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    • 3. 发明申请
    • Apparatus and method for realizing all-optical nor logic device using gain saturation characteristics of a semiconductor optical amplifier
    • 使用半导体光放大器的增益饱和特性实现全光或逻辑器件的装置和方法
    • US20060158716A1
    • 2006-07-20
    • US11039692
    • 2005-01-20
    • Young ByunJae KimYoung JhonSeok LeeDeok WooSun KimJong Yi
    • Young ByunJae KimYoung JhonSeok LeeDeok WooSun KimJong Yi
    • H01S3/00
    • H01S5/50G02F1/3515G02F3/00G02F2203/70H01S5/509
    • The present invention relates to an apparatus and a method for realizing all-optical NOR logic device using the gain saturation characteristics of a semiconductor optical amplifier (SOA). More particularly, the invention relates to a 10 Gbit/s all-optical NOR logic device among all-optical logic devices, in which a signal transmitted from a given point of an optical circuit such as an optical computing circuit is used as a pump signal and a probe signal. The method for realizing an all-optical NOR logic device using the gain saturation characteristics of the SOA according to the present invention comprises the steps of: utilizing A+B signal which couples together an input signal pattern A (1100) and an input signal pattern B (0110) as a pump signal (1110); utilizing a probe signal (1111) by generating a clock signal out of said input signal pattern A (1100); and obtaining a Boolean equation {overscore (A+B)} by making said probe signal and said pump signal incident upon the SOA simultaneously from the opposite direction. The all-optical logic device according to the present invention has a simple construction since it is realized through the XGM (Cross Gain Modulation) method which utilizes the gain saturation characteristics. Also, it is expected that the method employed in the present invention could be used for realizing other all-optical logic circuits and devices. Key Words 10 Gbit/s, All-optical NOR logic device (10 Gbit/s All-optical NOR logic device), Semiconductor Optical Amplifiers, Gain Saturation
    • 本发明涉及使用半导体光放大器(SOA)的增益饱和特性实现全光NOR逻辑器件的装置和方法。 更具体地说,本发明涉及全光逻辑器件中的10Gbit / s全光NOR逻辑器件,其中从诸如光计算电路的光电路的给定点发送的信号用作泵信号 和探测信号。 使用根据本发明的SOA的增益饱和特性来实现全光NOR逻辑器件的方法包括以下步骤:利用将输入信号模式A(1100)和输入信号模式(1100)耦合在一起的A + B信号 B(0110)作为泵浦信号(1110); 通过从所述输入信号模式A(1100)产生时钟信号来利用探测信号(1111); 并通过使所述探针信号和所述泵浦信号从相反方向同时入射到SOA上而获得布尔方程(A + B)。根据本发明的全光逻辑器件具有简单的结构,因为它通过 利用增益饱和特性的XGM(交叉增益调制)方法,预计本发明采用的方法可用于实现其他全光逻辑电路和器件。关键词10 Gbit / s,全部 - 光学NOR逻辑器件(10 Gbit / s全光NOR逻辑器件),半导体光放大器,增益饱和度
    • 7. 发明申请
    • METHOD OF FABRICATING FLASH MEMORY DEVICE USING SIDEWALL PROCESS
    • 使用边框工艺制作闪存存储器件的方法
    • US20070243681A1
    • 2007-10-18
    • US11766758
    • 2007-06-21
    • Jae Kim
    • Jae Kim
    • H01L21/336
    • H01L27/11521H01L27/115
    • A method of fabricating a flash memory device includes depositing and etching an insulating layer on a substrate having STI structures, depositing a first polysilicon layer over the insulating layer and the substrate, etching the first polysilicon layer to form floating gates and removing the insulating layer. The method also includes forming a first photoresist pattern, performing a first ion implantation using the first photoresist pattern to form first source/drain regions in the substrate and adjacent to the floating gate, removing the first photoresist pattern, depositing an ONO layer on the resulting structure, depositing a second polysilicon layer over the ONO layer, and etching the second polysilicon layer to form a control gate and at least one select gate. The method concludes by forming a second photoresist pattern and performing a second ion implantation using the second photoresist pattern to form second source/drain regions in the substrate and adjacent to the select gate.
    • 一种制造闪速存储器件的方法包括在具有STI结构的衬底上沉积和蚀刻绝缘层,在绝缘层和衬底上沉积第一多晶硅层,蚀刻第一多晶硅层以形成浮动栅极并去除绝缘层。 该方法还包括形成第一光致抗蚀剂图案,使用第一光致抗蚀剂图案进行第一离子注入,以在衬底中形成第一源极/漏极区域并与浮置栅极相邻,去除第一光致抗蚀剂图案,在所得到的光刻胶图案上沉积ONO层 在所述ONO层上沉积第二多晶硅层,以及蚀刻所述第二多晶硅层以形成控制栅极和至少一个选择栅极。 该方法通过形成第二光致抗蚀剂图案并且使用第二光致抗蚀剂图案执行第二离子注入来形成第二源极/漏极区域并且邻近选择栅极。