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1. 发明申请

US20120267015A1 Non-Oriented Electrical Steel Sheet Having Superior Magnetic Properties and a Production Method Therefor 审中-公开
标题翻译：具有优异磁性的非取向电工钢板及其制造方法
公开(公告)号：US20120267015A1
公开(公告)日：2012-10-25
申请号：US13514342
申请日：2010-12-28
申请人： Jae-Hoon Kim , Jae-Kwan Kim , Yong-Soo Kim , Won-Seog Bong
发明人： Jae-Hoon Kim , Jae-Kwan Kim , Yong-Soo Kim , Won-Seog Bong
IPC分类号： C21D8/02 , C22C38/06 , C22C38/04 , C22C38/02 , C22B9/00
CPC分类号： C22C38/06 , C21D8/12 , C21D2211/004 , C22C38/001 , C22C38/002 , C22C38/004 , C22C38/008 , C22C38/02 , C22C38/04 , C22C38/14 , C22C38/60 , H01F1/16
摘要： Provided are: a non-oriented electrical steel sheet having outstanding magnetic properties and comprising, as percentages by weight, from 1.0 to 3.0% of Al, from 0.5 to 2.5% of Si, from 0.5 to 2.0% of Mn, from 0.001 to 0.004% of N, from 0.0005 to 0.004% of S and a balance of Fe and other unavoidably incorporated impurities, wherein the Al, Mn, N and S are included so as to satisfy the compositional formulae {[Al]+[Mn]}≦3.5, 0.002≦{[N]+[S]}≦0.006, 300≦{([Al]+[Mn])/([N]+[S])}≦1,400; and a production method therefor. By optimising the Al, Si, Mn, N and S added components in this way, the distribution density of coarse inclusions is increased, thereby making it possible to improve crystal-grain growth properties and domain wall mobility and so produce the highest grade of non-oriented electrical steel sheet having superior magnetic properties, low hardness, and superior customer workability and productivity.
摘要翻译：提供：具有优异的磁特性的非取向电工钢板，以重量百分数计，Al为1.0〜3.0％，Si为0.5〜2.5％，Mn为0.5〜2.0％，0.001〜0.004 N的百分比为0.0005〜0.004％，余量为Fe等不可避免地掺入的杂质，其中包含Al，Mn，N和S以满足组成式{[Al] + [Mn]}＆nlE ; 3.5，0.002＆nlE; {[N] + [S]}＆nlE; 0.006,300＆nlE; {（[Al] + [Mn]）/（[N] + [S]）}＆nlE; 1,400; 及其制造方法。通过以这种方式优化Al，Si，Mn，N和S添加的组分，粗大夹杂物的分布密度增加，从而可以提高晶粒生长性能和畴壁迁移率，从而产生最高等级的非 - 具有优异的磁特性，低硬度和优异的客户可加工性和生产率的电磁钢板。

2. 发明授权

US09260764B2 Low iron loss high strength non-oriented electromagnetic steel sheet and method for manufacturing same 有权
标题翻译：低铁损高强度无取向电磁钢板及其制造方法
公开(公告)号：US09260764B2
公开(公告)日：2016-02-16
申请号：US13824082
申请日：2011-12-22
申请人： Jae-Song Kim , Jae-Kwan Kim , Su-Yong Sin , Yong-Soo Kim
发明人： Jae-Song Kim , Jae-Kwan Kim , Su-Yong Sin , Yong-Soo Kim
IPC分类号： C21D8/12 , C22C38/02 , C22C38/04 , C22C38/40 , C21D8/02 , C22C38/00 , C22C38/06 , C22C38/14 , H01F1/01
CPC分类号： C21D8/0273 , C21D8/1244 , C21D8/1272 , C21D2201/05 , C22C38/001 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/14 , H01F1/01
摘要： Provided is a low iron loss high strength non-oriented electromagnetic steel sheet and a method for manufacturing the same. The method comprises hot-rolling a slab comprising 0.005 weight % or less of C, 4.0 weight % or less of Si, 0.1 weight % or less of P, 0.03 weight % or less of S, 0.1 to 2.0 weight % of Mn, 0.3 to 2.0 weight % of Al, 0.003 weight % or less of N, 0.005 weight % or less of Ti, the remainder being Fe and unavoidable impurities, cold-rolling the slab, and finally annealing the slab such that the fractional area of the non-recrystallization tissue at the cross sectional surface of the steel sheet is 50% or lower (not including 0%).
摘要翻译：本发明提供一种低铁损高强度无取向电磁钢板及其制造方法。该方法包括将C：0.005重量％以下，Si 4.0重量％以下，P：0.1重量％以下，S：0.03重量％以下，S：0.1〜2.0重量％，Mn：0.3 至2.0重量％的Al，0.003重量％以下的N，0.005重量％以下的Ti，余量为Fe和不可避免的杂质，冷轧板坯，最后对板坯进行退火，在钢板的横截面上的再结晶组织为50％以下（不包括0％）。

