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1. 发明申请

US20070251155A1 Polishing composition containing polyether amine 有权
标题翻译：含聚醚胺的抛光组合物
公开(公告)号：US20070251155A1
公开(公告)日：2007-11-01
申请号：US11412369
申请日：2006-04-27
申请人： Jeffrey Dysard , Paul Feeney , Sriram Anjur , Timothy Johns , Yun-Biao Xin , Li Wang
发明人： Jeffrey Dysard , Paul Feeney , Sriram Anjur , Timothy Johns , Yun-Biao Xin , Li Wang
IPC分类号： B24B7/30 , B24D11/00
CPC分类号： C09K3/1463 , B24B37/044 , C09G1/02 , H01L21/3212
摘要： The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.
摘要翻译：本发明的化学机械抛光系统包括抛光组分，液体载体和聚醚胺。本发明的方法包括用前述抛光系统对衬底进行化学机械抛光。

2. 发明申请

US20090156006A1 COMPOSITIONS AND METHODS FOR CMP OF SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：用于半导体材料的CMP的组合物和方法
公开(公告)号：US20090156006A1
公开(公告)日：2009-06-18
申请号：US12226394
申请日：2007-04-30
申请人： Sriram Anjur , Jeffrey Dysard , Paul Feeney , Timothy Johns , Richard Jenkins
发明人： Sriram Anjur , Jeffrey Dysard , Paul Feeney , Timothy Johns , Richard Jenkins
IPC分类号： H01L21/304 , C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing semi-conductor materials. The composition comprises an abrasive, an organic amino compound, an acidic metal complexing agent and an aqueous carrier A CMP method for polishing a surface of a semiconductor material utilizing the composition is also disclosed.
摘要翻译：本发明提供适用于抛光半导体材料的化学机械抛光（CMP）组合物。该组合物还包括研磨剂，有机氨基化合物，酸性金属络合剂和含水载体。A CMP方法，用于利用该组合物抛光半导体材料的表面。

3. 发明申请

US20080113589A1 Composition and method for damascene CMP 有权
标题翻译：大马士革CMP的组成和方法
公开(公告)号：US20080113589A1
公开(公告)日：2008-05-15
申请号：US11599199
申请日：2006-11-13
申请人： Paul Feeney , Sriram Anjur , Jeffrey Dysard
发明人： Paul Feeney , Sriram Anjur , Jeffrey Dysard
IPC分类号： B24B29/02 , B24B7/00 , C09K3/14
CPC分类号： C09K3/1463 , B24B37/044 , C09K3/1409
摘要： The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition comprises particles of an abrasive wherein the particles have a mean particle diameter DM wherein the mean particle diameter of the particles satisfies the equation: DM>W. The invention further provides a method of preparing the chemical-mechanical polishing composition.
摘要翻译：本发明提供了一种化学机械抛光具有其上限定的至少一个特征的基材的方法，其中所述特征具有尺寸为W的至少一个尺寸，具有化学机械抛光组合物。抛光组合物包含研磨剂颗粒，其中颗粒具有平均粒径D M M，其中颗粒的平均粒径满足以下等式：D M M / W。本发明还提供了一种制备化学 - 机械抛光组合物的方法。

4. 发明授权

US07897061B2 Compositions and methods for CMP of phase change alloys 有权
标题翻译：相变合金CMP的组成和方法
公开(公告)号：US07897061B2
公开(公告)日：2011-03-01
申请号：US11699129
申请日：2007-01-29
申请人： Jeffrey Dysard , Paul Feeney , Sriram Anjur
发明人： Jeffrey Dysard , Paul Feeney , Sriram Anjur
IPC分类号： C09K13/00
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L45/06 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.
摘要翻译：本发明提供适用于抛光包含相变合金（PCA）如锗 - 锑 - 碲（GST）合金的基材的化学机械抛光（CMP）组合物。组合物包含不超过约6重量％的颗粒磨料与任选的氧化剂，至少一种螯合剂及其水性载体的组合。螯合剂包括能够螯合存在于底物中的相变合金或其组分（例如，锗，铟，锑和/或碲物质）的化合物或化合物的组合，或螯合由该底物形成的物质 PCA在用CMP组合物抛光衬底的过程中。还公开了利用该组合物研磨含相变合金的基材的CMP方法。

5. 发明申请

US20070178700A1 Compositions and methods for CMP of phase change alloys 有权
标题翻译：相变合金CMP的组成和方法
公开(公告)号：US20070178700A1
公开(公告)日：2007-08-02
申请号：US11699129
申请日：2007-01-29
申请人： Jeffrey Dysard , Paul Feeney , Sriram Anjur
发明人： Jeffrey Dysard , Paul Feeney , Sriram Anjur
IPC分类号： C09K13/00 , C03C15/00 , H01L21/302
CPC分类号： C23F3/06 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L45/06 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.
摘要翻译：本发明提供适用于抛光包含相变合金（PCA）如锗 - 锑 - 碲（GST）合金的基材的化学机械抛光（CMP）组合物。组合物包含不超过约6重量％的颗粒磨料与任选的氧化剂，至少一种螯合剂及其水性载体的组合。螯合剂包括能够螯合存在于底物中的相变合金或其组分（例如，锗，铟，锑和/或碲物质）的化合物或化合物的组合，或螯合由该底物形成的物质 PCA在用CMP组合物抛光衬底的过程中。还公开了利用该组合物研磨含相变合金的基材的CMP方法。

