAN ANDERSON , Xiaoyi Chen , Michael N. Grimbergen , Ajay Kumar
IPC分类号： G03F9/00
CPC分类号： G03F1/32 , G03F1/54
摘要： A phase shifting photomask comprising a patterned film stack formed on a transparent substrate and a method of fabricating the photomask are disclosed. In one embodiment, the film stack includes a first layer having a pre-determined value of transparency to light of an illumination source of a lithographic system and a second layer that is substantially transparent to the light and facilitates in the light a pre-determined phase shift.
摘要翻译：公开了一种包括形成在透明基板上的图案化膜堆叠的相移光掩模和制造光掩模的方法。在一个实施例中，薄膜叠层包括具有对光刻系统的照明源的透明度的预定值的第一层和对光基本上透明的第二层，并且在光中有助于预定阶段转移。

5. 发明申请

US20090325387A1 METHODS AND APPARATUS FOR IN-SITU CHAMBER DRY CLEAN DURING PHOTOMASK PLASMA ETCHING 审中-公开
标题翻译：光电子等离子体蚀刻中的室内干燥清洁剂的方法和装置
公开(公告)号：US20090325387A1
公开(公告)日：2009-12-31
申请号：US12147341
申请日：2008-06-26
申请人： Xiaoyi Chen , Zhigang Mao , David Knick , Michael Grimbergen , Darin Bivens , Madhavi Chandrahood , Ibrahim Ibrahim , Ajay Kumar
发明人： Xiaoyi Chen , Zhigang Mao , David Knick , Michael Grimbergen , Darin Bivens , Madhavi Chandrahood , Ibrahim Ibrahim , Ajay Kumar
IPC分类号： H01L21/3065 , B44C1/22
CPC分类号： H01J37/32862 , G03F1/80
摘要： Embodiments of the invention include method for in-situ chamber dry clean after photomask plasma etching. In one embodiment, the method includes placing a photomask upon a support pedestal, introducing a process gas into a process chamber, forming a plasma from the process gas, etching a chromium containing layer disposed on the photomask in the presence of the plasma, removing the photomask from the support pedestal, placing a dummy substrate on the pedestal and performing an in-situ dry cleaning process by flowing a cleaning gas containing O2 through the process chamber while the dummy substrate is disposed on the support pedestal.
摘要翻译：本发明的实施例包括在光掩模等离子体蚀刻之后的原位室干洗的方法。在一个实施例中，该方法包括将光掩模放置在支撑基座上，将处理气体引入处理室，从处理气体形成等离子体，在存在等离子体的情况下蚀刻设置在光掩模上的含铬层，将光学掩模从支撑基座上放置，并将虚设的基板放置在基座上，并且通过使含有O 2的清洁气体通过处理室进行原位干洗处理，同时将虚设基板设置在支撑基座上。

6. 发明授权

US07635546B2 Phase shifting photomask and a method of fabricating thereof 失效
标题翻译：相移光掩模及其制造方法
公开(公告)号：US07635546B2
公开(公告)日：2009-12-22
申请号：US11838418
申请日：2007-08-14
申请人： Scott Alan Anderson , Xiaoyi Chen , Michael N. Grimbergen , Ajay Kumar
发明人： Scott Alan Anderson , Xiaoyi Chen , Michael N. Grimbergen , Ajay Kumar
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/54
摘要： A phase shifting photomask comprising a patterned film stack formed on a transparent substrate and a method of fabricating the photomask are disclosed. In one embodiment, the film stack includes a first layer having a pre-determined value of transparency to light of an illumination source of a lithographic system and a second layer that is substantially transparent to the light and facilitates in the light a pre-determined phase shift.
摘要翻译：公开了一种包括形成在透明基板上的图案化膜堆叠的相移光掩模和制造光掩模的方法。在一个实施例中，薄膜叠层包括具有对光刻系统的照明源的透明度的预定值的第一层和对光基本上透明的第二层，并且在光中有助于预定阶段转移。

7. 发明申请

US20060166107A1 Method for plasma etching a chromium layer suitable for photomask fabrication 失效
标题翻译：用于等离子体蚀刻适用于光掩模制造的铬层的方法
公开(公告)号：US20060166107A1
公开(公告)日：2006-07-27
申请号：US11044341
申请日：2005-01-27
申请人： Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
发明人： Xiaoyi Chen , Michael Grimbergen , Madhavi Chandrachood , Jeffrey Tran , Ajay Kumar , Simon Tam , Ramesh Krishnamurthy
IPC分类号： C23F3/00 , C03C25/68 , B44C1/22 , C23F1/00 , C03C15/00 , G03F1/00
CPC分类号： C23F4/00 , G03F1/30 , G03F1/54 , G03F1/80
摘要： A method for etching a chromium layer is provided herein. In one embodiment, a method for etching a chromium layer includes providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer, providing at least one halogen containing process gas to a processing chamber, biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts, and etching the chromium layer through a patterned mask. The method for plasma etching a chromium layer described herein is particularly suitable for fabricating photomasks.
摘要翻译：本文提供了蚀刻铬层的方法。在一个实施例中，用于蚀刻铬层的方法包括在蚀刻室中设置膜层，所述膜层具有部分地通过图案化层暴露的铬层，向处理室提供至少一种含卤素的处理气体，在处理室中的衬底支撑件上具有小于600瓦的多个功率脉冲，并且通过图案化掩模蚀刻铬层。本文所述的用于等离子体蚀刻铬层的方法特别适用于制造光掩模。

