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1. 发明申请

US20050205517A1 Method for making a micro-fluid ejection device 有权
标题翻译：制造微流体喷射装置的方法
公开(公告)号：US20050205517A1
公开(公告)日：2005-09-22
申请号：US10941404
申请日：2004-09-15
申请人： John Krawczyk , James Mrvos , Girish Patil , Jason Vanderpool , Brian Hart , Christopher Money , Jeanne Singh , Karthik Vaideeswaran
发明人： John Krawczyk , James Mrvos , Girish Patil , Jason Vanderpool , Brian Hart , Christopher Money , Jeanne Singh , Karthik Vaideeswaran
IPC分类号： B41J2/16 , B41J2/05 , B44C1/22 , G11B5/127 , H01L21/302
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B81B2201/052 , B81C1/00531
摘要： A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
摘要翻译：蚀刻半导体衬底的方法。该方法包括以下步骤：将光致抗蚀剂蚀刻掩模层施加到衬底的器件表面。光刻胶蚀刻掩模的选择第一区被掩蔽，成像和显影。照射光致抗蚀剂蚀刻掩模层的选择的第二区域以辅助蚀刻掩模层从选择的第二区域的后蚀刻剥离。蚀刻基板以形成通过基板的厚度的流体供给槽。至少蚀刻掩模层的选择第二区域从衬底去除，由此从蚀刻掩模层的选择的第二区域形成的掩模层残留物显着减少。

2. 发明申请

US20070004215A1 Dry etching methods 有权
标题翻译：干蚀刻方法
公开(公告)号：US20070004215A1
公开(公告)日：2007-01-04
申请号：US11173395
申请日：2005-07-01
申请人： James Mrvos , Girish Patil
发明人： James Mrvos , Girish Patil
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B81C1/00531 , B81C2201/0132 , H01J37/321 , H01L21/30655 , H01L21/3081
摘要： A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (referred to collectively as “slots”) in the substrates. The process includes applying a first layer to a first surface of substrate to provide an etch mask material layer on the first surface of the substrate. A second layer is applied to a second surface of the substrate to provide an etch stop material layer on the second surface of the substrate. The first layer and the second layer have similar solubilities in one or more organic solvents. The substrate is etched from the first surface of the wafers to provide a slot in the substrate. After etching the substrate, the etch mask material layer and the etch stop material layer are removed by contacting the first surface and the second surface of the substrate with a single organic solvent.
摘要翻译：使用深反应离子蚀刻工艺蚀刻半导体衬底以在衬底中产生通孔或槽（统称为“槽”）的工艺。该方法包括将第一层施加到衬底的第一表面以在衬底的第一表面上提供蚀刻掩模材料层。将第二层施加到衬底的第二表面，以在衬底的第二表面上提供蚀刻停止材料层。第一层和第二层在一种或多种有机溶剂中具有相似的溶解度。从晶片的第一表面蚀刻衬底以在衬底中提供槽。在蚀刻基板之后，通过用单一有机溶剂接触基板的第一表面和第二表面来去除蚀刻掩模材料层和蚀刻停止材料层。

