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1. 发明授权

US08034697B2 Formation of devices by epitaxial layer overgrowth 有权
标题翻译：通过外延层过度生长形成器件
公开(公告)号：US08034697B2
公开(公告)日：2011-10-11
申请号：US12680872
申请日：2009-09-18
申请人： James Fiorenza , Anthony Lochtefeld , Jie Bai , Ji-Soo Park , Jennifer Hydrick , Jizhong Li , Zhiyuan Cheng
发明人： James Fiorenza , Anthony Lochtefeld , Jie Bai , Ji-Soo Park , Jennifer Hydrick , Jizhong Li , Zhiyuan Cheng
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02538 , H01L21/02381 , H01L21/0245 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02636 , H01L21/02639 , H01L21/02647 , H01L29/205 , H01L31/0687 , H01L31/06875 , H01L31/1808 , H01L31/1852 , H01L31/1892 , Y02E10/544
摘要： Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.
摘要翻译：提供了用于通过使用纵横比捕获（ART）和外延层过度生长（ELO）在基底上形成诸如晶格失配的材料的器件（例如太阳能电池）的方法和结构。通常，在第一方面中，本发明的实施例可以包括形成结构的方法。该方法包括在设置在包括第一半导体材料的衬底之上的掩模层中形成第一开口。包括与第一半导体材料晶格失配的第二半导体材料的第一层形成在第一开口内。第一层具有足以在掩模层的顶表面上方延伸的厚度。包括第二半导体材料的第二层形成在第一层上并且在掩模层的至少一部分之上。第一层的垂直生长速率大于第一层的横向生长速率，第二层的横向生长速率大于第二层的垂直生长速率。

2. 发明申请

US20100216277A1 Formation of Devices by Epitaxial Layer Overgrowth 有权
标题翻译：通过外延层生长形成器件
公开(公告)号：US20100216277A1
公开(公告)日：2010-08-26
申请号：US12680872
申请日：2009-09-18
申请人： James Fiorenza , Anthony Lochtefeld , Jie Bai , Ji-Soo Park , Jennifer Hydrick , Jizhong Li , Zhiyuan Cheng
发明人： James Fiorenza , Anthony Lochtefeld , Jie Bai , Ji-Soo Park , Jennifer Hydrick , Jizhong Li , Zhiyuan Cheng
IPC分类号： H01L31/18 , C30B25/04 , B32B38/10 , H01L21/20
CPC分类号： H01L21/02538 , H01L21/02381 , H01L21/0245 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02636 , H01L21/02639 , H01L21/02647 , H01L29/205 , H01L31/0687 , H01L31/06875 , H01L31/1808 , H01L31/1852 , H01L31/1892 , Y02E10/544
摘要： Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semi-conductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.
摘要翻译：提供了用于通过使用纵横比捕获（ART）和外延层过度生长（ELO）在基底上形成诸如晶格失配的材料的器件（例如太阳能电池）的方法和结构。通常，在第一方面中，本发明的实施例可以包括形成结构的方法。该方法包括在设置在包括第一半导体材料的衬底之上的掩模层中形成第一开口。包括与第一半导体材料晶格失配的第二半导体材料的第一层形成在第一开口内。第一层具有足以在掩模层的顶表面上方延伸的厚度。包括第二半导体材料的第二层形成在第一层上并且在掩模层的至少一部分之上。第一层的垂直生长速率大于第一层的横向生长速率，第二层的横向生长速率大于第二层的垂直生长速率。

3. 发明申请

US20120068226A1 Formation of Devices by Epitaxial Layer Overgrowth 有权
标题翻译：通过外延层生长形成器件
公开(公告)号：US20120068226A1
公开(公告)日：2012-03-22
申请号：US13243521
申请日：2011-09-23
申请人： Jennifer Hydrick , Jizhong Li , Zhiyuan Cheng , James G. Fiorenza , Jie Bai , Ji-Soo Park , Anthony Lochtefeld
发明人： Jennifer Hydrick , Jizhong Li , Zhiyuan Cheng , James G. Fiorenza , Jie Bai , Ji-Soo Park , Anthony Lochtefeld
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02538 , H01L21/02381 , H01L21/0245 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02636 , H01L21/02639 , H01L21/02647 , H01L29/205 , H01L31/0687 , H01L31/06875 , H01L31/1808 , H01L31/1852 , H01L31/1892 , Y02E10/544
摘要： Methods and structures are provided for formation of devices on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.
摘要翻译：提供了通过使用纵横比捕获和外延层过度生长来形成衬底上的器件的方法和结构，包括例如晶格失配的材料。一种方法包括在设置在包括第一半导体材料的基板上的掩模层中形成开口。在开口内形成包括与第一半导体材料晶格失配的第二半导体材料的第一层。第一层具有足以在掩模层的顶表面上方延伸的厚度。包括第二半导体材料的第二层形成在第一层上并且在掩模层的至少一部分之上。第一层的垂直生长速率大于第一层的横向生长速率，第二层的横向生长速率大于第二层的垂直生长速率。

