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1. 发明申请

US20110042610A1 METHOD FOR PREPARING CATHODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY 有权
标题翻译：用于锂二次电池制备阴极活性材料的方法
公开(公告)号：US20110042610A1
公开(公告)日：2011-02-24
申请号：US12933629
申请日：2009-03-24
申请人： Jaephil Cho , Junho Eom , Yoon Han Chang , Chang-Won Park , Seung-Won Lee , Sang-Hoon Jeon , Byung Do Park
发明人： Jaephil Cho , Junho Eom , Yoon Han Chang , Chang-Won Park , Seung-Won Lee , Sang-Hoon Jeon , Byung Do Park
IPC分类号： H01M4/88
CPC分类号： H01M4/5825 , B82Y30/00 , C01B25/45 , C01G51/42 , C01P2002/52 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C01P2004/84 , C01P2006/40 , H01M4/366 , H01M4/485 , H01M4/525 , H01M10/0525
摘要： Disclosed is a method for preparing a cathode active material for a lithium secondary battery, and the preparing method includes: adding a phosphorus compound to a transition metal oxide dispersion liquid to prepare a coating liquid; drying the coating liquid to prepare a powder including phosphorus oxide coated on the surface of the transition metal oxide; and dry-mixing the powder coated with the phosphorus oxide with a lithium intercalation compound, and then firing the mixture to form a solid solution compound of Li-M1-M2-P—O (where M1 is a transition metal derived from transition metal oxide, and M2 is a metal derived from lithium intercalation compound) on the surface of the lithium intercalation compound.The method for preparing a cathode active material for a lithium secondary battery simplifies the conventional preparing process to save process cost, and it provides comparable electrochemical characteristics to a cathode active material obtained from a wet process.
摘要翻译：公开了一种锂二次电池正极活性物质的制备方法，其制备方法包括：向过渡金属氧化物分散液中添加磷化合物，制备涂布液; 干燥涂布液以制备包含在过渡金属氧化物表面上的氧化磷的粉末; 将含有氧化磷的粉末与锂嵌入化合物进行干混，然后烧成混合物，形成Li-M1-M2-P-O的固溶体化合物（其中，M1为过渡金属氧化物的过渡金属，并且M2是来自锂嵌入化合物的金属）在锂嵌入化合物的表面上。制备用于锂二次电池的正极活性材料的方法简化了常规的制备方法以节省工艺成本，并且与从湿法获得的阴极活性材料提供了可比较的电化学特性。

2. 发明授权

US08444883B2 Method for preparing cathode active material for lithium secondary battery 有权
标题翻译：锂二次电池正极活性物质的制备方法
公开(公告)号：US08444883B2
公开(公告)日：2013-05-21
申请号：US12933629
申请日：2009-03-24
申请人： Jaephil Cho , Junho Eom , Yoon Han Chang , Chang-Won Park , Seung-Won Lee , Sang-Hoon Jeon , Byung Do Park
发明人： Jaephil Cho , Junho Eom , Yoon Han Chang , Chang-Won Park , Seung-Won Lee , Sang-Hoon Jeon , Byung Do Park
IPC分类号： H01M4/36
CPC分类号： H01M4/5825 , B82Y30/00 , C01B25/45 , C01G51/42 , C01P2002/52 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C01P2004/84 , C01P2006/40 , H01M4/366 , H01M4/485 , H01M4/525 , H01M10/0525
摘要： A method for preparing a cathode active material for a lithium secondary battery is provided. The preparing method includes: adding a phosphorus compound to a transition metal oxide dispersion liquid to prepare a coating liquid; drying the coating liquid to prepare a powder including phosphorus oxide coated on the surface of the transition metal oxide; and dry-mixing the powder coated with the phosphorus oxide with a lithium intercalation compound, and then firing the mixture to form a solid solution compound of L1-M1-M2-P—O (where M1 is a transition metal derived from transition metal oxide, and M2 is a metal derived from lithium intercalation compound) on the surface of the lithium intercalation compound. The method for preparing a cathode active material for a lithium secondary battery simplifies the conventional preparing process to save process cost, and it provides comparable electrochemical characteristics to a cathode active material obtained from a wet process.
摘要翻译：提供了制备锂二次电池用正极活性物质的方法。该制备方法包括：向过渡金属氧化物分散液中加入磷化合物以制备涂布液; 干燥涂布液以制备包含在过渡金属氧化物表面上的氧化磷的粉末; 将含有氧化磷的粉末与锂嵌入化合物进行干混，然后烧成该混合物以形成L1-M1-M2-PO（其中M1为过渡金属氧化物的过渡金属）和 M2是由锂嵌入化合物衍生的金属）在锂嵌入化合物的表面上。制备用于锂二次电池的正极活性材料的方法简化了常规的制备方法以节省工艺成本，并且与从湿法获得的阴极活性材料提供了可比较的电化学特性。

