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1. 发明公开

US20240113174A1 LAMINATE AND METHOD OF MANUFACTURING LAMINATE 审中-公开
公开(公告)号：US20240113174A1
公开(公告)日：2024-04-04
申请号：US18532505
申请日：2023-12-07
申请人： Japan Display Inc. , MEIJO UNIVERSITY
发明人： Masanobu IKEDA , Arichika ISHIDA , Satoshi KAMIYAMA , Motoaki IWAYA , Tetsuya TAKEUCHI
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/02422 , H01L21/0254 , H01L21/02631 , H01L33/32
摘要： A laminate includes an amorphous glass substrate, and an AlN layer formed on the amorphous glass substrate. The AlN layer is c-axis oriented on the amorphous glass substrate, a glass transition temperature (Tg) of the amorphous glass substrate is 720° C. to 810° C., a coefficient of thermal expansion (CTE) of the amorphous glass substrate is 3.5×10−6 [1/K] to 4.0×10−6 [1/K], and a softening point of the amorphous glass substrate is 950° C. to 1050° C.

2. 发明申请

US20220246789A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220246789A1
公开(公告)日：2022-08-04
申请号：US17587397
申请日：2022-01-28
申请人： TOYODA GOSEI CO., LTD. , MEIJO UNIVERSITY , KOITO MANUFACTURING CO., LTD.
发明人： Koji OKUNO , Koichi MIZUTANI , Masaki OYA , Kazuyoshi IIDA , Naoki SONE , Satoshi KAMIYAMA , Tetsuya TAKEUCHI , Motoaki IWAYA , Isamu AKASAKI
IPC分类号： H01L33/00 , H01L33/38
摘要： A buried layer forming step includes three steps of a facet structure forming step, a c-plane forming step, and a flattening step. In the facet structure forming step, a buried layer grows to form a periodic facet structure that matches an arrangement pattern of columnar semiconductors. In the c-plane forming step, the buried layer grows such that a {0001} plane (upper surface) is formed in a region of the buried layer corresponding to an upper portion of the columnar semiconductor. In the flattening step, lateral growth of the buried layer is promoted and the c-plane formed in the c-plane forming step is widened to flatten a surface of the buried layer.

3. 发明申请

US20220246793A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20220246793A1
公开(公告)日：2022-08-04
申请号：US17581256
申请日：2022-01-21
申请人： TOYODA GOSEI CO.. LTD. , MEIJO UNIVERSITY
发明人： Koji OKUNO , Koichi MIZUTANI , Masaki OYA , Kazuyoshi IIDA , Satoshi KAMIYAMA , Tetsuya TAKEUCHI , Motoaki IWAYA , Isamu AKASAKI
IPC分类号： H01L33/08 , H01L33/00 , H01L33/06 , H01L33/24
摘要： To suppress current leakage between the semiconductor layer below the mask and the buried layer above the mask. To reduce the drive voltage and improve the emission efficiency by improving the efficiency of carrier injection into the active layer. The semiconductor light-emitting device includes a substrate, a mask, a columnar semiconductor, a buried layer, a cathode electrode, and an anode electrode. The substrate has a conductive substrate, an n-type semiconductor layer disposed on the conductive substrate, and a p-type semiconductor layer disposed on the n-type semiconductor layer. The p-type semiconductor layer has a high resistance, thereby enhancing insulation between the n-type semiconductor layer and the buried layer.

