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1. 发明授权

US06421811B1 Defect detection via acoustic analysis 失效
标题翻译：通过声学分析进行缺陷检测
公开(公告)号：US06421811B1
公开(公告)日：2002-07-16
申请号：US09409498
申请日：1999-09-30
申请人： Rama R. Goruganthu , Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring
发明人： Rama R. Goruganthu , Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring
IPC分类号： G06F1750
CPC分类号： G01R31/2898 , G01N29/2418 , G01N2291/012 , G01N2291/2698 , G01R31/2851 , G01R31/311
摘要： According to an example embodiment of the present invention, a defect detection approach involves detecting the existence of defects in an integrated circuit as a function of acoustic energy. Acoustic energy propagating through the device is detected. A parameter including information such as amplitude, frequency, phase, or a spectrum is developed from the detected energy and correlated to a particular defect in the device.
摘要翻译：根据本发明的示例性实施例，缺陷检测方法包括检测作为声能的函数的集成电路中的缺陷的存在。检测通过装置传播的声能。从检测到的能量开发包括振幅，频率，相位或频谱等信息的参数，并将其与设备中的特定缺陷相关联。

2. 发明授权

US06350624B1 Substrate removal as a functional of sonic analysis 失效
标题翻译：基底去除作为声波分析的函数
公开(公告)号：US06350624B1
公开(公告)日：2002-02-26
申请号：US09409304
申请日：1999-09-29
申请人： Rama R. Goruganthu , Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring
发明人： Rama R. Goruganthu , Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring
IPC分类号： H01L21302
CPC分类号： G01N1/32 , G01R31/311
摘要： Substrate removal for post-manufacturing analysis of a semiconductor device is enhanced via a method and system that use sonic energy in the control of the removal process. According to an example embodiment of the present invention, sonic energy is reflected off of a region of a semiconductor chip having a portion of substrate removed from the back side of the chip. The reflections are detected and used to determine the thickness of substrate in the back side. In this manner, the substrate removal process can be efficiently and accurately controlled.
摘要翻译：通过在控制去除过程中使用声能的方法和系统来增强用于半导体器件后制造分析的衬底去除。根据本发明的示例性实施例，声能被从芯片的背面去除的衬底的一部分的半导体芯片的区域反射出来。检测反射并用于确定背面底物的厚度。以这种方式，可以有效且准确地控制基板去除处理。

3. 发明授权

US06303396B1 Substrate removal as a function of resistance at the back side of a semiconductor device 有权
标题翻译：作为半导体器件背面的电阻的函数的衬底去除
公开(公告)号：US06303396B1
公开(公告)日：2001-10-16
申请号：US09408881
申请日：1999-09-29
申请人： Rosalinda M. Ring , Rama R. Goruganthu , Brennan V. Davis , Jeffrey D. Birdsley , Michael R. Bruce
发明人： Rosalinda M. Ring , Rama R. Goruganthu , Brennan V. Davis , Jeffrey D. Birdsley , Michael R. Bruce
IPC分类号： H01L2166
CPC分类号： G01R31/2898 , H01L22/10 , H01L22/14 , H01L2924/014
摘要： A resistance monitoring approach is used for removing substrate from a back side of a semiconductor device. According to an example embodiment of the present invention, substrate is removed from a semiconductor device having a circuit side opposite the back side and a resistance path in silicon substrate. The change in resistance of the resistance path is monitored. The change in resistance provides an indication of the progress of the substrate removal process. Using the change in resistance, the substrate removal process is controlled.
摘要翻译：电阻监测方法用于从半导体器件的背面去除衬底。根据本发明的示例性实施例，从具有与背面相反的电路侧和硅衬底中的电阻路径的半导体器件中去除衬底。监测电阻路径的电阻变化。电阻的变化提供了衬底移除过程进展的指示。使用电阻的变化，控制衬底去除过程。

