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1. 发明申请

US20050156216A1 Ferroelectric capacitor and method of manufacturing the same 失效
标题翻译：铁电电容器及其制造方法
公开(公告)号：US20050156216A1
公开(公告)日：2005-07-21
申请号：US11081663
申请日：2005-03-17
申请人： Jeffrey Cross , Mineharu Tsukada , John Baniecki , Kenji Nomura , Igor Stolichnov
发明人： Jeffrey Cross , Mineharu Tsukada , John Baniecki , Kenji Nomura , Igor Stolichnov
IPC分类号： G11C11/22 , H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L29/94
CPC分类号： G11C11/22 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L28/65 , H01L28/75
摘要： After a step of fabricating a MOS transistor (14) on a semiconductor substrate (11) and further steps up to bury a W plug (24), an Ir film (25a), an IrOy film (25b), a PZT film (26), and an IrOx film (27) are formed sequentially over the entire surface. The composition of the PZT film (26) is such that the content of Pb exceeds that of Zr and that of Ti. After processing the Ir film (25a), the IrOy film (25b), the PZT film (26) and the IrOx film (27), annealing is effected to remedy the damage to the PZT film (26) that is caused when the IrOx film (27) is formed and to diffuse Ir in the IrOx film (27) into the PZT film (26). As a result, the Ir diffused into the PZT film (26) concentrates at an interface between the IrOx film (27) and the PZT film (26) and at grain boundaries in the PZT film (26), and the Ir concentrations at the interface and boundaries are higher than those in the grains.
摘要翻译：在半导体衬底（11）上制造MOS晶体管（14）的步骤之后，进一步升高以埋入W插头（24），Ir膜（25a），IrO薄膜（25b），PZT膜（26）和IrO膜（27）在整个表面上依次形成。 PZT膜（26）的组成使得Pb的含量超过Zr和Ti的含量。在Ir膜（25a），IrO薄膜（25b），PZT膜（26）和IrO薄膜（27）的处理之后，退火是用于补救当形成IrO x薄膜（27）时引起的PZT薄膜（26）的损坏并在IrO薄膜（27）中扩展Ir ）进入PZT膜（26）。结果，扩散到PZT膜（26）中的Ir浓缩在IrO x膜（27）和PZT膜（26）之间的界面处，并且在PZT膜（26）中的晶界处），界面和边界处的Ir浓度高于晶粒中的浓度。

2. 发明申请

US20060211156A1 Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device 失效
公开(公告)号：US20060211156A1
公开(公告)日：2006-09-21
申请号：US11440061
申请日：2006-05-25
申请人： Jeffrey Cross , Mineharu Tsukada , Yoshimasa Horii , Alexei Gruverman , Angus Kingon
发明人： Jeffrey Cross , Mineharu Tsukada , Yoshimasa Horii , Alexei Gruverman , Angus Kingon
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , G11C11/22 , H01L24/27 , H01L24/743 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.

3. 发明申请

US20060273365A1 Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device 失效
标题翻译：半导体器件及其制造方法以及半导体器件的测量夹具
公开(公告)号：US20060273365A1
公开(公告)日：2006-12-07
申请号：US11440068
申请日：2006-05-25
申请人： Jeffrey Cross , Mineharu Tsukada , Yoshimasa Horii , Alexei Gruverman , Angus Kingon
发明人： Jeffrey Cross , Mineharu Tsukada , Yoshimasa Horii , Alexei Gruverman , Angus Kingon
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , G11C11/22 , H01L24/27 , H01L24/743 , H01L27/105 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83192 , H01L2224/92247 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device comprises a substrate, a ferroelectric capacitor which includes a ferroelectric film on the substrate, and a stress application layer which applies tensile or compressive stress to the ferroelectric film of the ferroelectric capacitor by applying stress to the substrate.
摘要翻译：半导体器件包括基板，在基板上包括铁电体膜的铁电电容器，以及通过向基板施加应力而对强电介质电容器的铁电体膜施加拉伸或压缩应力的应力施加层。

4. 发明申请

US20060293738A1 Systems and methods for creating a lesion using transjugular approach 失效
公开(公告)号：US20060293738A1
公开(公告)日：2006-12-28
申请号：US11168234
申请日：2005-06-27
申请人： Jeffrey Cross , Paul DiCarlo
发明人： Jeffrey Cross , Paul DiCarlo
IPC分类号： A61N1/00
CPC分类号： A61B18/00 , A61B18/1477 , A61B18/1492 , A61B2018/0016 , A61B2018/00345 , A61B2018/00404 , A61B2018/00577 , A61B2018/1425 , A61B2018/143 , A61B2018/1475
摘要： A method of treating a tissue region includes inserting a flexible sheath within a vessel, the vessel leading to a tissue region, placing a distal end of the sheath through a wall of the vessel to thereby position the distal end is at or adjacent the tissue region, deploying a plurality of electrodes from the distal end of the sheath such that tips of the deployed electrodes approximately face towards a proximal end, and delivering energy to the tissue region using the deployed electrodes.

