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1. 发明申请

US20140231859A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件
公开(公告)号：US20140231859A1
公开(公告)日：2014-08-21
申请号：US14236582
申请日：2011-08-01
申请人： Jae Yoon Kim , Seok Min Hwang , Su Yeol Lee , Seung Wan Chae , Jae Ho Han , Jin Bock Lee
发明人： Jae Yoon Kim , Seok Min Hwang , Su Yeol Lee , Seung Wan Chae , Jae Ho Han , Jin Bock Lee
IPC分类号： H01L33/38 , H01L33/62 , H01L33/32
CPC分类号： H01L33/387 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A semiconductor light emitting device may include: a light emitting structure including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed therebetween; a first electrode connected to one of the n-type semiconductor layer and the p-type semiconductor layer; and a second electrode connected to the other of the n-type semiconductor layer and the p-type semiconductor layer. The first electrode may include a first electrode pad disposed in a central portion of one side of the light emitting structure and first to third branch electrodes connected to the first electrode pad, having a fork shape. The second electrode may include second and third electrode pads disposed separately in both corners of the other side opposing the one side and fourth to seventh branch electrodes connected thereto. The fourth and seventh branch electrodes may extend in an interdigitated manner between the first to third branch electrodes.
摘要翻译：半导体发光器件可以包括：包含n型半导体层，p型半导体层和插入其间的有源层的发光结构; 连接到所述n型半导体层和所述p型半导体层之一的第一电极; 以及与n型半导体层和p型半导体层中的另一方连接的第二电极。第一电极可以包括设置在发光结构的一侧的中心部分中的第一电极焊盘和连接到具有叉形状的第一电极焊盘的第一至第三分支电极。第二电极可以包括分别位于与一侧相对的另一侧的两个角部和与其连接的第四至第七分支电极的第二和第三电极焊盘。第四和第七分支电极可以在第一至第三分支电极之间以叉指方式延伸。

2. 发明授权

US08969895B2 Semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08969895B2
公开(公告)日：2015-03-03
申请号：US13225979
申请日：2011-09-06
申请人： Jae Yoon Kim , Jin Bock Lee , Seok Min Hwang , Su Yeol Lee
发明人： Jae Yoon Kim , Jin Bock Lee , Seok Min Hwang , Su Yeol Lee
IPC分类号： H01L33/00 , H01L33/40 , H01L33/38 , H01L33/42 , H01L33/32
CPC分类号： H01L33/005 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/42 , H01L2933/0016 , H01L2933/0058
摘要： A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.
摘要翻译：一种半导体发光器件包括：发光结构，其中第一导电半导体层，有源层和第二导电半导体层依次层叠; 形成在所述第一导电半导体层上的第一电极; 形成在所述第二导电半导体层上并由透明材料制成的绝缘层; 反射单元，形成在所述绝缘层上并反射从所述有源层发射的光; 形成在反射单元上的第二电极; 以及形成在所述第二导电半导体层上的透明电极，所述透明电极与所述绝缘层和所述第二电极接触。

3. 发明申请

US20120098009A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120098009A1
公开(公告)日：2012-04-26
申请号：US13225979
申请日：2011-09-06
申请人： Jae Yoon KIM , Jin Bock Lee , Seok Min Hwang , Su Yeol Lee
发明人： Jae Yoon KIM , Jin Bock Lee , Seok Min Hwang , Su Yeol Lee
IPC分类号： H01L33/60 , H01L33/42
CPC分类号： H01L33/005 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/42 , H01L2933/0016 , H01L2933/0058
摘要： A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.
摘要翻译：一种半导体发光器件包括：发光结构，其中第一导电半导体层，有源层和第二导电半导体层依次层叠; 形成在所述第一导电半导体层上的第一电极; 形成在所述第二导电半导体层上并由透明材料制成的绝缘层; 反射单元，形成在所述绝缘层上并反射从所述有源层发射的光; 形成在反射单元上的第二电极; 以及形成在所述第二导电半导体层上的透明电极，所述透明电极与所述绝缘层和所述第二电极接触。

