专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070272948A1 INVERTER WITH DUAL-GATE ORGANIC THIN-FILM TRANSISTOR 审中-公开
标题翻译：具有双栅有机薄膜晶体管的逆变器
公开(公告)号：US20070272948A1
公开(公告)日：2007-11-29
申请号：US11693830
申请日：2007-03-30
申请人： Jae Bon KOO , Seong Hyun KIM , Kyung Soo SUH , Sang Chul LIM , Jung Hun LEE , Chan Hoe KU
发明人： Jae Bon KOO , Seong Hyun KIM , Kyung Soo SUH , Sang Chul LIM , Jung Hun LEE , Chan Hoe KU
IPC分类号： H01L27/10 , H01L29/76
CPC分类号： H01L27/12 , H01L27/283 , H01L51/0554
摘要： Provided is an inverter having a new structure capable of easily controlling a threshold voltage according to position in fabricating an inverter circuit on a plastic substrate using an organic semiconductor. A driver transistor is formed with a dual-gate structure and a positive bias voltage is applied to the top gate of the driver transistor so that a body effect appears in the organic semiconductor. Accordingly, the threshold voltage is shifted to a negative zone due to positive potential applied to the top gate of the driver transistor so that the driver transistor acts as an enhancement type transistor. A dual-gate organic structure may be applied to a load transistor rather than the driver transistor, or a p-type dual-gate organic transistor structure may be applied to both the driver transistor and the load transistor. Lifespan of the device can be increased, reliability of the device can be improved, and an organic inverter can be provided in which characteristics of organic electronic elements are easily adjusted according to circuit design even after the organic electronic elements are fabricated.
摘要翻译：提供一种逆变器，其具有能够根据使用有机半导体在塑料基板上制造逆变器电路时的位置容易地控制阈值电压的新结构。驱动晶体管由双栅结构形成，正偏置电压施加到驱动晶体管的顶栅，从而在有机半导体中出现体效应。因此，由于施加到驱动晶体管的顶栅极的正电位，阈值电压被转移到负区，使得驱动晶体管用作增强型晶体管。双栅极有机结构可以施加到负载晶体管而不是驱动晶体管，或者p型双栅极有机晶体管结构可以施加到驱动晶体管和负载晶体管两者。可以提高装置的寿命，可以提高装置的可靠性，并且可以提供有机逆变器，即使在有机电子元件制造之后，也可以根据电路设计容易地调整有机电子元件的特性。

2. 发明申请

US20080080221A1 INVERTER 失效
标题翻译：逆变器
公开(公告)号：US20080080221A1
公开(公告)日：2008-04-03
申请号：US11834044
申请日：2007-08-06
申请人： Jae Bon KOO , Seong Hyun KIM , Kyung Soo SUH , Chan Hoe KU , Sang Chul LIM , Jung Hun LEE
发明人： Jae Bon KOO , Seong Hyun KIM , Kyung Soo SUH , Chan Hoe KU , Sang Chul LIM , Jung Hun LEE
IPC分类号： H02M7/537
CPC分类号： H01L27/281 , H01L27/283
摘要： Provided are a structure and fabricating method of a new inverter for controlling a threshold voltage of each location when an inverter circuit is manufactured using an organic semiconductor on a plastic substrate.In general, p-type organic semiconductor is stable. Accordingly, when the inverter is formed of only the p-type semiconductor, a D-inverter composed of a depletion load and an enhancement driver has large gains, wide swing width and low power consumption, which is more preferable than an E-inverter composed of an enhancement load and an enhancement driver. However, it is impossible to form a depletion transistor and an enhancement transistor on the same substrate while controlling them by locations.To overcome such a difficulty, the structure of the inverter in which a bottom gate organic semiconductor transistor showing enhancement type characteristics is used as a driver transistor, and a top gate organic semiconductor transistor showing depletion type characteristics is used as a load transistor, and a manufacturing method thereof are proposed. According to this structure, a passivation effect of an organic semiconductor may be additionally obtained by a second insulating layer and a second gate electrode material which are on top of the organic semiconductor, and a high degree of integration may also be improved.
摘要翻译：提供了当在塑料基板上使用有机半导体制造逆变器电路时，用于控制每个位置的阈值电压的新型逆变器的结构和制造方法。通常，p型有机半导体是稳定的。因此，当逆变器仅由p型半导体构成时，由耗尽负载和增强型驱动器构成的D逆变器具有大的增益，宽的摆幅宽度和低功耗，这比组成的E型逆变器更优选的增强负载和增强驱动器。然而，不可能在相同的衬底上形成耗尽晶体管和增强晶体管，同时通过位置来控制它们。为了克服这样的困难，将使用显示增强型特性的底栅有机半导体晶体管作为驱动晶体管的逆变器的结构和显示耗尽型特性的顶栅有机半导体晶体管用作负载晶体管，并且提出了其制造方法。根据该结构，可以通过位于有机半导体顶部的第二绝缘层和第二栅极电极材料另外获得有机半导体的钝化效果，并且还可以提高高集成度。