5. 发明申请

US20060212023A1 Locking drainage catheter 审中-公开
标题翻译：锁排水导管
公开(公告)号：US20060212023A1
公开(公告)日：2006-09-21
申请号：US11082431
申请日：2005-03-17
申请人： Jeffrey Cross
发明人： Jeffrey Cross
IPC分类号： A61M25/00
CPC分类号： A61M25/0097 , A61M2025/0163
摘要： A catheter comprises an elongated body extending from a curved, distal portion to a proximal portion and including a fluid transport lumen extending therethrough and a suture lock collar slidably coupled to the proximal portion for movement relative thereto. The suture lock collar includes a connection for coupling a fluid receiving structure to a proximal end of the catheter in combination with an actuation member connected to a distal end of the distal portion and extending through the catheter to couple to the suture lock collar so that movement of the suture lock collar proximally along the elongated body draws the suture proximally and curls the distal portion into a desired shape.
摘要翻译：导管包括从弯曲的远端部分延伸到近端部分并且包括延伸穿过其中的流体输送腔的细长主体和可滑动地联接到近端部分以相对于其移动的缝合线锁定环。缝合线锁定环包括用于将流体接收结构连接到导管的近端的连接件，其与连接到远侧部分的远端并且延伸穿过导管以联接到缝合线锁定环的致动构件组合，使得运动沿着细长体向近侧缝合线锁定环的近侧将缝合线拉近并将远端部分卷曲成所需的形状。

6. 发明申请

US20090076412A1 Apparatus and Methods for Obtaining a Sample of Tissue 审中-公开
标题翻译：用于获得组织样品的装置和方法
公开(公告)号：US20090076412A1
公开(公告)日：2009-03-19
申请号：US12209515
申请日：2008-09-12
申请人： Robert Rioux , Jeffrey Cross , Kathleen Kane
发明人： Robert Rioux , Jeffrey Cross , Kathleen Kane
IPC分类号： A61B10/02
CPC分类号： A61B18/1482 , A61B10/0266 , A61B2018/1407 , A61B2018/144
摘要： Described herein are systems and methods for obtaining a sample of tissue with low power electrosurgical energy. The systems can include an apparatus for obtaining a sample of tissue from a patient having a cannula having a distal opening for receiving the sample of tissue. A wire, located proximate to the distal opening, can delivery energy to ablate tissue such that damage to the tissue sample is minimized.
摘要翻译：本文描述了用于获得具有低功率电外科能量的组织样品的系统和方法。该系统可以包括用于从患者获得组织样品的装置，该装置具有用于接收组织样本的远端开口的套管。位于靠近远侧开口的导线可以输送能量以烧蚀组织，使得组织样本的损伤最小化。

7. 发明申请

US20070111336A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070111336A1
公开(公告)日：2007-05-17
申请号：US11648546
申请日：2007-01-03
申请人： Kenji Maruyama , Jeffrey Cross
发明人： Kenji Maruyama , Jeffrey Cross
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507
摘要： Two ferroelectric capacitors including a PZT film are connected to one MOS transistor. Electrodes of the ferroelectric capacitor are arranged above a main plane of a substrate parallel to the main plane. Therefore, high capacity can be obtained easily. Furthermore, a (001) direction of the PZT film is parallel to the virtual straight line linking between the two electrodes. Therefore, a direction in which an electric field is applied coincides with a direction of a polarization axis, so that high electric charge amount of remanent polarization can be obtained.
摘要翻译：包括PZT膜的两个铁电电容器连接到一个MOS晶体管。铁电电容器的电极布置在平行于主平面的基板的主平面上方。因此，容易获得高容量。此外，PZT膜的（001）方向平行于连接在两个电极之间的虚拟直线。因此，施加电场的方向与偏振轴的方向一致，从而可以获得高剩余极化电荷量。

8. 发明申请

US20050214954A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050214954A1
公开(公告)日：2005-09-29
申请号：US10902082
申请日：2004-07-30
申请人： Kenji Maruyama , Jeffrey Cross
发明人： Kenji Maruyama , Jeffrey Cross
IPC分类号： H01L27/105 , H01L21/00 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/11507
摘要： Two ferroelectric capacitors including a PZT film are connected to one MOS transistor. Electrodes of the ferroelectric capacitor are arranged above a main plane of a substrate parallel to the main plane. Therefore, high capacity can be obtained easily. Furthermore, a (001) direction of the PZT film is parallel to the virtual straight line linking between the two electrodes. Therefore, a direction in which an electric field is applied coincides with a direction of a polarization axis, so that high electric charge amount of remanent polarization can be obtained.
摘要翻译：包括PZT膜的两个铁电电容器连接到一个MOS晶体管。铁电电容器的电极布置在平行于主平面的基板的主平面上方。因此，容易获得高容量。此外，PZT膜的（001）方向平行于连接在两个电极之间的虚拟直线。因此，施加电场的方向与偏振轴的方向一致，从而可以获得高剩余极化电荷量。

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