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1. 发明授权

US4191452A AC silicon PN junction photodiode light-valve substrate 失效
标题翻译：交流硅PN结光电二极管光阀基板
公开(公告)号：US4191452A
公开(公告)日：1980-03-04
申请号：US865281
申请日：1977-12-28
申请人： Jan Grinberg , Paul O. Braatz , Michael Waldner , Alexander D. Jacobson
发明人： Jan Grinberg , Paul O. Braatz , Michael Waldner , Alexander D. Jacobson
IPC分类号： G09G3/18 , G02F1/133 , G02F1/135 , G02F1/136 , G02F1/1362 , G02F1/1365 , G09F9/30 , H01L29/768 , H01L31/14 , H04N5/74
CPC分类号： H01L29/76833 , G02F1/135 , G02F1/136277
摘要： There is disclosed a single crystal silicon charge storage apparatus suitable for use in an alternating current driven liquid crystal light valve having therein a PIN photodiode structure. The charge storage medium is made of a high resistivity substrate on which an MOS capacitor is formed having fast photoelectric transient response an capable of operating over a wide frequency range. A PIN photodiode structure is provided on one side of the substrate next to the MOS capacitor to deplete the substrate of its mobile charge carriers during a portion of the AC cycle and to collect the electric field-guided signal representing charge carriers that are generated or introduced into the substrate by an input mechanism. The signal from the substrate is electrically coupled through high-reflectivity mirrors and light blocking layers to the liquid crystal.
摘要翻译：公开了一种适用于具有PIN光电二极管结构的交流驱动液晶光阀的单晶硅电荷存储装置。电荷存储介质由其上形成有能够在宽频率范围内工作的快速光电瞬变响应的MOS电容器的高电阻率衬底制成。在MOS电容器旁边的基板的一侧设置PIN光电二极管结构，以在AC周期的一部分期间消耗其移动电荷载流子的基板，并且收集表示产生或引入的电荷载流子的电场引导信号通过输入机构进入基板。来自基板的信号通过高反射镜和阻光层电耦合到液晶。

2. 发明授权

US4443064A High resolution AC silicon MOS-light-valve substrate 失效
标题翻译：高分辨率交流硅MOS光阀基板
公开(公告)号：US4443064A
公开(公告)日：1984-04-17
申请号：US214930
申请日：1980-12-10
申请人： Jan Grinberg , Michael Waldner , Paul O. Braatz , Alexander D. Jacobson
发明人： Jan Grinberg , Michael Waldner , Paul O. Braatz , Alexander D. Jacobson
IPC分类号： G02F1/135 , G02F1/1362 , G02F1/13
CPC分类号： G02F1/1354 , G02F1/136277
摘要： There is disclosed a single crystal silicon charge storage apparatus suitable for use in an alternating current driven liquid crystal light valve having therein a moderately doped microchannel stop grid. The charge storage medium is made of a high resistivity substrate on which an MOS capacitor is formed having fast photoelectric transient response and capable of operating over a wide frequency range. A doped microgrid structure is formed in one side of the substrate to prevent charge carrier spreading at the silicon-silicon dioxide interface and to provide a focusing electric field for the charge carriers. The signal from the substrate is electrically coupled through high-reflectivity mirrors and light blocking layers to the liquid crystal.
摘要翻译：公开了一种适用于具有适度掺杂的微通道停止栅格的交流驱动液晶光阀的单晶硅电荷存储装置。电荷存储介质由高电阻率基板制成，其上形成具有快速光电瞬态响应并能够在宽频率范围内工作的MOS电容器。在衬底的一侧形成掺杂的微电网结构，以防止电荷载体在硅 - 二氧化硅界面处扩散，并为电荷载体提供聚焦电场。来自基板的信号通过高反射镜和阻光层电耦合到液晶。

3. 发明授权

US4191454A Continuous silicon MOS AC light valve substrate 失效
标题翻译：连续硅MOS交流光阀基板
公开(公告)号：US4191454A
公开(公告)日：1980-03-04
申请号：US949840
申请日：1978-10-10
申请人： Paul O. Braatz , Jan Grinberg , Alexander D. Jacobson , Michael Waldner
发明人： Paul O. Braatz , Jan Grinberg , Alexander D. Jacobson , Michael Waldner
IPC分类号： G02F1/135 , G02F1/1362 , G02F1/13
CPC分类号： G02F1/136277 , G02F1/1354
摘要： There is disclosed a single crystal silicon charge storage apparatus suitable for use in an alternating current driven liquid crystal light valve. The charge storage medium is made of a high resistivity and photosensitive under AC excitation substrate on which an MOS capacitor is formed having fast photoelectric transient response and capable of operating over a wide frequency range. The AC activation provides to a liquid crystal light valve a greatly improved electrochemical stability. Electrically coupled high-reflectivity mirrors and light blocking layers can be used to couple the liquid crystal to the MOS capacitor.
摘要翻译：公开了一种适用于交流驱动液晶光阀的单晶硅电荷存储装置。电荷存储介质由交流激励基板上的高电阻率和感光性构成，其上形成具有快速光电瞬变响应且能够在较宽频率范围内工作的MOS电容器。 AC激活为液晶光阀提供了极大改善的电化学稳定性。可以使用电耦合的高反射镜和遮光层来将液晶耦合到MOS电容器。