3. 发明申请

US20130167987A1 Low Iron Loss High Strength Non-Oriented Electromagnetic Steel Sheet and Method for Manufacturing Same 有权
标题翻译：低铁损高强度非定向电磁钢板及其制造方法
公开(公告)号：US20130167987A1
公开(公告)日：2013-07-04
申请号：US13824082
申请日：2011-12-22
申请人： Jae-Song Kim , Jae-Kwan Kim , Su-Yong Sin , Yong-Soo Kim
发明人： Jae-Song Kim , Jae-Kwan Kim , Su-Yong Sin , Yong-Soo Kim
IPC分类号： C21D8/02 , H01F1/01
CPC分类号： C21D8/0273 , C21D8/1244 , C21D8/1272 , C21D2201/05 , C22C38/001 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/14 , H01F1/01
摘要： Provided is a low iron loss high strength non-oriented electromagnetic steel sheet and a method for manufacturing the same. The method comprises hot-rolling a slab comprising 0.005 weight % or less of C, 4.0 weight % or less of Si, 0.1 weight % or less of P, 0.03 weight % or less of S, 0.1 to 2.0 weight % of Mn, 0.3 to 2.0 weight % of Al, 0.003 weight % or less of N, 0.005 weight % or less of Ti, the remainder being Fe and unavoidable impurities, cold-rolling the slab, and finally annealing the slab such that the fractional area of the non-recrystallization tissue at the cross sectional surface of the steel sheet is 50% or lower (not including 0%).
摘要翻译：本发明提供一种低铁损高强度无取向电磁钢板及其制造方法。该方法包括将C：0.005重量％以下，Si 4.0重量％以下，P：0.1重量％以下，S：0.03重量％以下，S：0.1〜2.0重量％，Mn：0.3 至2.0重量％的Al，0.003重量％以下的N，0.005重量％以下的Ti，余量为Fe和不可避免的杂质，冷轧板坯，最后对板坯进行退火，在钢板的横截面上的再结晶组织为50％以下（不包括0％）。

4. 发明授权

US08963205B2 Method for fabricating a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08963205B2
公开(公告)日：2015-02-24
申请号：US12165164
申请日：2008-06-30
申请人： Yong-Soo Kim , Jun-Ki Kim , Se-Aug Jang
发明人： Yong-Soo Kim , Jun-Ki Kim , Se-Aug Jang
IPC分类号： H01L29/66 , H01L29/10 , H01L21/8238 , H01L29/78
CPC分类号： H01L29/1054 , H01L21/823807 , H01L29/66651 , H01L29/7843
摘要： A transistor of a semiconductor device includes a substrate, a gate over the substrate, a source/drain region formed in the substrate to have a channel region therebetween, and an epitaxial layer formed below the channel region to have a different lattice constant from the substrate. The epitaxial layer having a different lattice constant with a substrate material is formed below the channel region to apply a stress to the channel region. Thus, the mobility of carriers of the transistor increases.
摘要翻译：半导体器件的晶体管包括衬底，衬底上的栅极，形成在衬底中以在其间具有沟道区的源极/漏极区和形成在沟道区下方的与衬底不同的晶格常数的外延层。在沟道区的下方形成具有与衬底材料不同的晶格常数的外延层，以对沟道区施加应力。因此，晶体管的载流子的迁移率增加。

