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1. 发明申请

US20110195010A1 Method of forming InP quantum dot and InP quantum dot formed by the same 审中-公开
标题翻译：形成InP量子点和由其形成的InP量子点的方法
公开(公告)号：US20110195010A1
公开(公告)日：2011-08-11
申请号：US12807344
申请日：2010-09-01
申请人： Jae il Kim , Seung Mi Lee , Mi Yang Kim
发明人： Jae il Kim , Seung Mi Lee , Mi Yang Kim
IPC分类号： C01B25/00 , B82Y20/00
CPC分类号： C01B25/082 , B82Y40/00
摘要： Disclosed herein is a method of forming a spherical InP quantum dot, including: providing a compound containing indium (In); dissolving the compound in alcohol to form a solution; and introducing a compound containing phosphorus (P) into the solution. The method is advantageous because a spherical InP quantum dot can be formed, the method is environment-friendly because alcohol is used as a solvent, because InP quantum dots can be produced in large quantities because the InP quantum dots can be formed while putting all reactants into a reactor and slowly heating the reactants, and because the desired InP quantum dots can be easily recovered by decreasing the temperature of a reactor or by performing centrifugal separation at low speed.
摘要翻译：本文公开了形成球形InP量子点的方法，包括：提供含铟（In）的化合物; 将化合物溶解在醇中以形成溶液; 并将含磷（P）的化合物引入溶液中。该方法是有利的，因为可以形成球形InP量子点，因为使用醇作为溶剂，该方法是环境友好的，因为可以大量生成InP量子点，因为可以在放入所有反应物的同时形成InP量子点进入反应器并缓慢加热反应物，并且因为通过降低反应器的温度或通过低速进行离心分离可以容易地回收所需的InP量子点。

2. 发明授权

US08003501B2 Method of doping P-type impurity ions in dual poly gate and method of forming dual poly gate using the same 失效
标题翻译：在双重多晶硅栅极中掺杂P型杂质离子的方法和使用其形成双重多晶硅栅的方法
公开(公告)号：US08003501B2
公开(公告)日：2011-08-23
申请号：US12650833
申请日：2009-12-31
申请人： Kyoung Bong Rouh , Seung Mi Lee
发明人： Kyoung Bong Rouh , Seung Mi Lee
IPC分类号： H01L21/42 , H01L21/425
CPC分类号： H01L21/28035 , H01L21/2236 , H01L21/32155 , H01L21/823842
摘要： A method of doping p-type impurity ions in a dual poly gate, comprising: forming a polysilicon layer doped with n-type impurity ions on a substrate with a gate insulation layer being interposed between the polysilicon layer and the substrate; exposing a region of the polysilicon layer; implementing a first doping of p-type impurity ions into the exposed region of the polysilicon layer by ion implantation so with a projection range Rp to a predetermined depth of the polysilicon layer; and implementing a second doping of p-type impurity ions into the exposed region of the polysilicon layer doped with the p-type impurity ions by plasma doping with a sloped doping profile.
摘要翻译：一种在双重多晶硅栅极中掺杂p型杂质离子的方法，包括：在衬底上形成掺杂n型杂质离子的多晶硅层，其中栅极绝缘层介于多晶硅层和衬底之间; 暴露多晶硅层的区域; 通过离子注入实现p型杂质离子的第一掺杂进入多晶硅层的暴露区域，使投影范围Rp达到多晶硅层的预定深度; 以及通过具有倾斜掺杂分布的等离子体掺杂，将p型杂质离子第二次掺杂到掺杂有p型杂质离子的多晶硅层的暴露区域中。

3. 发明授权

US09125687B2 Amniotic fluid collector 有权
标题翻译：羊水收集器
公开(公告)号：US09125687B2
公开(公告)日：2015-09-08
申请号：US13639600
申请日：2011-04-05
申请人： Bo Hyun Yoon , Chan Wook Park , Seung Mi Lee , Joong Shin Park
发明人： Bo Hyun Yoon , Chan Wook Park , Seung Mi Lee , Joong Shin Park
IPC分类号： A61B17/42 , A61B10/00 , A61M1/00
CPC分类号： A61B17/4208 , A61B10/0045 , A61B10/0048 , A61M1/0009
摘要： According to the present invention, an amniotic fluid collector is configured so as to be inserted and positioned inside the vagina of a birthing mother in order to collect amniotic fluid from the womb of the birthing mother. In particular, the amniotic fluid collector of the present invention comprises: a receiving member, in the side of which an opening is defined, which is inserted into the vagina of the birthing mother and which has a receptacle defined therein for receiving the amniotic fluid; and a positioning portion for positioning the receiving member inside the vagina. Thus, the effects of alleviating pain and psychological anxiety of a birthing mother and eliminating the danger of the occurrence of complications can be achieved, as well as those of easily and smoothly collecting amniotic fluid from the womb of the birthing mother.
摘要翻译：根据本发明，羊水收集器被构造为插入并定位在分娩母亲的阴道内部，以从分娩母亲的子宫收集羊水。特别地，本发明的羊水收集器包括：接收构件，其侧面限定开口，其被插入到分娩母亲的阴道中，并且具有限定在其中的用于接收羊水的容器; 以及用于将所述接收构件定位在所述阴道内的定位部。因此，可以实现减轻分娩母亲的疼痛和心理焦虑，消除并发症发生的危险的效果，以及从分娩母亲子宫容易且顺利收集羊水的效果。

