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1. 发明授权

US07884723B2 Lower power battery-assisted RFID tag having improved recognition distance, and wake-up method thereof 有权
标题翻译：具有改进的识别距离的低功率电池辅助RFID标签及其唤醒方法
公开(公告)号：US07884723B2
公开(公告)日：2011-02-08
申请号：US11928288
申请日：2007-10-30
申请人： Jae-Young Jung , Hae Won Son , Jong Hyun Seo , Junho Yeo , Gil Young Choi , Nae Soo Kim , Cheol Sig Pyo , Jong Suk Chae
发明人： Jae-Young Jung , Hae Won Son , Jong Hyun Seo , Junho Yeo , Gil Young Choi , Nae Soo Kim , Cheol Sig Pyo , Jong Suk Chae
IPC分类号： G08B13/14
CPC分类号： G06K19/07749 , G06K19/0705
摘要： Provided are a radio frequency identification (RFID) tag and a wake-up method thereof. The RFID tag includes: a power source that supplies a driving voltage; a continuous wave detector that receives the driving voltage from the power supply so as to detect a continuous wave in a signal received from an RFID tag reader; a command detector that selectively receives the driving voltage and detects a command in the signal; and a controller that executes the command detected by the command detector by supplying the driving voltage to the command detector if the continuous wave is detected, and stops the driving voltage from being supplied to the command detector if no command is received from the command detector for a predetermined time period.
摘要翻译：提供射频识别（RFID）标签及其唤醒方法。 RFID标签包括：提供驱动电压的电源; 连续波检测器，其从所述电源接收所述驱动电压，以便检测从RFID标签读取器接收的信号中的连续波; 命令检测器，其选择性地接收所述驱动电压并检测所述信号中的命令; 以及控制器，如果检测到连续波，则执行由指令检测器检测到的指令，将驱动电压提供给指令检测器，并且如果没有从命令检测器接收到命令，则将驱动电压提供给命令检测器，预定时间段。

2. 发明申请

US20080136603A1 LOW-POWERED RFID TAG AND METHOD OF EXPANDING LIFECYCLE OF RFID TAG 审中-公开
标题翻译：低功率RFID标签和扩展RFID标签生物的方法
公开(公告)号：US20080136603A1
公开(公告)日：2008-06-12
申请号：US11875493
申请日：2007-10-19
申请人： Su Na Choi , Hae Won Son , JunHo Yeo , Jae Young Jung , Jong Hyun Seo , Gil Young Choi , Cheol Sig Pyo , Jong Suk Chae
发明人： Su Na Choi , Hae Won Son , JunHo Yeo , Jae Young Jung , Jong Hyun Seo , Gil Young Choi , Cheol Sig Pyo , Jong Suk Chae
IPC分类号： H04B7/00
CPC分类号： G06K19/0723 , H04W52/0229 , Y02D70/166
摘要： A battery-powered RFID tag capable of reducing power consumption and a method of waking up the RFID tag are provided. The battery-powered RFID tag has an activated mode where a general command is detected by decoding a signal received from an RFID tag reader and the general command is executed and a standby mode where the general command is not detected. If a voltage of a continuous wave detected from the signal is equal to or higher than a predetermined voltage or if a wake-up command is detected from the signal, the state of the RFID tag is changed from the standby mode to the activated mode. In addition, the RFID tag is driven by a higher one between the voltage of the continuous wave and a voltage of a built-in battery.
摘要翻译：提供了能够降低功耗的电池供电的RFID标签和唤醒RFID标签的方法。电池供电的RFID标签具有激活模式，其中通过对从RFID标签读取器接收的信号进行解码来检测通用命令，并且执行通用命令以及未检测到通用命令的待机模式。如果从信号检测到的连续波的电压等于或高于预定电压，或者如果从该信号检测到唤醒命令，则RFID标签的状态从待机模式改变为激活模式。此外，RFID标签由连续波的电压和内置电池的电压之间的较高驱动。