4. 发明授权

US4198647A High resolution continuously distributed silicon photodiode substrate 失效
标题翻译：高分辨率连续分布硅光电二极管基板
公开(公告)号：US4198647A
公开(公告)日：1980-04-15
申请号：US4107
申请日：1979-01-17
申请人： Jan Grinberg , Alexander D. Jacobson , William P. Bleha, Jr. , Paul O. Braatz
发明人： Jan Grinberg , Alexander D. Jacobson , William P. Bleha, Jr. , Paul O. Braatz
IPC分类号： G02F1/135 , H01L27/14
CPC分类号： G02F1/1354
摘要： This invention is directed to a semiconductor structure that includes at least one wafer that is fully depleted of all mobile carriers and is used as a medium for the movement of spatially modulated signal represented by charge carriers through the wafer with a spatial resolution that is smaller than the thickness of the wafer. This may be used in the form of a continuous high resolution silicon photodiode substrate to serve as an image input means for an electro-optical display medium, such as a liquid crystal. Next to the photoactivated substrate is a liquid crystal and next to the crystal is a transparent electrode. The photodiode is reverse biased and both of its sides are depleted of all mobile charges throughout its entire thickness. Thus, charges generated in the substrate move to the display not by diffusion as in prior art devices (e.g. the solid state silicon vidicon) but by the influence of the electric field which tends to minimize their lateral spread and thereby achieves a high spatial resolution in spite of the continuous character of this silicon diode device.
摘要翻译：本发明涉及一种半导体结构，该半导体结构包括至少一个完全耗尽所有移动载波的晶片，并且用作用于通过晶片以空间分辨率移动由电荷载体表示的空间调制信号的介质，其空间分辨率小于晶片的厚度。这可以以连续的高分辨率硅光电二极管基板的形式使用，以用作诸如液晶的电光显示介质的图像输入装置。在光活化基板的旁边是液晶，并且在晶体旁边是透明电极。光电二极管是反向偏置的，并且其两侧在整个厚度上都耗尽所有移动电荷。因此，在现有技术的装置（例如，固态硅摄像机）中，在衬底中产生的电荷不会像扩散一样移动到显示器上，而是通过电场的影响，使得它们的横向扩展趋于最小化，从而实现高空间分辨率尽管这种硅二极管器件具有连续的特性。

5. 发明授权

US4093357A Cermet interface for electro-optical devices 失效
标题翻译：用于电光器件的金属陶瓷接口
公开(公告)号：US4093357A
公开(公告)日：1978-06-06
申请号：US784894
申请日：1977-04-05
申请人： Alexander D. Jacobson , Jan Grinberg , Paul O. Braatz , William P. Bleha, Jr.
发明人： Alexander D. Jacobson , Jan Grinberg , Paul O. Braatz , William P. Bleha, Jr.
IPC分类号： G02F1/135 , G02F1/153 , G02F1/13
CPC分类号： G02F1/135 , G02F1/1533 , G02F2001/1351
摘要： There is disclosed an anisotropically conductive interface comprising a plurality of cermet and dielectric layers for use in electro-optical devices to separate a substrate driver from an electro-optical display medium to prevent display light from affecting the driver. The substrate may be a photosensor, a charge coupled device or other matrix addressing circuitry arrangement. In general the substrate is one which can provide spatially modulated voltage and/or current patterns. The display medium may be a liquid crystal, an electro-chromic, an electro-luminescent material or the like. The interface provides direct current conductivity through the interface, insulative maintenance of the spatial modulation of the signal across the interface, light reflectivity, and high attenuation of transmitted light.
摘要翻译：公开了一种各向异性导电界面，其包括用于电光装置的多个金属陶瓷和电介质层，以将基板驱动器与电光显示介质分离，以防止显示光影响驱动器。衬底可以是光电传感器，电荷耦合器件或其他矩阵寻址电路装置。通常，衬底是可以提供空间调制的电压和/或电流图案的衬底。显示介质可以是液晶，电致铬，电致发光材料等。该接口通过接口提供直流电导率，绝缘维持跨越接口的信号的空间调制，光反射率和透射光的高衰减。