6. 发明授权

US08759216B2 Compositions and methods for polishing silicon nitride materials 有权
标题翻译：用于研磨氮化硅材料的组合物和方法
公开(公告)号：US08759216B2
公开(公告)日：2014-06-24
申请号：US11448205
申请日：2006-06-07
申请人： Jeffrey Dysard , Sriram Anjur , Timothy Johns , Zhan Chen
发明人： Jeffrey Dysard , Sriram Anjur , Timothy Johns , Zhan Chen
IPC分类号： H01L21/302 , H01L21/336 , C03C15/00 , C03C25/68
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.
摘要翻译：本发明提供一种研磨含氮化硅的基板的方法。该方法包括用抛光组合物研磨氮化硅衬底的表面，抛光组合物包括胶体二氧化硅，至少一种酸性组分和水性载体。所述至少一种酸性组分的pKa在约1至4.5的范围内。所述组合物的pH值比所述至少一种酸性组分的pKa小约0.5pH单位至大于pKa约1.5pH单位。

7. 发明申请

US20070298612A1 Compositions and methods for polishing silicon nitride materials 有权
标题翻译：用于研磨氮化硅材料的组合物和方法
公开(公告)号：US20070298612A1
公开(公告)日：2007-12-27
申请号：US11448205
申请日：2006-06-07
申请人： Jeffrey Dysard , Sriram Anjur , Timothy Johns , Zhan Chen
发明人： Jeffrey Dysard , Sriram Anjur , Timothy Johns , Zhan Chen
IPC分类号： C03C15/00 , H01L21/302
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/31053
摘要： The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.
摘要翻译：本发明提供一种研磨含氮化硅的基板的方法。该方法包括用抛光组合物研磨氮化硅衬底的表面，抛光组合物包括胶体二氧化硅，至少一种酸性组分和水性载体。所述至少一种酸性组分的pKa在约1至4.5的范围内。所述组合物的pH值比所述至少一种酸性组分的pKa小约0.5pH单位至大于pKa约1.5pH单位。

8. 发明申请

US20090081871A1 POLISHING COMPOSITION AND METHOD UTILIZING ABRASIVE PARTICLES TREATED WITH AN AMINOSILANE 有权
标题翻译：抛光组合物和利用氨基硅烷处理的磨料颗粒的方法
公开(公告)号：US20090081871A1
公开(公告)日：2009-03-26
申请号：US12234173
申请日：2008-09-19
申请人： Jeffrey Dysard , Sriram Anjur , Steven Grumbine , Daniela White , William Ward
发明人： Jeffrey Dysard , Sriram Anjur , Steven Grumbine , Daniela White , William Ward
IPC分类号： H01L21/304 , C09K3/14
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1436 , H01L21/31053
摘要： The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound.
摘要翻译：本发明的方法包括用本发明的抛光组合物对基材进行化学机械抛光，所述抛光组合物包括已经用氨基硅烷化合物处理的液体载体，阳离子聚合物，酸和磨料颗粒。

9. 发明授权

US07994057B2 Polishing composition and method utilizing abrasive particles treated with an aminosilane 有权
标题翻译：使用用氨基硅烷处理的磨料颗粒的抛光组合物和方法
公开(公告)号：US07994057B2
公开(公告)日：2011-08-09
申请号：US12234173
申请日：2008-09-19
申请人： Jeffrey Dysard , Sriram Anjur , Steven Grumbine , Daniela White , William Ward
发明人： Jeffrey Dysard , Sriram Anjur , Steven Grumbine , Daniela White , William Ward
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C09K3/1463 , C09G1/02 , C09K3/1436 , H01L21/31053
摘要： The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier, a cationic polymer, an acid, and abrasive particles that have been treated with an aminosilane compound.
摘要翻译：本发明的方法包括用本发明的抛光组合物对基材进行化学机械抛光，所述抛光组合物包括已经用氨基硅烷化合物处理的液体载体，阳离子聚合物，酸和磨料颗粒。

10. 发明申请

US20050274627A1 Electrochemical-mechanical polishing system 失效
标题翻译：电化学机械抛光系统
公开(公告)号：US20050274627A1
公开(公告)日：2005-12-15
申请号：US10865027
申请日：2004-06-10
申请人： Ian Wylie , Sriram Anjur
发明人： Ian Wylie , Sriram Anjur
IPC分类号： B24D13/14 , B23H3/00
CPC分类号： B24B37/26 , Y10T428/24273 , Y10T428/24355 , Y10T428/24628 , Y10T428/24917
摘要： Provided is a polishing apparatus and polishing pad, intended for polishing a substrate, and designed for improved flow and distribution of a polishing composition to the area of interaction between the pad and substrate. In one aspect, a polishing pad is provided having first and second pluralities of unidirectional pores configured to communicate polishing composition between the top and bottom surfaces of the pad. A cyclic flow of composition is established to continuously renew composition to the area of interaction between the pad and the substrate. In another aspect, a polishing apparatus is provided having a polishing composition transfer region between a polishing pad and a platen. Pores disposed through the pad communicate composition from the transfer region to the top surface. To facilitate directing the composition into the pores, the apparatus includes a plurality of protrusions protruding into the transfer region that are aligned with the pores.
摘要翻译：提供了用于抛光基底的抛光装置和抛光垫，并且被设计用于改善抛光组合物与垫和基底之间的相互作用区域的流动和分布。在一个方面，提供了具有第一和第二多个单向孔的抛光垫，其被构造成在衬垫的顶表面和底表面之间连通抛光组合物。建立循环流动的组合物以将组合物连续地更新到衬垫和衬底之间的相互作用区域。另一方面，提供一种抛光装置，其具有在抛光垫和压板之间的抛光组合物转印区域。通过衬垫布置的孔将组合物从转印区域传递到顶表面。为了便于将组合物引导到孔中，该装置包括突出到与孔对准的转移区域中的多个突起。

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