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1. 发明授权

US5278094A Method of manufacturing a planar buried heterojunction laser 失效
标题翻译：制造平面埋入异质结激光器的方法
公开(公告)号：US5278094A
公开(公告)日：1994-01-11
申请号：US857383
申请日：1992-03-25
申请人： Jean-Louis Lievin , Lionel Le Gouezigou , Christine Labourie , Pierre Doussiere
发明人： Jean-Louis Lievin , Lionel Le Gouezigou , Christine Labourie , Pierre Doussiere
IPC分类号： H01S5/00 , H01L33/00 , H01S5/042 , H01S5/227 , H01L21/20
CPC分类号： H01L33/0062 , H01S5/227 , H01S5/2275
摘要： In a method of manufacturing a planar buried heterojunction laser a semiconductor structure is etched to delimit a laser stripe upstanding on a confinement layer. Lateral layers surround the laser stripe to constitute the planar buried heterojunction laser. They are formed by a non-selective growth method not only at the sides of said stripe but also on top of said stripe to create a parasitic projection. These layers and the projection are subsequently covered with a contact localizing layer. The projection is then removed to form a contact window in the contact localizing layer for localizing an electrical contact on top of the laser stripe. The invention finds a particular application in the manufacture of lasers for fiber optic telecommunication systems.
摘要翻译：在制造平面埋入异质结激光器的方法中，蚀刻半导体结构以限制在限制层上直立的激光条纹。横向层围绕激光条纹以构成平面埋入异质结激光器。它们不仅在所述条纹的侧面而且在所述条纹的顶部都通过非选择性生长方法形成，以产生寄生投影。这些层和突起随后被覆盖有接触定位层。然后去除突起以在接触定位层中形成接触窗口，用于定位激光条纹顶部的电接触。本发明在制造用于光纤通信系统的激光器中具有特殊应用。

2. 发明申请

US20230019747A1 HYBRID LASER ARCHITECTURE WITH ASYMMETRIC METAL SHUNT 有权
公开(公告)号：US20230019747A1
公开(公告)日：2023-01-19
申请号：US17952083
申请日：2022-09-23
申请人： Richard Jones , Pierre Doussiere , Aditi Mallik , Harel Frish , John Heck , Saeed Fathololoumi
发明人： Richard Jones , Pierre Doussiere , Aditi Mallik , Harel Frish , John Heck , Saeed Fathololoumi
IPC分类号： H01S5/024 , H01S5/22 , H01S5/02
摘要： Embodiments herein relate to an apparatus for use in a hybrid laser. The apparatus may include a silicon substrate and a waveguide to facilitate transmission of an optical signal in a first direction that is orthogonal to a surface of the silicon substrate. The apparatus may further include a metal shunt that is less than or equal to 10 micrometers from the waveguide in a second direction that is orthogonal to the surface of the silicon substrate and orthogonal to the first direction. Other embodiments may be described and/or claimed.

3. 发明授权

US09046359B2 Range imaging devices and methods 有权
标题翻译：范围成像设备和方法
公开(公告)号：US09046359B2
公开(公告)日：2015-06-02
申请号：US13478902
申请日：2012-05-23
申请人： Jay A. Skidmore , Victor Rossin , Pierre Doussiere
发明人： Jay A. Skidmore , Victor Rossin , Pierre Doussiere
IPC分类号： G01C3/08 , G01S13/88 , H01S5/40 , H01S5/024
CPC分类号： H01S5/024 , G01C3/08 , G01S13/88 , H01S5/02461 , H01S5/02469 , H01S5/02476 , H01S5/0262 , H01S5/4031
摘要： An array of laser diode emitters is used as an illumination source for a range imaging system. The laser diode emitters are disposed on a common substrate. When one of the emitters fails, the remaining emitters emit enough light to meet the output optical power specification. The emitters can be disposed with a tight spacing. The tight spacing facilitates packaging of the entire array into a compact single package on a common heat sink.
摘要翻译：激光二极管发射体阵列被用作范围成像系统的照明源。激光二极管发射器设置在公共衬底上。当其中一个发射器发生故障时，剩余的发射器发出足够的光以满足输出光功率规格。发射器可以间隔很紧的位置。紧密的间距有助于将整个阵列封装在公共散热器上的紧凑型单个封装中。

