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1. 发明授权

US06965361B1 Method of manufacture of active matrix addressed polymer LED display 失效
标题翻译：有源矩阵寻址聚合物LED显示屏的制造方法
公开(公告)号：US06965361B1
公开(公告)日：2005-11-15
申请号：US09098190
申请日：1998-06-16
申请人： James R. Sheats , Mark R. Hueschen , Ronald L. Moon
发明人： James R. Sheats , Mark R. Hueschen , Ronald L. Moon
IPC分类号： G08B5/22 , G09G3/32 , H01L27/32
CPC分类号： H01L27/3251 , H01L27/322 , H01L2251/5338
摘要： A display having a plurality of light emitting pixels. Each pixels includes an isolation transistor, a driving circuit, and an organic light emitting diode (OLED). The driving circuit storing a value that determines the magnitude of the light emitted by that pixels, the driving circuit placing the OLED in a conducting path between the first and second power terminals. The driving circuit is programmed through the isolation transistor. In one embodiment of the present invention, the driving circuit includes a storage capacitor and a driving transistor. The OLEDs are part of an array of OLEDs. The array of OLEDs is constructed on a flexible sheet having first and second surfaces, the flexible sheet being transparent to light of a first wavelength. A transparent first electrode layer is in contact with the first surface. A light emitting layer including an organic polymer is in contact with the first electrode layer. A plurality of second electrodes, one such second electrode corresponding to each of the OLEDs, is in contact with the light emitting layer. Each second electrode has an isolated conducting area. The driving transistor are part of a transistor array having a plurality of connection points disposed on a surface, each connection point corresponding to one of the second electrodes in the array of OLEDs. The connection points are arranged such that each second electrode overlies the corresponding connection point when the array of OLEDs is properly aligned with the transistor array. The connection points are bonded to the corresponding second electrodes by a bonding layer.
摘要翻译：具有多个发光像素的显示器。每个像素包括隔离晶体管，驱动电路和有机发光二极管（OLED）。驱动电路存储确定由该像素发射的光的大小的值，驱动电路将OLED置于第一和第二电源端子之间的导电路径中。驱动电路通过隔离晶体管编程。在本发明的一个实施例中，驱动电路包括存储电容器和驱动晶体管。 OLED是OLED阵列的一部分。 OLED阵列构造在具有第一和第二表面的柔性片上，柔性片对第一波长的光是透明的。透明的第一电极层与第一表面接触。包含有机聚合物的发光层与第一电极层接触。多个第二电极，对应于每个OLED的一个这样的第二电极与发光层接触。每个第二电极具有隔离的导电区域。驱动晶体管是具有设置在表面上的多个连接点的晶体管阵列的一部分，每个连接点对应于OLED阵列中的第二电极之一。连接点布置成使得当OLED阵列与晶体管阵列正确对准时，每个第二电极覆盖相应的连接点。连接点通过接合层与相应的第二电极接合。

2. 发明授权

US06582756B1 Method and apparatus for fabricating polymer-based electroluminescent displays 有权
标题翻译：用于制造基于聚合物的电致发光显示器的方法和装置
公开(公告)号：US06582756B1
公开(公告)日：2003-06-24
申请号：US09717655
申请日：2000-11-21
申请人： Homer Antoniadis , Hoyle Curtis , Ronald L. Moon , Daniel B. Roitman , James R. Sheats
发明人： Homer Antoniadis , Hoyle Curtis , Ronald L. Moon , Daniel B. Roitman , James R. Sheats
IPC分类号： B05D512
CPC分类号： H01L27/3283 , H01L51/0004 , H01L51/5221 , H01L51/5253 , H01L2251/5315 , Y10S428/917
摘要： A method for fabricating an electroluminescent display and the substrate and apparatus used therein. The display is preferably constructed on a pre-constructed substrate that includes a flexible base layer having a conducting surface on one side thereof. The base layer is impermeable to oxygen and water. The substrate includes a plurality of wells defined by a barrier layer, each well having an electrode layer connected electrically with the conducting surface. A removable protective layer covering the wells protects the electrode layer from attack by oxygen and water prior to being utilized to make the display. In one embodiment, each of the wells also contains an electron transfer layer in contact with the electrode layer.
摘要翻译：一种用于制造电致发光显示器的方法及其中使用的基板和装置。显示器优选地构造在包括在其一侧具有导电表面的柔性基底层的预构造的基底上。基层对氧和水是不透水的。衬底包括由阻挡层限定的多个阱，每个阱具有与导电表面电连接的电极层。覆盖井的可移除的保护层在用于制造显示器之前保护电极层免受氧气和水的侵害。在一个实施例中，每个阱还包含与电极层接触的电子转移层。

