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1. 发明申请

US20060033113A1 Nitride semiconductor light emitting diode and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体发光二极管及其制造方法
公开(公告)号：US20060033113A1
公开(公告)日：2006-02-16
申请号：US11064968
申请日：2005-02-25
申请人： Jae Lee , In Kim , Yong Kim , Hyun Kim , Moon Kong
发明人： Jae Lee , In Kim , Yong Kim , Hyun Kim , Moon Kong
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/32 , H01L33/405 , H01L33/46
摘要： The present invention provides a flip chip-type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.
摘要翻译：本发明提供一种倒装芯片型氮化物半导体发光二极管。氮化物半导体发光二极管包括透光性基板，n型氮化物半导体层，有源层，p型氮化物半导体层和网状DBR反射层。网状DBR反射层具有多个开放区域。网状DBR反射层由具有不同Al含量的第一和第二氮化物层组成。第一和第二氮化物层交替堆叠几次以形成网状DBR反射层。在网状DBR反射层和p型氮化物半导体层上形成欧姆接触层。

2. 发明申请

US20060225644A1 Vertical group III-nitride light emitting device and method for manufacturing the same 审中-公开
标题翻译：垂直III族氮化物发光器件及其制造方法
公开(公告)号：US20060225644A1
公开(公告)日：2006-10-12
申请号：US11398713
申请日：2006-04-06
申请人： Jae Lee , Yong Kim , Hyung Back , Moon Kong , Dong Kim
发明人： Jae Lee , Yong Kim , Hyung Back , Moon Kong , Dong Kim
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/32
摘要： A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.
摘要翻译：提供了垂直III族氮化物发光器件及其制造方法。发光器件包括：导电衬底; 层叠在导电性基板上的p型覆层; 堆叠在p型覆盖层上的有源层; 层叠在有源层上的n掺杂的Al x Ga y In 1 N x N y N n层; 堆叠在n掺杂层上的未掺杂的GaN层; 以及形成在未掺杂的GaN层上的n电极。未掺杂的GaN层在其顶表面上形成粗糙图案。

3. 发明申请

US20060234408A1 Method for manufacturing vertical group III-nitride light emitting device 有权
标题翻译：垂直III族氮化物发光器件的制造方法
公开(公告)号：US20060234408A1
公开(公告)日：2006-10-19
申请号：US11401329
申请日：2006-04-11
申请人： Jae Lee , Yong Kim , Hyung Back , Moon Kong , Dong Kim
发明人： Jae Lee , Yong Kim , Hyung Back , Moon Kong , Dong Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/20 , H01L33/405 , H01L2933/0083
摘要： The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.
摘要翻译：本发明提供一种提高外部提取效率的垂直III族氮化物发光器件及其制造方法。该方法包括在碱性衬底上形成未掺杂的GaN层和绝缘层。然后，绝缘层被选择性地蚀刻以形成绝缘图案，并且n掺杂的Al x（1-xy） N层，有源层和p掺杂的Al N n N n层（1-mn）N层依次形成在绝缘层模式。导电衬底形成在p掺杂的Al（n-n）N层上。去除基本衬底，未掺杂的GaN层和绝缘图案，并且在n掺杂的Al x Ga y y y的暴露表面的一部分上形成n电极，（1-xy）N层。

4. 发明申请

US20060192206A1 Flip-chip type nitride semiconductor light emitting diode 失效
标题翻译：倒装型氮化物半导体发光二极管
公开(公告)号：US20060192206A1
公开(公告)日：2006-08-31
申请号：US11150288
申请日：2005-06-13
申请人： Moon Kong , Yong Kim , Jae Lee , Hyung Back
发明人： Moon Kong , Yong Kim , Jae Lee , Hyung Back
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Disclosed herein is a flip-chip type nitride semiconductor light emitting diode. The light emitting diode comprises an n-type nitride semiconductor layer formed on a transparent substrate and having a substantially rectangular upper surface, an n-side electrode which comprises at least one bonding pad adjacent to at least one corner of the upper surface of the n-type nitride semiconductor layer, extended electrodes formed in a band from the bonding pad along four sides of the upper surface of the n-type nitride semiconductor layer and one or more fingers extended in a diagonal direction of the upper surface from the bonding pad and/or the extended electrodes, an active layer and a p-type nitride semiconductor layer sequentially stacked on a region of the n-type nitride semiconductor layer where the n-side electrode is not formed, and a highly reflective ohmic contact layer formed on the p-type nitride semiconductor layer.
摘要翻译：本文公开了倒装芯片型氮化物半导体发光二极管。发光二极管包括形成在透明基板上并具有基本上矩形的上表面的n型氮化物半导体层，n侧电极包括与n的上表面的至少一个角相邻的至少一个焊盘型氮化物半导体层，从接合焊盘沿着n型氮化物半导体层的上表面的四边形成的带状的延伸电极和从接合焊盘沿上表面的对角线方向延伸的一个或多个指状物，或者在n型氮化物半导体层的未形成n侧电极的区域上依次堆叠的延伸电极，有源层和p型氮化物半导体层以及形成在该n型氮化物半导体层上的高反射欧姆接触层 p型氮化物半导体层。

5. 发明申请

US20060249736A1 Nitride semiconductor light emitting device and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20060249736A1
公开(公告)日：2006-11-09
申请号：US11414371
申请日：2006-05-01
申请人： Jae Lee , Hyung Back , Moon Kong
发明人： Jae Lee , Hyung Back , Moon Kong
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/32 , H01L33/405
摘要： The present invention relates to a nitride semiconductor light emitting device. The nitride semiconductor light emitting device includes an n-type electrode; an n-type nitride semiconductor layer that is formed to come in contact with the n-type electrode; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; an undoped GaN layer that is formed on the p-type nitride semiconductor layer; an AlGaN layer that is formed on the undoped GaN layer so as to provide a two-dimensional electron gas layer to the interface with the undoped GaN layer; a reflecting layer that is formed on the AlGaN layer; a barrier that is formed so as to surround the reflecting layer; and a p-type electrode that is formed on the barrier.
摘要翻译：本发明涉及一种氮化物半导体发光器件。氮化物半导体发光器件包括n型电极; 形成为与n型电极接触的n型氮化物半导体层; 形成在n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 在p型氮化物半导体层上形成的未掺杂的GaN层; AlGaN层，形成在未掺杂的GaN层上，以便在与未掺杂的GaN层的界面上提供二维电子气层; 形成在AlGaN层上的反射层; 形成为围绕反射层的障碍物; 以及形成在屏障上的p型电极。

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