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    • 3. 发明授权
    • Spatially controlled atomic layer deposition in porous materials
    • 多孔材料中的空间控制原子层沉积
    • US08318248B2
    • 2012-11-27
    • US12478578
    • 2009-06-04
    • Jeffrey W. ElamJoseph A. LiberaMichael J. PellinPeter C. Stair
    • Jeffrey W. ElamJoseph A. LiberaMichael J. PellinPeter C. Stair
    • C23C16/00
    • B01J37/0226B01J35/065C23C16/042C23C16/045C23C16/403C23C16/405C23C16/407C23C16/45525C23C16/45555
    • Methods for the selective deposition of materials within a porous substrate. The methods use the passivating effects of masking precursors applied to the porous substrate. A portion of a pore surface within the substrate is masked by exposing the substrate to one or more masking precursors. The depth of the pore surface that is masked is controllable by regulating the exposure of the substrate to the masking precursor. Application of the masking precursor prevents adsorption of one or more subsequently applied metal precursors about a portion of the pore surface coated by the masking precursor. Less than an entirety of the unmasked pore surface is coated by the metal precursor, forming a metal stripe on a portion of the pore surface. The depth of the metal stripe is controllable by regulating exposure of the porous substrate to the metal precursor. Subsequent exposure of the substrate to a saturating water application oxidizes the deposited precursors.
    • 在多孔基材内选择性沉积材料的方法。 该方法使用掩蔽前体施加到多孔基材上的钝化作用。 通过将衬底暴露于一个或多个掩模前体来掩蔽衬底内的孔表面的一部分。 被掩蔽的孔表面的深度可通过调节衬底对掩蔽前体的曝光来控制。 掩蔽前体的应用防止一个或多个随后施加的金属前体在被掩蔽前体涂覆的孔表面的一部分附近吸附。 小于整个未掩模的孔表面被金属前体涂覆,在孔表面的一部分上形成金属条纹。 通过调节多孔基材对金属前体的曝光来控制金属条纹的深度。 随后将底物暴露于饱和水中,使沉积的前体氧化。
    • 6. 发明申请
    • MICRO-BALANCE SENSOR INTEGRATED WITH ATOMIC LAYER DEPOSITION CHAMBER
    • 微平衡传感器与原子层沉积室集成
    • US20140053779A1
    • 2014-02-27
    • US13591498
    • 2012-08-22
    • Alex B. F. MartinsonJoseph A. LiberaJeffrey W. ElamShannon C. Riha
    • Alex B. F. MartinsonJoseph A. LiberaJeffrey W. ElamShannon C. Riha
    • C23C16/44C23C16/50
    • C23C16/45525C23C16/52
    • The invention is directed to QCM measurements in monitoring ALD processes. Previously, significant barriers remain in the ALD processes and accurate execution. To turn this exclusively dedicated in situ technique into a routine characterization method, an integral QCM fixture was developed. This new design is easily implemented on a variety of ALD tools, allows rapid sample exchange, prevents backside deposition, and minimizes both the footprint and flow disturbance. Unlike previous QCM designs, the fast thermal equilibration enables tasks such as temperature-dependent studies and ex situ sample exchange, further highlighting the feasibility of this QCM design for day-to-day use. Finally, the in situ mapping of thin film growth rates across the ALD reactor was demonstrated in a popular commercial tool operating in both continuous and quasi-static ALD modes.
    • 本发明涉及在监测ALD过程中的QCM测量。 此前,ALD流程仍然存在重大障碍,准确执行。 将这种专门的原位技术转化为常规表征方法,开发了一个完整的QCM夹具。 这种新设计可以在各种ALD工具上轻松实现,允许快速进行样品交换,防止背面沉积,并最大限度地减少占地面积和流量扰动。 与以前的QCM设计不同,快速热平衡使得诸如温度依赖性研究和非原位样品交换等任务进一步凸显了该QCM设计的日常使用的可行性。 最后,在连续和准静态ALD模式下工作的流行商业工具中,证明了ALD反应器中薄膜生长速率的原位测绘。