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1. 发明申请

US20060155040A1 Organic semiconducting materials 有权
标题翻译：有机半导体材料
公开(公告)号：US20060155040A1
公开(公告)日：2006-07-13
申请号：US10539745
申请日：2003-12-18
申请人： Janos Veres , Paul Brookes , Richard Williams , Simon Ogier , Soad Mohlaldin-Khaffaf , Stephen Leeming
发明人： Janos Veres , Paul Brookes , Richard Williams , Simon Ogier , Soad Mohlaldin-Khaffaf , Stephen Leeming
IPC分类号： C08K5/01
CPC分类号： H01L51/0035 , H01L27/288 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0059 , H01L51/006 , H01L51/0512 , H01L51/052 , Y02E10/549
摘要： A composition for use as an organic semiconducting (OSC) material, the composition comprising: (i) at least one higher molecular weight organic semiconducting compound having a number average molecular weight (Mn) of at least 5000, and (ii) at least one lower molecular weight organic semiconducting compound having a number average molecular weight (Mn) of 1000 or less. Use of the composition in an electronic device, e.g. FET or OLED.
摘要翻译：一种用作有机半导体（OSC）材料的组合物，该组合物包含：（i）至少一种数均分子量（M N n N）至少为5000的较高分子量的有机半导体化合物，和（ii）至少一种数均分子量（M N n N）为1000以下的低分子量有机半导体化合物。在电子设备中使用组合物，例如， FET或OLED。

2. 发明申请

US20070102696A1 Organic semiconducting layers 有权
公开(公告)号：US20070102696A1
公开(公告)日：2007-05-10
申请号：US10580552
申请日：2004-11-25
申请人： Beverley Brown , Janos Veres , Remi Anemian , Richard Williams , Simon Ogier , Stephen Leeming
发明人： Beverley Brown , Janos Veres , Remi Anemian , Richard Williams , Simon Ogier , Stephen Leeming
IPC分类号： H01L51/00 , C07F7/08
CPC分类号： C08L39/04 , C07F7/0805 , C07F7/081 , C08L35/06 , H01L51/0035 , H01L51/0036 , H01L51/0039 , H01L51/0052 , H01L51/0055 , H01L51/0056 , H01L51/0059 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/0094 , H01L51/0566 , H01L51/42 , H01L51/50 , Y02E10/549 , C08L2666/02 , C08L2666/28
摘要： An organic semiconducting layer formulation, which comprises: an organic binder which has a permittivity, ∈, at 1,000 Hz of 3.3 or less; and a polyacene compound of Formula: A: wherein: each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11 and (R12, which may be the same or different, independently represents hydrogen; an optionally substituted C1-C40 carbyl or hydrocarbyl group; an optionally substituted C1-C40 alkoxy group; an optionally substituted C6-C40 aryloxy group; an optionally substituted C7-C40 alkylaryloxy group; an optionally substituted C2-C40 alkoxycarbonyl group; an optionally substituted C7-C40 aryloxycarbonyl group; a cyano group (—CN); a carbamoyl group (—C(═O)NH2); a haloformyl group (—C(═O)—X, wherein X represents a halogen atom); a formyl group (—C(═O)—H); an isocyano group; an isocyanate group; a thiocyanate group or a thioisocyanate group; an optionally substituted amino group; a hydroxy group; a nitro group; a CF3 group; a halo group (CI, Br, F); or an optionally substituted silyl group; and wherein independently each pair of R2 and R3 and/or R8 and R9, may be cross-bridged to form a C4-C40 saturated or unsaturated ring, which saturated or unsaturated ring may be intervened by an oxygen atom, a sulphur atom or a group shown by formula —N(Ra)— (wherein Ra is a hydrogen atom or an optionally substituted hydrocarbon group), or may optionally be substituted; and wherein one or more of the carbon atoms of the polyacene skeleton may optionally be substituted by a heteroatom selected from O N, P, As, O, S, Se and Te; and wherein independently any two or more of the substituents R1-R12 which are located on adjacent ring positions of the polyacene may, together, optionally constitute a further C4-C40 saturated or unsaturated ring optionally interrupted by O, S or —N(Ra) where Ra is as defined above) or an aromatic ring system, fused to the polyacene; and wherein n is 0, 1, 2, 3 or 4, also claimed is an electronic device, particularly an organic field effect transistor comprising the organic semiconductor layer formulation.

