专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06586752B1 CaSO4 based thermoluminescent detector bonded with P-compound and a method for fabricating thereof 失效
标题翻译：与P化合物结合的CaSO 4基热发光检测器及其制造方法
公开(公告)号：US06586752B1
公开(公告)日：2003-07-01
申请号：US10006268
申请日：2001-12-03
申请人： Jang-Lyul Kim , Si-Young Chang , Douying Jin , Jeong-Sun Yang , Young-Mi Nam , Jung-Il Lee
发明人： Jang-Lyul Kim , Si-Young Chang , Douying Jin , Jeong-Sun Yang , Young-Mi Nam , Jung-Il Lee
IPC分类号： G01T111
CPC分类号： G01T1/11
摘要： Disclosed are a CaSO4 based TL detector bonded with phosphorous compound and a method for fabricating thereof. The CaSO4 based TL detector can be fabricated by mixing CaSO4 based TL powder with a phosphorous precursor; molding the mixture powder under pressure; and sintering the molded body. The TL detector has so high TL sensitivity as to effectively measure personnel dose equivalent and low dose detection. It can be also manufactured in various forms and is easily handled, finding numerous applications in personnel and environmental monitoring fields.
摘要翻译：公开了与磷化合物结合的基于CaSO 4的TL检测器及其制造方法。基于CaSO 4的TL检测器可以通过将基于CaSO 4的TL粉末与磷前体混合来制造; 在压力下成型混合粉末; 并烧结成型体。 TL检测器具有如此高的TL灵敏度，有效测量人员剂量当量和低剂量检测。它也可以以各种形式制造，易于处理，在人员和环境监测领域得到广泛的应用。

2. 发明授权

US07005084B2 Thermoluminescent detector of LiF containing Mg, Cu, Na and Si as dopants and its preparation 失效
标题翻译：含有Mg，Cu，Na和Si作为掺杂剂的LiF的热发光探测器及其制备
公开(公告)号：US07005084B2
公开(公告)日：2006-02-28
申请号：US10239317
申请日：2002-01-12
申请人： Jang-Lyul Kim , Si-Young Chang , Jung-Il Lee , Jeong-Sun Yang , Young-Mi Nam
发明人： Jang-Lyul Kim , Si-Young Chang , Jung-Il Lee , Jeong-Sun Yang , Young-Mi Nam
IPC分类号： C09K11/08 , C01D15/04 , G01T1/11
CPC分类号： G01T1/10
摘要： The disclosure concerns a pellet type LiF element for a thermoluminescent dosimetry (TLD) and its preparation. More particularly, the disclosure concerns the pellet type LiF element for a thermoluminescent dosimetry (TLD) which includes 0.35˜0.12% by mole of Mg source; 0.08˜0.001% by mole of Cu source; 1.3˜0.5% by mole of Na source; and 1.3˜0.5% by mole of Si source as dopants. The pellet type LiF element according to the present invention shows excellent sensitivity and has the preferred glow curve with a simple and single main peak.
摘要翻译：本公开涉及用于热发光剂量测定（TLD）的颗粒型LiF元件及其制备。更具体地，本公开涉及包含0.35〜0.12摩尔％的Mg源的热发光剂量测定法（TLD）的粒状LiF元素。 0.08〜0.001％的Cu源; 1.3％〜0.5％的Na源; 和1.3〜0.5摩尔％的Si源作为掺杂剂。根据本发明的颗粒型LiF元件显示出优异的灵敏度，并且具有优选的辉光曲线，具有简单且单一的主峰。