4. 发明申请

US20140191194A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：氮化物半导体发光元件
公开(公告)号：US20140191194A1
公开(公告)日：2014-07-10
申请号：US14237513
申请日：2011-08-09
申请人： Seok Min Hwang , Jae Ho Han , Jae Yoon Kim , Hae Soo Ha , Su Yeol Lee , Je Won Kim
发明人： Seok Min Hwang , Jae Ho Han , Jae Yoon Kim , Hae Soo Ha , Su Yeol Lee , Je Won Kim
IPC分类号： H01L33/24 , H01L33/06
CPC分类号： H01L33/20 , H01L33/14
摘要： There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.
摘要翻译：提供一种氮化物半导体发光器件，其能够通过纹理效果提高光提取效率，并且包括：发光结构，形成在基板上，并且包括第一导电型氮化物半导体层和第二导电型氮化物半导体层其间插入有源层; 电连接到第一导电型氮化物半导体层的第一电极; 电连接到第二导电型氮化物半导体层的第二电极; 以及设置在所述第一电极和所述第二电极之间并且包括通过垂直穿透所述发光结构而形成的多个通孔的光提取图案。

5. 发明授权

US08610162B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08610162B2
公开(公告)日：2013-12-17
申请号：US13286807
申请日：2011-11-01
申请人： Seok Min Hwang , Jae Yoon Kim , Jin Bock Lee
发明人： Seok Min Hwang , Jae Yoon Kim , Jin Bock Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/42 , H01L2933/0016
摘要： A semiconductor light emitting device includes: first and second conductive type semiconductor layers; an active layer disposed between the first and second conductive type semiconductor layers; and first and second electrodes disposed on one surface of each of the first and second conductive type semiconductor layers, respectively, wherein at least one of the first and second electrodes includes a pad part and a finger part formed to extend from the pad part, and the end of the finger part has an annular shape. Because a phenomenon in which current is concentrated in a partial area of the finger part is minimized, tolerance to electrostatic discharge (ESD) can be strengthened and light extraction efficiency can be improved.
摘要翻译：半导体发光器件包括：第一和第二导电类型半导体层; 设置在所述第一和第二导电类型半导体层之间的有源层; 以及分别设置在每个第一和第二导电类型半导体层的一个表面上的第一和第二电极，其中第一和第二电极中的至少一个包括衬垫部分和形成为从衬垫部分延伸的指状部分，以及手指部分的端部具有环形形状。由于电流集中在手指部分的部分区域的现象最小化，因此可以增强对静电放电（ESD）的耐受性，并且可以提高光提取效率。

6. 发明授权

US09130125B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09130125B2
公开(公告)日：2015-09-08
申请号：US14237461
申请日：2011-08-17
申请人： Seok Min Hwang , Hae Soo Ha , Jae Yoon Kim , Jae Ho Han
发明人： Seok Min Hwang , Hae Soo Ha , Jae Yoon Kim , Jae Ho Han
IPC分类号： H01L33/38 , H01L33/20
CPC分类号： H01L33/38 , H01L33/20
摘要： A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode.
摘要翻译：半导体发光器件可以包括n型半导体层，有源层和p型半导体层，其设置在与n型半导体层的上表面的一部分对应的第一区域中，n型电极形成在与n型半导体层上的与n型半导体层电连接的第一区域不同的第二区域中，并且包括n型电极焊盘和第一和第n型电极指，形成在p型半导体层上以与p型半导体层电连接并且包括p型电极焊盘和p型电极指的p型电极。 n型和p型电极之间的距离可以是恒定的，以显着减少电极的特定区域中的电流浓度的现象。

