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1. 发明申请

US20080204626A1 Light emitting diodes and display apparatuses using the same 有权
标题翻译：发光二极管及使用其的显示装置
公开(公告)号：US20080204626A1
公开(公告)日：2008-08-28
申请号：US11711877
申请日：2007-02-28
申请人： Jae-hee Cho , Martin Schubert , E. Fred Schubert , Jong-kyu Kim , Cheol-soo Sone
发明人： Jae-hee Cho , Martin Schubert , E. Fred Schubert , Jong-kyu Kim , Cheol-soo Sone
IPC分类号： G02F1/1335 , H01L33/00
CPC分类号： H01L33/46 , G02F1/133603 , G02F1/13362 , H01L33/405
摘要： In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.
摘要翻译：在发光二极管中，第一半导体层供应电子，第二半导体层提供空穴。在第一和第二半导体层之间形成有源层。有源层接收电子和空穴，并且响应于电子和孔之间的耦合而发光。第一反射层形成在第一半导体层的底部，第二反射层形成在第二半导体层的顶部。从有源层发射的光朝向有源层的一侧离开。

2. 发明授权

US07816855B2 LED device having diffuse reflective surface 有权
标题翻译： LED装置具有漫反射面
公开(公告)号：US07816855B2
公开(公告)日：2010-10-19
申请号：US11318557
申请日：2005-12-28
申请人： Jae-hee Cho , Jong-kyu Kim , Cheol-soo Sone , E. Fred Schubert
发明人： Jae-hee Cho , Jong-kyu Kim , Cheol-soo Sone , E. Fred Schubert
IPC分类号： H05B33/00
CPC分类号： H01L33/50 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0091 , H01L2924/00014
摘要： A LED device is provided having a diffuse reflective surface which includes an LED chip emitting light, a reflector cup having the LED chip arranged at a bottom surface thereof and having an angled surface which diffusely reflects the light emitted by the LED chip, and a light conversion material provided in the reflector cup for converting the light emitted by the LED chip into visible light rays. The light-conversion material is spatially separated from the LED chip by a length equal or greater than the maximum length of the LED chip.
摘要翻译：提供一种LED装置，其具有漫反射表面，其包括发射光的LED芯片，具有布置在其底表面处的LED芯片的反射杯，并且具有使LED芯片发射的光漫反射的倾斜表面，以及光设置在反射杯中的用于将由LED芯片发射的光转换成可见光的转换材料。光转换材料与LED芯片在空间上分开等于或大于LED芯片的最大长度的长度。

3. 发明申请

US20070029561A1 Omni-directional reflector and light emitting diode adopting the same 审中-公开
标题翻译：全向反射器和采用相同的发光二极管
公开(公告)号：US20070029561A1
公开(公告)日：2007-02-08
申请号：US11271970
申请日：2005-11-14
申请人： Jae-hee Cho , Jing-qun Xi , Jong-kyu Kim , Yong-jo Park , Cheol-soo Sone , E. Fred Schubert
发明人： Jae-hee Cho , Jing-qun Xi , Jong-kyu Kim , Yong-jo Park , Cheol-soo Sone , E. Fred Schubert
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , B82Y20/00 , H01L33/32 , H01L33/42 , H01L33/46
摘要： An omni-directional reflector having a transparent conductive low-index layer formed of conductive nanorods and a light emitting diode utilizing the omni-directional reflector are provided. The omni-directional reflector includes: a transparent conductive low-index layer formed of conductive nanorods; and a reflective layer formed of a metal.
摘要翻译：提供了具有由导电纳米棒形成的透明导电低折射率层的全向反射器和利用全向反射器的发光二极管。全向反射器包括：由导电纳米棒形成的透明导电低折射率层; 以及由金属形成的反射层。

4. 发明授权

US07483212B2 Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same 有权
标题翻译：光学薄膜，具有该半导体发光器件的半导体发光器件及其制造方法
公开(公告)号：US07483212B2
公开(公告)日：2009-01-27
申请号：US11657648
申请日：2007-01-25
申请人： Jae-hee Cho , Frank Wilhelm Mont , Cheol-soo Sone , Jong-kyu Kim , June-o Song , E. Fred Schubert
发明人： Jae-hee Cho , Frank Wilhelm Mont , Cheol-soo Sone , Jong-kyu Kim , June-o Song , E. Fred Schubert
IPC分类号： G02B1/10
CPC分类号： G02B1/113
摘要： Provided are a highly transmissive optical thin film having an improved structure, in which, optical reflection (due to a difference in the refractive index between a semiconductor material and the air, when light is extracted from a semiconductor light emitting device into the air) may be suppressed, an optical output loss may be reduced and light transmittance efficiency may be maximized or increased, a semiconductor light emitting device having the same, and methods of fabricating the same. The optical thin film may include a first material layer having a first refractive index, a second material layer formed on the first material layer and having a second refractive index that is smaller than the first refractive index, and a graded-refractive index layer interposed or inserted between the first material layer and the second material layer and having a multi-layer structure in which refractive index distribution gradually decreases in the range between the first refractive index and the second refractive index as the refractive index distribution progresses from the first material layer toward the second material layer.
摘要翻译：提供了具有改进结构的高透射性光学薄膜，其中，光反射（由于半导体材料和空气之间的折射率的差异，当将光从半导体发光器件提取到空气中时）可以可以抑制光输出损失，并且可以使透光率效率最大化或增加，具有该光输出损耗的半导体发光器件及其制造方法。光学薄膜可以包括具有第一折射率的第一材料层，形成在第一材料层上并且具有小于第一折射率的第二折射率的第二材料层，以及插入或插入在第一材料层和第二材料层之间，并且具有多层结构，其中折射率分布在第一折射率分布和第二折射率之间的范围内随着折射率分布从第一材料层朝向第二材料层。