6. 发明授权

US4169231A Buried channel to surface channel CCD charge transfer structure 失效
标题翻译：掩埋通道对表面通道的CCD电荷转移结构
公开(公告)号：US4169231A
公开(公告)日：1979-09-25
申请号：US948946
申请日：1978-09-20
申请人： J. Gregory Nash , Jan Grinberg , Paul O. Braatz , Michael Waldner
发明人： J. Gregory Nash , Jan Grinberg , Paul O. Braatz , Michael Waldner
IPC分类号： G11C19/28 , H01L29/768 , H01L29/78
CPC分类号： H01L29/76833 , G11C19/285 , G11C19/287
摘要： A buried channel to surface channel charge coupled device includes a blocking gate and a transfer gate situated between a buried channel gate and a surface gate for transferring electron charge from the buried channel to the surface channel. The blocking gate is located over the buried channel and the transfer gate straddles the buried and surface channels. The blocking gate serves to overcome the potential barrier associated with buried to surface channel transfers.
摘要翻译：掩埋通道至表面沟道电荷耦合器件包括阻挡栅极和位于掩埋沟道栅极和表面栅极之间的传输栅极，用于将电子电荷从掩埋沟道转移到表面沟道。阻挡栅极位于掩埋沟道上方，并且传输门跨越埋入沟道和沟道。阻塞栅极用于克服与掩埋到表面通道传输相关联的势垒。

7. 发明授权

US5389788A Infrared transducer and goggles incorporating the same 失效
标题翻译：红外线传感器和护目镜结合在一起
公开(公告)号：US5389788A
公开(公告)日：1995-02-14
申请号：US166790
申请日：1993-12-13
申请人： Jan Grinberg , Raymond Balcerak , Chiung-Sheng Wu , Uzi Efron , Paul O. Braatz
发明人： Jan Grinberg , Raymond Balcerak , Chiung-Sheng Wu , Uzi Efron , Paul O. Braatz
IPC分类号： G01J5/04 , G01J5/20 , G02F1/135 , H01L27/146 , G02F1/136
CPC分类号： H01L27/146 , G02B23/125 , G02F1/1354 , H04N5/3651 , H04N5/33
摘要： An infrared (IR) radiation transducer integrates an IR detector array with a liquid crystal (LC) readout. The IR detector is preferably a pixelized bolometer array, but other detectors such as pyroelectric materials are possible. To modulate the LC in response to detected IR radiation, a modulating section is provided that includes a charge injection structure which injects electrical charge in response to the detected IR radiation, and a charge transfer structure that transfers the injected charge to the LC readout section. During its active phase the charge transfer layer is depleted of majority charge carriers, and the charge injection and transfer mechanism operates in a manner analogous to a bipolar transistor. A visible readout is obtained by directing readout light through the LC, where it is modulated in accordance with the detected IR image. The transducers are small and light weight enough to be incorporated into a pair of goggles, for which no separate cooling is required.
摘要翻译：红外（IR）辐射传感器将IR检测器阵列与液晶（LC）读数器集成。 IR检测器优选地是像素化的测辐射热计阵列，但是其他检测器如热电材料也是可能的。为了响应于检测到的IR辐射来调制LC，提供了调制部分，其包括响应于检测到的IR辐射而注入电荷的电荷注入结构，以及将注入的电荷传送到LC读出部分的电荷转移结构。在其活性阶段期间，电荷转移层耗尽多数电荷载流子，并且电荷注入和转移机制以类似于双极晶体管的方式工作。通过将读出光引导通过LC获得可见读出，其中根据检测到的IR图像进行调制。传感器体积小巧，重量轻，可以并入一副护目镜，不需要单独的冷却。

8. 依法登记的发明

USH840H Single-Schottky diode liquid crystal light valve and method 失效
标题翻译：单肖特基二极管液晶光阀及方法
公开(公告)号：USH840H
公开(公告)日：1990-11-06
申请号：US294611
申请日：1989-01-09
申请人： Uzi Efron , Paul O. Braatz , Jan Grinberg
发明人： Uzi Efron , Paul O. Braatz , Jan Grinberg
IPC分类号： G02F1/135
CPC分类号： G02F1/135
摘要： A single-Schottky liquid crystal is disclosed in which a series of Schottky contacts are made on one side of a photoconductor substrate by a metal matrix mirror, with a doped semiconductor back contact electrode on the other side of the substrate. The light valve offers several operational advantages over MOS devices, and is easier to fabricate than double-Schottky light valves. It can be operated either in an AC mode or, by doping the liquid crystal ions, in a DC mode.