3. 发明授权

US08493813B2 Row decoder circuit 失效
标题翻译：行解码电路
公开(公告)号：US08493813B2
公开(公告)日：2013-07-23
申请号：US13238816
申请日：2011-09-21
申请人： Seung-Won Lee
发明人： Seung-Won Lee
IPC分类号： G11C8/08
CPC分类号： G11C8/10 , G11C8/08 , G11C16/08
摘要： A row decoder circuit includes a decoding unit and first and second wordline driving units. The decoding unit generates a first driving signal and a second driving signal based on a selection signal and wordline voltages. A voltage level of the first driving signal and a voltage level of the second driving signal depend on an operation mode. The first wordline driving unit is connected to a first wordline and outputs one of the first driving signal and the second driving signal as a first wordline driving signal based on first driving control signals. The second wordline driving unit is connected to a second wordline and outputs one of the first driving signal and the second driving signal as a second wordline driving signal based on second driving control signals.
摘要翻译：行解码器电路包括解码单元和第一和第二字线驱动单元。解码单元基于选择信号和字线电压产生第一驱动信号和第二驱动信号。第一驱动信号的电压电平和第二驱动信号的电压电平取决于操作模式。第一字线驱动单元连接到第一字线，并且基于第一驱动控制信号，将第一驱动信号和第二驱动信号之一作为第一字线驱动信号输出。第二字线驱动单元连接到第二字线，并且基于第二驱动控制信号输出第一驱动信号和第二驱动信号中的一个作为第二字线驱动信号。

4. 发明申请

US20130170126A1 MOBILE APPARATUS 有权
标题翻译：手机设备
公开(公告)号：US20130170126A1
公开(公告)日：2013-07-04
申请号：US13681679
申请日：2012-11-20
申请人： Seung-Won Lee
发明人： Seung-Won Lee
IPC分类号： H05K7/02 , G06F1/16
CPC分类号： G06F1/1654 , G06F1/1601 , G06F1/1618 , G06F1/1626 , G06F1/1632 , G06F1/1669 , G06F1/1675 , G06F1/1681 , G06F1/1683 , G06F3/0202 , H04M1/0254 , H04M1/04 , H04M1/23 , H05K7/02
摘要： A mobile apparatus includes a first body, a second body, a rotary adaptor including an accommodation portion to accommodate the second body, rotatably installed on the first body, and to move the second body to a position where the second body is stacked on the first body and a position where the second body is unfolded, first magnets disposed on the accommodation portion, and second magnets disposed on the second body so as to face the first magnets and having different polarity from the first magnets.
摘要翻译：移动装置包括第一主体，第二主体，旋转适配器，其包括容纳第二主体的容纳部，可旋转地安装在第一主体上，并且将第二主体移动到第二主体在第一主体上堆叠的位置主体和第二主体展开的位置，设置在容纳部分上的第一磁体和设置在第二主体上以与第一磁体相对并且具有与第一磁体不同的极性的第二磁体。

5. 发明授权

US07970982B2 Memory card and memory system having the same 失效
标题翻译：存储卡和存储器系统具有相同的功能
公开(公告)号：US07970982B2
公开(公告)日：2011-06-28
申请号：US11761620
申请日：2007-06-12
申请人： Ki-Hong Kim , Byeong-Hoon Lee , Seung-Won Lee , Sun-Kwon Kim
发明人： Ki-Hong Kim , Byeong-Hoon Lee , Seung-Won Lee , Sun-Kwon Kim
IPC分类号： G06F12/02
CPC分类号： G11C16/20
摘要： A memory card includes: a first memory chip responding to all commands input externally; and a second memory chip responding to commands, among the commands input externally, relevant to reading, programming, and erasing operations with data. Card identification information stored in the first memory chip includes capacity information corresponding to a sum of sizes of the first and second memory chips. The plurality of memory chips of the memory card are useful in designing the memory card with storage capacity in various forms.
摘要翻译：存储卡包括：响应于外部输入的所有命令的第一存储器芯片; 以及响应命令的第二存储器芯片，在外部输入的命令中与数据的读取，编程和擦除操作相关。存储在第一存储器芯片中的卡识别信息包括对应于第一和第二存储器芯片的尺寸之和的容量信息。存储卡的多个存储芯片可用于以各种形式设计具有存储容量的存储卡。