5. 发明授权

US07411221B2 Light emitting device having protection element and method of manufacturing the light emitting device 有权
标题翻译：具有保护元件的发光器件和制造发光器件的方法
公开(公告)号：US07411221B2
公开(公告)日：2008-08-12
申请号：US11271947
申请日：2005-11-14
申请人： Jae-hee Cho , Luo Hong , Jong-kyu Kim , Yong-jo Park , Cheol-soo Sone , E. Fred Schubert
发明人： Jae-hee Cho , Luo Hong , Jong-kyu Kim , Yong-jo Park , Cheol-soo Sone , E. Fred Schubert
IPC分类号： H01L27/15
CPC分类号： H01L27/0288 , H01L23/62 , H01L27/15 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device having a monolithic protection element and a method of fabricating the light emitting device are provided. The light emitting device includes: a light emitter having a cathode and an anode; and the resistive protection element connected to the light emitter in parallel through the cathode and the anode. Here, a resistance Rs of the resistive protection element has a value between a forward resistance Rf and a reverse resistance Rr of a current of the light emitter.
摘要翻译：提供了具有单片保护元件的发光器件和制造发光器件的方法。发光器件包括：具有阴极和阳极的发光体; 并且电阻保护元件通过阴极和阳极并联连接到发光体。这里，电阻保护元件的电阻Rs具有正向电阻Rf和发光体的电流的反向电阻Rr之间的值。

6. 发明申请

US20100166983A1 OMNI-DIRECTIONAL REFLECTOR AND LIGHT EMITTING DIODE ADOPTING THE SAME 审中-公开
标题翻译： OMNI方向反射器和发光二极管
公开(公告)号：US20100166983A1
公开(公告)日：2010-07-01
申请号：US12721132
申请日：2010-03-10
申请人： Jae-hee CHO , Jing-gun Xi , Jong-kyu Kim , Yong-jo Park , Cheol-soo Sone , E. Fred Schubert
发明人： Jae-hee CHO , Jing-gun Xi , Jong-kyu Kim , Yong-jo Park , Cheol-soo Sone , E. Fred Schubert
IPC分类号： B05D5/12 , C23C14/34
CPC分类号： H01L33/405 , B82Y20/00 , H01L33/32 , H01L33/42 , H01L33/46
摘要： An omni-directional reflector having a transparent conductive low-index layer formed of conductive nanorods and a light emitting diode utilizing the omni-directional reflector are provided. The omni-directional reflector includes: a transparent conductive low-index layer formed of conductive nanorods; and a reflective layer formed of a metal.
摘要翻译：提供了具有由导电纳米棒形成的透明导电低折射率层的全向反射器和利用全向反射器的发光二极管。全向反射器包括：由导电纳米棒形成的透明导电低折射率层; 以及由金属形成的反射层。

7. 发明授权

US07560746B2 Light emitting diodes and display apparatuses using the same 有权
标题翻译：发光二极管及使用其的显示装置
公开(公告)号：US07560746B2
公开(公告)日：2009-07-14
申请号：US11711877
申请日：2007-02-28
申请人： Jae-hee Cho , Martin Schubert , E. Fred Schubert , Jong-kyu Kim , Cheol-soo Sone
发明人： Jae-hee Cho , Martin Schubert , E. Fred Schubert , Jong-kyu Kim , Cheol-soo Sone
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , G02F1/133603 , G02F1/13362 , H01L33/405
摘要： In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.
摘要翻译：在发光二极管中，第一半导体层供应电子，第二半导体层提供空穴。在第一和第二半导体层之间形成有源层。有源层接收电子和空穴，并且响应于电子和孔之间的耦合而发光。第一反射层形成在第一半导体层的底部，第二反射层形成在第二半导体层的顶部。从有源层发射的光朝向有源层的一侧离开。