3. 发明授权

US07592609B2 Thermoluminescent dosimeter for radiation monitoring, comprising LiF doped with Mg, Cu, and Si, and fabrication method thereof 失效
标题翻译：用于辐射监测的热发射剂量计，包括掺杂有Mg，Cu和Si的LiF及其制造方法
公开(公告)号：US07592609B2
公开(公告)日：2009-09-22
申请号：US11789916
申请日：2007-04-26
申请人： Jang-Lyul Kim , Jung-Il Lee , Jeong-Sun Yang , Bong-Hwan Kim , Jong-Soo Kim
发明人： Jang-Lyul Kim , Jung-Il Lee , Jeong-Sun Yang , Bong-Hwan Kim , Jong-Soo Kim
IPC分类号： H05B33/00 , G01T1/10
CPC分类号： G01T1/11
摘要： Disclosed herein are a thermoluminescent dosimeter for radiation monitoring, comprising LiF doped with Mg, Cu and Si, and a fabrication method thereof. The LiF:Mg,Cu,Si thermoluminescent dosimeter is fabricated by heating a LiF-based thermoluminescent powder material having a composition of LiF mother material, 0.1-0.5 mol % of a Mg compound, 0.001-0.05 mol % of a Cu compound and 0.5-1.3 mol % of a Si compound to a temperature of 900-1200° C. to melt the LiF-based material, cooling the melted material, compression-molding the cooled material, sintering the molded material, cooling the sintered material, and then annealing the cooled material. The thermoluminescent dosimeter has high thermal stability and thus maintains constant thermoluminescence sensitivity even when it is annealed at a high temperature of more than 240° C. Moreover, it has a remarkably low residual signal, and shows excellent dosimetric characteristics, because it can maintain the same sensitivity as its initial readout value, even when it is reused.
摘要翻译：本文公开了一种用于辐射监测的热发光剂量计，其包括掺杂有Mg，Cu和Si的LiF及其制造方法。 LiF：Mg，Cu，Si热发光剂量计是通过加热LiF母体材料，0.1-0.5mol％的Mg化合物，0.001-0.05mol％的Cu化合物和0.5wt％的Cu化合物的LiF基热发光粉末材料 -1.3摩尔％的Si化合物至900-1200℃的温度以熔化LiF基材料，冷却熔融的材料，压缩模制冷却的材料，烧结模制材料，冷却烧结材料，然后退火冷却材料。热发光剂量计具有高的热稳定性，因此即使在高于240℃的高温下退火也能保持恒定的热发光灵敏度。此外，它具有非常低的残留信号，并且显示出优异的剂量特性，因为它可以保持与其初始读数值相同的灵敏度，即使在重复使用时也是如此。

4. 发明申请

US20080142731A1 Thermoluminescent dosimeter for radiation monitoring, comprising LiF doped with Mg, Cu, and Si, and fabrication method thereof 失效
标题翻译：用于辐射监测的热发射剂量计，包括掺杂有Mg，Cu和Si的LiF及其制造方法
公开(公告)号：US20080142731A1
公开(公告)日：2008-06-19
申请号：US11789916
申请日：2007-04-26
申请人： Jang-Lyul Kim , Jung-Il Lee , Jeong-Sun Yang , Bong-Hwan Kim , Jong-Soo Kim
发明人： Jang-Lyul Kim , Jung-Il Lee , Jeong-Sun Yang , Bong-Hwan Kim , Jong-Soo Kim
IPC分类号： G01T1/11
CPC分类号： G01T1/11
摘要： Disclosed herein are a thermoluminescent dosimeter for radiation monitoring, comprising LiF doped with Mg, Cu and Si, and a fabrication method thereof. The LiF:Mg,Cu,Si thermoluminescent dosimeter is fabricated by heating a LiF-based thermoluminescent powder material having a composition of LiF mother material, 0.1-0.5 mol % of a Mg compound, 0.001-0.05 mol % of a Cu compound and 0.5-1.3 mol % of a Si compound to a temperature of 900-1200° C. to melt the LiF-based material, cooling the melted material, compression-molding the cooled material, sintering the molded material, cooling the sintered material, and then annealing the cooled material. The thermoluminescent dosimeter has high thermal stability and thus maintains constant thermoluminescence sensitivity even when it is annealed at a high temperature of more than 240° C. Moreover, it has a remarkably low residual signal, and shows excellent dosimetric characteristics, because it can maintain the same sensitivity as its initial readout value, even when it is reused.
摘要翻译：本文公开了一种用于辐射监测的热发光剂量计，其包括掺杂有Mg，Cu和Si的LiF及其制造方法。 LiF：Mg，Cu，Si热发光剂量计是通过加热LiF母体材料，0.1-0.5mol％的Mg化合物，0.001-0.05mol％的Cu化合物和0.5wt％的Cu化合物的LiF基热发光粉末材料 -1.3摩尔％的Si化合物至900-1200℃的温度以熔化LiF基材料，冷却熔融的材料，压缩模制冷却的材料，烧结模制材料，冷却烧结材料，然后退火冷却材料。热发光剂量计具有高的热稳定性，因此即使在高于240℃的高温下退火也能保持恒定的热发光灵敏度。此外，它具有非常低的残留信号，并且显示出优异的剂量特性，因为它可以保持与其初始读数值相同的灵敏度，即使在重复使用时也是如此。

