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1. 发明申请

US20090295517A1 Expandable Energy Storage for Portable Electronic Devices 审中-公开
标题翻译：便携式电子设备的可扩展储能
公开(公告)号：US20090295517A1
公开(公告)日：2009-12-03
申请号：US12128924
申请日：2008-05-29
申请人： James Chyi Lai , Kai Chun Fong
发明人： James Chyi Lai , Kai Chun Fong
IPC分类号： H01F7/00
CPC分类号： H01G4/38 , H01M12/005
摘要： An expandable energy storage for portable electronic devices is disclosed. The expandable energy storage includes magnetic-capacitor (MCAP) energy storage sticks and a controller. The MCAP energy storage sticks are arranged in parallel and provide electrical power to a portable electronic device. Each MCAP energy storage stick has a positive terminal, a negative terminal, and a controlling terminal for coupling with the portable electronic device. The controller couples the controlling terminals of the MCAP energy storage sticks to a system data terminal.
摘要翻译：公开了用于便携式电子设备的可扩展的能量存储器。可扩展能量存储包括磁电容（MCAP）储能棒和控制器。 MCAP能量储存棒平行布置并向便携式电子设备提供电力。每个MCAP储能棒具有正极端子，负极端子和用于与便携式电子设备耦合的控制端子。控制器将MCAP储能棒的控制端子耦合到系统数据终端。

2. 发明申请

US20090278498A1 Energy Storage System 有权
标题翻译：储能系统
公开(公告)号：US20090278498A1
公开(公告)日：2009-11-12
申请号：US12116297
申请日：2008-05-07
申请人： James Chyi Lai , Kai Chun Fong
发明人： James Chyi Lai , Kai Chun Fong
IPC分类号： H02J7/00
CPC分类号： H02J7/00 , Y10T307/336 , Y10T307/367
摘要： An energy storage system includes a battery charger and energy storage devices. The battery charger is connected to a DC/AC current source. The energy storage devices are coupled between the battery charger and subsystems respectively. Each of the energy storage devices includes a magnetic capacitor (MCAP) and an over current protection device (OCPD). MCAPs are charged by the battery charger and supply the electric power to subsystems connected the energy storage devices. OCPDs detect current from MCAPs to subsystems and protect subsystems from excessive currents of voltages.
摘要翻译：能量存储系统包括电池充电器和储能装置。电池充电器连接到DC / AC电流源。能量存储装置分别耦合在电池充电器和子系统之间。每个能量存储装置包括磁电容器（MCAP）和过流保护装置（OCPD）。 MCAP由电池充电器充电并将电力供应到连接能量存储装置的子系统。 OCPD检测从MCAP到子系统的电流，并保护子系统免受过大的电压。

3. 发明授权

US07911187B2 Energy storage system 有权
标题翻译：储能系统
公开(公告)号：US07911187B2
公开(公告)日：2011-03-22
申请号：US12116297
申请日：2008-05-07
申请人： James Chyi Lai , Kai Chun Fong
发明人： James Chyi Lai , Kai Chun Fong
IPC分类号： H02J7/00
CPC分类号： H02J7/00 , Y10T307/336 , Y10T307/367
摘要： An energy storage system includes a battery charger and energy storage devices. The battery charger is connected to a DC/AC current source. The energy storage devices are coupled between the battery charger and subsystems respectively. Each of the energy storage devices includes a magnetic capacitor (MCAP) and an over current protection device (OCPD). MCAPs are charged by the battery charger and supply the electric power to subsystems connected the energy storage devices. OCPDs detect current from MCAPs to subsystems and protect subsystems from excessive currents of voltages.
摘要翻译：能量存储系统包括电池充电器和储能装置。电池充电器连接到DC / AC电流源。能量存储装置分别耦合在电池充电器和子系统之间。每个能量存储装置包括磁电容器（MCAP）和过流保护装置（OCPD）。 MCAP由电池充电器充电并将电力供应到连接能量存储装置的子系统。 OCPD检测从MCAP到子系统的电流，并保护子系统免受过大的电压。

