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1. 发明授权

US06205013B1 Multi-layer metallization capacitive structure for reduction of the simultaneous switching noise in integrated circuits 失效
标题翻译：用于降低集成电路中同时开关噪声的多层金属化电容结构
公开(公告)号：US06205013B1
公开(公告)日：2001-03-20
申请号：US09055774
申请日：1998-04-06
申请人： Jeng Gong , Jiann-Shiun Torng , Sheng-Hsing Yang
发明人： Jeng Gong , Jiann-Shiun Torng , Sheng-Hsing Yang
IPC分类号： H01G4228
CPC分类号： H01L23/5223 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A multi-layer metallization capacitive structure is provided to a conductive line, such as a power line or signal transmission line in an integrated circuit, where the undesired effect of simultaneous switching noise (SSN) is adverse due to rapid switching of pulses in a digital signal. The multi-layer metallization capacitive structure can help reduce the SSN effect in the integrated circuit by providing at least one metallization layer which extends substantially beneath the conductive line; and at least one dielectric layer sandwiched between the power line and the metallization layer. The multi-layer metallization capacitive structure has an optimal effect if the metallization layer is designed to be precisely equal in width to the power line. The multi-layer metallization capacitive structure has an advantage over the prior art in that it can be formed together with the processing for forming multiple interconnects in the integrated circuit without the need to devise additional processes. Moreover, it requires a reduced layout area to implement as compared to the conventional on-chip capacitor.
摘要翻译：多层金属化电容结构被提供给诸如集成电路中的电力线或信号传输线的导线，其中同时开关噪声（SSN）的不期望的影响由于数字中的脉冲的快速切换而不利信号。多层金属化电容结构可以通过提供至少一个基本上在导线下方延伸的金属化层来帮助降低集成电路中的SSN效应; 以及夹在电源线和金属化层之间的至少一个电介质层。如果金属化层设计成与电力线的宽度精确地相等，则多层金属化电容结构具有最佳效果。多层金属化电容结构具有优于现有技术的优点，因为它可以与集成电路中形成多个互连的处理一起形成，而不需要设计额外的工艺。此外，与传统的片上电容器相比，它需要实现的布局面积减小。

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