5. 发明授权

US07852453B2 IPS mode liquid crystal display device and method for fabricating thereof 有权
标题翻译： IPS模式液晶显示装置及其制造方法
公开(公告)号：US07852453B2
公开(公告)日：2010-12-14
申请号：US12561981
申请日：2009-09-17
申请人： Joon-Young Yang , Jung-Il Lee
发明人： Joon-Young Yang , Jung-Il Lee
IPC分类号： G02F1/13 , H01L21/77
CPC分类号： G02F1/134363 , G02F2001/136231
摘要： An IPS mode LCD device and a method for fabricating the same are disclosed. A switching device is formed at each unit pixel and then a passivation layer is formed thereon. A first concave pattern and a second concave pattern at each unit pixel by using one mask are formed, and a common electrode is formed in the first concave pattern and a pixel electrode is formed in the second concave pattern. Accordingly, the entire fabrication process is simplified.
摘要翻译：公开了IPS模式LCD装置及其制造方法。在每个单位像素处形成开关装置，然后在其上形成钝化层。形成通过使用一个掩模在每个单位像素处的第一凹形图案和第二凹形图案，并且在第一凹形图案中形成公共电极，并且在第二凹形图案中形成像素电极。因此，整个制造过程被简化。

6. 发明申请

US20070128742A1 METHOD OF FORMING SILICON-ON-INSULATOR (SOI) SEMICONDUCTOR SUBSTRATE AND SOI SEMICONDUCTOR SUBSTRATE FORMED THEREBY 审中-公开
标题翻译：形成硅绝缘体（SOI）半导体衬底和SOI半导体衬底的方法
公开(公告)号：US20070128742A1
公开(公告)日：2007-06-07
申请号：US11673865
申请日：2007-02-12
申请人： Jung-Il Lee , Geum-Jong Bae , Ki-Chul Kim , Hwa-Sung Rhee , Sang-Su Kim
发明人： Jung-Il Lee , Geum-Jong Bae , Ki-Chul Kim , Hwa-Sung Rhee , Sang-Su Kim
IPC分类号： H01L21/66 , H01L21/76
CPC分类号： H01L21/76254 , H01L21/76259
摘要： A method of forming a silicon-on-insulator (SOI) semiconductor substrate includes implanting hydrogen ions into a support substrate to form a microbubble layer apart from a surface of the support substrate, forming an SOI layer on the microbubble layer, forming a diffusion barrier layer over the SOI layer, forming a buried oxide layer on a handle substrate, contacting the diffusion barrier layer with the buried oxide layer to be bonded, and annealing the bonded support and handle substrates to separate the support substrate from the SOI layer, wherein the diffusion barrier layer is formed by an insulating layer having a lower impurity diffusion coefficient as compared with the buried oxide layer.
摘要翻译：形成绝缘体上硅（SOI）半导体衬底的方法包括将氢离子注入到支撑衬底中以形成与支撑衬底的表面隔开的微泡层，在微泡层上形成SOI层，形成扩散阻挡层在SOI层上形成掩埋氧化物层，在接触衬底上形成掩埋氧化物层，使扩散阻挡层与要接合的掩埋氧化物层接触，并对接合的支撑体和处理衬底退火以将支撑衬底与SOI层分离，其中通过与掩埋氧化物层相比具有较低杂质扩散系数的绝缘层形成扩散阻挡层。