5. 发明申请

US20120258946A1 Substituted Phenylureas and Phenylamides as Vanilloid Receptor Ligands 有权
标题翻译：取代苯基和苯基酰胺作为香草素受体配体
公开(公告)号：US20120258946A1
公开(公告)日：2012-10-11
申请号：US13292563
申请日：2011-11-09
申请人： Robert FRANK , Gregor Bahrenberg , Thomas Christoph , Klaus Schiene , Jean De Vry , Nils Damann , Sven Frormann , Bernhard Lesch , Derek John Saunders , Jeewoo Lee , Yong-Soo Kim , Myeong-Seop Kim , Hannelore Stockhausen
发明人： Robert FRANK , Gregor Bahrenberg , Thomas Christoph , Klaus Schiene , Jean De Vry , Nils Damann , Sven Frormann , Bernhard Lesch , Derek John Saunders , Jeewoo Lee , Yong-Soo Kim , Myeong-Seop Kim , Hannelore Stockhausen
IPC分类号： A61K31/415 , C07D405/12 , A61K31/4155 , C07D417/12 , A61K31/427 , C07D403/12 , A61P25/00 , A61P25/28 , A61P25/16 , A61P25/14 , A61P11/00 , A61P11/06 , A61P11/08 , A61P29/00 , A61P3/04 , A61P25/36 , C07D231/12
CPC分类号： C07D417/12 , A61K31/415 , A61K31/4155 , A61K31/427 , C07D231/12 , C07D249/08 , C07D403/12 , C07D405/12
摘要： Substituted phenylureas and phenylamides, processes for their preparation, pharmaceutical compositions containing these compounds, and the use of these compounds for preparing pharmaceutical compositions.
摘要翻译：取代的苯基脲和苯基酰胺，其制备方法，含有这些化合物的药物组合物，以及这些化合物用于制备药物组合物的用途。

6. 发明申请

US20110186920A1 SEMICONDUCTOR DEVICE WITH GATE STACK STRUCTURE 有权
标题翻译：具有栅格堆叠结构的半导体器件
公开(公告)号：US20110186920A1
公开(公告)日：2011-08-04
申请号：US13043385
申请日：2011-03-08
申请人： Kwan-Yong LIM , Hong-Seon Yang , Heung-Jae Cho , Tae-Kyung Kim , Yong-Soo Kim , Min-Gyu Sung
发明人： Kwan-Yong LIM , Hong-Seon Yang , Heung-Jae Cho , Tae-Kyung Kim , Yong-Soo Kim , Min-Gyu Sung
IPC分类号： H01L29/788
CPC分类号： H01L29/4925 , H01L21/28061 , H01L29/42324 , H01L29/4941 , H01L29/513 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.
摘要翻译：半导体器件包括第一导电层，第一导电层上的第一中间结构，第一中间结构之上的第二中间结构以及第二中间结构上的第二导电层。第一中间结构包括金属硅化物层和含氮金属层。第二中间结构至少包括含氮金属硅化物层。

7. 发明授权

US07968912B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07968912B2
公开(公告)日：2011-06-28
申请号：US12749176
申请日：2010-03-29
申请人： Yong-Soo Kim , Hong-Seon Yang , Seung-Ho Pyi , Tae-Hang Ahn
发明人： Yong-Soo Kim , Hong-Seon Yang , Seung-Ho Pyi , Tae-Hang Ahn
IPC分类号： H01L29/78 , H01L27/12
CPC分类号： H01L29/0847 , H01L21/18 , H01L29/165 , H01L29/66636 , H01L29/7848
摘要： A semiconductor device includes a substrate, a gate formed over the substrate, a gate spacer provided against first and second sidewalls of the gate, and a source/drain region formed in the substrate proximate to the gate spacer. The source/drain region includes first and second epitaxial layers including Ge, wherein the second epitaxial layer which is formed over an interfacial layer between the first epitaxial layer and the substrate has a higher germanium concentration than that of the first epitaxial layer.
摘要翻译：半导体器件包括衬底，形成在衬底上的栅极，设置在栅极的第一和第二侧壁上的栅极间隔，以及形成在靠近栅极间隔物的衬底中的源/漏区。源极/漏极区包括包括Ge的第一和第二外延层，其中在第一外延层和衬底之间的界面层上形成的第二外延层具有比第一外延层更高的锗浓度。