4. 发明申请

US20190157837A1 CURRENT CHANNEL FOR III-V SILICON HYBRID LASER 审中-公开
公开(公告)号：US20190157837A1
公开(公告)日：2019-05-23
申请号：US16236211
申请日：2018-12-28
申请人： Pierre Doussiere , George A. Ghiurcan , Jonathan K. Doylend , Harel Frish
发明人： Pierre Doussiere , George A. Ghiurcan , Jonathan K. Doylend , Harel Frish
IPC分类号： H01S5/065 , H04J14/02 , H04B10/25 , H01S5/0683 , H01S5/40 , G02B6/122 , G02B6/42
摘要： There is disclosed in one example a fiberoptic communication device, including: a modulator to modulate data onto a laser pulse; and a semiconductor laser source including an active optical waveguide to provide optical gain and support an optical mode, the laser source further including a V-shaped current channel superimposed on the optical waveguide, and disposed to feed the active optical waveguide with electrical current along its length, the current channel having a proximate end to the optical mode, the proximate end having a width substantially matching a diameter of the optical mode, and a removed end from the optical mode, wherein the removed end is substantially wider than the proximate end.

5. 发明授权

US5659646A Optical waveguide transition and method of fabricating it 失效
标题翻译：光波导过渡及其制造方法
公开(公告)号：US5659646A
公开(公告)日：1997-08-19
申请号：US378278
申请日：1995-01-26
申请人： Jean-Fran.cedilla.ois Vinchant , Pierre Doussiere
发明人： Jean-Fran.cedilla.ois Vinchant , Pierre Doussiere
IPC分类号： G02B6/122 , G02B6/13 , G02B6/30 , G02B6/42 , G02B6/10
CPC分类号： G02B6/1228 , G02B6/305
摘要： The invention concerns an optical waveguide transition and its fabrication method, enabling coupling between a buried optical waveguide and a ridged optical waveguide. The transition structure is formed during etching of a layer containing the buried optical waveguide, the transition area being formed by adiabatically increasing the lateral dimensions of the buried waveguide. Top layers are deposited on the buried waveguide and its widened structure in the transition area, and the ridged optical waveguide is fabricated with one part on top of the transition area. Coupling of the respective propagation modes in the buried and ridged waveguides is effected by mode adaptation in the region between the two waveguide structures in the transition area. The transition of the invention is made in two conventional epitaxy steps.
摘要翻译：本发明涉及一种光波导过渡及其制造方法，能够实现掩埋光波导与脊状光波导之间的耦合。在对包含掩埋光波导的层的蚀刻期间形成过渡结构，过渡区域通过绝热地增加掩埋波导的横向尺寸而形成。顶层沉积在掩埋波导上，并且其在过渡区域中的加宽结构，并且脊状光波导由一部分制造在过渡区域的顶部。通过在过渡区域中的两个波导结构之间的区域中的模式适应来实现掩埋和脊状波导中各个传播模式的耦合。本发明的转变在两个常规的外延步骤中进行。

6. 发明申请

US20190140426A1 LASER DEVICE WITH A STEPPED GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE 审中-公开
公开(公告)号：US20190140426A1
公开(公告)日：2019-05-09
申请号：US16235684
申请日：2018-12-28
申请人： Jonathan K. Doylend , Pierre Doussiere
发明人： Jonathan K. Doylend , Pierre Doussiere
IPC分类号： H01S5/34 , H04B10/40 , H01S5/20 , H01S5/343
摘要： Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.