8. 发明申请

US20080088932A1 Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same 有权
标题翻译：光学薄膜，具有该半导体发光器件的半导体发光器件及其制造方法
公开(公告)号：US20080088932A1
公开(公告)日：2008-04-17
申请号：US11657648
申请日：2007-01-25
申请人： Jae-hee Cho , Frank Wilhelm Mont , Cheol-soo Sone , Jong-kyu Kim , June-o Song , E. Fred Schubert
发明人： Jae-hee Cho , Frank Wilhelm Mont , Cheol-soo Sone , Jong-kyu Kim , June-o Song , E. Fred Schubert
IPC分类号： G02B1/10
CPC分类号： G02B1/113
摘要： Provided are a highly transmissive optical thin film having an improved structure, in which, optical reflection (due to a difference in the refractive index between a semiconductor material and the air, when light is extracted from a semiconductor light emitting device into the air) may be suppressed, an optical output loss may be reduced and light transmittance efficiency may be maximized or increased, a semiconductor light emitting device having the same, and methods of fabricating the same. The optical thin film may include a first material layer having a first refractive index, a second material layer formed on the first material layer and having a second refractive index that is smaller than the first refractive index, and a graded-refractive index layer interposed or inserted between the first material layer and the second material layer and having a multi-layer structure in which refractive index distribution gradually decreases in the range between the first refractive index and the second refractive index as the refractive index distribution progresses from the first material layer toward the second material layer.
摘要翻译：提供了具有改进结构的高透射性光学薄膜，其中，光反射（由于半导体材料和空气之间的折射率的差异，当将光从半导体发光器件提取到空气中时）可以可以抑制光输出损失，并且可以使透光率效率最大化或增加，具有该光输出损耗的半导体发光器件及其制造方法。光学薄膜可以包括具有第一折射率的第一材料层，形成在第一材料层上并且具有小于第一折射率的第二折射率的第二材料层，以及插入或插入在第一材料层和第二材料层之间，并且具有多层结构，其中折射率分布在第一折射率分布和第二折射率之间的范围内随着折射率分布从第一材料层朝向第二材料层。

9. 发明授权

US08502266B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08502266B2
公开(公告)日：2013-08-06
申请号：US12923195
申请日：2010-09-08
申请人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , E. Fred Schubert , Yongjo Park , Cheolsoo Sone , Sukho Yoon
发明人： Min-Ho Kim , Martin F. Schubert , Jong Kyu Kim , E. Fred Schubert , Yongjo Park , Cheolsoo Sone , Sukho Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/04 , H01L33/32
摘要： A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.
摘要翻译：氮化物半导体发光器件包括n型和p型氮化物半导体层，以及设置在n型和p型氮化物半导体层之间的有源层，并且具有堆叠结构，其中多个量子势垒层和一个或更多量子阱层交替堆叠。量子势垒层的净极化小于或等于量子阱层的净极化。可以提供氮化物半导体发光器件，其可以通过最小化量子势垒层和量子阱层之间的净极化失配而在高电流下实现高效率。此外，可以通过降低量子阱层的能量级弯曲的程度来实现高效率的氮化物半导体发光器件。

10. 发明申请

US20110120554A1 ULTRA-LOW REFLECTANCE BROADBAND OMNI-DIRECTIONAL ANTI-REFLECTION COATING 审中-公开
标题翻译：超低反射宽带OMNI-DIRECTIONAL抗反射涂层
公开(公告)号：US20110120554A1
公开(公告)日：2011-05-26
申请号：US12736278
申请日：2009-03-27
申请人： Sameer Chhajed , Jong Kyu Kim , Shawn-Yu Lin , Mei-Ling Kuo , Frank W. Mont , David J. Poxson , E. Fred Schubert , Martin F. Schubert
发明人： Sameer Chhajed , Jong Kyu Kim , Shawn-Yu Lin , Mei-Ling Kuo , Frank W. Mont , David J. Poxson , E. Fred Schubert , Martin F. Schubert
IPC分类号： H01L31/0232 , B32B7/02 , B32B18/00 , G02B1/11 , H01L31/18 , B82Y30/00
CPC分类号： H01L31/02168 , C09D1/00 , C09D5/006 , G02B1/115 , H01L31/0203 , Y02E10/50 , Y10T428/24124 , Y10T428/24975 , Y10T428/249924 , Y10T428/249962
摘要： An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating.
摘要翻译：抗反射涂层的平均总反射率在400-1100nm波长范围内，平均全反射率小于10％，例如小于5.9％，例如4.9至5.9％，入射角范围为0 相对于防反射涂层的表面法线为-90度。抗反射涂层在400-1600nm的整个波长范围内具有小于10％的总反射率，例如小于6％，例如小于4％，并且0- 相对于防反射涂层的表面法线为70度。

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