3. 发明授权

US06174613B1 Method and apparatus for fabricating polymer-based electroluminescent displays 有权
标题翻译：用于制造基于聚合物的电致发光显示器的方法和装置
公开(公告)号：US06174613B1
公开(公告)日：2001-01-16
申请号：US09363964
申请日：1999-07-29
申请人： Homer Antoniadis , Hoyle Curtis , Ronald L. Moon , Daniel B. Roitman , James R. Sheats
发明人： Homer Antoniadis , Hoyle Curtis , Ronald L. Moon , Daniel B. Roitman , James R. Sheats
IPC分类号： B32B900
CPC分类号： H01L27/3283 , H01L51/0004 , H01L51/5221 , H01L51/5253 , H01L2251/5315 , Y10S428/917
摘要： A method for fabricating an electroluminescent display and the substrate and apparatus used therein. The display is preferably constructed on a pre-constructed substrate that includes a flexible base layer having a conducting surface on one side thereof. The base layer is impermeable to oxygen and water. The substrate includes a plurality of wells defined by a barrier layer, each well having an electrode layer connected electrically with the conducting surface. A removable protective layer covering the wells protects the electrode layer from attack by oxygen and water prior to being utilized to make the display. In one embodiment, each of the wells also contains an electron transfer layer in contact with the electrode layer. The electron transfer layer includes a material that improves the efficiency of the injection of electrons from the electrode layer into the electroluminescent layer of the display. This display is fabricated by moving a first dispenser relative to the substrate so as to quantitatively deposit a first electroluminescent material on the substrate, different amounts of the first electroluminescent material being deposited at different locations on the substrate in response to signals defining an illumination pattern to be generated by the display. A conducting material is deposited on the first electroluminescent material. In color displays, a second electroluminescent material is also deposited, the second electroluminescent material emitting light at a different wavelength than the first electroluminescent material. A non-luminescent material, which is preferably an electrical insulator, can be deposited in wells at locations on the display that are not to emit light prior to depositing the conductive material.
摘要翻译：一种用于制造电致发光显示器的方法及其中使用的基板和装置。显示器优选地构造在包括在其一侧具有导电表面的柔性基底层的预构造的基底上。基层对氧和水是不透水的。衬底包括由阻挡层限定的多个阱，每个阱具有与导电表面电连接的电极层。覆盖井的可移除的保护层在用于制造显示器之前保护电极层免受氧气和水的侵害。在一个实施例中，每个阱还包含与电极层接触的电子转移层。电子转移层包括提高从电极层向显示器的电致发光层注入电子的效率的材料。通过相对于衬底移动第一分配器来制造该显示器，以便在衬底上定量沉积第一电致发光材料，响应于限定照明图案的信号，不同量的第一电致发光材料沉积在衬底上的不同位置由显示器生成。导电材料沉积在第一电致发光材料上。在彩色显示器中，还沉积第二电致发光材料，第二电致发光材料以与第一电致发光材料不同的波长发射光。优选为电绝缘体的非发光材料可以沉积在显示器上的在沉积导电材料之前不发光的位置的孔中。

4. 发明授权

US06713955B1 Organic light emitting device having a current self-limiting structure 有权
标题翻译：具有电流自限制结构的有机发光器件
公开(公告)号：US06713955B1
公开(公告)日：2004-03-30
申请号：US09197012
申请日：1998-11-20
申请人： Daniel B. Roitman , Ronald L. Moon , Homer Antoniadis , James R. Sheats
发明人： Daniel B. Roitman , Ronald L. Moon , Homer Antoniadis , James R. Sheats
IPC分类号： H05B3302
CPC分类号： H01L51/5203 , H01L51/50 , H01L2251/5392 , H01L2251/568
摘要： An organic light emitting device having a process compatible current self-limiting (CSL) structure applied in the vicinity of an electrode of the device prevents the occurrence of high current flow in the vicinity of a short within the device. Should a short occur, the CSL structure becomes resistive, or non-conducting in the vicinity of the short, thus preventing the occurrence of “runaway” current in the vicinity of the short. By limiting the current flow between conductors in the device, the non-emissive areas of the device can be minimized, thus improving the overall reliability of the device.
摘要翻译：具有应用于器件电极附近的工艺兼容电流自限制（CSL）结构的有机发光器件防止在器件内的短路附近发生高电流流动。如果发生短路，则CSL结构在短路附近变成电阻或不导通，从而防止在短路附近发生“失控”电流。通过限制器件中的导体之间的电流流动，器件的非发射区域可以最小化，从而提高器件的整体可靠性。

