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1. 发明授权

US08592941B2 Fuse structure having crack stop void, method for forming and programming same, and design structure 有权
标题翻译：具有裂纹阻挡的保险丝结构，其形成和编程方法以及设计结构
公开(公告)号：US08592941B2
公开(公告)日：2013-11-26
申请号：US12838850
申请日：2010-07-19
申请人： Jeffrey P. Gambino , Tom C. Lee , Kevin G. Petrunich , David C. Thomas
发明人： Jeffrey P. Gambino , Tom C. Lee , Kevin G. Petrunich , David C. Thomas
IPC分类号： H01L21/82 , H01L21/326 , H01L21/44 , H01L23/52
CPC分类号： H01L27/11206 , H01L23/5258 , H01L27/112 , H01L2924/0002 , H01L2924/00
摘要： The disclosure relates generally to fuse structures, methods of forming and programming the same, and more particularly to fuse structures having crack stop voids. The fuse structure includes a semiconductor substrate having a dielectric layer thereon and a crack stop void. The dielectric layer includes at least one fuse therein and the crack stop void is adjacent to two opposite sides of the fuse, and extends lower than a bottom surface and above a top surface of the fuse. The disclosure also relates to a design structure of the aforementioned.
摘要翻译：本公开一般涉及熔丝结构，其形成和编程的方法，更具体地涉及具有裂纹停止空隙的熔断结构。熔丝结构包括其上具有介电层的半导体衬底和裂纹阻挡空隙。电介质层包括至少一个熔断器，裂纹阻挡空隙与保险丝的两个相对的两侧相邻，并且比底表面和保险丝顶表面之上延伸。本公开还涉及上述的设计结构。

2. 发明申请

US20120012976A1 FUSE STRUCTURE HAVING CRACK STOP VOID, METHOD FOR FORMING AND PROGRAMMING SAME, AND DESIGN STRUCTURE 有权
标题翻译：具有断裂停止的保险丝结构，其形成和编程方法以及设计结构
公开(公告)号：US20120012976A1
公开(公告)日：2012-01-19
申请号：US12838850
申请日：2010-07-19
申请人： Jeffrey P. Gambino , Tom C. Lee , Kevin G. Petrunich , David C. Thomas
发明人： Jeffrey P. Gambino , Tom C. Lee , Kevin G. Petrunich , David C. Thomas
IPC分类号： H01L29/86 , G06F9/45 , H01L21/326 , H01L21/02
CPC分类号： H01L27/11206 , H01L23/5258 , H01L27/112 , H01L2924/0002 , H01L2924/00
摘要： The disclosure relates generally to fuse structures, methods of forming and programming the same, and more particularly to fuse structures having crack stop voids. The fuse structure includes a semiconductor substrate having a dielectric layer thereon and a crack stop void. The dielectric layer includes at least one fuse therein and the crack stop void is adjacent to two opposite sides of the fuse, and extends lower than a bottom surface and above a top surface of the fuse. The disclosure also relates to a design structure of the aforementioned.
摘要翻译：本公开一般涉及熔丝结构，其形成和编程的方法，更具体地涉及具有裂纹停止空隙的熔断结构。熔丝结构包括其上具有介电层的半导体衬底和裂纹阻挡空隙。电介质层包括至少一个熔断器，裂纹阻挡空隙与保险丝的两个相对的两侧相邻，并且比底表面和保险丝顶表面之上延伸。本公开还涉及上述的设计结构。

3. 发明授权

US06854041B2 DRAM-based separate I/O memory solution for communication applications 有权
标题翻译：基于DRAM的单独I / O存储器解决方案，用于通信应用
公开(公告)号：US06854041B2
公开(公告)日：2005-02-08
申请号：US10065839
申请日：2002-11-25
申请人： James J. Covino , Kevin G. Petrunich , Harold Pilo
发明人： James J. Covino , Kevin G. Petrunich , Harold Pilo
IPC分类号： G11C7/10 , G11C7/22 , G11C11/406 , G11C11/409 , G06F13/14
CPC分类号： G11C11/40618 , G11C7/1042 , G11C7/22 , G11C11/406 , G11C11/409
摘要： A structure and method for performing back-to-back read and write memory operations to a same DRAM bank comprising articulating between reading data on a first bank during successive first bank read cycles and writing data to a second bank during successive second bank write cycles, cycling between reading data on the second bank during successive second bank read cycles and writing data to the first bank during successive first bank write cycles, and performing a refresh cycle on the first and second bank, wherein the first bank write cycles lag the first bank read cycles, and wherein the second bank write cycles lag the second bank read cycles. Moreover, the read and write memory operations constantly swap between the read and write cycles and between the first and second bank.
摘要翻译：一种用于对同一DRAM组执行背靠背读和写存储器操作的结构和方法，包括在连续的第一存储体读周期期间在第一存储体上读取数据和在连续的第二存储体写周期期间将数据写入第二存储体的关系，在连续的第二组读取周期期间在第二组上的读取数据之间循环，并且在连续的第一组写周期期间将数据写入第一组，并且在第一和第二组上执行刷新周期，其中第一组写入周期落后于第一组读周期，并且其中第二存储体写周期滞后于第二存储体读周期。此外，读和写存储器操作在读和写周期之间以及第一和第二存储体之间不断地交换。

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