3. 发明申请

US20060111477A1 Radiation curable compositions having improved flexibility 有权
标题翻译：具有改善柔性的可辐射固化组合物
公开(公告)号：US20060111477A1
公开(公告)日：2006-05-25
申请号：US10995806
申请日：2004-11-23
申请人： James Mrvos , Girish Patil , Karthik Vaideeswaran
发明人： James Mrvos , Girish Patil , Karthik Vaideeswaran
IPC分类号： C08L63/00 , C08G67/02
CPC分类号： C08G59/68 , B41J2/1603 , B41J2/1637 , C08L63/00 , G03F7/038
摘要： A radiation curable resin composition having improved flexibility. The radiation curable composition having from about 5 to about 50 weight percent of a difunctional polymeric compound; from about 1 to about 10 weight percent of a photoinitiator; from about 1 to about 10 weight percent of a flexibilizer agent, wherein the flexibilizer agent has a molecular weight ranging from about 400 to about 10,000; and about 30 to about 90 weight percent of the non-photoreactive solvent, wherein the weight percents are based on the total weight of the resin composition. Ink jet print heads and ink jet printing apparatusess comprising ink jet print heads utilizing the radiation curable resin compositions are also included.
摘要翻译：一种具有改善柔性的辐射固化树脂组合物。所述可辐射固化组合物具有约5至约50重量％的双官能聚合物; 约1至约10重量％的光引发剂; 约1至约10重量％的增韧剂，其中所述增韧剂的分子量范围为约400至约10,000; 和约30至约90重量％的非光反应性溶剂，其中重量百分比基于树脂组合物的总重量。还包括使用该辐射固化树脂组合物的喷墨打印头和喷墨打印设备，包括喷墨打印头。

4. 发明申请

US20060077221A1 Microfluidic substrates having improved fluidic channels 有权
标题翻译：具有改进的流体通道的微流体基底
公开(公告)号：US20060077221A1
公开(公告)日：2006-04-13
申请号：US11281090
申请日：2005-11-17
申请人： Karthik Vaideeswaran , Andrew McNees , John Krawczyk , James Mrvos , Cory Hammond , Mark Doerre , Jason Vanderpool , Girish Patil , Christopher Money , Gary Williams , Richard Warner
发明人： Karthik Vaideeswaran , Andrew McNees , John Krawczyk , James Mrvos , Cory Hammond , Mark Doerre , Jason Vanderpool , Girish Patil , Christopher Money , Gary Williams , Richard Warner
IPC分类号： B41J2/015
CPC分类号： B41J2/1632 , B41J2/14145 , B41J2/1603 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B41J2/1646
摘要： A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.
摘要翻译：一种用于改善其中具有通孔或槽的微流体装置的流体流动的方法。该方法包括以下步骤：使用反应离子蚀刻工艺从基板的第一表面至相对的第二表面形成穿过衬底的至少一部分厚度的一个或多个开口，由此将蚀刻停止层施加到一个侧壁表面或者在交替蚀刻和钝化步骤期间，当开口被蚀刻通过衬底的至少一部分时，可以有更多的开口。通过使用选自化学处理和机械处理的方法处理侧壁表面，从侧壁表面去除基本上所有的蚀刻停止层涂层，由此所处理的侧壁表面的表面能相对于所述侧壁表面包含所述蚀刻停止层涂层。

5. 发明申请

US20050093912A1 Methods for improving flow through fluidic channels 有权
标题翻译：改善通过流体通道流动的方法
公开(公告)号：US20050093912A1
公开(公告)日：2005-05-05
申请号：US10701225
申请日：2003-11-04
申请人： Karthik Vaideeswaran , Andrew McNees , John Krawczyk , James Mrvos , Cory Hammond , Mark Doerre , Jason Vanderpool , Girish Patil , Christopher Money , Gary Williams , Richard Warner
发明人： Karthik Vaideeswaran , Andrew McNees , John Krawczyk , James Mrvos , Cory Hammond , Mark Doerre , Jason Vanderpool , Girish Patil , Christopher Money , Gary Williams , Richard Warner
IPC分类号： B41J2/14 , B41J2/16 , B41J2/015
CPC分类号： B41J2/1632 , B41J2/14145 , B41J2/1603 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B41J2/1646
摘要： A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.
摘要翻译：一种用于改善其中具有通孔或槽的微流体装置的流体流动的方法。该方法包括以下步骤：使用反应离子蚀刻工艺从基板的第一表面至相对的第二表面形成穿过衬底的至少一部分厚度的一个或多个开口，由此将蚀刻停止层施加到一个侧壁表面或者在交替蚀刻和钝化步骤期间，当开口被蚀刻通过衬底的至少一部分时，可以有更多的开口。通过使用选自化学处理和机械处理的方法处理侧壁表面，从侧壁表面去除基本上所有的蚀刻停止层涂层，由此所处理的侧壁表面的表面能相对于所述侧壁表面包含所述蚀刻停止层涂层。

