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1. 发明授权

US08395244B2 Fast recovery diode 有权
标题翻译：快速恢复二极管
公开(公告)号：US08395244B2
公开(公告)日：2013-03-12
申请号：US12942410
申请日：2010-11-09
申请人： Jan Vobecky , Kati Hemmann , Hamit Duran , Munaf Rahimo
发明人： Jan Vobecky , Kati Hemmann , Hamit Duran , Munaf Rahimo
IPC分类号： H01L21/02
CPC分类号： H01L29/8611 , H01L29/0661 , H01L29/32 , H01L29/36 , H01L29/66128
摘要： A fast recovery diode includes an n-doped base layer having a cathode side and an anode side opposite the cathode side. A p-doped anode layer is arranged on the anode side. The anode layer has a doping profile and includes at least two sublayers. A first one of the sublayers has a first maximum doping concentration, which is between 2*1016 cm−3 and 2*1017 cm−3 and which is higher than the maximum doping concentration of any other sublayer. A last one of the sublayers has a last sublayer depth, which is larger than any other sublayer depth. The last sublayer depth is between 90 to 120 μm. The doping profile of the anode layer declines such that a doping concentration in a range of 5*1014 cm−3 and 1*1015 cm−3 is reached between a first depth, which is at least 20 μm, and a second depth, which is at maximum 50 μm. Such a profile of the doping concentration is achieved by using aluminum diffused layers as the at least two sublayers.
摘要翻译：快速恢复二极管包括具有阴极侧和与阴极侧相对的阳极侧的n掺杂基极层。 p型掺杂阳极层设置在阳极侧。阳极层具有掺杂分布并且包括至少两个子层。第一个子层具有第一最大掺杂浓度，其在2×1016cm-3和2×1017cm-3之间，并且高于任何其它子层的最大掺杂浓度。最后一个子层具有比任何其他子层深度大的最后一个子层深度。最后的子层深度为90〜120μm。阳极层的掺杂分布下降，使得在第一深度（至少20μm）和第二深度之间达到在5×10 14 cm -3和1×10 15 cm -3范围内的掺杂浓度，其中最大为50μm。通过使用铝扩散层作为至少两个子层来实现掺杂浓度的这种分布。

2. 发明申请

US20110108953A1 FAST RECOVERY DIODE 有权
标题翻译：快速恢复二极管
公开(公告)号：US20110108953A1
公开(公告)日：2011-05-12
申请号：US12942410
申请日：2010-11-09
申请人： Jan VOBECKY , Kati Hemmann , Hamit Duran , Munaf Rahimo
发明人： Jan VOBECKY , Kati Hemmann , Hamit Duran , Munaf Rahimo
IPC分类号： H01L29/00 , H01L21/22
CPC分类号： H01L29/8611 , H01L29/0661 , H01L29/32 , H01L29/36 , H01L29/66128
摘要： A fast recovery diode includes an n-doped base layer having a cathode side and an anode side opposite the cathode side. A p-doped anode layer is arranged on the anode side. The anode layer has a doping profile and includes at least two sublayers. A first one of the sublayers has a first maximum doping concentration, which is between 2*1016 cm−3 and 2*1017 cm−3 and which is higher than the maximum doping concentration of any other sublayer. A last one of the sublayers has a last sublayer depth, which is larger than any other sublayer depth. The last sublayer depth is between 90 to 120 μm. The doping profile of the anode layer declines such that a doping concentration in a range of 5*1014 cm−3 and 1*1015 cm−3 is reached between a first depth, which is at least 20 μm, and a second depth, which is at maximum 50 μm. Such a profile of the doping concentration is achieved by using aluminium diffused layers as the at least two sublayers.
摘要翻译：快速恢复二极管包括具有阴极侧和与阴极侧相对的阳极侧的n掺杂基极层。 p型掺杂阳极层设置在阳极侧。阳极层具有掺杂分布并且包括至少两个子层。第一个子层具有第一最大掺杂浓度，其在2×1016cm-3和2×1017cm-3之间，并且高于任何其它子层的最大掺杂浓度。最后一个子层具有比任何其他子层深度大的最后一个子层深度。最后的子层深度为90〜120μm。阳极层的掺杂分布下降，使得在第一深度（至少20μm）和第二深度之间达到在5×10 14 cm -3和1×10 15 cm -3范围内的掺杂浓度，其中最大为50μm。通过使用铝扩散层作为至少两个子层来实现掺杂浓度的这种分布。