3. 发明授权

US08416063B2 Method and apparatus for stopping power supply in RFID system 有权
标题翻译：用于停止RFID系统电源的方法和装置
公开(公告)号：US08416063B2
公开(公告)日：2013-04-09
申请号：US11878000
申请日：2007-10-24
申请人： Jae-Young Jung , Hae Won Son , Jun Ho Yeo , Jong Hyun Seo , Su Na Choi , Gil Young Choi , Cheol Sig Pyo
发明人： Jae-Young Jung , Hae Won Son , Jun Ho Yeo , Jong Hyun Seo , Su Na Choi , Gil Young Choi , Cheol Sig Pyo
IPC分类号： H04Q5/22
CPC分类号： G06K19/0723 , G06K19/0701 , H04W52/0245 , Y02D70/166
摘要： Provided are a method and apparatus for stopping power supply to a radio frequency identification (RFID) system. The apparatus includes: a power supplier supplying power to a high RFID tag; an input unit rectifying and boosting an input predetermined frequency band signal and outputting a direct-current (DC) voltage signal; a wake-up determiner comparing a voltage of the DC voltage signal output from the input unit with a predetermined reference voltage and outputting a HIGH signal or a LOW signal; and a switch stopping power supply to the high RFID tag if the wake-up determiner outputs the LOW signal.
摘要翻译：提供了一种用于停止向射频识别（RFID）系统供电的方法和装置。该装置包括：向高RFID标签供电的电源; 输入单元对输入的预定频带信号进行整流和升压并输出直流（DC）电压信号; 唤醒确定器，将从输入单元输出的直流电压信号的电压与预定参考电压进行比较，并输出HIGH信号或LOW信号; 以及如果唤醒确定器输出LOW信号，则开关停止对高RFID标签的电源。

4. 发明授权

US07917834B2 Apparatus and method for computing LLR 有权
标题翻译：用于计算LLR的装置和方法
公开(公告)号：US07917834B2
公开(公告)日：2011-03-29
申请号：US11635366
申请日：2006-12-07
申请人： Jong Hyun Seo , Byung Jo Kim , Seong Su Park
发明人： Jong Hyun Seo , Byung Jo Kim , Seong Su Park
IPC分类号： H03M13/00
CPC分类号： H03M13/3927 , H03M13/395 , H03M13/6502
摘要： Provided are an apparatus and method for efficiently computing a log likelihood ratio (LLR) using the maximum a posteriori (MAP) algorithm known as block combining. The method includes the steps of: calculating alpha values, beta values and gamma values of at least two time sections; calculating transition probabilities of respective states in the at least two time sections; performing a comparison operation for some of the transition probabilities to determine the highest value, selecting one of the other transition probabilities according to the determined high value, comparing the determined value with the selected value to select the higher value, and thereby obtaining the highest of the transition probabilities; and determining an operation to apply according to the highest transition probability and calculating an LLR.
摘要翻译：提供了一种使用称为块组合的最大后验（MAP）算法来有效地计算对数似然比（LLR）的装置和方法。该方法包括以下步骤：计算至少两个时间段的α值，β值和γ值; 计算所述至少两个时间段中的各个状态的转移概率; 对一些转移概率进行比较操作以确定最高值，根据确定的高值选择其他转移概率之一，将所确定的值与所选择的值进行比较以选择较高的值，从而获得最高的转移概率; 并根据最高转移概率确定应用的运算并计算LLR。