7. 发明授权

US06881650B2 Method for forming SOI substrate 有权
标题翻译： SOI衬底的形成方法
公开(公告)号：US06881650B2
公开(公告)日：2005-04-19
申请号：US10307351
申请日：2002-12-02
申请人： Jung-Il Lee , Kazuyuki Fujihara , Nae-In Lee , Geum-Jong Bae , Hwa-Sung Rhee , Sang-su Kim
发明人： Jung-Il Lee , Kazuyuki Fujihara , Nae-In Lee , Geum-Jong Bae , Hwa-Sung Rhee , Sang-su Kim
IPC分类号： H01L21/205 , H01L21/02 , H01L21/20 , H01L21/30 , H01L21/46 , H01L21/762 , H01L27/12
CPC分类号： H01L21/76254
摘要： A method for forming SOI substrates including a SOI layer containing germanium and a strained silicon layer disposed on the SOI layer, comprises forming a relaxed silicon-germanium layer on a first silicon substrate using an epitaxial growth method, and forming a porous silicon-germanium layer thereon. A silicon-germanium epitaxial layer is formed on the porous silicon-germanium layer, an oxide layer is formed on a second silicon substrate, the second silicon substrate is bonded where the oxide layer is formed to the first silicon substrate where the silicon-germanium epitaxial layer is formed. Layers are removed to expose the silicon-germanium epitaxial layer and a strained silicon epitaxial layer is formed thereon. The porous silicon-germanium layer prevents lattice defects of the relaxed silicon-germanium layer from transferring to the silicon-germanium epitaxial layer. Therefore, it is possible to form the silicon-germanium layer and the strained silicon layer of the SOI layer without defects.
摘要翻译：一种用于形成包括含有锗的SOI层和设置在SOI层上的应变硅层的SOI衬底的方法包括：使用外延生长方法在第一硅衬底上形成松弛的硅 - 锗层，并且形成多孔硅 - 锗层上。在多孔硅锗层上形成硅 - 锗外延层，在第二硅衬底上形成氧化物层，将形成氧化物层的第二硅衬底接合到第一硅衬底上，其中硅 - 锗外延形成层。去除层以暴露硅 - 锗外延层，并在其上形成应变硅外延层。多孔硅 - 锗层防止松散的硅 - 锗层的晶格缺陷转移到硅 - 锗外延层。因此，可以形成SOI层的硅 - 锗层和应变硅层，而没有缺陷。

8. 发明授权

US5672726A Method for separating and purifying .alpha.-linolenic acid from perilla oil 失效
标题翻译：从紫苏油中分离和纯化α-亚麻酸的方法
公开(公告)号：US5672726A
公开(公告)日：1997-09-30
申请号：US512829
申请日：1995-08-09
申请人： Su-Noh Ryu , Jung-Il Lee , Bo-Young Jeong , Han-Sun Hur
发明人： Su-Noh Ryu , Jung-Il Lee , Bo-Young Jeong , Han-Sun Hur
IPC分类号： C07B63/00 , C07C51/47 , C07C57/12 , C11C1/08 , C07C1/60
CPC分类号： C07C51/47
摘要： Disclosed herein is a method for separating and purifying .alpha.-linolenic acid (ALA) from ALA-containing fatty acid mixtures by using a column chromatography, comprises the steps of: packing a column with silver nitrate(AgNO.sub.3)-impregnated silica gel as a stationary phase; passing the ALA-containing fatty acid mixtures through the column to adsorb the fatty acids to the stationary phase in the form of Ag.sup.+ -complexes; eluting the fatty acids with acetone-hexane mixtures; and collecting the fractions containing ALA having a purity of more than 95%.
摘要翻译：本文公开了一种通过使用柱色谱法从含ALA的脂肪酸混合物中分离和纯化α-亚麻酸（ALA）的方法，包括以下步骤：用硝酸银（AgNO 3）浸渍的硅胶将柱填充为固定相; 使含有ALA的脂肪酸混合物通过柱子以脂肪酸的形式吸附到固定相中，形成Ag + - 络合物; 用丙酮 - 己烷混合物洗脱脂肪酸; 并收集含有纯度大于95％的ALA的级分。