4. 发明授权

US06448096B1 Atomic force microscopy and signal acquisition via buried insulator 失效
标题翻译：原子力显微镜和通过埋层绝缘子的信号采集
公开(公告)号：US06448096B1
公开(公告)日：2002-09-10
申请号：US09864656
申请日：2001-05-23
申请人： Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring , Daniel L. Stone
发明人： Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring , Daniel L. Stone
IPC分类号： H01L2100
CPC分类号： G01Q60/30 , G01R31/303 , Y10S977/854
摘要： Analysis of a semiconductor die having silicon-on-insulator (SOI) structure is enhanced by accessing the circuitry within the die from the back side without necessarily breaching the insulator layer of the SOI structure. According to an example embodiment of the present invention, a semiconductor die having a SOI structure and a backside opposite circuitry in a circuit side is analyzed. An atomic force microscope is scanned across a thinned portion of the back side. The microscope responds to an electrical characteristic, such as a logic state, coupled from circuitry via the insulator portion of the die over which the microscope is being scanned. The response of the microscope to the die is detected and used to detect an electrical characteristic of the die.
摘要翻译：通过从背面访问管芯内的电路而不必破坏SOI结构的绝缘体层来增强具有绝缘体上硅（SOI）结构的半导体管芯的分析。根据本发明的示例性实施例，分析了具有SOI结构的半导体管芯和电路侧的背面相反的电路。原子力显微镜扫描在背面的薄部分。显微镜响应诸如逻辑状态的电特性，该电特性通过显微镜正被扫描的裸片的绝缘体部分从电路耦合。检测显微镜对管芯的响应，并用于检测管芯的电气特性。

5. 发明授权

US06448095B1 Circuit access and analysis for a SOI flip-chip die 失效
标题翻译： SOI倒装芯片的电路访问和分析
公开(公告)号：US06448095B1
公开(公告)日：2002-09-10
申请号：US09755013
申请日：2001-01-05
申请人： Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring , Daniel L. Stone
发明人： Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring , Daniel L. Stone
IPC分类号： H01L2100
CPC分类号： H01L22/20 , G01R31/307
摘要： Analysis of a flip-chip type IC die having SOI structure is enhanced via analysis and repair of the die that make possible analysis that would typically result in the die being in a state of disrepair. According to an example embodiment of the present invention, a focused ion beam (FIB) is directed at a back side of a flip-chip die having a circuitry in a circuit side opposite a back side, wherein the circuitry including silicon on insulator (SOI) structure. The FIB is used to remove a selected portion of substrate including a portion of the insulator of the SOI structure from the die. The removed substrate exposes an insulator region in the die, and a signal is coupled from circuitry in the die via the exposed insulator region and used to analyze the die. Material is deposited in the exposed region and the selected portion of the die that had been removed is reconstructed. The reconstruction takes place before, during or after the signal is coupled, depending upon the die being analyzed and the type of analysis being performed. In this manner, access for analyzing the die is improved via the ability to couple a signal through the insulator and to repair a portion of the die that has been altered for analysis. Analysis that would otherwise be destructive can be performed and the ability of the die to function after analysis can be maintained.
摘要翻译：具有SOI结构的倒装芯片型IC芯片的分析通过分析和修复模具得到增强，这使得可能的分析通常导致模具处于失修状态。根据本发明的一个示例性实施例，聚焦离子束（FIB）指向倒装芯片的背面，该倒装芯片的背面具有电路侧的电路，其中包括绝缘体上的硅（SOI））结构体。 FIB用于从芯片去除包括SOI结构的绝缘体的一部分的衬底的选定部分。去除的衬底暴露了管芯中的绝缘体区域，并且信号通过暴露的绝缘体区域从管芯中的电路耦合并用于分析管芯。材料沉积在暴露的区域中，并且已经去除的模具的选定部分被重建。重建在信号耦合之前，期间或之后进行，这取决于正在分析的管芯和正在执行的分析的类型。以这种方式，通过能够通过绝缘体耦合信号并修复已经被改变以用于分析的芯片的一部分的能力来提高用于分析芯片的访问。否则可以进行破坏性的分析，可以保持分析后的模具功能的能力。

