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1. 发明授权

US06998277B2 Method of planarizing spin-on material layer and manufacturing photoresist layer 有权
标题翻译：平面化旋涂材料层和制造光刻胶层的方法
公开(公告)号：US06998277B2
公开(公告)日：2006-02-14
申请号：US10711379
申请日：2004-09-15
申请人： Jefferson Lu , Nien-Yu Tsai , Shu-Ching Yang
发明人： Jefferson Lu , Nien-Yu Tsai , Shu-Ching Yang
IPC分类号： H01L21/00
CPC分类号： H01L21/31058 , H01L21/31138 , H01L21/31144 , H01L21/76808 , H01L22/26 , H01L29/945
摘要： A method of planarizing a spin-on material layer is provided. A substrate having a plurality of openings thereon is provided. A spin-on material layer is formed on the substrate such that the openings are completely filled. A plasma etching process is carried out to remove a portion of the spin-on material layer and expose the substrate surface. During the plasma etching process, the substrate is cooled to maintain an etching selectivity between the spin-on material layer on the substrate surface and the spin-on material layer within the openings so that a planar spin-on material layer is ultimately obtained.
摘要翻译：提供了一种平面化旋涂材料层的方法。提供其上具有多个开口的基板。在基板上形成旋涂材料层，使得开口被完全填充。进行等离子体蚀刻工艺以去除旋涂材料层的一部分并暴露衬底表面。在等离子体蚀刻工艺期间，冷却基板以保持基板表面上的旋涂材料层和开口内的旋涂材料层之间的蚀刻选择性，从而最终获得平面旋涂材料层。

2. 发明申请

US20050196879A1 METHOD OF PLANARIZING SPIN-ON MATERIAL LAYER AND MANUFACTURING PHOTORESIST LAYER 有权
标题翻译：旋转材料层平面化方法
公开(公告)号：US20050196879A1
公开(公告)日：2005-09-08
申请号：US10711379
申请日：2004-09-15
申请人： Jefferson Lu , Nien-Yu Tsai , Shu-Ching Yang
发明人： Jefferson Lu , Nien-Yu Tsai , Shu-Ching Yang
IPC分类号： H01L21/00
CPC分类号： H01L21/31058 , H01L21/31138 , H01L21/31144 , H01L21/76808 , H01L22/26 , H01L29/945
摘要： A method of planarizing a spin-on material layer is provided. A substrate having a plurality of openings thereon is provided. A spin-on material layer is formed on the substrate such that the openings are completely filled. A plasma etching process is carried out to remove a portion of the spin-on material layer and expose the substrate surface. During the plasma etching process, the substrate is cooled to maintain an etching selectivity between the spin-on material layer on the substrate surface and the spin-on material layer within the openings so that a planar spin-on material layer is ultimately obtained.
摘要翻译：提供了一种平面化旋涂材料层的方法。提供其上具有多个开口的基板。在基板上形成旋涂材料层，使得开口被完全填充。进行等离子体蚀刻工艺以去除旋涂材料层的一部分并暴露衬底表面。在等离子体蚀刻工艺期间，冷却基板以保持基板表面上的旋涂材料层和开口内的旋涂材料层之间的蚀刻选择性，从而最终获得平面旋涂材料层。

3. 发明授权

US06743726B2 Method for etching a trench through an anti-reflective coating 有权
标题翻译：通过抗反射涂层蚀刻沟槽的方法
公开(公告)号：US06743726B2
公开(公告)日：2004-06-01
申请号：US10192154
申请日：2002-07-11
申请人： Jefferson Lu , Nien-Yu Tsai
发明人： Jefferson Lu , Nien-Yu Tsai
IPC分类号： H01L21302
CPC分类号： H01L21/76808 , H01L21/0276 , H01L21/31138 , H01L21/31144 , H01L21/76232 , H01L21/76804
摘要： A method for manufacturing a semiconductor device that includes providing a substrate, providing a dielectric layer over the substrate, depositing a layer of anti-reflective coating over the dielectric layer, providing a layer of photoresist over the layer of anti-reflective coating, patterning and defining the photoresist layer to provide a plurality of photoresist structures, wherein at least two adjacent photoresist structures provide a first distance, anisotropically etching the layer of anti-reflective coating unmasked by the photoresist structures to remove only a portion of the anti-reflective coating layer, etching the anti-reflective coating to completely remove the layer of anti-reflective coating unmasked by the photoresist structures, and etching the dielectric layer to form at least one trench between the at least two adjacent photoresist structures, wherein the first distance is substantially equal to a second distance defining an opening at the top of the trench.
摘要翻译：一种用于制造半导体器件的方法，包括提供衬底，在衬底上提供电介质层，在电介质层上沉积抗反射涂层，在抗反射涂层层上提供一层光致抗蚀剂，图案化和限定光致抗蚀剂层以提供多个光致抗蚀剂结构，其中至少两个相邻的光致抗蚀剂结构提供第一距离，各向异性地蚀刻由光致抗蚀剂结构未掩模的抗反射涂层，以仅去除抗反射涂层的一部分，蚀刻抗反射涂层以完全去除由光致抗蚀剂结构未掩蔽的抗反射涂层，并蚀刻介电层以在至少两个相邻的光致抗蚀剂结构之间形成至少一个沟槽，其中第一距离基本相等到在沟槽顶部限定开口的第二距离。

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