8. 发明授权

US07861899B2 Dispenser 失效
标题翻译：分配器
公开(公告)号：US07861899B2
公开(公告)日：2011-01-04
申请号：US11794561
申请日：2005-06-10
申请人： Yong-Soo Kim
发明人： Yong-Soo Kim
IPC分类号： B65D43/00
CPC分类号： B05B7/2427 , A45D2200/057 , B65D83/205 , B65D83/48 , Y02W30/807
摘要： A single-use dispenser using air pressure and includes an outer vessel in which air and content material are charged, a fixed body coupled to an open upper end of the outer vessel, a valve installed in the fixed body for selectively dispensing the content material using pressurized air, and a push button coupled to a top of the valve for pushing the valve, thereby spraying out the content material and air, wherein the valve includes a hollow body, a hollow valve body elastically supported to a top of the body and moving into and out of a hollow of the body, a packing member installed on the valve body for blocking an orifice pipe, and an air suction hole formed to penetrate the body for supplementing air pressure of the outer vessel.
摘要翻译：使用空气压力的一次性使用的分配器，并且包括外部容器，其中空气和内容物质被装入其中;固定体，其联接到外部容器的敞开的上端;安装在固定体中的阀，用于使用加压空气和联接到阀的顶部的按钮，用于推动阀，从而喷射内容物和空气，其中阀包括中空体，弹性地支撑到身体顶部并移动的中空阀体进入和离开身体的中空部，安装在阀体上用于阻塞孔口管的包装件，以及形成为穿透身体以补充外部容器的空气压力的空气吸入孔。

9. 发明授权

US07781333B2 Semiconductor device with gate structure and method for fabricating the semiconductor device 失效
标题翻译：具有栅极结构的半导体器件和用于制造半导体器件的方法
公开(公告)号：US07781333B2
公开(公告)日：2010-08-24
申请号：US11765546
申请日：2007-06-20
申请人： Min-Gyu Sung , Hong-Seon Yang , Heung-Jae Cho , Yong-Soo Kim , Kwan-Yong Lim
发明人： Min-Gyu Sung , Hong-Seon Yang , Heung-Jae Cho , Yong-Soo Kim , Kwan-Yong Lim
IPC分类号： H01L21/4763
CPC分类号： H01L21/28061 , H01L21/324 , H01L21/823835 , H01L21/823842 , H01L29/4941
摘要： A gate structure of a semiconductor device includes an intermediate structure, wherein the intermediate structure includes a titanium layer and a tungsten silicide layer. A method for forming a gate structure of a semiconductor device includes forming a polysilicon-based electrode. An intermediate structure, which includes a titanium layer and a tungsten silicide layer, is formed over the polysilicon-based electrode. A metal electrode is formed over the intermediate structure.
摘要翻译：半导体器件的栅极结构包括中间结构，其中中间结构包括钛层和硅化钨层。一种用于形成半导体器件的栅极结构的方法包括形成多晶硅基电极。在多晶硅基电极上形成包括钛层和硅化钨层的中间结构。在中间结构上形成金属电极。

10. 发明授权

US07713823B2 Semiconductor device with vertical channel transistor and method for fabricating the same 有权
标题翻译：具有垂直沟道晶体管的半导体器件及其制造方法
公开(公告)号：US07713823B2
公开(公告)日：2010-05-11
申请号：US12164067
申请日：2008-06-29
申请人： Min-Gyu Sung , Heung-Jae Cho , Yong-Soo Kim , Kwan-Yong Lim , Se-Aug Jang
发明人： Min-Gyu Sung , Heung-Jae Cho , Yong-Soo Kim , Kwan-Yong Lim , Se-Aug Jang
IPC分类号： H01L21/8236
CPC分类号： H01L29/66666 , H01L27/10876 , H01L27/10891 , H01L29/7827
摘要： In a high speed vertical channel transistor, a pillar structure is formed over a substrate, a gate electrode surrounds an outer wall of a lower portion of the pillar structure; and a word line extends in a direction to partially contact an outer wall of the gate electrode. The word line shifts toward a side of the pillar structure resulting in increased transistor speed.
摘要翻译：在高速垂直沟道晶体管中，在衬底上形成柱结构，栅电极围绕柱结构的下部的外壁; 并且字线在与栅电极的外壁部分接触的方向上延伸。字线向柱结构的一侧移动，导致晶体管速度增加。

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