6. 发明授权

US06300145B1 Ion implantation and laser anneal to create n-doped structures in silicon 失效
标题翻译：离子注入和激光退火以在硅中产生n掺杂结构
公开(公告)号：US06300145B1
公开(公告)日：2001-10-09
申请号：US09408051
申请日：1999-09-29
申请人： Jeffrey D. Birdsley , Rama R. Goruganthu , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring
发明人： Jeffrey D. Birdsley , Rama R. Goruganthu , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring
IPC分类号： H01L2166
CPC分类号： G01R31/2886 , G01R31/2831 , G01R31/2884
摘要： The present invention is directed to a method for post-manufacturing analysis of a semiconductor device including a die in a semiconductor device package. According to an example embodiment of the present invention, the package is removed and the die is exposed. Conductive ions are impregnated in a region of the die and a diode is formed. Using the formed diode, target circuitry within the die is analyzed. In this manner, a diode can be formed and used for purposes such as testing or repairing a die.
摘要翻译：本发明涉及用于半导体器件封装中的包括管芯的半导体器件的后制造分析方法。根据本发明的一个示例性实施例，去除包装并且使裸片暴露。导电离子浸渍在管芯的区域中，形成二极管。使用形成的二极管，分析管芯内的目标电路。以这种方式，可以形成二极管并用于诸如测试或修复模具的目的。

7. 发明授权

US06281029B1 Probe points for heat dissipation during testing of flip chip IC 失效
标题翻译：倒装芯片IC测试时的散热探头
公开(公告)号：US06281029B1
公开(公告)日：2001-08-28
申请号：US09409977
申请日：1999-09-30
申请人： Rama R. Goruganthu , Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring
发明人： Rama R. Goruganthu , Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring
IPC分类号： H01L2166
CPC分类号： H01L23/4985 , G01R1/44 , G01R31/2886 , H01L23/3677 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00014 , H01L2924/01077 , H01L2924/10158 , H01L2924/15174 , H01L2924/15311 , H01L2924/00 , H01L2224/05599
摘要： According to one aspect of the disclosure, the present invention provides methods and arrangements for testing a flip chip semiconductor device after the back side of the chip has been thinned to expose a selected region in the substrate. For some chips, thinning removes substrate material useful for drawing heat away from the internal circuitry when the circuitry is running at high speeds. To compensate for this material loss, as plurality of thermally conductive elements is formed in the backside of the semiconductor to draw heat from the backside of the device when the semiconductor device is activated.
摘要翻译：根据本公开的一个方面，本发明提供了在芯片的背面已经变薄以暴露衬底中的选定区域之后测试倒装芯片半导体器件的方法和布置。对于某些芯片，当电路以高速运行时，薄化可去除用于从内部电路吸走热量的衬底材料。为了补偿这种材料损失，由于当半导体器件被激活时，多个导热元件形成在半导体的背面，以从器件的背面抽出热量。

8. 发明授权

US06277656B1 Substrate removal as a function of acoustic analysis 失效
标题翻译：底物去除作为声学分析的一个功能
公开(公告)号：US06277656B1
公开(公告)日：2001-08-21
申请号：US09410145
申请日：1999-09-30
申请人： Rama R. Goruganthu , Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring
发明人： Rama R. Goruganthu , Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring
IPC分类号： H01L2100
CPC分类号： H01L22/26 , B23K26/03 , H01L21/67092 , H01L21/76898
摘要： A substrate removal approach involves sensing acoustic energy in an integrated circuit as a function of substrate in the integrated circuit being removed. According to an example embodiment of the present invention, a method for substrate removal includes removing a portion of substrate from the back side of a semiconductor chip circuitry near a circuit side and opposite the back side. The substrate is removed as a function of detected acoustic energy propagating through the device. The detected acoustic energy can be correlated to a parameter and used for controlling the substrate removal process, improving the ability to efficiently and accurately test semiconductor devices.
摘要翻译：衬底去除方法包括在集成电路中检测作为去除的集成电路中的衬底的函数的集成电路中的声能。根据本发明的一个示例性实施例，一种用于基板去除的方法包括从半导体芯片电路的靠近电路侧并与背面相反的背面去除基板的一部分。作为通过装置传播的检测到的声能的函数去除衬底。检测到的声能可以与参数相关，并用于控制衬底移除过程，提高了有效和准确地测试半导体器件的能力。

