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    • 4. 发明申请
    • Method and apparatus for processing substrates using a laser
    • 使用激光加工基板的方法和装置
    • US20120067858A1
    • 2012-03-22
    • US13375499
    • 2009-06-04
    • Jarno KangastupaTiina Amberla
    • Jarno KangastupaTiina Amberla
    • B23K26/00
    • C03C23/0025B23K26/0624B23K26/244B23K26/32B23K2101/40B23K2103/50B28D5/0011C03B33/0222C03B33/082Y02P40/57
    • The invention relates to a method and apparatus for processing substrates, such as glass and semiconductor wafers. The method comprises directing to the substrate from a laser source a plurality of sequential focused laser pulses having a predetermined duration, pulsing frequency and focal spot diameter, the pulses being capable of locally melting the substrate, and moving the laser source and the substrate with respect to each other at a predetermined moving velocity so that a structurally modified zone is formed to the substrate. According to the invention, the pulse duration is in the range of 20-100 ps, pulsing frequency at least 1 MHz and moving velocity adjusted such that the distance between successive pulses is less than ⅕ of the diameter of the focal spot. The invention can be utilized, for example, for efficient dicing, scribing and welding of materials which are normally transparent.
    • 本发明涉及用于处理诸如玻璃和半导体晶片的衬底的方法和装置。 该方法包括从激光源引导具有预定持续时间,脉冲频率和焦斑直径的多个顺序聚焦的激光脉冲,脉冲能够局部熔化基板,以及相对于基板移动激光源和基板 以预定的移动速度彼此相连,从而在基底上形成结构上改性的区域。 根据本发明,脉冲持续时间在20-100ps的范围内,脉冲频率至少为1MHz,移动速度被调整为使得连续脉冲之间的距离小于焦点直径的。。 本发明可以用于例如通常是透明的材料的有效切割,划线和焊接。