3. 发明申请

US20070137520A1 ORGANIC SEMICONDUCTING LAYERS 有权
公开(公告)号：US20070137520A1
公开(公告)日：2007-06-21
申请号：US11671877
申请日：2007-02-06
申请人： Beverley Brown , Janos Veres , Remi Anemian , Richard Williams , Simon Ogier , Stephen Leeming
发明人： Beverley Brown , Janos Veres , Remi Anemian , Richard Williams , Simon Ogier , Stephen Leeming
IPC分类号： C09D11/00 , C08G77/00 , C08L83/00
CPC分类号： C08L39/04 , C07F7/0805 , C07F7/081 , C08L35/06 , H01L51/0035 , H01L51/0036 , H01L51/0039 , H01L51/0052 , H01L51/0055 , H01L51/0056 , H01L51/0059 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/0094 , H01L51/0566 , H01L51/42 , H01L51/50 , Y02E10/549 , C08L2666/02 , C08L2666/28
摘要： An organic semiconducting layer formulation, which comprises: an organic binder which has a permittivity, ε, at 1,000 Hz of 3.3 or less; and a polyacene compound of Formula: A: wherein: each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11 and R12, which may be the same or different, independently represents hydrogen; an optionally substituted C1-C40 carbyl or hydrocarbyl group; an optionally substituted C1-C40 alkoxy group; an optionally substituted C6-C40 aryloxy group; an optionally substituted C7-C40 alkylaryloxy group; an optionally substituted C2-C40 alkoxycarbonyl group; an optionally substituted C7-C40 aryloxycarbonyl group; a cyano group (—CN); a carbamoyl group (—C(═O)NII2); a haloformyl group (—C(═O)—X, wherein X represents a halogen atom); a formyl group (—C(═O)—H); an isocyano group; an isocyanate group; a thiocyanate group or a thioisocyanate group; an optionally substituted amino group; a hydroxy group; a nitro group; a CF3 group; a halo group (Cl, Br, F); or an optionally substituted silyl group; and wherein independently each pair of R2 said R3 and/or R8 and R9, may be cross-bridged to form a C4-C40 saturated or unsaturated ring, which saturated or unsaturated ring may be intervened by an oxygen atom, a sulphur atom or a group shown by formula —N(Ra)— (wherein Ra is a hydrogen atom or an optionally substituted hydrocarbon group), or may optionally be substituted; and wherein one or more of the carbon atoms of the polyacene skeleton may optionally be substituted by a heteroatom selected from N, P, As, O, S, Se and Te; and wherein independently any two or more of the substituent R1—R12 which are located on adjacent ring positions of the polyacene may, together, optionally constitute a further C4-C40 saturated or unsaturated ring optionally interrupted by O, S or —N(Ra) where Ra is as defined above) or an aromatic ring system, fused to the polyacene; and wherein n is 0, 1, 2, 3 or 4, also claimed is an electronic device, particularly an organic field effect transistor comprising the organic semiconductor layer formulation.