7. 发明申请

US20140175503A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20140175503A1
公开(公告)日：2014-06-26
申请号：US14237461
申请日：2011-08-17
申请人： Seok Min Hwang , Hae Soo Ha , Jae Yoon Kim , Jae Ho Han
发明人： Seok Min Hwang , Hae Soo Ha , Jae Yoon Kim , Jae Ho Han
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , H01L33/20
摘要： A semiconductor light emitting device may include an n-type semiconductor layer, an active layer and a p-type semiconductor layer disposed in a first region corresponding to a portion of an upper surface of the n-type semiconductor layer, an n-type electrode formed in a second region distinct from the first region on the n-type semiconductor layer to be electrically connected to the n-type semiconductor layer and including an n-type electrode pad and first and second n-type electrode fingers, and a p-type electrode formed on the p-type semiconductor layer to be electrically connected to the p-type semiconductor layer and including a p-type electrode pad and a p-type electrode finger. A distance between n-type and p-type electrodes may be constant to significantly reduce a phenomenon of concentration of a current in a specific region of an electrode.
摘要翻译：半导体发光器件可以包括n型半导体层，有源层和p型半导体层，其设置在与n型半导体层的上表面的一部分对应的第一区域中，n型电极形成在与n型半导体层上的与n型半导体层电连接的第一区域不同的第二区域中，并且包括n型电极焊盘和第一和第n型电极指，形成在p型半导体层上以与p型半导体层电连接并且包括p型电极焊盘和p型电极指的p型电极。 n型和p型电极之间的距离可以是恒定的，以显着减少电极的特定区域中的电流浓度的现象。

8. 发明申请

US20090166669A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20090166669A1
公开(公告)日：2009-07-02
申请号：US12251782
申请日：2008-10-15
申请人： Je Won Kim , Yong Chun Kim , Sang Won Kang , Seok Min Hwang , Seung Wan Chae
发明人： Je Won Kim , Yong Chun Kim , Sang Won Kang , Seok Min Hwang , Seung Wan Chae
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L33/025
摘要： A nitride semiconductor light emitting device and a method of manufacturing the same, which can prevent crystal defects such as dislocation while ensuring uniform current spreading into an active layer. The nitride semiconductor light emitting device includes a first n-nitride semiconductor layer formed on a substrate, a first intermediate pattern layer formed on the first n-nitride semiconductor layer, the first intermediate pattern layer having a nanoscale dot structure made of Si compound, a second n-nitride semiconductor layer formed on the first n-nitride semiconductor layer, a second intermediate pattern layer formed on the second n-nitride semiconductor layer, the second intermediate pattern layer having a nanoscale dot structure made of Si compound, which is electrically insulating, a third n-nitride semiconductor layer formed on the second n-nitride semiconductor layer, an active layer formed on the third n-nitride semiconductor layer, and a p-nitride semiconductor layer formed on the active layer.
摘要翻译：一种氮化物半导体发光器件及其制造方法，其可以在确保均匀的电流扩展到有源层的同时防止诸如位错之类的晶体缺陷。氮化物半导体发光器件包括形成在衬底上的第一氮化物半导体层，形成在第一氮化物半导体层上的第一中间图案层，具有由Si化合物制成的纳米级点结构的第一中间图案层，形成在所述第一氮化物半导体层上的第二氮化物半导体层，形成在所述第二氮化物半导体层上的第二中间图案层，所述第二中间图案层具有由Si化合物制成的纳米级点结构，所述第二中间图案层是电绝缘的形成在第二氮化物半导体层上的第三氮化物半导体层，形成在第三氮化物半导体层上的有源层和形成在有源层上的p型氮化物半导体层。

9. 发明申请

US20080210972A1 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20080210972A1
公开(公告)日：2008-09-04
申请号：US12003276
申请日：2007-12-21
申请人： Kun Yoo Ko , Je Won Kim , Dong Woo Kim , Hyng Jin Park , Seok Min Hwang , Seung Wan Chae
发明人： Kun Yoo Ko , Je Won Kim , Dong Woo Kim , Hyng Jin Park , Seok Min Hwang , Seung Wan Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/42
摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.
摘要翻译：提供一种包含基板的氮化物系半导体LED，形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

10. 发明授权

US08110847B2 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US08110847B2
公开(公告)日：2012-02-07
申请号：US12003276
申请日：2007-12-21
申请人： Kun Yoo Ko , Je Won Kim , Dong Woo Kim , Hyung Jin Park , Seok Min Hwang , Seung Wan Chae
发明人： Kun Yoo Ko , Je Won Kim , Dong Woo Kim , Hyung Jin Park , Seok Min Hwang , Seung Wan Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/42
摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.
摘要翻译：提供一种包含基板的氮化物系半导体LED，形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

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