5. 发明申请

US20130217192A1 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20130217192A1
公开(公告)日：2013-08-22
申请号：US13881948
申请日：2011-10-27
申请人： Jong Hyun Seo
发明人： Jong Hyun Seo
IPC分类号： H01L29/786
CPC分类号： H01L29/786 , G02F1/1368 , H01L27/1225 , H01L29/7869
摘要： A method for manufacturing a thin film transistor includes forming a semiconductor layer, a wiring layer and a patterned mask layer in sequence on a substrate on which a gate electrode and a gate insulating layer are formed; patterning the wiring layer and the semiconductor layer based on the patterned mask layer while irradiating external light; removing at least a part of the mask layer; forming a channel portion by etching the wiring layer while controlling irradiation of the external light. Further, the method for manufacturing the thin film transistor can obtain an improved structure by forming the semiconductor layer made of an oxide which reacts to external light irradiated thereto, thus capable of adjusting a selectivity between the semiconductor layer and the wiring layer.
摘要翻译：制造薄膜晶体管的方法包括在形成有栅电极和栅极绝缘层的基板上依次形成半导体层，布线层和图案化掩模层; 在照射外部光的同时，基于图案化掩模层图案化布线层和半导体层; 去除所述掩模层的至少一部分; 通过在控制外部光的照射的同时蚀刻布线层来形成沟道部分。此外，制造薄膜晶体管的方法可以通过形成由与其照射的外部光反应的氧化物制成的半导体层来获得改进的结构，从而能够调节半导体层和布线层之间的选择性。

6. 发明授权

US08871578B2 Method for manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US08871578B2
公开(公告)日：2014-10-28
申请号：US13881948
申请日：2011-10-27
申请人： Jong Hyun Seo
发明人： Jong Hyun Seo
IPC分类号： H01L21/84 , H01L29/786 , H01L27/12 , G02F1/1368
CPC分类号： H01L29/786 , G02F1/1368 , H01L27/1225 , H01L29/7869
摘要： A method for manufacturing a thin film transistor includes forming a semiconductor layer, a wiring layer and a patterned mask layer in sequence on a substrate on which a gate electrode and a gate insulating layer are formed; patterning the wiring layer and the semiconductor layer based on the patterned mask layer while irradiating external light; removing at least a part of the mask layer; forming a channel portion by etching the wiring layer while controlling irradiation of the external light. Further, the method for manufacturing the thin film transistor can obtain an improved structure by forming the semiconductor layer made of an oxide which reacts to external light irradiated thereto, thus capable of adjusting a selectivity between the semiconductor layer and the wiring layer.
摘要翻译：制造薄膜晶体管的方法包括在形成有栅电极和栅极绝缘层的基板上依次形成半导体层，布线层和图案化掩模层; 在照射外部光的同时，基于图案化掩模层图案化布线层和半导体层; 去除所述掩模层的至少一部分; 通过在控制外部光的照射的同时蚀刻布线层来形成沟道部分。此外，制造薄膜晶体管的方法可以通过形成由与其照射的外部光反应的氧化物制成的半导体层来获得改进的结构，从而能够调节半导体层和布线层之间的选择性。

7. 发明授权

US07861135B2 Low-complexity and low-power-consumption turbo decoder with variable scaling factor 有权
标题翻译：具有可变比例因子的低复杂度和低功耗Turbo解码器
公开(公告)号：US07861135B2
公开(公告)日：2010-12-28
申请号：US11701956
申请日：2007-02-02
申请人： Byung Jo Kim , Seok Bong Hyun , Seong Su Park , Jae Bum Kim , Hyun Cheol Park , Jong Hyun Seo
发明人： Byung Jo Kim , Seok Bong Hyun , Seong Su Park , Jae Bum Kim , Hyun Cheol Park , Jong Hyun Seo
IPC分类号： H03M13/00
CPC分类号： H03M13/2975 , H03M13/6502 , H03M13/658
摘要： Provided is a turbo decoder with a variable scaling factor. The decoding convergence degree of the turbo decoder is evaluated using a sign difference ratio (SDR) value, the iterative-decoding number is limited, a variable scaling factor is calculated and applied in each decoding convergence area based on the SDR value, and the average number of decoding iterations is reduced.
摘要翻译：提供具有可变比例因子的turbo解码器。使用符号差分比（SDR）值对Turbo解码器的解码收敛度进行评价，对迭代解码数进行限制，根据SDR值计算并应用于每个解码收敛区域的可变比例因子，平均解码迭代次数减少。

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