8. 发明授权

US06984585B2 Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layer 失效
标题翻译：使用牺牲掩模层从磁阻随机存取存储器（MRAM）膜层去除残留物的方法
公开(公告)号：US06984585B2
公开(公告)日：2006-01-10
申请号：US10218473
申请日：2002-08-12
申请人： Chentsau Ying , Xiaoyi Chen , Padmapani C. Nallan , Ajay Kumar
发明人： Chentsau Ying , Xiaoyi Chen , Padmapani C. Nallan , Ajay Kumar
IPC分类号： H01L21/302
CPC分类号： H01L21/02071 , B82Y25/00 , B82Y40/00 , H01F41/308 , H01L21/31133 , H01L21/32136 , H01L21/32139 , H01L43/12
摘要： A method for removal of residues after plasma etching a film stack comprising a first layer and a sacrificial layer. The method treats a substrate containing the film stack after the first layer of the film stack has been etched to remove residue produced during the etching process. The treatment is performed in a buffered oxide etch wet dip solution that removes the residue and the sacrificial layer.
摘要翻译：一种用于在等离子体蚀刻包括第一层和牺牲层的薄膜堆叠之后去除残余物的方法。在蚀刻第一层薄膜叠层之后，该方法处理含有薄膜叠层的基板，以除去在蚀刻过程中产生的残留物。处理在缓冲氧化物蚀刻湿浸液中进行，其去除残余物和牺牲层。

9. 发明授权

US06942813B2 Method of etching magnetic and ferroelectric materials using a pulsed bias source 失效
标题翻译：使用脉冲偏压源蚀刻磁性和铁电材料的方法
公开(公告)号：US06942813B2
公开(公告)日：2005-09-13
申请号：US10382964
申请日：2003-03-05
申请人： Chentsau Ying , Padmapani C. Nallan , Ajay Kumar , Xiaoyi Chen
发明人： Chentsau Ying , Padmapani C. Nallan , Ajay Kumar , Xiaoyi Chen
IPC分类号： C23F4/00 , H01F41/30 , H01L21/311 , H01L21/3213 , H01L21/8246 , B44C1/22 , H01L21/00
CPC分类号： H01F41/308 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23F4/00 , H01F41/301 , H01J2237/3348 , H01L21/31122 , H01L21/32136 , H01L27/228 , H01L43/12
摘要： A method for etching magnetic and ferroelectric materials using a pulsed substrate biasing technique (PSBT) that applies a plurality of processing cycles to the substrate, where each cycle comprises a period of plasma etching without substrate bias and a period of plasma etching with the substrate bias. In exemplary applications, the method is used for fabricating magneto-resistive random access memory (MRAM) and ferroelectric random access memory (FeRAM) devices.
摘要翻译：一种使用向基板施加多个处理循环的脉冲衬底偏置技术（PSBT）蚀刻磁性和铁电材料的方法，其中每个循环包括没有衬底偏压的等离子体蚀刻周期和具有衬底偏置的等离子体蚀刻周期。在示例性应用中，该方法用于制造磁阻随机存取存储器（MRAM）和铁电随机存取存储器（FeRAM）器件。

10. 发明授权

US06933239B2 Method for removing conductive residue 失效
标题翻译：去除导电残渣的方法
公开(公告)号：US06933239B2
公开(公告)日：2005-08-23
申请号：US10342087
申请日：2003-01-13
申请人： Chentsau Ying , Xiaoyi Chen , Chun Yan , Ajay Kumar
发明人： Chentsau Ying , Xiaoyi Chen , Chun Yan , Ajay Kumar
IPC分类号： H01L21/3213 , H01L21/302
CPC分类号： H01L43/12 , H01L21/32136
摘要： A method for removing conductive residue from a layer on a semiconductor substrate by exposing the substrate to a gas comprising a fluorine containing gas and a hydrogen containing gas. In one embodiment, the gas is excited to form a plasma that removes the conductive residue during fabrication of a magneto-resistive random access memory (MRAM) device.
摘要翻译：一种通过将衬底暴露于包含含氟气体和含氢气体的气体从半导体衬底上的层去除导电残留物的方法。在一个实施例中，气体被激发以形成在制造磁阻随机存取存储器（MRAM）器件期间除去导电残留物的等离子体。

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