4. 发明申请

US20160365479A1 METHOD OF MANUFACTURING N-P-N NITRIDE-SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND N-P-N NITRIDE-SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：制造N-P-N氮化物半导体发光器件的方法和N-P-N氮化物半导体发光器件
公开(公告)号：US20160365479A1
公开(公告)日：2016-12-15
申请号：US15244763
申请日：2016-08-23
申请人： MEIJO UNIVERSITY
发明人： Tetsuya TAKEUCHI , Yuka KUWANO , Motoaki IWAYA , Isamu AKASAKI
IPC分类号： H01L33/04 , H01L33/00 , H01L33/32 , H01L33/14
CPC分类号： H01L33/04 , H01L33/007 , H01L33/0075 , H01L33/14 , H01L33/32
摘要： This application provides a method of manufacturing an n-p-n nitride-semiconductor light-emitting device which includes a current confinement region(A) using a buried tunnel junction layer and in which a favorable luminous efficacy can be obtained and to provide the n-p-n nitride-semiconductor light-emitting device. The p-type activation of a p-type GaN crystal layer stacked below a tunnel junction layer is performed in an intermediate phase of a manufacturing process in which the p-type GaN crystal layer is exposed to atmosphere gas with the tunnel junction layer partially removed, before the tunnel junction layer is buried in an n-type GaN crystal layer . In the intermediate phase of the manufacturing process in which the p-type GaN crystal layer is exposed, p-type activation is efficiently performed on the p-type GaN crystal layer , and a p-type GaN crystal layer with low electric resistance can be obtained.
摘要翻译：本申请提供了一种制造npn氮化物半导体发光器件的方法，其包括使用掩埋隧道结层的电流限制区域（A），并且其中可获得良好的发光效率并提供npn氮化物半导体光设备。堆叠在隧道结层下面的p型GaN晶体层的p型激活在其中p型GaN晶体层暴露于大气气体并且部分地去除了隧道结层的制造工艺的中间阶段中进行在隧道结层埋入n型GaN晶体层之前。在p型GaN晶体层露出的制造工艺的中间相中，对p型GaN晶体层有效地进行p型激活，并且具有低电阻的p型GaN晶体层可以是获得。

5. 发明申请

US20160308094A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20160308094A1
公开(公告)日：2016-10-20
申请号：US15094289
申请日：2016-04-08
申请人： MEIJO UNIVERSITY
发明人： Tetsuya TAKEUCHI , Daisuke KOMORI , Kaku TAKARABE , Motoaki IWAYA , Isamu AKASAKI
IPC分类号： H01L33/14 , H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/007 , H01L33/12 , H01L33/325
摘要： A nitride semiconductor light emitting device includes a substrate as a base and an n-type semiconductor layer grown on a surface side of the substrate. In the device, antimony (Sb) is added to the n-type semiconductor layer so that a molar fraction is not less than 0.1%. The n-type semiconductor layer has an electron concentration of not less than 1×1018 cm−3.
摘要翻译：氮化物半导体发光器件包括作为基底的衬底和在衬底的表面侧上生长的n型半导体层。在该装置中，将锑（Sb）添加到n型半导体层中，使得摩尔分数不小于0.1％。 n型半导体层的电子浓度不小于1×1018cm-3。

6. 发明申请

US20160163919A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH PERIODIC GAIN ACTIVE LAYERS 有权
标题翻译：具有周期性增益活性层的氮化物半导体发光器件
公开(公告)号：US20160163919A1
公开(公告)日：2016-06-09
申请号：US14955409
申请日：2015-12-01
申请人： STANLEY ELECTRIC CO., LTD. , MEIJO UNIVERSITY
发明人： Kenjo MATSUI , Tetsuya TAKEUCHI , Motoaki IWAYA , Isamu AKASAKI , Takanobu AKAGI , Sho IWAYAMA
IPC分类号： H01L33/06 , H01L33/08 , H01L33/32
CPC分类号： H01L33/06 , H01L33/105 , H01S5/00 , H01S5/0425 , H01S5/1096 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor light-emitting device with periodic gain active layers includes an n-type semiconductor layer, a p-type semiconductor layer and a resonator. The device further includes a plurality of active layers disposed between the n-type and p-type semiconductor layers so as to correspond to a peak intensity position of light existing in the resonator and at least one interlayer disposed between the active layers. The active layer disposed at the p-type semiconductor layer side has a larger light emission intensity than the active layer disposed at the n-type semiconductor layer side.
摘要翻译：具有周期性增益有源层的氮化物半导体发光器件包括n型半导体层，p型半导体层和谐振器。该器件还包括设置在n型和p型半导体层之间的多个有源层，以便对应于存在于谐振器中的光的峰值强度位置和设置在有源层之间的至少一层中间层。配置在p型半导体层侧的有源层的发光强度比设置在n型半导体层侧的有源层的发光强度大。

7. 发明公开

US20240072101A1 LED ARRAY 审中-公开
公开(公告)号：US20240072101A1
公开(公告)日：2024-02-29
申请号：US18230626
申请日：2023-08-05
申请人： SHARP KABUSHIKI KAISHA , Meijo University
发明人： YOSHIHIRO UETA , Motoaki IWAYA , Yoshinobu SUEHIRO , Yuta IMAIZUMI , Tatsunari SAITO
IPC分类号： H01L27/15
CPC分类号： H01L27/156
摘要： An LED array includes: a substrate having a depressing-projecting structure formed on a surface of the substrate; a planarization layer formed on the depressing-projecting structure; a plurality of micro LED elements each of which is formed on the planarization layer; and a stray light attenuating groove formed between a pair of adjacent micro LED elements among the plurality of micro LED elements, and extending from toward the pair of micro LED elements to toward the depressing-projecting structure at least part way of the planarization layer.