4. 发明申请

US20080009625A1 Organic semiconductor layers 有权
公开(公告)号：US20080009625A1
公开(公告)日：2008-01-10
申请号：US11822594
申请日：2007-07-09
申请人： Beverley Brown , Janos Veres , Remi Anemian , Richard Williams , Simon Ogier , Stephen Leeming
发明人： Beverley Brown , Janos Veres , Remi Anemian , Richard Williams , Simon Ogier , Stephen Leeming
IPC分类号： C07D401/10 , C07C50/22 , C07D409/10 , C07F7/08 , H01L51/30
CPC分类号： C08L39/04 , C07F7/0805 , C07F7/081 , C08L35/06 , H01L51/0035 , H01L51/0036 , H01L51/0039 , H01L51/0052 , H01L51/0055 , H01L51/0056 , H01L51/0059 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/0094 , H01L51/0566 , H01L51/42 , H01L51/50 , Y02E10/549 , C08L2666/02 , C08L2666/28
摘要： An organic semiconducting layer formulation, which comprises: an organic binder which has a permittivity, ε, at 1,000 Hz of 3.3 or less; and a polyacene compound of Formula: (A) wherein: each of R1, R2, R3, R, R5, R6, R7, R8, R9, R10, R11, and R12, which may be the same or different, independently represents hydrogen; an optionally substituted C1-C40 carbyl or hydrocarbyl group; an optionally substituted C1-C40 alkoxy group; an optionally substituted C6-C40 aryloxy group; an optionally substituted C7-C40 alkylaryloxy group; an optionally substituted C2-C40 alkoxycarbonyl group; an optionally substituted C7-C40 aryloxycarbonyl group; a cyano group (—CN); a carbamoyl group (—C(═O)NH2); a haloformyl group (—C(═O)—X, wherein X represents a halogen atom); a formyl group (—C(═O)—H); an isocyano group; an isocyanate group; a thiocyanate group or a thioisocyanate group; an optionally substituted amino group; a hydroxy group; a nitro group; a CF3 group; a halo group (CI, Br, F); or an optionally substituted silyl group; and wherein independently each pair of R2 and R3 and/or R8 and R9, may be cross-bridged to form a C4-C40 saturated or unsaturated ring, which saturated or unsaturated ring may be intervened by an oxygen atom, a sulphur atom or a group shown by formula —N(Ra)— (wherein Ra is a hydrogen atom or an optionally substituted hydrocarbon group), or may optionally be substituted; and wherein one or more of the carbon atoms of the polyacene skeleton may optionally be substituted by a heteroatom selected from N, P, As, O, S, Se and Te; and wherein independently any two or more of the substituents R1—R12 which are located on adjacent ring positions of the polyacene may, together, optionally constitute a further C4-C40 saturated or unsaturated ring optionally interrupted by O, S or —N(Ra) where Ra is as defined above) or an aromatic ring system, fused to the polyacene; and wherein n is 0, 1, 2, 3 or 4, also claimed is an electronic device, particularly an organic field effect transistor comprising the organic semiconductor layer formulation.

5. 发明申请

US20050104058A1 Organic field effect transistor with an organic dielectric 有权
标题翻译：具有有机电介质的有机场效应晶体管
公开(公告)号：US20050104058A1
公开(公告)日：2005-05-19
申请号：US10499040
申请日：2002-11-21
申请人： Janos Veres , Simon Ogier , Soad Mohialdin-Khaffaf , Stephen Leeming
发明人： Janos Veres , Simon Ogier , Soad Mohialdin-Khaffaf , Stephen Leeming
IPC分类号： H01L21/368 , H01L21/02 , H01L21/312 , H01L21/336 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40 , H01L29/08
CPC分类号： H01L51/052 , C08G2261/11 , C08G2261/12 , C08G2261/3142 , C08G2261/3162 , C08G2261/3223 , C08G2261/92 , C09B57/008 , C09B69/109 , H01L21/02118 , H01L21/0212 , H01L21/02183 , H01L21/02186 , H01L21/02282 , H01L21/312 , H01L21/3127 , H01L28/56 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0039 , H01L51/0043 , H01L51/0052 , H01L51/0059 , H01L51/0533 , H01L51/0541 , H01L51/0545
摘要： A process of manufacturing an organic field effect device is provided comprising the steps of (a) depositing from a solution an organic semiconductor layer; and (b) depositing from a solution a layer of low permittivity insulating material forming at least a part of a gate insulator, such that the low permittivity insulating material is in contact with the organic semiconductor layer, wherein the low permittivity insulating material is of relative permittivity from 1.1 to below 3.0. In addition, an organic field effect device manufactured by the process is provided.
摘要翻译：提供一种制造有机场效应器件的方法，包括以下步骤：（a）从溶液中沉积有机半导体层; 和（b）从溶液沉积形成栅极绝缘体的至少一部分的低介电常数绝缘材料层，使得低介电常数绝缘材料与有机半导体层接触，其中低介电常数绝缘材料是相对的介电常数从1.1到3.0。此外，提供了通过该方法制造的有机场效应器件。