4. 发明授权

US08149568B2 Load system for an Mcap energy storage module 失效
标题翻译：用于Mcap能量存储模块的负载系统
公开(公告)号：US08149568B2
公开(公告)日：2012-04-03
申请号：US12726890
申请日：2010-03-18
申请人： James Chyi Lai , Kai Chun Fong
发明人： James Chyi Lai , Kai Chun Fong
IPC分类号： H01G9/00
CPC分类号： H01G9/26 , H01G2/106 , H01G4/38 , H01G11/10 , Y02E60/13
摘要： This invention discloses a load system for loading an Mcap energy storage module to an apparatus, comprising: a storage unit and a load unit. The storage unit further comprises: a first housing part and a seal for sealing the first housing part. The first housing part includes four side walls, a bottom wall and a first opening. A plurality of Mcap cell are disposed in the first housing part through the first opening. A first electrode formed in a side wall. A second electrode formed in another side wall facing the first side wall. The load unit comprises a second housing part and a seal for sealing the second housing part. The storage unit is loaded into the second housing part through the second opening.
摘要翻译：本发明公开了一种用于将Mcap能量存储模块加载到设备的负载系统，包括：存储单元和负载单元。存储单元还包括：第一壳体部分和用于密封第一壳体部分的密封件。第一壳体部分包括四个侧壁，底壁和第一开口。多个Mcap电池通过第一开口设置在第一壳体部分中。形成在侧壁中的第一电极。形成在面向第一侧壁的另一个侧壁中的第二电极。负载单元包括第二壳体部分和用于密封第二壳体部分的密封件。存储单元通过第二开口装入第二壳体部分。

5. 发明申请

US20100193906A1 Integrated Circuit Package for Magnetic Capacitor 审中-公开
标题翻译：磁电容器集成电路封装
公开(公告)号：US20100193906A1
公开(公告)日：2010-08-05
申请号：US12365986
申请日：2009-02-05
申请人： James Chyi Lai , Kai Chun Fong
发明人： James Chyi Lai , Kai Chun Fong
IPC分类号： H01L27/06
CPC分类号： H01L23/58 , H01G2/06 , H01L24/48 , H01L25/16 , H01L2224/48227 , H01L2924/00014 , H01L2924/01019 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19104 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An integrated circuit package for magnetic capacitor including a substrate, an integrated circuit and a magnetic capacitor unit is disclosed. The substrate has a first surface and an opposite second surface. The integrated circuit is connected to the second surface of the substrate. The magnetic capacitor unit has a positive terminal and a negative terminal connected to the substrate.
摘要翻译：公开了一种用于包括衬底，集成电路和磁电容器单元的磁电容器的集成电路封装。衬底具有第一表面和相对的第二表面。集成电路连接到基板的第二表面。磁性电容器单元具有连接到基板的正极端子和负极端子。

6. 发明授权

US07702942B2 Method for generating adjustable MRAM timing signals 失效
标题翻译：用于产生可调MRAM定时信号的方法
公开(公告)号：US07702942B2
公开(公告)日：2010-04-20
申请号：US11530650
申请日：2006-09-11
申请人： Kuang-Lun Chen , James Chyi Lai
发明人： Kuang-Lun Chen , James Chyi Lai
IPC分类号： G06F1/00 , G06F1/04 , G06F12/00
CPC分类号： G11C11/16 , G11C7/22 , G11C7/222 , G11C29/02 , G11C29/023 , G11C29/028 , G11C29/50012 , G11C2207/105 , G11C2207/2254
摘要： A variable timing system for a magnetoresistive random access memory circuit (MRAM IC) is embedded in an MRAM IC and includes a number of timing control circuits, where each timing control circuit generates a timing control signal. A number of variable timing circuits are each coupled to receive at least two of the timing control signals, and each of the number of timing circuits outputs a variable timing in response to the timing control signals. At least one MRAM timing driver is connected to receive the variable timing.
摘要翻译：用于磁阻随机存取存储器电路（MRAM IC）的可变定时系统嵌入在MRAM IC中，并且包括多个定时控制电路，其中每个定时控制电路产生定时控制信号。多个可变定时电路被耦合以接收至少两个定时控制信号，并且多个定时电路中的每一个响应于定时控制信号而输出可变定时。连接至少一个MRAM定时驱动器以接收可变定时。

7. 发明申请

US20090233381A1 Interconnect For a GMR Memory Cells And An Underlying Conductive Layer 有权
标题翻译：互连用于GMR存储器单元和底层导电层
公开(公告)号：US20090233381A1
公开(公告)日：2009-09-17
申请号：US12417681
申请日：2009-04-03
申请人： Vicki Wilson , Guoqing Zhan , Ray Buske , James Chyi Lai
发明人： Vicki Wilson , Guoqing Zhan , Ray Buske , James Chyi Lai
IPC分类号： H01L21/00
CPC分类号： H01L27/222 , H01L43/12
摘要： A conductive plug located in a planar dielectric layer, under GMR memory cells, are used to directly connect the lower ferromagnetic layer of one of the GMR memory cell and a conductive layer under the planar dielectric layer.
摘要翻译：位于GMR存储单元之下的平面介质层中的导电插塞用于直接连接GMR存储单元之一的下铁磁层和平面介电层下的导电层。