6. 发明申请

US20070259292A1 METHOD FOR MAKING A MICRO-FLUID EJECTION DEVICE 有权
标题翻译：制造微流体喷射装置的方法
公开(公告)号：US20070259292A1
公开(公告)日：2007-11-08
申请号：US11780234
申请日：2007-07-19
申请人： John Krawczyk , James Mrvos , Girish Patil , Jason Vanderpool , Brian Hart , Christopher Money , Jeanne Singh , Karthik Vaideeswaran
发明人： John Krawczyk , James Mrvos , Girish Patil , Jason Vanderpool , Brian Hart , Christopher Money , Jeanne Singh , Karthik Vaideeswaran
IPC分类号： G03C5/00 , H01L21/461 , H01L21/302
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1631 , B41J2/1645 , B81B2201/052 , B81C1/00531
摘要： A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
摘要翻译：蚀刻半导体衬底的方法。该方法包括以下步骤：将光致抗蚀剂蚀刻掩模层施加到衬底的器件表面。光刻胶蚀刻掩模的选择第一区被掩蔽，成像和显影。照射光致抗蚀剂蚀刻掩模层的选择的第二区域以辅助蚀刻掩模层从选择的第二区域的后蚀刻剥离。蚀刻基板以形成通过基板的厚度的流体供给槽。至少蚀刻掩模层的选择第二区域从衬底去除，由此从蚀刻掩模层的选择的第二区域形成的掩模层残留物显着减少。

7. 发明申请

US20060055723A1 Planarization layer for micro-fluid ejection head substrates 有权
标题翻译：用于微流体喷射头基板的平面化层
公开(公告)号：US20060055723A1
公开(公告)日：2006-03-16
申请号：US10941493
申请日：2004-09-15
申请人： Byron Bell , Craig Bertelsen , Brian Hart , Girish Patil , Sean Weaver
发明人： Byron Bell , Craig Bertelsen , Brian Hart , Girish Patil , Sean Weaver
IPC分类号： B41J2/015
CPC分类号： B41J2/14129 , B41J2/1603 , B41J2/1631
摘要： A substantially inorganic planarization layer for a micro-fluid ejection head substrate and method therefor. The planarization layer includes a plurality of layers composed of one or more dielectric compounds and at least one spin on glass (SOG) layer having a total thickness ranging from about 1 microns to about 15 microns deposited over a second metal layer of the micro-fluid ejection head substrate. A top most layer of the planarization layer is selected from one or more of the dielectric compounds and a hard mask material.
摘要翻译：一种用于微流体喷射头基板的基本上无机的平坦化层及其方法。平坦化层包括由一个或多个电介质化合物组成的多个层和沉积在微流体的第二金属层上的总厚度为约1微米至约15微米的至少一个旋涂玻璃（SOG）层喷射头基板。平坦化层的最上层选自一种或多种介电化合物和硬掩模材料。

8. 发明申请

US20060221115A1 Methods for bonding radiation curable compositions to a substrate 审中-公开
标题翻译：将可辐射固化组合物粘合到基底上的方法
公开(公告)号：US20060221115A1
公开(公告)日：2006-10-05
申请号：US11095694
申请日：2005-04-01
申请人： Girish Patil
发明人： Girish Patil
IPC分类号： B32B37/00
CPC分类号： B41J2/1631 , B41J2/1603 , B41J2/1623
摘要： A method for improving adhesion of a radiation curable layer to a semiconductor chip utilizing a silane adhesion promoter, without crosslinking the silane adhesion promoter prior to application of the radiation curable layer onto the surface of the semiconductor chip.
摘要翻译：在将可辐射固化层施加到半导体芯片的表面之前，利用硅烷粘合促进剂改善可辐射固化层与半导体芯片的粘附性，而不使硅烷粘附促进剂交联的方法。