3. 发明申请

US20140055888A1 POWER MODULE AND METHOD OF OPERATING A POWER MODULE 审中-公开
标题翻译：电源模块和操作电源模块的方法
公开(公告)号：US20140055888A1
公开(公告)日：2014-02-27
申请号：US14116190
申请日：2011-05-10
申请人： Filippo Chimento , Georgios Demetriades , Hamit Duran
发明人： Filippo Chimento , Georgios Demetriades , Hamit Duran
IPC分类号： H03K17/08
CPC分类号： H03K17/08 , H03K17/0828 , H03K17/107 , H03K17/127
摘要： A power module (10), which is operated serially with other similar power modules in a converter valve, comprises a plurality of submodules (13a-d) connected in parallel, wherein each of the submodules includes one or several semiconductor elements connected in parallel and the power kind module is of the kind wherein if one of the submodules starts malfunctioning, the remaining ones of the submodules assume a closed circuit. The power module further comprises, for each of the submodules, a separate driver unit (14a-d) for driving the one or several semiconductor elements of that submodule, and a separate control unit (11a-d) for controlling the driver unit of that submodule. The power module may be used in HVDC or SVC apparatuses.
摘要翻译：与转换阀中的其它类似功率模块串联操作的功率模块（10）包括并联连接的多个子模块（13a-d），其中每个子模块包括并联连接的一个或多个半导体元件，电源类模块是其中如果其中一个子模块启动故障，其余的子模块将采取闭路电路。功率模块还包括用于每个子模块的用于驱动该子模块的一个或多个半导体元件的单独驱动器单元（14a-d），以及用于控制该子模块的驱动器单元的单独控制单元（11a-d）子模块功率模块可用于HVDC或SVC设备。

4. 发明授权

US08405992B2 Power-electronic arrangement 有权
标题翻译：电力电子安排
公开(公告)号：US08405992B2
公开(公告)日：2013-03-26
申请号：US12896031
申请日：2010-10-01
申请人： Berk Yesin , Bruno Agostini , Christoph Haederli , Chunlei Liu , Francesco Agostini , Hamit Duran , Slavo Kicin
发明人： Berk Yesin , Bruno Agostini , Christoph Haederli , Chunlei Liu , Francesco Agostini , Hamit Duran , Slavo Kicin
IPC分类号： H05K7/20 , F28F7/00 , H01L23/34
CPC分类号： H01L23/427 , F28D15/0233 , F28D15/0266 , H01L25/072 , H01L2924/0002 , H05K7/20936 , Y10T29/49826 , H01L2924/00
摘要： A power-electronic arrangement comprising semiconductor components (102, 103, 107), a heat exchanger (110), and an electrically conductive element (109) is presented. The heat exchanger comprises evaporator channels (111) and condenser channels (112) for working fluid. The electrically conductive element comprises a contact surface providing a thermal contact to outer surfaces of walls of the evaporator channels for transferring heat from the electrically conductive element to the evaporator channels. A main current terminal of each semiconductor component is bonded to the electrically conductive element which thus forms a part of a main current circuitry of a power system. As the main current terminal is directly bonded to the electrically conductive element cooled with the heat exchanger, the temperature gradients inside the semiconductor components can be kept moderate, and thus the temperatures inside the semiconductor components can be limited.
摘要翻译：提供了包括半导体部件（102,103,107），热交换器（110）和导电元件（109）的功率电子装置。热交换器包括用于工作流体的蒸发器通道（111）和冷凝器通道（112）。导电元件包括提供与蒸发器通道的壁的外表面的热接触的接触表面，用于将热量从导电元件传递到蒸发器通道。每个半导体部件的主电流端子被接合到导电元件，由此形成电力系统的主电流电路的一部分。由于主电流端子与由热交换器冷却的导电元件直接接合，所以半导体元件内的温度梯度可以保持适中，因此能够限制半导体元件内部的温度。

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