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1. 外观设计

USD597501S1 Light-emitting diode 有权
公开(公告)号：USD597501S1
公开(公告)日：2009-08-04
申请号：US29325548
申请日：2008-10-02
申请人： Jae Joon Yoon , Sung Soo Park , In Joon Pyeon
设计人： Jae Joon Yoon , Sung Soo Park , In Joon Pyeon

2. 发明申请

US20080105889A1 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20080105889A1
公开(公告)日：2008-05-08
申请号：US11976791
申请日：2007-10-29
申请人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

3. 发明申请

US20100193823A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20100193823A1
公开(公告)日：2010-08-05
申请号：US12756528
申请日：2010-04-08
申请人： Tae Jun KIM , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun KIM , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L33/44
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

4. 发明授权

US07727787B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07727787B2
公开(公告)日：2010-06-01
申请号：US11976791
申请日：2007-10-29
申请人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L21/304
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

5. 发明授权

US08124997B2 Nitride semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08124997B2
公开(公告)日：2012-02-28
申请号：US12756528
申请日：2010-04-08
申请人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
发明人： Tae Jun Kim , Su Yeol Lee , Dong Woo Kim , Hyun Ju Park , Hyoun Soo Shin , In Joon Pyeon
IPC分类号： H01L31/0232
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和通过该方法制造的氮化物半导体发光器件，该方法包括：通过依次生长第一导电氮化物层，有源层和第二导电性来形成发光结构在氮化物单晶生长的预备衬底上形成氮化物层; 根据最终发光器件的尺寸分离发光结构; 在所述发光结构上形成导电基板; 抛光初步衬底的底面以减小初步衬底的厚度; 通过机加工初步底材形成不均匀的表面结构; 选择性地去除所述初步衬底以暴露所述第一导电型氮化物层的部分; 以及通过选择性地去除所述预备衬底而在所述第一导电型氮化物层的部分上形成电极。

6. 发明申请

US20110049552A1 LIGHT EMITTING DIODE PACKAGE 审中-公开
标题翻译：发光二极管封装
公开(公告)号：US20110049552A1
公开(公告)日：2011-03-03
申请号：US12810097
申请日：2008-12-24
申请人： In Joon Pyeon , Hong Min Kim
发明人： In Joon Pyeon , Hong Min Kim
IPC分类号： H01L23/28 , H01L33/00
CPC分类号： H01L33/62 , H01L33/486 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2924/01021 , H01L2924/01068 , H01L2924/00014
摘要： There is provided a light emitting diode (LED) package. The LED package includes A light emitting diode (LED) package includes a pair of lead frames connected with at least one LED chip through a metal wire, a package body integrally fixed with the lead frames and having a cavity having an open top, a lead frame bent downwardly to a lower part of an external mounting surface of the package body, a light-transmissive, transparent resin covering the LED chip and filling the cavity, a recess formed in a bottom surface of the cavity, in which the LED chip is mounted, and a transparent resin including a fluorescent material formed in the recess and the cavity. Accordingly, the amount of light-transmissive, transparent resin filling the cavity is reduced to save on manufacturing costs, and the height of the resin is lowered to improve the luminance of light. Also, the height of the package body is lowered, contributing to manufacturing a small product.
摘要翻译：提供了一种发光二极管（LED）封装。 LED封装包括：发光二极管（LED）封装，包括通过金属线与至少一个LED芯片连接的一对引线框架，与引线框架整体固定并具有开口顶部的空腔的封装体，引线框架向下弯曲到封装体的外部安装表面的下部，覆盖LED芯片并填充空腔的透光的透明树脂，形成在腔的底表面中的凹部，其中LED芯片是以及包含形成在凹部和空腔中的荧光材料的透明树脂。因此，减少填充空腔的透光性透明树脂的量，以节省制造成本，并且降低树脂的高度以提高光的亮度。此外，包装体的高度降低，有助于制造小产品。

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