5. 发明申请

US20120012877A1 Quantum Dot White and Colored Light-Emitting Devices 有权
标题翻译：量子点白色和彩色发光器件
公开(公告)号：US20120012877A1
公开(公告)日：2012-01-19
申请号：US13208169
申请日：2011-08-11
申请人： Moungi G. Bawendi , Jason Heine , Klavs F. Jensen , Jeffrey N. Miller , Ronald L. Moon
发明人： Moungi G. Bawendi , Jason Heine , Klavs F. Jensen , Jeffrey N. Miller , Ronald L. Moon
IPC分类号： H01L33/50 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/06 , B82Y10/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/502 , H01L33/504 , H01S3/169 , Y02B20/181 , Y10S977/95
摘要： A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
摘要翻译：一种发光装置，包括嵌入在主矩阵中的量子点群（QD）和导致QD发出二次光的初级光源以及制造这种器件的方法。选择量子点的尺寸分布以允许从其发射特定颜色的光。从装置发射的光可以是纯（单色）或混合（多色）颜色，并且可以仅由QDs本身发出的光或者从QD发出的光的混合物和发射的光从主要来源。 QD理想地由诸如CdSe的未掺杂的半导体组成，并且可以任选地被涂覆以增加光致发光。

6. 发明授权

US4157556A Heterojunction confinement field effect transistor 失效
标题翻译：异质结约束场效应晶体管
公开(公告)号：US4157556A
公开(公告)日：1979-06-05
申请号：US757258
申请日：1977-01-06
申请人： David R. Decker , Ronald L. Moon
发明人： David R. Decker , Ronald L. Moon
IPC分类号： H01L29/10 , H01L29/205 , H01L29/812 , H01L29/80
CPC分类号： H01L29/812 , H01L29/1075 , H01L29/205
摘要： An improved field-effect transistor is provided by forming the conducting channel boundary opposite the gate electrode as a heterojunction. For example a GaAs conducting channel may be bounded by an AlGaAs layer. The conduction electrons can penetrate the boundary very little and are constrained to the channel layer having good transport properties. The output conductance is reduced and the transconductance increased.
摘要翻译：通过形成与栅极相对的导电通道边界作为异质结来提供改进的场效应晶体管。例如，GaAs导电沟道可以由AlGaAs层限制。传导电子可以很少地穿透边界，并被约束到具有良好传输特性的沟道层。输出电导减少，跨导增加。

7. 发明授权

US08362684B2 Quantum dot white and colored light-emitting devices 有权
标题翻译：量子点白色和彩色发光装置
公开(公告)号：US08362684B2
公开(公告)日：2013-01-29
申请号：US13465553
申请日：2012-05-07
申请人： Moungi G. Bawendi , Jason Heine , Klavs F. Jensen , Jeffrey N. Miller , Ronald L. Moon
发明人： Moungi G. Bawendi , Jason Heine , Klavs F. Jensen , Jeffrey N. Miller , Ronald L. Moon
IPC分类号： H01L51/00
CPC分类号： H01L33/06 , B82Y10/00 , C09K11/02 , C09K11/565 , C09K11/883 , H01L33/502 , H01L33/504 , H01S3/169 , Y02B20/181 , Y10S977/95
摘要： A light-emitting device comprising a population of quantum dots (QDs) embedded in a host matrix and a primary light source which causes the QDs to emit secondary light and a method of making such a device. The size distribution of the QDs is chosen to allow light of a particular color to be emitted therefrom. The light emitted from the device may be of either a pure (monochromatic) color, or a mixed (polychromatic) color, and may consist solely of light emitted from the QDs themselves, or of a mixture of light emitted from the QDs and light emitted from the primary source. The QDs desirably are composed of an undoped semiconductor such as CdSe, and may optionally be overcoated to increase photoluminescence.
摘要翻译：一种发光装置，包括嵌入在主矩阵中的量子点群（QD）和导致QD发出二次光的初级光源以及制造这种器件的方法。选择量子点的尺寸分布以允许从其发射特定颜色的光。从装置发射的光可以是纯（单色）或混合（多色）颜色，并且可以仅由QDs本身发出的光或者从QD发出的光的混合物和发射的光从主要来源。 QD理想地由诸如CdSe的未掺杂的半导体组成，并且可以任选地被涂覆以增加光致发光。