8. 发明申请

US20160149078A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20160149078A1
公开(公告)日：2016-05-26
申请号：US14899364
申请日：2014-06-16
申请人： MEIJO UNIVERSITY
发明人： Tetsuya TAKEUCHI , Motoaki IWAYA , Isamu AKASAKI
IPC分类号： H01L33/14 , H01L33/18 , H01L33/32 , H01L33/06
CPC分类号： H01L33/145 , H01L33/02 , H01L33/06 , H01L33/18 , H01L33/32 , H01S5/3054 , H01S5/3202 , H01S5/3409 , H01S5/34333
摘要： An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor light-emitting device is formed by stacking nitride semiconductor crystals each of which contains Al and has a polar or semipolar surface either serving as a growth face. The device includes an active layer (103), and first and second composition-graded layers (102, 104). The active layer (103) is interposed between the first and second composition-graded layers (102, 104). Each one of the first and second composition-graded layers is composition-graded so that an Al composition value is rendered smaller as each one of the first and second composition-graded layers (102, 104) comes close to a side where a sum of spontaneous polarization and piezoelectric polarization is negative.
摘要翻译：目的在于提高氮化物半导体发光元件的有源层的空穴注入效率。氮化物半导体发光器件通过层叠各自含有Al并且具有用作生长面的极性或半极性表面的氮化物半导体晶体形成。该装置包括有源层（103）以及第一和第二组分梯度层（102,104）。有源层（103）介于第一和第二组合物梯度层（102,104）之间。第一和第二组成梯度层中的每一个是组成分级的，使得当第一和第二组合物梯度层（102,104）中的每一个靠近一侧时，Al组成值变小，自发极化和压电极化为负。

9. 发明申请

US20160020359A1 NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：氮化物半导体晶体及其制造方法
公开(公告)号：US20160020359A1
公开(公告)日：2016-01-21
申请号：US14773045
申请日：2014-03-04
申请人： MEIJO UNIVERSITY
发明人： Tetsuya TAKEUCHI , Tomoyuki SUZUKI , Hiroki SASAJIMA , Motoaki IWAYA , Isamu AKASAKI
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/32 , C23C16/303 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L21/02549 , H01L21/0262 , H01L33/0075
摘要： Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate (105) a group III element and/or a compound thereof, a nitrogen element and/or a compound thereof and an Sb element and/or a compound thereof, all of which serve as materials, and thereby vapor-growing at least one layer of nitride semiconductor film (104). A supply ratio of the Sb element to the nitrogen element in a growth process of the at least one layer of the nitride semiconductor film (104) is set to not less than 0.004.
摘要翻译：在较低的温度下制造高质量的氮化物半导体晶体。通过将基板（105），第III族元素和/或其化合物，氮元素和/或其化合物和Sb元素和/或其化合物供给到基板（105）上来制造氮化物半导体晶体，所有这些都用作材料，从而蒸发生长至少一层氮化物半导体膜（104）。在氮化物半导体膜（104）的至少一层的生长工序中，Sb元素与氮元素的供给比例设定为0.004以上。

10. 发明申请

US20220285580A1 Semiconductor Light-Emitting Device 有权
公开(公告)号：US20220285580A1
公开(公告)日：2022-09-08
申请号：US17673006
申请日：2022-02-16
申请人： Toytoda Gosei Co., LTD. , Meijo University
发明人： Koji Okuno , Koichi MUZUTANI , Masaki OYA , Kazuyoshi IIDA , Satoshi KAMIYAMA , Tetsuya TEKEUCHI , Motoaki IWAYA , Isamu AKASAKI
IPC分类号： H01L33/08 , H01L33/06 , H01L33/14 , H01L33/24 , H01L33/38 , H01L33/42
摘要： The semiconductor light-emitting device includes an n-type semiconductor layer, a plurality of columnar semiconductors on the n-type semiconductor layer, a buried layer filling in a space between the columnar semiconductors, and a current suppression region suppressing a current. The columnar semiconductors has a hexagonal column and an active layer covering the hexagonal column. The hexagonal column has a hexagonal first surface and a second surface opposite to the first surface. The first surface of the columnar semiconductors faces the base layer. The second surface of the columnar semiconductors faces the current suppression region.

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