6. 发明申请

US20070259477A1 Process for Making an Organic Field Effect Transistor 有权
标题翻译：制造有机场效应晶体管的工艺
公开(公告)号：US20070259477A1
公开(公告)日：2007-11-08
申请号：US11666751
申请日：2005-10-04
申请人： Beverley Brown , Janos Veres , Simon Ogier
发明人： Beverley Brown , Janos Veres , Simon Ogier
IPC分类号： H01L51/40
CPC分类号： H01L51/002 , H01L51/0055 , H01L51/0094 , H01L51/0516 , H01L51/0541 , Y02E10/549
摘要： The present invention relates to a process for reducing the mobility of an semiconductor (OSC) layer in an electronic device, which has a semiconducting channel area, in specific areas outside said channel area by applying an oxidzing agent to the OSC layer.
摘要翻译：本发明涉及通过向OSC层施加氧化剂来降低具有半导体沟道区域的电子器件中的半导体（OSC）层的移动性的方法，该方法在所述沟道区域外的特定区域中。

7. 发明申请

US20060238117A1 Organic light emitting diodes 有权
标题翻译：有机发光二极管
公开(公告)号：US20060238117A1
公开(公告)日：2006-10-26
申请号：US10523604
申请日：2003-07-30
申请人： Janos Veres , Simon Ogier , Stephen Yeates
发明人： Janos Veres , Simon Ogier , Stephen Yeates
IPC分类号： B05D5/12 , B05D5/00 , H05B33/10 , H01L51/50 , H01L51/56
CPC分类号： H01J1/62 , B82Y10/00 , G11C13/0014 , H01L27/3239 , H01L51/0004 , H01L51/0016 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/0059 , H01L51/0077 , H01L51/0081 , H01L51/0084 , H01L51/0086 , H01L51/0089 , H01L51/5096 , H01L51/56
摘要： This invention relates to organic light emitting diodes (OLEDs) and to methods for their manufacture. The invention provides an OLED element or display which enables contrast to be produced in an image. In accordance with the invention a layer of ink is patterned as a blocking layer between two OLED layers. The ink reduces or prevents conduction, i.e. movement of charge, between the two OLED layers in that area of the device. The ink may be dark in colour, e.g. black, to increase the contrast ratio of the OLED. The blocking layer is provided between any two layers in the OLED and blocks the charge movement in these areas. The blocking layer may comprise a multiplicity of ink dots, the density of which determines the extent to which conduction is hindered. The blocking layer may be produced as a “grey-scale” pattern wherein the density of dots is varied across the pattern.
摘要翻译：本发明涉及有机发光二极管（OLED）及其制造方法。本发明提供一种能够在图像中产生对比度的OLED元件或显示器。根据本发明，一层油墨被图案化为两个OLED层之间的阻挡层。油墨减少或防止在装置的该区域中的两个OLED层之间的传导，即电荷的移动。墨水的颜色可能较暗，例如黑色，以增加OLED的对比度。阻挡层设置在OLED中的任何两层之间，并阻止这些区域中的电荷移动。阻挡层可以包括多个墨点，其密度决定阻碍传导的程度。可以将阻挡层制成为“灰度”图案，其中点的密度在整个图案上变化。