8. 发明授权

US07489589B2 MRAM internal clock pulse generation with an ATD circuit and the method thereof 失效
标题翻译：具有ATD电路的MRAM内部时钟脉冲生成及其方法
公开(公告)号：US07489589B2
公开(公告)日：2009-02-10
申请号：US11530663
申请日：2006-09-11
申请人： Kuang-Lun Chen , James Chyi Lai
发明人： Kuang-Lun Chen , James Chyi Lai
IPC分类号： G11C8/18
CPC分类号： G11C8/18 , G11C11/15
摘要： A magnetic random access memory having an extended address transition detection circuit having a chip enable input, a chip write enable input, a data bus connection, and an address bus connection. The extended address transition detection circuit has an extended transition detection signal output. The magnetic random access memory has a timing controller with a timing control input connected to the address transition detection signal output. The chip enable input, the chip write enable input, the data bus connection, and the address bus connection are buffered and driven off chip.
摘要翻译：具有扩展地址转换检测电路的磁性随机存取存储器具有芯片使能输入，芯片写使能输入，数据总线连接和地址总线连接。扩展地址转换检测电路具有扩展的转移检测信号输出。磁性随机存取存储器具有定时控制器，其具有连接到地址转换检测信号输出的定时控制输入。芯片使能输入，芯片写使能输入，数据总线连接和地址总线连接都被缓冲和驱动脱离芯片。

9. 发明授权

US07269061B2 Magnetic memory 失效
标题翻译：磁记忆
公开(公告)号：US07269061B2
公开(公告)日：2007-09-11
申请号：US11549247
申请日：2006-10-13
申请人： Tom Allen Agan , James Chyi Lai
发明人： Tom Allen Agan , James Chyi Lai
IPC分类号： G11C11/14 , G11C11/15 , G11C11/02 , G11C5/06 , G11C5/08
CPC分类号： G11C11/15
摘要： A magnetic memory has a first, a second and a third magnetic transistor. The first magnetic transistor has a first magnetic section and a second magnetic section, wherein the first magnetic section couples to a high voltage end. The second magnetic transistor has a third magnetic section and a fourth magnetic section, wherein the third magnetic section couples to a low voltage end, and the fourth magnetic section couples to the second magnetic section of the first magnetic transistor. The third magnetic transistor has a fifth magnetic section and a sixth magnetic section, wherein the fifth magnetic section couples with the second magnetic section and the fourth magnetic section together, and the sixth magnetic section couples to an input/output end.
摘要翻译：磁存储器具有第一，第二和第三磁性晶体管。第一磁性晶体管具有第一磁性部分和第二磁性部分，其中第一磁性部分耦合到高压端。第二磁性晶体管具有第三磁性部分和第四磁性部分，其中第三磁性部分耦合到低电压端，并且第四磁性部分耦合到第一磁性晶体管的第二磁性部分。第三磁性晶体管具有第五磁性部分和第六磁性部分，其中第五磁性部分与第二磁性部分和第四磁性部分耦合在一起，并且第六磁性部分耦合到输入/输出端。

10. 发明申请

US20100320551A1 Magnetoresistive Random Access Memory with Improved Layout Design and Process Thereof 有权
标题翻译：具有改进的布局设计和工艺的磁阻随机存取存储器
公开(公告)号：US20100320551A1
公开(公告)日：2010-12-23
申请号：US12872020
申请日：2010-08-31
申请人： Vicki Wilson , Guoqing Zhan , James Chyi Lai
发明人： Vicki Wilson , Guoqing Zhan , James Chyi Lai
IPC分类号： H01L29/82
CPC分类号： H01L27/222
摘要： A MRAM memory and process thereof is described. A GMR magnetic layer is patterned to form a memory bit layer and an intermediate conductive layer. The intermediate conductive layer is disposed between two conductive layers such that shallow metal plugs can be utilized to interconnect the intermediate conductive layer and the conductive layers. Thus, a conventional deep tungsten plug process, interconnecting two conductive layers, is eliminated.
摘要翻译：描述MRAM存储器及其处理。图案化GMR磁性层以形成记忆位层和中间导电层。中间导电层设置在两个导电层之间，使得浅金属插塞可用于互连中间导电层和导电层。因此，消除了互连两个导电层的常规深钨塞工艺。

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