9. 发明申请

US20070222820A1 MICRO-FLUID EJECTION HEAD STRUCTURE 有权
标题翻译：微流体喷射头结构
公开(公告)号：US20070222820A1
公开(公告)日：2007-09-27
申请号：US11754715
申请日：2007-05-29
申请人： Johnathan Barnes , Craig Bertelsen , Brian Hart , Gary Williams , Sean Weaver , Girish Patil
发明人： Johnathan Barnes , Craig Bertelsen , Brian Hart , Gary Williams , Sean Weaver , Girish Patil
IPC分类号： B41J2/04
CPC分类号： B41J2/1628 , B41J2/14024 , B41J2/1404 , B41J2/14072 , B41J2/1603 , B41J2/1623 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1634 , B41J2/1635 , B41J2/1639 , B41J2/1645 , Y10T29/49135 , Y10T29/49139 , Y10T29/4914 , Y10T29/49401 , Y10T29/4979 , Y10T29/49798
摘要： A method of making a micro-fluid ejection head structure for a micro-fluid ejection device. The method includes applying a removable mandrel material to a semiconductor substrate wafer containing fluid ejection actuators on a device surface thereof. The mandrel material is shaped to provide fluid chamber and fluid channel locations on the substrate wafer. A micro machinable material is applied to the shaped mandrel and the device surface of the wafer to provide a nozzle plate and flow feature layer on the shaped mandrel and wafer. A plurality of nozzle holes are formed in the nozzle plate and flow feature layer. The shaped mandrel material is then removed from the device surface of the substrate wafer to provide fluid chambers and fluid channels in the nozzle plate and flow feature layer.
摘要翻译：一种制造用于微流体喷射装置的微流体喷射头结构的方法。该方法包括将可移除的心轴材料施加到在其装置表面上含有流体喷射致动器的半导体衬底晶片。心轴材料成型为在衬底晶片上提供流体室和流体通道位置。将微加工材料施加到成形心轴和晶片的装置表面，以在成形心轴和晶片上提供喷嘴板和流动特征层。在喷嘴板和流动特征层中形成多个喷嘴孔。然后将成形的心轴材料从衬底晶片的器件表面移除，以在喷嘴板和流动特征层中提供流体室和流体通道。

10. 发明申请

US20070076059A1 Thick film layers and methods relating thereto 有权
标题翻译：厚膜层及其相关方法
公开(公告)号：US20070076059A1
公开(公告)日：2007-04-05
申请号：US11361731
申请日：2006-02-24
申请人： Girish Patil , Sean Weaver , Rich Wells
发明人： Girish Patil , Sean Weaver , Rich Wells
IPC分类号： B41J2/05
CPC分类号： B41J2/1603 , B41J2/1631 , B41J2/1645
摘要： Thick film layers for a micro-fluid ejection head, micro-fluid ejection heads, and methods for making micro-fluid ejection head and thick film layers. One such thick film layer is derived from a difunctional epoxy component having a weight average molecular weight ranging from about 2500 to about 4000 Daltons, a photoacid generator, an aryl ketone solvent, and an adhesion enhancing component. One such thick film layer has a cross-link density upon curing that increases the dimensional stability of the thick film layer sufficient to provide flow features therein having substantially vertical walls.
摘要翻译：用于微流体喷射头，微流体喷射头和用于制造微流体喷射头和厚膜层的方法的厚膜层。一种这样的厚膜层衍生自重均分子量为约2500至约4000道尔顿的双官能环氧组分，光酸产生剂，芳基酮溶剂和粘合增强组分。一个这样的厚膜层在固化时具有交联密度，增加了厚膜层的尺寸稳定性，足以提供具有基本上垂直壁的流动特征。

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