3. 发明申请

US20090152537A1 COMPOSITION FOR ORGANIC POLYMER GATE INSULATING LAYER AND ORGANIC THIN FILM TRANSISTOR USING THE SAME 失效
标题翻译：有机聚合物绝缘层和有机薄膜晶体管的组合物
公开(公告)号：US20090152537A1
公开(公告)日：2009-06-18
申请号：US12182577
申请日：2008-07-30
申请人： Seong Hyun KIM , Sang Chul LIM , Gi Heon KIM , Ji Ho YOUK , Tae Gon KIM
发明人： Seong Hyun KIM , Sang Chul LIM , Gi Heon KIM , Ji Ho YOUK , Tae Gon KIM
IPC分类号： H01L51/05 , C08J3/24
CPC分类号： H01L51/052 , H01L51/0545
摘要： Provided are a composition for an organic polymer gate insulating layer and an Organic Thin Film Transistor (OTFT) using the same. The composition includes an insulating organic polymer including at least one selected from the group consisting of polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), polyvinylpyrrolidone (PVP), poly(vinyl phenol) (PVPh) and a copolymer thereof, a crosslinking monomer having two or more double bonds, and a photoinitiator. The OTFT includes a gate insulating layer of a semi-interpenetrating polymer network formed of the composition.The composition for a photoreactive organic polymer gate insulating layer has a photochemical characteristic that enables micropatterning, and can be formed into a layer having excellent chemical resistance, thermal resistance, surface characteristics and electrical characteristics.
摘要翻译：提供一种有机高分子栅极绝缘层和使用其的有机薄膜晶体管（OTFT）的组合物。该组合物包括绝缘有机聚合物，其包括选自聚甲基丙烯酸甲酯（PMMA），聚乙烯醇（PVA），聚乙烯吡咯烷酮（PVP），聚（乙烯基苯酚）（PVPh）及其共聚物中的至少一种，具有两个或更多双键，以及光引发剂。 OTFT包括由该组合物形成的半互穿聚合物网络的栅极绝缘层。光反应性有机聚合物栅极绝缘层的组合物具有能够进行微图案化的光化学特性，并且可以形成为具有优异的耐化学性，耐热性，表面特性和电特性的层。

4. 发明申请

US20090278117A1 ORGANIC THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND BIOSENSOR USING THE TRANSISTOR 有权
标题翻译：有机薄膜晶体管，其制造方法和使用晶体管的生物传感器
公开(公告)号：US20090278117A1
公开(公告)日：2009-11-12
申请号：US12244364
申请日：2008-10-02
申请人： Sang Chul LIM , Seong Hyun Kim , Yong Suk Yang , Doo Hyeb Youn , Zin Sig Kim
发明人： Sang Chul LIM , Seong Hyun Kim , Yong Suk Yang , Doo Hyeb Youn , Zin Sig Kim
IPC分类号： H01L51/40 , H01L51/00
CPC分类号： H01L51/0533 , H01L51/0097 , H01L51/0541 , H01L51/0545 , H01L51/0562
摘要： An organic thin film transistor (OTFT), a method of manufacturing the same, and a biosensor using the OTFT are provided. The OTFT includes a gate electrode, a gate insulating layer, source and drain electrodes, and an organic semiconductor layer disposed on a substrate and further includes an interface layer formed between the gate insulating layer and the organic semiconductor layer by a sol-gel process. The gate insulating layer is formed of an organic polymer, and the interface layer is formed of an inorganic material. The OTFT employs the interface layer interposed between the gate insulating layer and the organic semiconductor layer so that the gate insulating layer can be protected from the exterior and adhesion of the gate insulating layer with the organic semiconductor layer can be improved, thereby increasing driving stability. Also, since the OTFT can use a plastic substrate, the manufacture of the OTFT is inexpensive so that the OTFT can be used as a disposable biosensor.
摘要翻译：提供有机薄膜晶体管（OTFT），其制造方法和使用OTFT的生物传感器。 OTFT包括栅极电极，栅极绝缘层，源极和漏极电极以及设置在基板上的有机半导体层，并且还包括通过溶胶 - 凝胶法在栅极绝缘层和有机半导体层之间形成的界面层。栅绝缘层由有机聚合物形成，界面层由无机材料形成。 OTFT采用插入在栅极绝缘层和有机半导体层之间的界面层，从而可以保护栅极绝缘层免受外部的侵蚀，从而可以提高栅极绝缘层与有机半导体层的粘附性，从而提高驱动稳定性。此外，由于OTFT可以使用塑料基板，OTFT的制造便宜，因此OTFT可以用作一次性生物传感器。

5. 发明申请

US20130119468A1 THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20130119468A1
公开(公告)日：2013-05-16
申请号：US13530405
申请日：2012-06-22
申请人： Sang Chul LIM , Jiyoung OH , Seung Youl KANG , Hee-ok KIM , Kyoung Ik CHO , Seongdeok AHN
发明人： Sang Chul LIM , Jiyoung OH , Seung Youl KANG , Hee-ok KIM , Kyoung Ik CHO , Seongdeok AHN
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/41733 , H01L29/45 , H01L29/4908 , H01L29/78606 , H01L29/7869
摘要： A thin-film transistor may include a drain electrode, a source electrode, an active layer, a gate electrode, and a gate insulating layer. In a vertical sectional view, the gate insulating layer may be disposed between the active layer and the gate electrode to include a first inorganic layer, an organic layer, and a second inorganic layer sequentially stacked. According to a method of fabricating the thin-film transistor, the gate insulating layer may be formed between the steps of forming the active layer and the second electrode layer or between the steps of forming the first electrode layer and the second electrode layer.
摘要翻译：薄膜晶体管可以包括漏电极，源电极，有源层，栅电极和栅极绝缘层。在垂直截面图中，栅极绝缘层可以设置在有源层和栅电极之间，以包括顺序层叠的第一无机层，有机层和第二无机层。根据制造薄膜晶体管的方法，可以在形成有源层和第二电极层的步骤之间或在形成第一电极层和第二电极层的步骤之间形成栅极绝缘层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式