8. 发明授权

US4246050A Lattice constant grading in the Al.sub.y Ca.sub.1-y As.sub.1-x Sb.sub.x alloy system 失效
标题翻译： AlyCa1-yAs1-xSbxalloy系统中的晶格常数分级
公开(公告)号：US4246050A
公开(公告)日：1981-01-20
申请号：US59705
申请日：1979-07-23
申请人： Ronald L. Moon
发明人： Ronald L. Moon
IPC分类号： H01L21/208 , H01L29/205
CPC分类号： H01L29/205 , H01L21/02395 , H01L21/02463 , H01L21/02466 , H01L21/0251 , H01L21/02546 , H01L21/02625 , H01L21/02628 , Y10S438/938
摘要： Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5.mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photovoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of the growing layer.
摘要翻译：采用液相外延法，通过作为分级层的III-V合金体系AlGaAsSb的组成中间体，在GaAs衬底上生长GaAsSb的晶格匹配层。 Al组分在过渡层的前2.5μm内达到约6％的峰值原子浓度，然后平滑降低至约1％，得到5.74A的晶格常数。在相同的间隔中Sb的平衡浓度平稳增加从0至约9原子百分比以形成表面，在该表面上，对于优化的双结光伏器件的一个结，具有1.1ev的所需能带隙的GaAsSb层。液相外延通过步骤冷却程序完成，由此位错缺陷更均匀地分布在生长层的表面上。

9. 发明授权

US4195305A Lattice constant grading in the Al.sub.y Ga.sub.1-y As.sub.1-x Sb.sub.x alloy system 失效
标题翻译： AlyGa1-yAs1-xSbx合金系统中晶格常数分级
公开(公告)号：US4195305A
公开(公告)日：1980-03-25
申请号：US945653
申请日：1978-09-25
申请人： Ronald L. Moon
发明人： Ronald L. Moon
IPC分类号： H01L21/208 , H01L31/18 , H01L29/16
CPC分类号： H01L31/1844 , H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02466 , H01L21/0251 , H01L21/02546 , H01L21/02549 , H01L21/02625 , H01L21/02628 , Y02E10/544
摘要： Liquid phase epitaxy is employed to grow a lattice matched layer of GaAsSb on GaAs substrates through the compositional intermediary of the III-V alloy system AlGaAsSb which acts as a grading layer. The Al constituent reaches a peak atomic concentration of about 6% within the first 2.5 .mu.m of the transition layer, then decreases smoothly to about 1% to obtain a lattice constant of 5.74 A. In the same interval the equilibrium concentration of Sb smoothly increases from 0 to about 9 atomic percent to form a surface on which a GaAsSb layer having the desired energy bandgap of 1.1 ev for one junction of an optimized dual junction photolvoltaic device. The liquid phase epitaxy is accomplished with a step cooling procedure whereby dislocation defects are more uniformly distributed over the surface of growing layer.
摘要翻译：采用液相外延法，通过作为分级层的III-V合金体系AlGaAsSb的组成中间体，在GaAs衬底上生长GaAsSb的晶格匹配层。 Al组分在过渡层的前2.5μm内达到约6％的峰值原子浓度，然后平滑降低至约1％，得到5.74A的晶格常数。在相同的间隔中Sb的平衡浓度平稳增加从0至约9原子百分比，以形成表面，在该表面上，对于优化的双结光伏器件的一个结，具有所需能带隙为1.1ev的GaAsSb层。液相外延通过步骤冷却程序完成，由此位错缺陷更均匀地分布在生长层的表面上。

10. 发明授权

US4126930A Magnesium doping of AlGaAs 失效
标题翻译： AlGaAs的镁掺杂
公开(公告)号：US4126930A
公开(公告)日：1978-11-28
申请号：US849136
申请日：1977-11-07
申请人： Ronald L. Moon
发明人： Ronald L. Moon
IPC分类号： H01L21/208 , H01L21/22 , H01L31/0304 , H01L31/0693
CPC分类号： H01L31/0693 , H01L21/02395 , H01L21/02546 , H01L21/02579 , H01L21/02625 , H01L21/2205 , H01L31/03042 , Y02E10/544 , Y10S438/912
摘要： Aluminum gallium arsenide is used as a transparent, conducting contact layer on the exposed surface of a gallium arsenide photovoltaic cell. Increased conductivity for the high current generated when concentrated solar radiation strikes the cell, is provided by doping the AlGaAs layer with magnesium. During the formation of the layer, Mg diffuses into the gallium arsenide to form a p-type layer and a p-n junction.
摘要翻译：砷化镓镓用作砷化镓光伏电池的暴露表面上的透明导电接触层。当集中的太阳辐射照射电池时产生的高电流的增加的电导率通过用镁掺杂AlGaAs层来提供。在层的形成期间，Mg扩散到砷化镓中以形成p型层和p-n结。

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