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    • 4. 发明申请
    • Systems and Methods for Tracking Block Ownership
    • 跟踪块所有权的系统和方法
    • US20130262758A1
    • 2013-10-03
    • US13436167
    • 2012-03-30
    • Sean SmithAnureita Rao
    • Sean SmithAnureita Rao
    • G06F12/00
    • G06F3/0605G06F3/064G06F3/0643G06F3/067
    • Systems and methods for, among other things, providing a storage system which allows for efficient tracking of in-use storage disk blocks using “sharing nodes”. Disk blocks are a result of low-level formatting, which breaks up the total storage capacity into a set number of blocks. High-level formatting of the disk creates the file system, and part of the file system may create metadata known as inodes, and associate an inode with each file, such that an inode tracks the disk blocks in use by that file, pointing from the file to a set of blocks. An S-node generator creates another type of metadata, complementary to an inode, known as an S-node data structure, such that an S-node data structure is associated with a block, and tracks the set of inodes using the block, pointing from the disk blocks to inodes.
    • 提供存储系统的系统和方法,其允许使用“共享节点”有效地跟踪使用中的存储磁盘块。 磁盘块是低级格式化的结果,它将总存储容量分解成一定数量的块。 磁盘的高级格式化创建文件系统,并且文件系统的一部分可以创建称为inode的元数据,并将一个inode与每个文件相关联,使得inode跟踪由该文件使用的磁盘块,指向 文件到一组块。 S节点生成器创建与称为S节点数据结构的inode互补的另一类型的元数据,使得S节点数据结构与块相关联,并且使用该块跟踪所述一组inode,指向 从磁盘块到索引节点。
    • 5. 发明授权
    • Measuring circuit and a method for determining a characteristic of the impedance of a complex impedance element for facilitating characterization of the impedance thereof
    • 测量电路和用于确定复阻抗元件的阻抗的特性以便于表征其阻抗的方法
    • US07555394B2
    • 2009-06-30
    • US11492606
    • 2006-07-24
    • James F. CaffreyColm F. SlatteryAlbert C. O'GradyColin Gerard LydenDonal P. GeraghtySean Smith
    • James F. CaffreyColm F. SlatteryAlbert C. O'GradyColin Gerard LydenDonal P. GeraghtySean Smith
    • G01R25/00G01R27/28
    • G01R27/02
    • A single chip integrated circuit measuring circuit (1) for determining a characteristic of the impedance of an external complex impedance circuit (2) for facilitating characterization of the impedance of the complex impedance circuit (2) comprises a signal generating circuit (7) for generating a variable frequency stimulus signal for applying to the complex impedance circuit (2). A first receiving circuit (10) receives a response signal from the complex impedance circuit (2) in response to the stimulus signal and conditions the response signal. A first analog-to-digital converter (68) converts the conditioned response signal to a first digital output signal, which is read from the first analog-to-digital converter (68) through a first digital output port (14). The response signal from the complex impedance circuit (2) is a current signal, and a current to voltage converter circuit (64) converts the response signal to a voltage signal. A first RMS to DC level converting circuit (70) converts the AC voltage of the response signal to a DC voltage level, and a fourth multiplexer (67) selectively applies the voltage response signal or the DC voltage level signal to the first analog-to-digital converter (68), depending on whether it is desired that the first digital output signal should be indicative of the phase shift or amplitude change in the response signal relative to the stimulus signal. A second receiving circuit (20) receives the stimulus signal, and similarly converts the stimulus signal to a second digital output signal for facilitating comparison of the response signal with the stimulus signal.
    • 一种单芯片集成电路测量电路(1),用于确定外部复阻抗电路(2)的阻抗特性,以便于表征复阻抗电路(2)的阻抗,其特征在于包括一个信号发生电路(7) 用于施加到复阻抗电路(2)的可变频率刺激信号。 第一接收电路(10)响应于激励信号接收来自复阻抗电路(2)的响应信号并且对响应信号进行调节。 第一模数转换器(68)将经调节的响应信号转换成通过第一数字输出端口(14)从第一模数转换器(68)读取的第一数字输出信号。 来自复阻抗电路(2)的响应信号是电流信号,并且电流 - 电压转换器电路(64)将响应信号转换为电压信号。 第一RMS至DC电平转换电路(70)将响应信号的AC电压转换为DC电压电平,第四多路复用器(67)选择性地将电压响应信号或DC电压电平信号施加到第一模数转换器 数字转换器(68),这取决于第一数字输出信号是否应当指示响应信号相对于激励信号的相移或幅度变化。 第二接收电路(20)接收刺激信号,并且类似地将激励信号转换为第二数字输出信号,以便于响应信号与刺激信号的比较。
    • 8. 发明申请
    • Cross-contaminant shield in sputtering system
    • 溅射系统中的交叉污染屏蔽
    • US20060231392A1
    • 2006-10-19
    • US11107283
    • 2005-04-14
    • Ravi MullapudiSean Smith
    • Ravi MullapudiSean Smith
    • C23C14/00
    • C23C14/352C23C14/505H01J37/3447
    • A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process. Various shields are described to prevent cross-contamination from the targets and prevent the sputtered target material from entering gaps in the chamber and shorting out insulators.
    • 描述了用于在真空室中一次在多个工件(晶片,显示面板或任何其他工件)上沉积材料的多室处理系统。 该系统包括溅射室和单独的预清洁室,其中晶片可以通过机器臂在两个室之间传递而不破坏真空。 将晶片一个接一个地安装在预清洁室和溅射室中的旋转托盘上。 托盘牢固地固定在溅射室中的可旋转工作台上。 表中的铜管将RF能量耦合到晶片,并且穿过铜管的液体控制晶片的温度。 相同或不同材料的多个目标可以在托盘旋转的同时将材料沉积在晶片上。 在溅射室中的磁控管组件中的多个磁体(一个用于每个靶)在其各自的靶上摆动,以均匀的目标腐蚀和在晶片上的均匀沉积。 在每个磁体和靶之间的电绝缘的目标背板具有通过其的液体通道用于控制温度。 通过浸焊法将固定在目标背板底部的薄铝板,将磁体和靶材之间的距离做得非常小。 描述了各种屏蔽,以防止目标的交叉污染,并防止溅射的目标材料进入腔室中的间隙并使绝缘体短路。