8. 发明申请

US20060105492A1 Organic electronic devices 失效
标题翻译：有机电子设备
公开(公告)号：US20060105492A1
公开(公告)日：2006-05-18
申请号：US10523644
申请日：2003-07-30
申请人： Janos Veres , Simon Ogier , Stephen Yeates
发明人： Janos Veres , Simon Ogier , Stephen Yeates
IPC分类号： H01L21/00 , H01L51/40
CPC分类号： H01L51/0023 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L51/0022 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/0059 , H01L51/0077 , H01L51/0081 , H01L51/0084 , H01L51/0086 , H01L51/0089 , H01L51/56 , Y02E10/549
摘要： A method for forming an organic electronic device, which method comprises the steps of: a) forming a negative image of a desired pattern on a substrate or device layer with a lift-off ink; b) coating a first device layer to be patterned on top of the negative image; c) coating one or more further device layers to be patterned on top of the first device layer to be patterned; and d) removing the lift-off ink and unwanted portions of the device layers above it, thereby leaving the desired pattern of device layers. The method allows the formation of a device structure wherein the device layers to be patterned are self-aligned. The method enables a multiplicity of layers to be patterned in a single set of printing and lift-off steps using one pattern which ensures the excellent vertical alignment of edges, which would be difficult to achieve by direct printing. Horizontal alignment can also be achieved. The size of the device features can be reduced below the actual printing resolution. Examples of organic electronic devices include OFETs, OLEDs, memory, sensing elements, solar cells, photo-sensors, photoreceptors for electrophotography and the like.
摘要翻译：一种用于形成有机电子器件的方法，所述方法包括以下步骤：a）用剥离油墨在衬底或器件层上形成所需图案的负像; b）在负图像的顶部涂覆待图案化的第一器件层; c）在待图案化的第一器件层的顶部涂覆待图案化的一个或多个其它器件层; 以及d）去除剥离墨水和其上方的装置层的不希望的部分，从而留下所需的装置层图案。该方法允许形成器件结构，其中待图案化的器件层是自对准的。该方法使得可以使用一种图案在单组打印和剥离步骤中图案化多个层，其确保边缘的优异垂直对准，这将难以通过直接印刷实现。也可以实现水平对准。设备特征的大小可以降低到实际打印分辨率以下。有机电子器件的实例包括OFET，OLED，存储器，感测元件，太阳能电池，光电传感器，用于电子照相术的光感受器等。

9. 发明授权

US10090482B2 Transistors 有权
公开(公告)号：US10090482B2
公开(公告)日：2018-10-02
申请号：US14112157
申请日：2012-04-20
申请人： Simon Ogier , Marco Palumbo
发明人： Simon Ogier , Marco Palumbo
IPC分类号： H01L51/10 , H01L51/05
摘要： This invention comprises a field effect transistor which comprises source and drain electrodes (01) which are bridged by a semiconductor which comprises semiconducting crystallites, the conductivity of the semiconductor being controlled by a gate electrode (02) which is insulated from the semiconductor and the source and drain electrodes, to which a potential is applied for controlling the conductivity of the semiconductor, in which at least part of the facing surfaces of the source and drain electrodes are geometrically formed such that they provide current flow of different directions between the electrodes through the said channel. By this means current is caused to flow through more orientations of the crystals resulting in greater uniformity of performance between different transistors when there is a degree of variable crystallographic orientation.

10. 发明申请

US20140097426A1 TRANSISTORS 审中-公开
标题翻译：晶体管
公开(公告)号：US20140097426A1
公开(公告)日：2014-04-10
申请号：US14112157
申请日：2012-04-20
申请人： Simon Ogier , Marco Palumbo
发明人： Simon Ogier , Marco Palumbo
IPC分类号： H01L51/10 , H01L51/05
CPC分类号： H01L51/105 , H01L51/0512 , H01L51/0558 , H01L51/0566 , H01L51/102
摘要： This invention comprises a field effect transistor which comprises source and drain electrodes (01) which are bridged by a semiconductor which comprises semiconducting crystallites, the conductivity of the semiconductor being controlled by a gate electrode (02) which is insulated from the semiconductor and the source and drain electrodes, to which a potential is applied for controlling the conductivity of the semiconductor, in which at least part of the facing surfaces of the source and drain electrodes are geometrically formed such that they provide current flow of different directions between the electrodes through the said channel. By this means current is caused to flow through more orientations of the crystals resulting in greater uniformity of performance between different transistors when there is a degree of variable crystallographic orientation.
摘要翻译：本发明包括一种场效应晶体管，其包括由包括半导体晶体的半导体桥接的源极和漏极（01），半导体的导电性由与半导体和源极绝缘的栅电极（02）控制以及漏电极，其上施加电位以控制半导体的导电性，其中源电极和漏电极的至少部分面对表面几何地形成，使得它们通过电极提供电极之间的不同方向的电流说渠道。通过这种方式，当存在一定程度的可变晶体取向时，使电流流过晶体的更多取向，导致不同晶体管之间的更高的性能均匀性。

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