9. 发明授权

US4239347A Semiconductor light valve having improved counterelectrode structure 失效
标题翻译：具有改进的反电极结构的半导体光阀
公开(公告)号：US4239347A
公开(公告)日：1980-12-16
申请号：US43077
申请日：1979-05-29
申请人： Paul O. Braatz , Kuen Chow , Jan Grinberg
发明人： Paul O. Braatz , Kuen Chow , Jan Grinberg
IPC分类号： G02F1/1345 , G02F1/135
CPC分类号： G02F1/1345 , G02F1/1354
摘要： A liquid crystal light valve having an improved counterelectrode structure. The light valve includes a layer of liquid crystal material which lies intermediate a photosensitive substrate of intrinsic semiconductive material and the counterelectrode. The upper surface of the substrate is characterized by a highly doped peripheral channel stop. The counterelectrode comprises electrically insulated inner and outer regions, the inner region substantially overlying only the intrinsic material interior said highly doped peripheral channel stop so that an electrical bias may be selectively applied, greatly enhancing the dark current breakdown voltage of the device.
摘要翻译：一种具有改进的反电极结构的液晶光阀。光阀包括位于本征半导体材料的光敏衬底和反电极之间的液晶材料层。衬底的上表面的特征在于高度掺杂的外围通道停止。反电极包括电绝缘的内部和外部区域，内部区域基本上仅覆盖内部材料内部，所述高度掺杂的外围通道停止，使得可以选择性地施加电偏压，大大增强了器件的暗电流击穿电压。

10. 发明授权

US5010251A Radiation detector array using radiation sensitive bridges 失效
标题翻译：辐射检测器阵列使用辐射敏感桥
公开(公告)号：US5010251A
公开(公告)日：1991-04-23
申请号：US463563
申请日：1990-01-11
申请人： Jan Grinberg , Murray S. Welkowsky , Chiung-Sheng Wu , Paul O. Braatz
发明人： Jan Grinberg , Murray S. Welkowsky , Chiung-Sheng Wu , Paul O. Braatz
IPC分类号： G01J5/10 , G01J5/20 , G01J5/22 , G01J5/52
CPC分类号： G01J5/10 , G01J5/20 , G01J5/22 , G01J5/522
摘要： An infrared (IR) simulator is disclosed in which an array of pixels is defined on an insulative substrate by resistor bridges which contact the substrate at spaced locations and are separated from the substrate, and thereby thermally insulated therefrom, between the contact locations. Semiconductor drive circuits on the substrate enable desired current flows through the resistor bridges in response to input control signals, thereby establishing the appropriate IR radiation from each of the pixels. The drive circuits and also at least some of the electrical lead lines are preferably located under the resistor bridges. A thermal reflector below each bridge shields the drive circuit and reflects radiation to enhance the IR output. The drive circuits employ sample and hold circuits which produce a substantially flicker-free operation, with the resistor bridges being impedance matched with their respective drive circuits. The resistor bridges may be formed by coating insulative base bridges with a resistive layer having the desired properties, and overcoating the resistive layers with a thermally emissive material. The array is preferably formed on a silicon-on-sapphire (SOS) wafer. Arrays of electromagnetic radiation bridge detectors may also be formed, with the bridges having either resistor, thermocouple or Schottky junction constructions.
摘要翻译：公开了一种红外（IR）模拟器，其中像素阵列通过电阻器桥限定在绝缘衬底上，电阻器桥在间隔开的位置处接触衬底，并且在接触位置之间与衬底分离，从而与衬底隔离。衬底上的半导体驱动电路响应于输入控制信号使期望的电流流过电阻器桥，从而从每个像素建立适当的红外辐射。驱动电路以及至少一些电引线优选位于电阻桥下。每个桥下的热反射器屏蔽驱动电路并反射辐射以增强IR输出。驱动电路采用产生基本上无闪烁操作的采样和保持电路，其中电阻器桥与它们各自的驱动电路阻抗匹配。可以通过用具有期望特性的电阻层涂覆绝缘基桥来形成电阻器桥，并用热发射材料覆盖电阻层。阵列优选形成在蓝宝石（SOS）硅晶片上。也可以形成电磁辐射桥接检测器阵列，其中桥具有电阻器，热电偶或肖特基结结构。

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