9. 发明授权

US08451410B2 Array substrate for wide viewing angle liquid crystal display device and mehod of manufacturing the same 有权
标题翻译：用于宽视角液晶显示装置的阵列基板及其制造方法
公开(公告)号：US08451410B2
公开(公告)日：2013-05-28
申请号：US13167523
申请日：2011-06-23
申请人： Jeong-Oh Kim , Jong-Won Moon , Jung-Il Lee
发明人： Jeong-Oh Kim , Jong-Won Moon , Jung-Il Lee
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F2001/134318
摘要： An array substrate for a wide viewing angle liquid crystal display device includes a gate line on a substrate, a data line crossing the gate line to define a pixel region, a thin film transistor electrically connected to the gate and data lines, a pixel electrode in the pixel region and connected to a drain electrode of the thin film transistor, the pixel electrode including two parts and an opening portion therebetween, a first common electrode in the opening portion, the first common electrode disposed on a same layer as the pixel electrode, a passivation layer on the pixel electrode and the first common electrode, the passivation layer having a common contact hole exposing the first common electrode, and a second common electrode on the passivation layer and connected to the first common electrode through the common contact hole, the second common electrode including first openings corresponding to the pixel electrode and a second opening corresponding to the opening portion.
摘要翻译：广视角液晶显示装置的阵列基板包括基板上的栅极线，与栅极线交叉以限定像素区域的数据线，与栅极和数据线电连接的薄膜晶体管，像素电极所述像素区域并连接到所述薄膜晶体管的漏电极，所述像素电极包括两部分和其间的开口部分，所述开口部分中的第一公共电极，设置在与所述像素电极相同的层上的所述第一公共电极，在所述像素电极和所述第一公共电极上的钝化层，所述钝化层具有暴露所述第一公共电极的公共接触孔，以及在所述钝化层上的第二公共电极，并且通过所述公共接触孔连接到所述第一公共电极，第二公共电极包括对应于像素电极的第一开口和对应于开口部分的第二开口。

10. 发明申请

US20110138688A1 FILM SHEET FOR AREA FOCUSING OF SUN LIGHT AND GREENHOUSE PROVIDED WITH THE SAME 有权
标题翻译：适用于太阳光和温室的区域聚焦薄膜
公开(公告)号：US20110138688A1
公开(公告)日：2011-06-16
申请号：US12962724
申请日：2010-12-08
申请人： Seong-Il KIM , Won-Jun Choi , Il-Ki Han , Jung-Il Lee
发明人： Seong-Il KIM , Won-Jun Choi , Il-Ki Han , Jung-Il Lee
IPC分类号： A01G9/14 , G02B27/12
CPC分类号： A01G9/243 , A01G9/1438 , F24S23/31 , G02B5/045 , Y02A40/252 , Y02A40/266 , Y02E10/43 , Y02P60/124
摘要： A film sheet for area-focusing of sunlight and a greenhouse provided with the same are provided. A film sheet includes i) a film having a rectangular shape, and ii) a plurality of prism assemblies formed on one surface of the film to extend in one direction. At least one prism assembly of the plurality of prism assemblies includes i) at least one first prism unit including a plurality of first prisms with slanted angles that are substantially the same as each other, and ii) at least one second prism unit neighboring the first prism unit and including a plurality of second prisms with slanted angles that are substantially the same as each other. The width of the first prism unit is substantially the same as the width of the second prism unit and a slanted angle of one first prism among the plurality of first prisms is different from a slanted angle of one second prism among the plurality of second prisms, and light entering the prism assembly is configured to be area-focused.
摘要翻译：提供了一种用于阳光区域聚焦的薄膜片和设有该阳光的温室。膜片包括i）具有矩形形状的膜，以及ii）形成在膜的一个表面上以在一个方向上延伸的多个棱镜组件。所述多个棱镜组件中的至少一个棱镜组件包括：i）至少一个第一棱镜单元，其包括具有彼此基本相同的倾斜角度的多个第一棱镜，以及ii）与第一棱镜单元相邻的至少一个第二棱镜单元棱镜单元，并且包括具有彼此基本相同的倾斜角度的多个第二棱镜。第一棱镜单元的宽度与第二棱镜单元的宽度基本相同，并且多个第一棱镜中的一个第一棱镜的倾斜角度与多个第二棱镜中的一个第二棱镜的倾斜角度不同，并且进入棱镜组件的光被配置为区域聚焦。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式