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1. 发明申请

US20160031711A1 GROWTH OF GRAPHENE FILMS FROM NON-GASEOUS CARBON SOURCES 审中-公开
标题翻译：来自非碳源碳源的石墨膜的生长
公开(公告)号：US20160031711A1
公开(公告)日：2016-02-04
申请号：US14754983
申请日：2015-06-30
申请人： James M. Tour , Zhengzong Sun , Zheng Yan , Gedeng Ruan , Zhiwei Peng
发明人： James M. Tour , Zhengzong Sun , Zheng Yan , Gedeng Ruan , Zhiwei Peng
IPC分类号： C01B31/04
CPC分类号： C01B32/194 , C01B32/184 , C01B2204/02 , C01B2204/04
摘要： In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.
摘要翻译：在各种实施方案中，本公开提供了通过以下步骤形成石墨烯膜的方法：（1）将非气态碳源沉积在催化剂表面上; （2）将非气态碳源以流量暴露于至少一种气体; 和（3）开始将非气态碳源转化为石墨烯膜，其中石墨烯膜的厚度可由气体流速控制。本公开的另外的实施方案涉及根据本公开的方法制备的石墨烯膜。

2. 发明申请

US20140234200A1 GROWTH OF GRAPHENE FILMS FROM NON-GASEOUS CARBON SOURCES 有权
标题翻译：来自非碳源碳源的石墨膜的生长
公开(公告)号：US20140234200A1
公开(公告)日：2014-08-21
申请号：US13561889
申请日：2012-07-30
申请人： James Tour , Zhengzong Sun , Zheng Yan , Gedeng Ruan , Zhiwei Peng
发明人： James Tour , Zhengzong Sun , Zheng Yan , Gedeng Ruan , Zhiwei Peng
IPC分类号： C01B31/04 , C01B31/00
CPC分类号： C01B31/0446 , C01B32/184 , C01B32/194 , C01B2204/02 , C01B2204/04
摘要： In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.
摘要翻译：在各种实施方案中，本公开提供了通过以下步骤形成石墨烯膜的方法：（1）将非气态碳源沉积在催化剂表面上; （2）将非气态碳源以流量暴露于至少一种气体; 和（3）开始将非气态碳源转化为石墨烯膜，其中石墨烯膜的厚度可由气体流速控制。本公开的另外的实施方案涉及根据本公开的方法制备的石墨烯膜。

3. 发明授权

US09096437B2 Growth of graphene films from non-gaseous carbon sources 有权
标题翻译：来自非气态碳源的石墨烯薄膜的生长
公开(公告)号：US09096437B2
公开(公告)日：2015-08-04
申请号：US13561889
申请日：2012-07-30
申请人： James Tour , Zhengzong Sun , Zheng Yan , Gedeng Ruan , Zhiwei Peng
发明人： James Tour , Zhengzong Sun , Zheng Yan , Gedeng Ruan , Zhiwei Peng
IPC分类号： C01B31/04 , C01B31/00
CPC分类号： C01B31/0446 , C01B32/184 , C01B32/194 , C01B2204/02 , C01B2204/04
摘要： In various embodiments, the present disclosure provides methods of forming graphene films by: (1) depositing a non-gaseous carbon source onto a catalyst surface; (2) exposing the non-gaseous carbon source to at least one gas with a flow rate; and (3) initiating the conversion of the non-gaseous carbon source to the graphene film, where the thickness of the graphene film is controllable by the gas flow rate. Additional embodiments of the present disclosure pertain to graphene films made in accordance with the methods of the present disclosure.
摘要翻译：在各种实施方案中，本公开提供了通过以下步骤形成石墨烯膜的方法：（1）将非气态碳源沉积在催化剂表面上; （2）将非气态碳源以流量暴露于至少一种气体; 和（3）开始将非气态碳源转化为石墨烯膜，其中石墨烯膜的厚度可由气体流速控制。本公开的另外的实施方案涉及根据本公开的方法制备的石墨烯膜。

