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1. 发明授权

US07852697B2 Integrated circuit feature definition using one-time-programmable (OTP) memory 有权
标题翻译：使用一次可编程（OTP）存储器的集成电路特性定义
公开(公告)号：US07852697B2
公开(公告)日：2010-12-14
申请号：US12372196
申请日：2009-02-17
申请人： James L. Archibald , Kang W. Lee , Clinton H. Holder, Jr. , Edwin A. Muth , Kreg D. Ulery
发明人： James L. Archibald , Kang W. Lee , Clinton H. Holder, Jr. , Edwin A. Muth , Kreg D. Ulery
IPC分类号： G11C17/18
CPC分类号： H03K19/1731
摘要： In one embodiment, a integrated circuit (IC) configurable to have any one of a plurality of different feature sets, the IC including (a) one or more feature blocks adapted to be independently enabled or disabled, (b) a one-time-programmable (OTP) memory cell for each feature block, the OTP memory cell storing a value, and (c) a feature control module for each feature block, each feature control module connected between the corresponding OTP memory cell and the corresponding feature block, and adapted to enable or disable the corresponding feature block based on the value stored in the corresponding OTP memory cell. The OTP memory cells are programmed by a vendor to select the particular feature set for the IC which is to be available to a purchaser.
摘要翻译：在一个实施例中，集成电路（IC）可配置为具有多个不同特征集合中的任何一个，所述IC包括（a）一个或多个适于被独立启用或禁用的特征块，（b）每个特征块的可编程（OTP）存储单元，OTP存储单元存储一个值，以及（c）每个特征块的特征控制模块，每个特征控制模块连接在相应的OTP存储单元和对应的特征块之间，以及适于基于存储在相应的OTP存储单元中的值来启用或禁用对应的特征块。 OTP存储器单元由供应商编程以选择用于购买者可用的IC的特定功能集。

2. 发明授权

US07512028B2 Integrated circuit feature definition using one-time-programmable (OTP) memory 有权
标题翻译：使用一次可编程（OTP）存储器的集成电路特性定义
公开(公告)号：US07512028B2
公开(公告)日：2009-03-31
申请号：US11736208
申请日：2007-04-17
申请人： James L. Archibald , Clinton H. Holder, Jr. , Kang W. Lee , Edwin A. Muth , Kreg D. Ulery
发明人： James L. Archibald , Clinton H. Holder, Jr. , Kang W. Lee , Edwin A. Muth , Kreg D. Ulery
IPC分类号： G11C17/18
CPC分类号： H03K19/1731
摘要： In one embodiment, a integrated circuit (IC) configurable to have any one of a plurality of different feature sets, the IC including (a) one or more feature blocks adapted to be independently enabled or disabled, (b) a one-time-programmable (OTP) memory cell for each feature block, the OTP memory cell storing a value, and (c) a feature control module for each feature block, each feature control module connected between the corresponding OTP memory cell and the corresponding feature block, and adapted to enable or disable the corresponding feature block based on the value stored in the corresponding OTP memory cell. The OTP memory cells are programmed by a vendor to select the particular feature set for the IC which is to be available to a purchaser.
摘要翻译：在一个实施例中，集成电路（IC）可配置为具有多个不同特征集合中的任何一个，所述IC包括（a）一个或多个适于被独立启用或禁用的特征块，（b）每个特征块的可编程（OTP）存储单元，OTP存储单元存储一个值，以及（c）每个特征块的特征控制模块，每个特征控制模块连接在相应的OTP存储单元和对应的特征块之间，以及适于基于存储在相应的OTP存储单元中的值来启用或禁用对应的特征块。 OTP存储器单元由供应商编程以选择用于购买者可用的IC的特定功能集。

3. 发明授权

US07626845B2 Voltage programming switch for one-time-programmable (OTP) memories 有权
标题翻译：用于一次可编程（OTP）存储器的电压编程开关
公开(公告)号：US07626845B2
公开(公告)日：2009-12-01
申请号：US11610284
申请日：2006-12-13
申请人： Clinton H. Holder, Jr. , Kang W. Lee , Joseph E. Simko , Yehuda Smooha , Ying Zhu
发明人： Clinton H. Holder, Jr. , Kang W. Lee , Joseph E. Simko , Yehuda Smooha , Ying Zhu
IPC分类号： G11C17/00
CPC分类号： G11C17/16 , G11C17/18
摘要： In one embodiment, the invention is an integrated circuit (IC) including an OTP memory and conditioning circuitry. The IC receives an externally-generated DC programming voltage signal that the conditioning circuitry transforms into a programming pulse signal for programming the OTP memory. The conditioning circuitry includes: (i) reset protection circuitry for holding the programming pulse signal low if the IC is powering up, (ii) an overvoltage protection circuit for substantially preventing the programming pulse voltage from exceeding predefined boundaries, and (iii) a conversion switch for controlling the programming pulse voltage. The programming pulse voltage is (i) substantially equivalent to the externally-generated DC voltage if an enable signal is on, and (ii) substantially equivalent to a reference voltage if the enable signal is off.
摘要翻译：在一个实施例中，本发明是包括OTP存储器和调节电路的集成电路（IC）。 IC接收外部产生的直流编程电压信号，调理电路变换为用于编程OTP存储器的编程脉冲信号。调节电路包括：（i）复位保护电路，用于在IC上电时保持编程脉冲信号为低电平，（ii）过压保护电路，用于基本上防止编程脉冲电压超出预定义的边界，以及（iii）转换用于控制编程脉冲电压的开关。如果使能信号为开，编程脉冲电压为（i）基本上等于外部产生的直流电压，以及（ii）如果使能信号关闭，则基本上等于参考电压。

4. 发明授权

US4649523A Semiconductor memory with boosted word line 失效
标题翻译：具有增强字线的半导体存储器
公开(公告)号：US4649523A
公开(公告)日：1987-03-10
申请号：US699661
申请日：1985-02-08
申请人： Clinton H. Holder, Jr. , Howard C. Kirsch , James H. Stefany
发明人： Clinton H. Holder, Jr. , Howard C. Kirsch , James H. Stefany
IPC分类号： G11C11/407 , G11C8/08 , G11C11/408 , G11C7/00
CPC分类号： G11C11/4085 , G11C8/08
摘要： A dynamic random access memory has a row conductor boosted in excess of the power supply level during an initial portion of a memory cycle. The voltage is then clamped at the supply level during the middle portion of the cycle, and optionally boosted again during the refresh portion. This allows improved performance and reliability, especially in memories employing bit lines precharged to one-half the power supply level.
摘要翻译：动态随机存取存储器在存储器周期的初始部分期间具有超过电源电平的行导体。然后在循环的中间部分期间将电压钳位在电源电平处，并且可选地在刷新部分期间增强电压。这允许改进的性能和可靠性，特别是在采用预充电到电源电量一半的位线的存储器中。

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