4. 发明授权

US08384196B2 Formation of devices by epitaxial layer overgrowth 有权
标题翻译：通过外延层过度生长形成器件
公开(公告)号：US08384196B2
公开(公告)日：2013-02-26
申请号：US13243521
申请日：2011-09-23
申请人： Zhiyuan Cheng , James Fiorenza , Jennifer M. Hydrick , Anthony J. Lochtefeld , Ji-Soo Park , Jie Bai , Jizhong Li
发明人： Zhiyuan Cheng , James Fiorenza , Jennifer M. Hydrick , Anthony J. Lochtefeld , Ji-Soo Park , Jie Bai , Jizhong Li
IPC分类号： H01L29/06
CPC分类号： H01L21/02538 , H01L21/02381 , H01L21/0245 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02636 , H01L21/02639 , H01L21/02647 , H01L29/205 , H01L31/0687 , H01L31/06875 , H01L31/1808 , H01L31/1852 , H01L31/1892 , Y02E10/544
摘要： Methods and structures are provided for formation of devices on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping and epitaxial layer overgrowth. A method includes forming an opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.
摘要翻译：提供了通过使用纵横比捕获和外延层过度生长来形成衬底上的器件的方法和结构，包括例如晶格失配的材料。一种方法包括在设置在包括第一半导体材料的基板上的掩模层中形成开口。在开口内形成包括与第一半导体材料晶格失配的第二半导体材料的第一层。第一层具有足以在掩模层的顶表面上方延伸的厚度。包括第二半导体材料的第二层形成在第一层上并且在掩模层的至少一部分之上。第一层的垂直生长速率大于第一层的横向生长速率，第二层的横向生长速率大于第二层的垂直生长速率。

5. 发明申请

US20080099785A1 Defect Reduction Using Aspect Ratio Trapping 有权
标题翻译：缺陷减少使用纵横比陷阱
公开(公告)号：US20080099785A1
公开(公告)日：2008-05-01
申请号：US11852078
申请日：2007-09-07
申请人： Jie Bai , Ji-Soo Park , Anthony Lochtefeld
发明人： Jie Bai , Ji-Soo Park , Anthony Lochtefeld
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L29/045 , C30B25/183 , C30B29/40 , C30B29/48 , H01L21/02381 , H01L21/02433 , H01L21/02521 , H01L21/02532 , H01L21/02598 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/0688 , H01L29/165 , H01L29/32
摘要： Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.
摘要翻译：在非晶体侧壁附近形成晶格不匹配的外延膜。本发明的实施例包括形成将薄膜中的位错引导到侧壁的小平面。

6. 发明授权

US08847279B2 Defect reduction using aspect ratio trapping 有权
标题翻译：缺陷减少使用纵横比捕获
公开(公告)号：US08847279B2
公开(公告)日：2014-09-30
申请号：US13446612
申请日：2012-04-13
申请人： Jie Bai , Ji-Soo Park , Anthony J. Lochtefeld
发明人： Jie Bai , Ji-Soo Park , Anthony J. Lochtefeld
IPC分类号： H01L21/02 , C30B25/18 , C30B29/48 , C30B29/40
CPC分类号： H01L29/045 , C30B25/183 , C30B29/40 , C30B29/48 , H01L21/02381 , H01L21/02433 , H01L21/02521 , H01L21/02532 , H01L21/02598 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/0688 , H01L29/165 , H01L29/32
摘要： Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.
摘要翻译：在非晶体侧壁附近形成晶格不匹配的外延膜。本发明的实施例包括形成将薄膜中的位错引导到侧壁的小平面。

7. 发明授权

US08173551B2 Defect reduction using aspect ratio trapping 有权
标题翻译：缺陷减少使用纵横比捕获
公开(公告)号：US08173551B2
公开(公告)日：2012-05-08
申请号：US11852078
申请日：2007-09-07
申请人： Jie Bai , Ji-Soo Park , Anthony J. Lochtefeld
发明人： Jie Bai , Ji-Soo Park , Anthony J. Lochtefeld
IPC分类号： H01L21/31
CPC分类号： H01L29/045 , C30B25/183 , C30B29/40 , C30B29/48 , H01L21/02381 , H01L21/02433 , H01L21/02521 , H01L21/02532 , H01L21/02598 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/0688 , H01L29/165 , H01L29/32
摘要： Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.
摘要翻译：在非晶体侧壁附近形成晶格不匹配的外延膜。本发明的实施例包括形成将薄膜中的位错引导到侧壁的小平面。