6. 发明授权

US07750611B2 Internal voltage controllers including multiple comparators and related smart cards and methods 有权
标题翻译：内部电压控制器包括多个比较器和相关的智能卡和方法
公开(公告)号：US07750611B2
公开(公告)日：2010-07-06
申请号：US11951594
申请日：2007-12-06
申请人： Seung-Won Lee
发明人： Seung-Won Lee
IPC分类号： G05F1/563 , G05F1/565
CPC分类号： G05F1/56
摘要： A voltage controller may include a pulse generator and an internal voltage control circuit coupled to the pulse generator. The pulse generator may be configured to generate a control signal in response to at least one of a mode signal and/or an external voltage. The internal voltage control circuit may be configured to generate an internal voltage at an internal voltage node, and the internal voltage control circuit may include a voltage divider, first and second comparators, and a driver. The voltage divider may be coupled between the internal voltage node and a first reference voltage, and the voltage divider may generate a feedback voltage that is between the internal voltage and the first reference voltage. The first comparator may be configured to generate a first comparison result responsive to comparing the feedback voltage with a second reference voltage, and the second comparator may be configured to generate a second comparison result responsive to comparing the feedback voltage with the second reference voltage in response to the control signal. The driver may be coupled between an external voltage and the internal voltage node, and the driver may be configured to generate the internal voltage responsive to the first and second comparison results. Related methods and smart cards are also discussed.
摘要翻译：电压控制器可以包括脉冲发生器和耦合到脉冲发生器的内部电压控制电路。脉冲发生器可以被配置为响应于模式信号和/或外部电压中的至少一个而产生控制信号。内部电压控制电路可以被配置为在内部电压节点处产生内部电压，并且内部电压控制电路可以包括分压器，第一和第二比较器以及驱动器。分压器可以耦合在内部电压节点和第一参考电压之间，并且分压器可以产生处于内部电压和第一参考电压之间的反馈电压。第一比较器可以被配置为响应于将反馈电压与第二参考电压进行比较而产生第一比较结果，并且第二比较器可以被配置为响应于响应于将反馈电压与响应于第二参考电压进行比较而产生第二比较结果到控制信号。驱动器可以耦合在外部电压和内部电压节点之间，并且驱动器可以被配置为响应于第一和第二比较结果而产生内部电压。还讨论了相关方法和智能卡。

7. 发明授权

US07669788B2 Fluid injector for treating surface of flat display panel 有权
标题翻译：用于处理平面显示面板表面的流体注射器
公开(公告)号：US07669788B2
公开(公告)日：2010-03-02
申请号：US10864994
申请日：2004-06-10
申请人： Yong-Seok Park , Kyoung-Heon Heo , Seung-Won Lee
发明人： Yong-Seok Park , Kyoung-Heon Heo , Seung-Won Lee
IPC分类号： B05B1/26
CPC分类号： B05C5/0254 , B05B13/0207
摘要： A fluid injector for treating a surface of a flat display panel includes a case provided with a cavity for receiving fluid; a pair of nozzle guiders coupled to the case and disposed facing each other; a gap-adjusting plate disposed between the nozzle guiders to adjust a gap between the nozzle guiders; and a coupling device for coupling the nozzle guiders to the gap-adjusting plate.
摘要翻译：用于处理平面显示面板的表面的流体注入器包括设置有用于接收流体的空腔的壳体; 一对连接到壳体并相对设置的喷嘴引导器; 设置在所述喷嘴引导件之间的间隙调节板，以调节所述喷嘴引导件之间的间隙; 以及用于将喷嘴引导件联接到间隙调节板的联接装置。