4. 发明申请

US20100285642A1 Method of Doping Impurity Ions in Dual Gate and Method of Fabricating the Dual Gate using the same 审中-公开
标题翻译：双门掺杂杂质离子的方法及其制作方法
公开(公告)号：US20100285642A1
公开(公告)日：2010-11-11
申请号：US12558215
申请日：2009-09-11
申请人： Kyoung Bong Rouh , Yun Hyuck Ji , Tae Kyun Kim , Woo Sung Kim , Seung Mi Lee
发明人： Kyoung Bong Rouh , Yun Hyuck Ji , Tae Kyun Kim , Woo Sung Kim , Seung Mi Lee
IPC分类号： H01L21/8238
CPC分类号： H01L21/823842
摘要： A method of doping impurity ions in a dual gate includes doping first conductivity type impurity ions in a gate conductive layer over a semiconductor substrate having a first region and a second region, wherein the doping is performed with a concentration gradient so that a doping concentration in an upper portion of the gate conductive layer is higher than that in a lower portion; doping second conductivity type impurity ions in a portion of the gate conductive layer in the second region using a mask for opening the portion of the gate conductive layer in the second region; and diffusing the first conductivity type impurity ions and the second conductivity type impurity ions by performing heat treatment.
摘要翻译：在双栅极中掺杂杂质离子的方法包括在具有第一区域和第二区域的半导体衬底上的栅极导电层中掺杂第一导电型杂质离子，其中以浓度梯度进行掺杂，使得掺杂浓度栅极导电层的上部比下部高; 在第二区域中的栅极导电层的一部分中掺杂第二导电型杂质离子，使用掩模，用于在第二区域中打开栅极导电层的部分; 并通过进行热处理使第一导电型杂质离子和第二导电型杂质离子扩散。

5. 发明申请

US20130030325A1 AMNIOTIC FLUID COLLECTOR 有权
标题翻译：生物流体收集器
公开(公告)号：US20130030325A1
公开(公告)日：2013-01-31
申请号：US13639600
申请日：2011-04-05
申请人： Bo Hyun Yoon , Chan Wook Park , Seung Mi Lee , Joong Shin Park
发明人： Bo Hyun Yoon , Chan Wook Park , Seung Mi Lee , Joong Shin Park
IPC分类号： A61B5/00
CPC分类号： A61B17/4208 , A61B10/0045 , A61B10/0048 , A61M1/0009
摘要： According to the present invention, an amniotic fluid collector is configured so as to be inserted and positioned inside the vagina of a birthing mother in order to collect amniotic fluid from the womb of the birthing mother. In particular, the amniotic fluid collector of the present invention comprises: a receiving member, in the side of which an opening is defined, which is inserted into the vagina of the birthing mother and which has a receptacle defined therein for receiving the amniotic fluid; and a positioning portion for positioning the receiving member inside the vagina. Thus, the effects of alleviating pain and psychological anxiety of a birthing mother and eliminating the danger of the occurrence of complications can be achieved, as well as those of easily and smoothly collecting amniotic fluid from the womb of the birthing mother.
摘要翻译：根据本发明，羊水收集器被构造为插入并定位在分娩母亲的阴道内部，以从分娩母亲的子宫收集羊水。特别地，本发明的羊水收集器包括：接收构件，其侧面限定开口，其被插入到分娩母亲的阴道中，并且具有限定在其中的用于接收羊水的容器; 以及用于将所述接收构件定位在所述阴道内的定位部。因此，可以实现减轻分娩母亲的疼痛和心理焦虑，消除并发症发生的危险的效果，以及从分娩母亲子宫容易且顺利收集羊水的效果。

6. 发明申请

US20100317180A1 Method of Doping P-type Impurity Ions in Dual Poly Gate and Method of Forming Dual Poly Gate Using the Same 失效
标题翻译：双聚门中掺杂P型杂质离子的方法及其使用双聚合门的方法
公开(公告)号：US20100317180A1
公开(公告)日：2010-12-16
申请号：US12650833
申请日：2009-12-31
申请人： Kyoung Bong Rouh , Seung Mi Lee
发明人： Kyoung Bong Rouh , Seung Mi Lee
IPC分类号： H01L21/28
CPC分类号： H01L21/28035 , H01L21/2236 , H01L21/32155 , H01L21/823842
摘要： A method of doping p-type impurity ions in a dual poly gate, comprising: forming a polysilicon layer doped with n-type impurity ions on a substrate with a gate insulation layer being interposed between the polysilicon layer and the substrate; exposing a region of the polysilicon layer; implementing a first doping of p-type impurity ions into the exposed region of the polysilicon layer by ion implantation so with a projection range Rp to a predetermined depth of the polysilicon layer; and implementing a second doping of p-type impurity ions into the exposed region of the polysilicon layer doped with the p-type impurity ions by plasma doping with a sloped doping profile.
摘要翻译：一种在双重多晶硅栅极中掺杂p型杂质离子的方法，包括：在衬底上形成掺杂n型杂质离子的多晶硅层，其中栅极绝缘层介于多晶硅层和衬底之间; 暴露多晶硅层的区域; 通过离子注入实现p型杂质离子的第一掺杂进入多晶硅层的暴露区域，使投影范围Rp达到多晶硅层的预定深度; 以及通过具有倾斜掺杂分布的等离子体掺杂，将p型杂质离子第二次掺杂到掺杂有p型杂质离子的多晶硅层的暴露区域中。

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