7. 发明授权

US5717711A Laser device, notably for optical pumping, and method of fabricating it 失效
标题翻译：激光装置，特别是用于光泵浦，及其制造方法
公开(公告)号：US5717711A
公开(公告)日：1998-02-10
申请号：US753093
申请日：1996-11-20
申请人： Pierre Doussiere , Isabelle Riant
发明人： Pierre Doussiere , Isabelle Riant
IPC分类号： G02B6/42 , H01S3/06 , H01S3/067 , H01S3/094 , H01S3/10 , H01S5/00 , H01S5/022 , H01S5/14 , H01S5/16 , H01S5/223 , H01S3/08 , G02B6/30 , H01L21/20
CPC分类号： H01S5/16 , H01S5/146 , H01S2301/18 , H01S2302/00 , H01S3/06754 , H01S3/094 , H01S5/02284 , H01S5/101 , H01S5/223
摘要： In a laser device, notably for optical pumping, the wafer includes an expansion segment adjacent the exit to prevent degradation of the exit facet of the semiconductor wafer that constitutes the amplifying part of the laser. The other facet is reflective and a Bragg grating is formed in a coupling fiber disposed near the exit facet. Applications include optical pumping of erbium-doped fiber amplifiers.
摘要翻译：在激光装置中，特别是用于光泵浦，晶片包括邻近出口的扩展段，以防止构成激光器的放大部分的半导体晶片的出射面的劣化。另一个面是反射性的，并且在设置在出射面附近的耦合光纤中形成布拉格光栅。应用包括掺铒光纤放大器的光泵浦。

8. 发明申请

US20230087429A1 SCALABLE COHERENT PHOTONIC INTEGRATED CIRCUIT (PIC) ARCHITECTURE 有权
公开(公告)号：US20230087429A1
公开(公告)日：2023-03-23
申请号：US18071337
申请日：2022-11-29
申请人： Giovanni Gilardi , Haijiang Yu , Ansheng Liu , Xiaoxing Zhu , Yuliya Akulova , Raghuram Narayan , Pierre Doussiere , Christian Malouin , Olufemi Dosunmu
发明人： Giovanni Gilardi , Haijiang Yu , Ansheng Liu , Xiaoxing Zhu , Yuliya Akulova , Raghuram Narayan , Pierre Doussiere , Christian Malouin , Olufemi Dosunmu
IPC分类号： G02B6/12 , H01S5/026 , H01S5/50
摘要： Embodiments herein relate to a photonic integrated circuit (PIC). The PIC may include a transmit module and a receive module. An optical port of the PIC may be coupled to the transmit module or the receive module. A semiconductor optical amplifier (SOA) may be positioned in a signal pathway between the optical port and the transmit module or the receive module. Other embodiments may be described and/or claimed.

9. 发明申请

US20130314693A1 RANGE IMAGING DEVICES AND METHODS 有权
公开(公告)号：US20130314693A1
公开(公告)日：2013-11-28
申请号：US13478902
申请日：2012-05-23
申请人： Jay A. Skidmore , Victor Rossin , Pierre Doussiere
发明人： Jay A. Skidmore , Victor Rossin , Pierre Doussiere
IPC分类号： G01C3/08 , H01S5/40
CPC分类号： H01S5/024 , G01C3/08 , G01S13/88 , H01S5/02461 , H01S5/02469 , H01S5/02476 , H01S5/0262 , H01S5/4031
摘要： An array of laser diode emitters is used as an illumination source for a range imaging system. The laser diode emitters are disposed on a common substrate. When one of the emitters fails, the remaining emitters emit enough light to meet the output optical power specification. The emitters can be disposed with a tight spacing. The tight spacing facilitates packaging of the entire array into a compact single package on a common heat sink.

10. 发明申请

US20100140632A1 Multi-Electrode Light Emitting Device 有权
标题翻译：多电极发光装置
公开(公告)号：US20100140632A1
公开(公告)日：2010-06-10
申请号：US12329100
申请日：2008-12-05
申请人： Pierre Doussiere
发明人： Pierre Doussiere
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L33/0045 , H01S5/3201
摘要： The invention relates to a broad-band light emitting diode having an active layer composed of a plurality of light emission regions of differing materials for emitting light at a plurality of wavelengths, wherein each of the emission regions of the active layer is electrically controlled by a separate electrode for providing a broad-band emission or optical gain with a multi-point control of its spectral profile.
摘要翻译：本发明涉及一种宽带发光二极管，其具有由多个用于发射多个波长的光的不同材料的发光区域组成的有源层，其中有源层的每个发射区域由单独的电极，用于通过其光谱分布的多点控制提供宽带发射或光学增益。

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