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1. 发明授权

US08793558B2 Adaptive error correction for non-volatile memories 有权
标题翻译：非易失性存储器的自适应纠错
公开(公告)号：US08793558B2
公开(公告)日：2014-07-29
申请号：US13595282
申请日：2012-08-27
申请人： Jeffrey C. Cunningham , Horacio P. Gasquet , Ross S. Scouller , Marco A. Cabassi
发明人： Jeffrey C. Cunningham , Horacio P. Gasquet , Ross S. Scouller , Marco A. Cabassi
IPC分类号： H03M13/00
CPC分类号： G06F11/1048 , G11C29/026 , G11C29/028
摘要： Adaptive error correction for non-volatile memories is disclosed that dynamically adjusts sense amplifier read detection windows. Memory control circuitry uses error correction code (ECC) routines to detect bit errors that are non-correctable using these ECC routines. The memory control circuitry then dynamically adjusts sense amplifier read detection windows to allow for correct data to be determined. Corrected data can then be output to external circuitry. The corrected data can also be stored for later access when subsequent read operations attempt to access address locations that previously suffered bit failures. The adaptive error correction can also be used with respect to memories that are not non-volatile memories.
摘要翻译：公开了用于非易失性存储器的自适应纠错，其动态地调整读出放大器读取检测窗口。存储器控制电路使用纠错码（ECC）例程来检测使用这些ECC例程不可校正的位错误。存储器控制电路然后动态地调整读出放大器读取检测窗口以允许确定正确的数据。校正的数据可以输出到外部电路。当随后的读取操作尝试访问先前遭受比特故障的地址位置时，也可以存储校正的数据以供稍后访问。相对于不是非易失性存储器的存储器也可以使用自适应纠错。

2. 发明申请

US20140059398A1 ADAPTIVE ERROR CORRECTION FOR NON-VOLATILE MEMORIES 有权
标题翻译：非易失性存储器的自适应错误校正
公开(公告)号：US20140059398A1
公开(公告)日：2014-02-27
申请号：US13595282
申请日：2012-08-27
申请人： Jeffrey C. Cunningham , Horacio P. Gasquet , Ross S. Scouller , Marco A. Cabassi
发明人： Jeffrey C. Cunningham , Horacio P. Gasquet , Ross S. Scouller , Marco A. Cabassi
IPC分类号： G11C29/04 , G06F11/08
CPC分类号： G06F11/1048 , G11C29/026 , G11C29/028
摘要： Methods and systems are disclosed for adaptive error correction for non-volatile memories that dynamically adjust sense amplifier read detection windows. Memory control circuitry uses error correction code (ECC) routines to detect bit errors that are non-correctable using these ECC routines. The memory control circuitry then dynamically adjusts sense amplifier read detection windows to allow for correct data to be determined. Corrected data can then be output to external circuitry. The corrected data can also be stored for later access when subsequent read operations attempt to access address locations that previously suffered bit failures. The disclosed methods and systems can also be used with respect to memories that are not non-volatile memories.
摘要翻译：公开了用于动态调整读出放大器读取检测窗口的非易失性存储器的自适应纠错的方法和系统。存储器控制电路使用纠错码（ECC）例程来检测使用这些ECC例程不可校正的位错误。存储器控制电路然后动态地调整读出放大器读取检测窗口以允许确定正确的数据。校正的数据可以输出到外部电路。当随后的读取操作尝试访问先前遭受比特故障的地址位置时，也可以存储校正的数据以供稍后访问。所公开的方法和系统也可以用于不是非易失性存储器的存储器。

3. 发明授权

US07742340B2 Read reference technique with current degradation protection 失效
标题翻译：阅读参考技术与当前的降解保护
公开(公告)号：US07742340B2
公开(公告)日：2010-06-22
申请号：US12048683
申请日：2008-03-14
申请人： Fuchen Mu , Marco A. Cabassi , Ronald J. Syzdek
发明人： Fuchen Mu , Marco A. Cabassi , Ronald J. Syzdek
IPC分类号： G11C16/06
CPC分类号： G11C16/28 , G11C7/14 , G11C11/5642
摘要： A set of reference cells is used for sensing the data values stored at bit cells of a memory device. In response to an event, the reference cell providing the highest output of the set is selected as the reference cell to be used for subsequent memory access operations. The remaining reference cells are disabled so that they can recover back to or near their original non-degraded states. At each successive event, the set of reference cells can be reassessed to identify the reference cell that provides the highest output at that time and the memory device can be reconfigured to utilize the reference cell so identified. By utilizing the reference cell having the highest output to provide the read reference and disabling the remaining reference cells, the likelihood of the read reference falling below a minimum threshold can be reduced.
摘要翻译：一组参考单元用于感测存储在存储器件的位单元中的数据值。响应于事件，提供集合的最高输出的参考单元被选择为用于后续存储器存取操作的参考单元。剩余的参考单元被禁用，使得它们可以恢复到其原始非退化状态或其附近。在每个连续事件中，可以重新评估参考单元集合以识别在该时间提供最高输出的参考单元，并且可重新配置存储器件以利用如此识别的参考单元。通过利用具有最高输出的参考单元来提供读取参考并禁用剩余的参考单元，可以减少低于最小阈值的读取参考的可能性。

4. 发明申请

US20090231925A1 READ REFERENCE TECHNIQUE WITH CURRENT DEGRADATION PROTECTION 失效
标题翻译：阅读参考技术与电流降解保护
公开(公告)号：US20090231925A1
公开(公告)日：2009-09-17
申请号：US12048683
申请日：2008-03-14
申请人： Fuchen Mu , Marco A. Cabassi , Ronald J. Syzdek
发明人： Fuchen Mu , Marco A. Cabassi , Ronald J. Syzdek
IPC分类号： G11C16/06 , G11C16/26
CPC分类号： G11C16/28 , G11C7/14 , G11C11/5642
摘要： A set of reference cells is used for sensing the data values stored at bit cells of a memory device. In response to an event, the reference cell providing the highest output of the set is selected as the reference cell to be used for subsequent memory access operations. The remaining reference cells are disabled so that they can recover back to or near their original non-degraded states. At each successive event, the set of reference cells can be reassessed to identify the reference cell that provides the highest output at that time and the memory device can be reconfigured to utilize the reference cell so identified. By utilizing the reference cell having the highest output to provide the read reference and disabling the remaining reference cells, the likelihood of the read reference falling below a minimum threshold can be reduced.
摘要翻译：一组参考单元用于感测存储在存储器件的位单元中的数据值。响应于事件，提供集合的最高输出的参考单元被选择为用于后续存储器存取操作的参考单元。剩余的参考单元被禁用，使得它们可以恢复到其原始非退化状态或其附近。在每个连续事件中，可以重新评估参考单元集合以识别在该时间提供最高输出的参考单元，并且可重新配置存储器件以利用如此识别的参考单元。通过利用具有最高输出的参考单元来提供读取参考并禁用剩余的参考单元，可以减少低于最小阈值的读取参考的可能性。

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