专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130016565A1 NONVOLATILE MEMORY DEVICE, METHOD OF OPERATING THE SAME AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
标题翻译：非易失存储器件，其操作方法和包括其的电子器件
公开(公告)号：US20130016565A1
公开(公告)日：2013-01-17
申请号：US13479467
申请日：2012-05-24
申请人： Jae-Woo Park , Jung-No Im
发明人： Jae-Woo Park , Jung-No Im
IPC分类号： G11C16/06
CPC分类号： G11C16/3459 , G11C11/5628 , G11C16/0483
摘要： A nonvolatile memory device and a method of operating the same are provided. The method includes performing a plurality of program operations on a plurality of memory cells each to be programmed to one of a plurality of program states, performing a program-verify operation on programmed memory cells associated with each of the plurality of program states, the program-verify operation comprises, selecting one of the plurality of offsets based on a noise level of a common source line associated with a programmed memory cell, using the selected offset to select one of a first verify voltage and a second verify voltage higher than the first verify voltage, and verifying a program state of the programmed memory cell using the first verify voltage and the second verify voltage.
摘要翻译：提供一种非易失性存储器件及其操作方法。该方法包括对多个存储器单元执行多个编程操作，每个存储器单元被编程为多个程序状态中的一个，对与多个程序状态中的每一个相关联的程序存储单元执行程序验证操作，该程序 - 验证操作包括：使用所选择的偏移量，基于与编程的存储器单元相关联的公共源极线的噪声电平来选择所述多个偏移中的一个，以选择第一验证电压和高于所述第一验证电压的第二验证电压验证电压，以及使用第一验证电压和第二验证电压来验证编程的存储器单元的编程状态。

2. 发明授权

US08934305B2 Nonvolatile memory device, method of operating the same and electronic device including the same 有权
标题翻译：非易失存储器件，其操作方法和包括其的电子器件
公开(公告)号：US08934305B2
公开(公告)日：2015-01-13
申请号：US13479467
申请日：2012-05-24
申请人： Jae-Woo Park , Jung-No Im
发明人： Jae-Woo Park , Jung-No Im
IPC分类号： G11C16/34 , G11C16/06 , G11C16/10 , G11C11/56 , G11C16/04
CPC分类号： G11C16/3459 , G11C11/5628 , G11C16/0483
摘要： A nonvolatile memory device and a method of operating the same are provided. The method includes performing a plurality of program operations on a plurality of memory cells each to be programmed to one of a plurality of program states, performing a program-verify operation on programmed memory cells associated with each of the plurality of program states, the program-verify operation comprises, selecting one of the plurality of offsets based on a noise level of a common source line associated with a programmed memory cell, using the selected offset to select one of a first verify voltage and a second verify voltage higher than the first verify voltage, and verifying a program state of the programmed memory cell using the first verify voltage and the second verify voltage.
摘要翻译：提供一种非易失性存储器件及其操作方法。该方法包括对多个存储器单元执行多个编程操作，每个存储器单元被编程为多个程序状态中的一个，对与多个程序状态中的每一个相关联的程序存储单元执行程序验证操作，该程序 - 验证操作包括：使用所选择的偏移量，基于与编程的存储器单元相关联的公共源极线的噪声电平来选择所述多个偏移中的一个，以选择第一验证电压和高于所述第一验证电压的第二验证电压验证电压，以及使用第一验证电压和第二验证电压来验证编程的存储器单元的编程状态。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式