9. 发明授权

US06248600B1 Led in substrate with back side monitoring 失效
标题翻译：带背面监测基板
公开(公告)号：US06248600B1
公开(公告)日：2001-06-19
申请号：US09409976
申请日：1999-09-30
申请人： Michael R. Bruce , Jeffrey D. Birdsley , Rosalinda M. Ring , Rama R. Goruganthu , Brennan V. Davis
发明人： Michael R. Bruce , Jeffrey D. Birdsley , Rosalinda M. Ring , Rama R. Goruganthu , Brennan V. Davis
IPC分类号： H01L2100
CPC分类号： H01L21/306
摘要： Post-manufacturing analysis of a semiconductor device is enhanced via a method that uses a light emitting diode (LED) formed in a semiconductor die. According to an example embodiment of the present invention, a LED is formed within a semiconductor die having a circuit side opposite a back side. The LED is activated and generates radiation. Substrate is removed from the device, and the amount of radiation that passes through the substrate is detected. The amount of radiation that passes through the die is a function of the absorption characteristics of the die and the substrate thickness. By detecting the radiation and using the absorption characteristics of the die, the amount of substrate remaining in the back side of the die is determined and the substrate removal process is controlled therefrom.
摘要翻译：通过使用形成在半导体管芯中的发光二极管（LED）的方法来增强半导体器件的制造后分析。根据本发明的示例性实施例，在具有与背面相对的电路侧的半导体管芯内形成LED。 LED被激活并产生辐射。从器件中去除衬底，并检测穿过衬底的辐射量。通过模具的辐射量是模具的吸收特性和基板厚度的函数。通过检测辐射并使用模具的吸收特性，确定保留在模具背面的基板的量，并从中控制基板去除过程。

10. 发明授权

US06850081B1 Semiconductor die analysis via fiber optic communication 失效
标题翻译：通过光纤通信进行半导体芯片分析
公开(公告)号：US06850081B1
公开(公告)日：2005-02-01
申请号：US10164506
申请日：2002-06-05
申请人： Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring , Daniel L. Stone
发明人： Jeffrey D. Birdsley , Michael R. Bruce , Brennan V. Davis , Rosalinda M. Ring , Daniel L. Stone
IPC分类号： G01R31/28 , G01R31/319 , G01R31/303
CPC分类号： G01R31/2884 , G01R31/31905
摘要： Semiconductor analysis is improved via the use of fiber optic communications. According to an example embodiment of the present invention, a stimulation device is adapted to stimulate an integrated circuit die, and the die generates a response to the stimulation. An optical signal generator, either incorporated into the die or coupled to the die, detects the response, converts the response to an optical signal and transmits the optical signal. The optical signal is received at a testing arrangement adapted to analyze the die therefrom. The optical signal is used to analyze the die, improving signal quality and the ability to perform high-speed analysis of the die.
摘要翻译：通过使用光纤通信改进了半导体分析。根据本发明的示例性实施例，刺激装置适于刺激集成电路管芯，并且管芯产生对刺激的响应。将光信号发生器并入芯片或耦合到管芯，检测响应，将响应转换为光信号并发送光信号。光学信号在适于从其分析模具的测试装置处被接收。光信号用于分析芯片，提高信号质量和对芯片进行高速分析的能力。

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