4. 发明申请

US20140120270A1 DIRECT GROWTH OF GRAPHENE FILMS ON NON-CATALYST SURFACES 审中-公开
标题翻译：石墨膜直接生长在非催化表面
公开(公告)号：US20140120270A1
公开(公告)日：2014-05-01
申请号：US14113856
申请日：2011-09-09
申请人： James M. Tour , Zheng Yan , Zhiwei Peng , Zhengzong Sun
发明人： James M. Tour , Zheng Yan , Zhiwei Peng , Zhengzong Sun
IPC分类号： C01B31/04
CPC分类号： C01B32/184 , B01J23/755 , B82Y30/00 , B82Y40/00 , C01B32/186 , C23C16/26 , H01L21/02115 , H01L21/02263
摘要： The present invention provides methods of forming graphene films on various non-catalyst surfaces by applying a carbon source and a catalyst to the surface and initiating graphene film formation. In some embodiments, graphene film formation may be initiated by induction heating. In some embodiments, the carbon source is applied to the non-catalyst surface before the catalyst is applied to the surface. In other embodiments, the catalyst is applied to the non-catalyst surface before the carbon source is applied to the surface. In further embodiments, the catalyst and the carbon source are applied to the non-catalyst surface at the same time. Further embodiments of the present invention may also include a step of separating the catalyst from the formed graphene film, such as by acid etching.
摘要翻译：本发明提供了在各种非催化剂表面上形成石墨烯薄膜的方法，该方法是通过将碳源和催化剂施加在表面上并引发石墨烯薄膜形成。在一些实施例中，可以通过感应加热来开始石墨烯膜的形成。在一些实施方案中，在将催化剂施加到表面之前将碳源施加到非催化剂表面。在其它实施方案中，在将碳源施加到表面之前，将催化剂施加到非催化剂表面。在另外的实施方案中，催化剂和碳源同时被施加到非催化剂表面。本发明的其它实施方案还可以包括例如通过酸蚀刻从形成的石墨烯膜分离催化剂的步骤。

5. 发明申请

US20140178688A1 BERNAL-STACKED GRAPHENE LAYERS AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：伯氏堆积石墨层及其制造方法
公开(公告)号：US20140178688A1
公开(公告)日：2014-06-26
申请号：US14104588
申请日：2013-12-12
申请人： James M. Tour , Zhengzong Sun , Abdul-Rahman O. Raji
发明人： James M. Tour , Zhengzong Sun , Abdul-Rahman O. Raji
IPC分类号： C01B31/04
CPC分类号： C01B32/186 , C01B2204/04 , Y10T156/10 , Y10T428/30
摘要： In some embodiments, the present disclosure pertains to methods of controllably forming Bernal-stacked graphene layers. In some embodiments, the methods comprise: (1) cleaning a surface of a catalyst; (2) annealing the surface of the catalyst; (3) applying a carbon source onto the cleaned and annealed surface of the catalyst in a reaction chamber; and (4) growing the Bernal-stacked graphene layers on the surface of the catalyst in the reaction chamber, where the number of formed Bernal-stacked graphene layers is controllable as a function of one or more growth parameters. Further embodiments of the present disclosure also include steps of: (5) terminating the growing step; and (6) transferring the formed Bernal-stacked graphene layers from the surface of the catalyst onto a substrate. Further embodiments of the present disclosure pertain to graphene films formed by the methods of the present disclosure.
摘要翻译：在一些实施例中，本公开涉及可控地形成伯纳尔堆叠的石墨烯层的方法。在一些实施方案中，所述方法包括：（1）清洁催化剂的表面; （2）催化剂表面退火; （3）在反应室中将催化剂的清洁和退火的表面上施加碳源; 和（4）在反应室中的催化剂表面上生长Bernal层叠的石墨烯层，其中形成的Bernal堆叠的石墨烯层的数量作为一个或多个生长参数的函数是可控的。本公开的另外的实施例还包括以下步骤：（5）终止生长步骤; 和（6）将形成的Bernal层叠的石墨烯层从催化剂的表面转移到基底上。本公开的另外的实施方案涉及通过本公开的方法形成的石墨烯膜。

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