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1. 发明授权

US07906775B2 Superlattice nanopatterning of wires and complex patterns 有权
标题翻译：电线和复杂图案的超晶格纳米图案
公开(公告)号：US07906775B2
公开(公告)日：2011-03-15
申请号：US11633043
申请日：2006-12-04
申请人： James R. Heath , Pierre M. Petroff , Nicholas A. Melosh
发明人： James R. Heath , Pierre M. Petroff , Nicholas A. Melosh
IPC分类号： H01L21/02
CPC分类号： B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , H01L21/0337 , H01L21/76802 , H01L21/76838 , Y10S977/755 , Y10S977/76 , Y10S977/762 , Y10S977/847 , Y10S977/938
摘要： Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and transferring them to a planar substrate. The dimensions and separation of the wires are determined by the thicknesses of alternating layers of different materials that are in the form of a superlattice. Wires are created by evaporating the desired material onto the superlattice that has been selectively etched to provide height contrast between layers. The wires thus formed upon one set of superlattice layers are then transferred to a substrate.
摘要翻译：制造具有纳米宽度和纳米分离距离的金属或非金属线，无需光刻。电线是以两步法制成的，包括以所需尺寸形成电线并将其转移到平面衬底。导线的尺寸和间距由超晶格形式的不同材料的交替层的厚度决定。通过将期望的材料蒸发到已经被选择性蚀刻以提供层之间的高度对比度的超晶格上来产生电线。然后将由此形成在一组超晶格层上的电线转移到基底。

2. 发明授权

US07161168B2 Superlattice nanopatterning of wires and complex patterns 有权
标题翻译：电线和复杂图案的超晶格纳米图案
公开(公告)号：US07161168B2
公开(公告)日：2007-01-09
申请号：US10521714
申请日：2003-07-28
申请人： James R. Heath , Pierre M. Petroff , Nicholas A. Melosh
发明人： James R. Heath , Pierre M. Petroff , Nicholas A. Melosh
IPC分类号： H01L29/06
CPC分类号： B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , H01L21/0337 , H01L21/76802 , H01L21/76838 , Y10S977/755 , Y10S977/76 , Y10S977/762 , Y10S977/847 , Y10S977/938
摘要： Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and transferring them to a planar substrate. The dimensions and separation of the wires are determined by the thicknesses of alternating layers of different materials that are in the form of a superlattice. Wires are created by evaporating the desired material onto the superlattice that has been selectively etched to provide height contrast between layers. The wires thus formed upon one set of superlattice layers are then transferred to a substrate.
摘要翻译：制造具有纳米宽度和纳米分离距离的金属或非金属线，无需光刻。电线是以两步法制成的，包括以所需尺寸形成电线并将其转移到平面衬底。导线的尺寸和间距由超晶格形式的不同材料的交替层的厚度决定。通过将期望的材料蒸发到已经被选择性蚀刻以提供层之间的高度对比度的超晶格上来产生电线。然后将由此形成在一组超晶格层上的电线转移到基底。

3. 发明申请

US20100258785A1 Superlattice nanopatterning of wires and complex patterns 有权
标题翻译：电线和复杂图案的超晶格纳米图案
公开(公告)号：US20100258785A1
公开(公告)日：2010-10-14
申请号：US11633043
申请日：2006-12-04
申请人： James R. Heath , Pierre M. Petroff , Nicholas A. Melosh
发明人： James R. Heath , Pierre M. Petroff , Nicholas A. Melosh
IPC分类号： H01L29/12 , H01L21/02 , H01L21/71
CPC分类号： B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , H01L21/0337 , H01L21/76802 , H01L21/76838 , Y10S977/755 , Y10S977/76 , Y10S977/762 , Y10S977/847 , Y10S977/938
摘要： Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and transferring them to a planar substrate. The dimensions and separation of the wires are determined by the thicknesses of alternating layers of different materials that are in the form of a superlattice. Wires are created by evaporating the desired material onto the superlattice that has been selectively etched to provide height contrast between layers. The wires thus formed upon one set of superlattice layers are then transferred to a substrate.
摘要翻译：制造具有纳米宽度和纳米分离距离的金属或非金属线，无需光刻。电线是以两步法制成的，包括以所需尺寸形成电线并将其转移到平面衬底。导线的尺寸和间距由超晶格形式的不同材料的交替层的厚度决定。通过将期望的材料蒸发到已经被选择性蚀刻以提供层之间的高度对比度的超晶格上来产生电线。然后将由此形成在一组超晶格层上的电线转移到基底。