8. 发明申请

US20070285990A1 Semiconductor device and method for compensating voltage drop of a bit line 审中-公开
标题翻译：用于补偿位线电压降的半导体器件和方法
公开(公告)号：US20070285990A1
公开(公告)日：2007-12-13
申请号：US11648293
申请日：2006-12-29
申请人： Seung-Won Lee
发明人： Seung-Won Lee
IPC分类号： G11C11/34
CPC分类号： G11C16/26 , G11C7/12 , G11C7/14 , G11C16/24
摘要： Provided are a semiconductor device and a method for compensating for a voltage drop of a bit line. The semiconductor device includes at least one monitoring bit line and at least one main memory bit line, and monitors a voltage of the at least one monitoring bit line after a precharging operation and supplies a predetermined compensation current to the at least one monitoring bit line and the at least one main memory bit line based on a monitoring result. Accordingly, it is possible to precisely compensate for a voltage drop occurring in the main memory bit line due to under precharge or leakage current, thereby preventing unnecessary compensation current from being supplied. Therefore, it is possible to stably perform a read operation of the semiconductor device.
摘要翻译：提供一种用于补偿位线的电压降的半导体器件和方法。所述半导体器件包括至少一个监视位线和至少一个主存储器位线，并且在预充电操作之后监视所述至少一个监视位线的电压，并将预定补偿电流提供给所述至少一个监视位线;以及所述至少一个主存储器位线基于监视结果。因此，可以精确地补偿由于在预充电或漏电流之下在主存储器位线中发生的电压降，从而防止不必要的补偿电流被提供。因此，可以稳定地执行半导体器件的读取操作。

9. 发明授权

US07016232B2 Non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07016232B2
公开(公告)日：2006-03-21
申请号：US10922122
申请日：2004-08-18
申请人： Seung-Won Lee , Seung-Keun Lee
发明人： Seung-Won Lee , Seung-Keun Lee
IPC分类号： G12C16/00
CPC分类号： G11C7/062 , G11C7/18 , G11C16/04 , G11C16/28 , G11C29/24 , G11C29/50004
摘要： A memory device in accordance with embodiments of the present invention includes a reference cell array and a plurality of banks. Each of the banks includes memory cells. A plurality of current copier circuits corresponds to the banks, respectively. Each of the current copier circuits copies a reference current flowing through a reference cell array to generate a reference voltage. A plurality of sense blocks correspond to the banks, respectively. Each of the sense blocks includes a plurality of sense amplifiers for sensing data from a corresponding bank in response to the reference voltage from the corresponding current copier circuit. Memory cell lay-out area is reduced, and sense speed is increased.
摘要翻译：根据本发明的实施例的存储器件包括参考单元阵列和多个存储体。每个银行都包含存储单元。多个当前复印机电路分别对应于存储体。每个当前复印机电路复制流过参考单元阵列的参考电流以产生参考电压。多个感测块分别对应于存储体。每个感测块包括多个读出放大器，用于响应于来自相应的当前复印机电路的参考电压来感测来自相应存储体的数据。存储单元布局区域减少，感测速度提高。

10. 发明授权

US08625366B2 Negative high voltage generator and non-volatile memory device including negative high voltage generator 有权
标题翻译：负高压发生器和非易失性存储器件包括负高压发生器
公开(公告)号：US08625366B2
公开(公告)日：2014-01-07
申请号：US13325876
申请日：2011-12-14
申请人： Seung-Won Lee
发明人： Seung-Won Lee
IPC分类号： G11C5/14 , G11C7/00 , G05F1/10 , G05F3/02
CPC分类号： H02M3/073 , G11C5/145 , G11C5/147 , H02M2003/071
摘要： A negative high voltage generator includes a charge providing unit and a voltage conversion unit. The charge providing unit is configured to periodically output a predetermined amount of positive charges received from a supply voltage. The voltage conversion unit is configured to store the positive charges and to discharge the stored positive charges to a ground voltage to generate a negative high voltage having a magnitude larger than a magnitude of the supply voltage.
摘要翻译：负高压发生器包括充电提供单元和电压转换单元。充电提供单元被配置为周期性地输出从电源电压接收的预定量的正电荷。电压转换单元被配置为存储正电荷并且将所存储的正电荷放电到接地电压以产生具有大于电源电压幅度的幅度的负高电压。

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