8. 发明申请

US20120199876A1 Defect Reduction Using Aspect Ratio Trapping 有权
标题翻译：缺陷减少使用纵横比陷阱
公开(公告)号：US20120199876A1
公开(公告)日：2012-08-09
申请号：US13446612
申请日：2012-04-13
申请人： Jie Bai , Ji-Soo Park , Anthony J. Lochtefeld
发明人： Jie Bai , Ji-Soo Park , Anthony J. Lochtefeld
IPC分类号： H01L29/06
CPC分类号： H01L29/045 , C30B25/183 , C30B29/40 , C30B29/48 , H01L21/02381 , H01L21/02433 , H01L21/02521 , H01L21/02532 , H01L21/02598 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/0688 , H01L29/165 , H01L29/32
摘要： Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.
摘要翻译：在非晶体侧壁附近形成晶格不匹配的外延膜。本发明的实施例包括形成将薄膜中的位错引导到侧壁的小平面。

9. 发明授权

US07940734B2 Mobile communication system having radio access network and method controlling call processing load thereof 失效
标题翻译：具有无线电接入网络的移动通信系统和控制其呼叫处理负载的方法
公开(公告)号：US07940734B2
公开(公告)日：2011-05-10
申请号：US11722302
申请日：2005-05-17
申请人： Ji-Soo Park , Moon-Soo Jang , In-Seong Park , Pyeong-Jung Song
发明人： Ji-Soo Park , Moon-Soo Jang , In-Seong Park , Pyeong-Jung Song
IPC分类号： H04W4/00
CPC分类号： H04W28/08
摘要： A mobile communication system structured in a radio access network having a base station, a control station, and a switch network for matching a mobile station and a core network, the control station comprising a traffic signal process; a control signal processor; a call process load controller; and a call processor, wherein the call process load controller refers to information on call process volume included in a call process volume request message sent from the call processor and the traffic signal processor, selects the corresponding call processor and traffic signal processor according to weight estimated based on software and hardware performance, and sends the call control service request message containing information on the selected traffic signal processor to the selected call processor.
摘要翻译：一种结构在无线电接入网络中的移动通信系统，其具有基站，控制站和用于匹配移动台和核心网络的交换网络，所述控制站包括业务信号处理; 控制信号处理器; 呼叫过程负载控制器; 以及呼叫处理器，其中呼叫处理负载控制器参考包括在从呼叫处理器和业务信号处理器发送的呼叫处理卷请求消息中的呼叫处理量的信息，根据估计的重量来选择相应的呼叫处理器和业务信号处理器基于软件和硬件性能，并将包含所选流量信号处理器上的信息的呼叫控制服务请求消息发送到所选择的呼叫处理器。

10. 发明申请

US20100003999A1 MOBILE COMMUNICATION SYSTEM HAVING RADIO ACCESS NETWORK AND METHOD CONTROLLING CALL PROCESSING LOAD THEREOF 失效
标题翻译：具有无线接入网络的移动通信系统和控制其呼叫处理负载的方法
公开(公告)号：US20100003999A1
公开(公告)日：2010-01-07
申请号：US11722302
申请日：2005-05-17
申请人： Ji-Soo Park , Moon-Soo Jang , In-Seong Park , Pyeong-Jung Song
发明人： Ji-Soo Park , Moon-Soo Jang , In-Seong Park , Pyeong-Jung Song
IPC分类号： H04W72/08 , H04W72/04
CPC分类号： H04W28/08
摘要： A mobile communication system structured in a radio access network having a base station, a control station, and a switch network for matching a mobile station and a core network, the control station comprising a traffic signal process; a control signal processor; a call process load controller; and a call processor, wherein the call process load controller refers to information on call process volume included in a call process volume request message sent from the call processor and the traffic signal processor, selects the corresponding call processor and traffic signal processor according to weight estimated based on software and hardware performance, and sends the call control service request message containing information on the selected traffic signal processor to the selected call processor.
摘要翻译：一种结构在无线电接入网络中的移动通信系统，其具有基站，控制站和用于匹配移动台和核心网络的交换网络，所述控制站包括业务信号处理; 控制信号处理器; 呼叫过程负载控制器; 以及呼叫处理器，其中呼叫处理负载控制器参考包括在从呼叫处理器和业务信号处理器发送的呼叫处理卷请求消息中的呼叫处理量的信息，根据估计的重量来选择相应的呼叫处理器和业务信号处理器基于软件和硬件性能，并将包含所选流量信号处理器上的信息的呼叫控制服务请求消息发送到所选择的呼叫处理器。

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