4. 发明授权

US4591889A Superlattice geometry and devices 失效
标题翻译：超晶格几何和器件
公开(公告)号：US4591889A
公开(公告)日：1986-05-27
申请号：US651044
申请日：1984-09-14
申请人： Arthur C. Gossard , Pierre M. Petroff
发明人： Arthur C. Gossard , Pierre M. Petroff
IPC分类号： H01L29/812 , H01L21/20 , H01L21/203 , H01L21/26 , H01L21/338 , H01L29/06 , H01L29/15 , H01L29/775 , H01L29/778 , H01L29/80 , H01L47/00 , H01S5/00 , H01L27/12
CPC分类号： B82Y10/00 , H01L29/151 , H01L29/158 , H01L29/775
摘要： Semiconductor devices having submonolayer superlattices are described. These devices may have periodic compositional variations in a direction parallel to the substrate surface as well as in the perpendicular direction. Such superlattices are useful in numerous types of devices including lasers, transistors, etc.
摘要翻译：描述具有亚单层超晶格的半导体器件。这些器件可能在平行于衬底表面的方向以及垂直方向上具有周期性的组成变化。这种超晶格在许多类型的器件中是有用的，包括激光器，晶体管等

5. 发明授权

US5192709A Nanoscale modulation doping method 失效
标题翻译：纳米级调制掺杂法
公开(公告)号：US5192709A
公开(公告)日：1993-03-09
申请号：US761308
申请日：1991-09-17
申请人： Pierre M. Petroff
发明人： Pierre M. Petroff
IPC分类号： H01L21/20 , H01L21/265 , H01L21/335
CPC分类号： H01L21/2654 , H01L21/26586 , H01L29/66462 , H01L21/02395 , H01L21/02463 , H01L21/02546
摘要： A method for modulation doping of semiconductor heterostructures includes forming a semiconductor heterostructure comprising a substrate layer, a narrow band-gap quantum well layer, and a donor implantation layer. A focused ion beam writes across the surface of the donor implantation layer, at a maximum angle of incident less than that of the channeling half-angle .alpha. of the donor implantation layer. Channeled dopant ions penetrate deep within the donor implantation layer, far from surface damage sites, and away from the quantum well layer. The addition of a dechanneling layer within the donor implantation layer, and of a series of spacer layers, further localizes the implanted donor ions and separates these ions from the quantum well layer. Once activated by a thermal annealing process, the donor ions release carriers into the quantum well layer where carrier mobility is unimpeded by donor ion collisions. An alternative embodiment implants the donor ions before the heterostructure is completely formed. Another alternative embodiment deposits concentrations of dopant ions partially into the quantum layer, where the ions serve as point defects causing interdiffusion of the donor implantation layer material and that of the quantum well layer. Quantum well regions are formed, separated by interdiffusion regions containing donor ions.
摘要翻译：半导体异质结构的调制掺杂的方法包括形成包括衬底层，窄带隙量子阱层和施主注入层的半导体异质结构。聚焦离子束跨入供体注入层的表面，入射的最大角度小于供体注入层的沟道半角α的入射角。掺杂的掺杂剂离子深入供体植入层内，远离表面损伤位点，远离量子阱层。在供体注入层和一系列间隔层中添加去蜿蜒层，进一步定位植入的施主离子并将这些离子与量子阱层分离。一旦通过热退火工艺激活，供体离子将载体释放到量子阱层中，其中载流子迁移率被供体离子碰撞不受阻碍。替代实施例在异质结构完全形成之前投入供体离子。另一替代实施例将掺杂剂离子的浓度部分地沉积到量子层中，其中离子用作引起供体注入层材料和量子阱层材料相互扩散的点缺陷。形成量子阱区，由包含供体离子的相互扩散区分离。

6. 发明授权

US4205329A Periodic monolayer semiconductor structures grown by molecular beam epitaxy 失效
标题翻译：通过分子束外延生长的周期性单层半导体结构
公开(公告)号：US4205329A
公开(公告)日：1980-05-27
申请号：US852845
申请日：1977-11-18
申请人： Raymond Dingle , Arthur C. Gossard , Pierre M. Petroff , William Wiegmann
发明人： Raymond Dingle , Arthur C. Gossard , Pierre M. Petroff , William Wiegmann
IPC分类号： G21K1/06 , H01L21/203 , H01L27/15 , H01L29/12 , H01L29/15 , H01L33/04 , H01L33/44 , H01S5/34 , H01L29/26
CPC分类号： H01L33/44 , B82Y10/00 , B82Y20/00 , G21K1/062 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02631 , H01L27/15 , H01L29/12 , H01L29/151 , H01L29/155 , H01S5/34 , H01L33/04 , H01S5/3427 , Y10S438/933
摘要： Suitably modified molecular beam epitaxy (MBE) techniques are used to synthesize single crystal, periodic monolayer superlattices of semiconductor alloys on single crystal substrates maintained below a critical growth temperature. Described is the fabrication of periodic structures of (GaAs).sub.n (AlAs).sub.m, where m and n are the number of contiguous monolayers of GaAs and AlAs, respectively, in each period of the structure. As many as 10,000 monolayers were grown in a single structure. Also described is the MBE growth of (Al.sub.x Ga.sub.1-x As).sub.n (Ge.sub.2).sub.m, quasi-superlattice and non-superlattice structures depending on the particular values of n, m and the growth temperature. Waveguides, heterostructure lasers and X-ray reflectors using some of the structures are also described.
摘要翻译：合适改性的分子束外延（MBE）技术用于合成在保持低于临界生长温度的单晶衬底上的半导体合金的单晶，周期性单层超晶格。描述了（GaAs）n（AlAs）m的周期性结构的制造，其中m和n分别是在结构的每个周期中的GaAs和AlAs的连续单层的数量。多达10,000个单层生长在单一结构中。还描述了取决于n，m的特定值和生长温度的（Al x Ga 1-x As）n（Ge 2）m，准超晶格和非超晶格结构的MBE生长。还描述了使用一些结构的波导，异质结构激光器和X射线反射器。

7. 发明授权

US08227825B2 Photonic structures for efficient light extraction and conversion in multi-color light emitting devices 有权
标题翻译：用于多色发光器件中高效光提取和转换的光子结构
公开(公告)号：US08227825B2
公开(公告)日：2012-07-24
申请号：US12845308
申请日：2010-07-28
申请人： Frederic S. Diana , Aurelien J. F. David , Pierre M. Petroff , Claude C. A. Weisbuch
发明人： Frederic S. Diana , Aurelien J. F. David , Pierre M. Petroff , Claude C. A. Weisbuch
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , B82Y20/00 , G02B2006/1213 , H01L33/502 , H01L2933/0083
摘要： A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising secondary emitting species (SES) that are optically-pumped by the light emitted from the PES, and photonic crystals, wherein the photonic crystals act as diffraction gratings to provide high light extraction efficiency, to provide efficient excitation of the SES, and/or to modulate the far-field emission pattern.
摘要翻译：一种高效率的发光二极管（LED），包括衬底，在衬底上生长的缓冲层（如果需要这样的一层），第一有源区包括被电注入的一次发射物质（PES），第二有源区包括由从PES发射的光被光泵浦的二次发射物质（SES）的区域和光子晶体，其中所述光子晶体用作衍射光栅以提供高的光提取效率，以提供SES的有效激发和/ 或调制远场发射模式。

8. 发明申请

US20110291130A1 PHOTONIC STRUCTURES FOR EFFICIENT LIGHT EXTRACTION AND CONVERSION IN MULTI-COLOR LIGHT EMITTING DIODES 审中-公开
标题翻译：在多色发光二极管中有效提取和转换的光电结构
公开(公告)号：US20110291130A1
公开(公告)日：2011-12-01
申请号：US13195279
申请日：2011-08-01
申请人： Frédéric S. Diana , Aurélien J. F. David , Pierre M. Petroff , Claudr C.A. Weisbuch
发明人： Frédéric S. Diana , Aurélien J. F. David , Pierre M. Petroff , Claudr C.A. Weisbuch
IPC分类号： H01L33/58 , H01L33/02
CPC分类号： H01L33/20 , B82Y20/00 , G02B2006/1213 , H01L33/502 , H01L2933/0083
摘要： A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising secondary emitting species (SES) that are optically-pumped by the light emitted from the PES, and photonic crystals, wherein the photonic crystals act as diffraction gratings to provide high light extraction efficiency, to provide efficient excitation of the SES, and/or to modulate the far-field emission pattern.
摘要翻译：一种高效率的发光二极管（LED），包括衬底，在衬底上生长的缓冲层（如果需要这样的一层），第一有源区包括被电注入的一次发射物质（PES），第二有源区包括由从PES发射的光被光泵浦的二次发射物质（SES）的区域和光子晶体，其中所述光子晶体用作衍射光栅以提供高的光提取效率，以提供SES的有效激发和/ 或调制远场发射模式。

9. 发明授权

US06583436B2 Strain-engineered, self-assembled, semiconductor quantum dot lattices 有权
公开(公告)号：US06583436B2
公开(公告)日：2003-06-24
申请号：US09893760
申请日：2001-06-27
申请人： Pierre M. Petroff , James S. Speck , Jo Anna Johnson , Hao Lee
发明人： Pierre M. Petroff , James S. Speck , Jo Anna Johnson , Hao Lee
IPC分类号： H01L2906
CPC分类号： B82Y30/00 , B82Y10/00 , H01L21/02395 , H01L21/0243 , H01L21/02463 , H01L21/02546 , H01L21/02631 , H01L29/127
摘要： A method for growing strain-engineered, self-assembled, semiconductor quantum dots (QDs) into ordered lattices. The nucleation and positioning of QDs into lattices is achieved using a periodic sub-surface lattice built-up on a substrate, stressor layer, and spacer layer. The unit cell dimensions, orientation and the number of QDs in the basis are tunable. Moreover, a 2D lattice can be replicated at periodic intervals along the growth direction to form a three-dimensional (3D) lattice of QDs.

10. 发明授权

US4794440A Heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：US4794440A
公开(公告)日：1988-12-27
申请号：US142316
申请日：1987-12-30
申请人： Federico Capasso , Arthur C. Gossard , John R. Hayes , Roger J. Malik , Pierre M. Petroff
发明人： Federico Capasso , Arthur C. Gossard , John R. Hayes , Roger J. Malik , Pierre M. Petroff
IPC分类号： H01L29/737 , H01L29/72
CPC分类号： H01L29/7371
摘要： A heterojunction bipolar transistor having means for changing carrier transport properties is described.
摘要翻译：描述了具有用于改变载流子传输特性的装置的异质结双极晶体管。

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