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1. 发明授权

US09240322B2 Method for forming superactive deactivation-resistant junction with laser anneal and multiple implants 有权
标题翻译：用激光退火和多种植入物形成超活性失活抗性结的方法
公开(公告)号：US09240322B2
公开(公告)日：2016-01-19
申请号：US13995171
申请日：2011-12-09
申请人： Jacob M. Jensen , Harold W. Kennel , Tahir Ghani , Robert D. James , Mark Y. Liu
发明人： Jacob M. Jensen , Harold W. Kennel , Tahir Ghani , Robert D. James , Mark Y. Liu
IPC分类号： H01L21/425 , H01L21/268 , H01L29/78 , H01L21/265
CPC分类号： H01L21/2686 , H01L21/26506 , H01L21/26513 , H01L21/268 , H01L29/78
摘要： A pulsed-laser anneal technique includes performing an implant of a selected region of a semiconductor wafer. A co-constituent implant of the selected region is performed, and the pulsed-laser anneal of the selected region performed. A pre-amorphizing implant of the selected region can also be performed. In one embodiment, the implant of the selected region is performed as an insitu implant. In another embodiment, the co-constituent implant is performed as an insitu non-donor implant. In yet another embodiment, the implant and the co-constituent implant of the selected region are performed as an insitu donor and co-constituent implant.
摘要翻译：脉冲激光退火技术包括执行半导体晶片的选定区域的注入。执行所选择的区域的共同组成植入物，并且执行所选区域的脉冲激光退火。还可以进行所选择的区域的非失配植入物。在一个实施例中，所选择的区域的植入被实施为本体植入物。在另一个实施例中，辅助植入物作为原位非供体植入物进行。在另一个实施例中，所选择的区域的植入物和共同构成植入物作为原位供体和共同构成植入物进行。

2. 发明申请

US20130267084A1 METHOD FOR FORMING SUPERACTIVE DEACTIVATION-RESISTANT JUNCTION WITH LASER ANNEAL AND MULTIPLE IMPLANTS 有权
标题翻译：用激光天线和多个植入物形成超临界抗性结合的方法
公开(公告)号：US20130267084A1
公开(公告)日：2013-10-10
申请号：US13995171
申请日：2011-12-09
申请人： Jacob M. Jensen , Harold W. Kennel , Tahir Ghani , Robert D. James , Mark Y. Liu
发明人： Jacob M. Jensen , Harold W. Kennel , Tahir Ghani , Robert D. James , Mark Y. Liu
IPC分类号： H01L21/268
CPC分类号： H01L21/2686 , H01L21/26506 , H01L21/26513 , H01L21/268 , H01L29/78
摘要： A pulsed-laser anneal technique includes performing an implant of a selected region of a semiconductor wafer. A co-constituent implant of the selected region is performed, and the pulsed-laser anneal of the selected region performed. A pre-amorphizing implant of the selected region can also be performed. In one embodiment, the implant of the selected region is performed as an insitu implant. In another embodiment, the co-constituent implant is performed as an insitu non-donor implant. In yet another embodiment, the implant and the co-constituent implant of the selected region are performed as an insitu donor and co-constituent implant.
摘要翻译：脉冲激光退火技术包括执行半导体晶片的选定区域的注入。执行所选择的区域的共同组成植入物，并且执行所选区域的脉冲激光退火。还可以进行所选择的区域的非失配植入物。在一个实施例中，所选择的区域的植入被实施为本体植入物。在另一个实施例中，辅助植入物作为原位非供体植入物进行。在另一个实施例中，所选择的区域的植入物和共同构成植入物作为原位供体和共同构成植入物进行。

3. 发明授权

US5420794A Automated highway system for controlling the operating parameters of a vehicle 失效
标题翻译：用于控制车辆工作参数的自动公路系统
公开(公告)号：US5420794A
公开(公告)日：1995-05-30
申请号：US83767
申请日：1993-06-30
申请人： Robert D. James
发明人： Robert D. James
IPC分类号： G08G1/0967 , G08G1/0968 , G08G1/123 , G08G1/01 , G06F15/50
CPC分类号： G08G1/096716 , G08G1/096725 , G08G1/096741 , G08G1/096775 , G08G1/096811 , G08G1/096822 , G08G1/096872 , G08G1/123 , G05D2201/0213
摘要： An automated highway system reduces the data processing requirements on the vehicles and distributes the processing requirements throughout the automated highway system infra-structure. In this system, a vehicle is detected by use of a vehicle on-board transponder. This transponder responds to an omni-directional radio frequency transmission from a highway control facility used by the automated highway system in the vicinity of the vehicle. The highway control facility interrogates the vehicle transponder for identification, destination, and other pertinent travel parameters or user services to route the vehicle, schedule maintenance, provide user services, and so on. Additionally, the highway control facility calculates the location of the vehicle and energizes vehicle mounted actuators to steer, accelerate and brake the vehicle as necessary. The vehicle maintains constant communications with the automated highway system facilities while on the automated highway system highway. The highway control facility maintains a record of the vehicle as it proceeds along the highway by handing the record to the next adjacent highway control facility. The vehicle has a user interface whereby the vehicle's occupant can be informed of road, weather, traffic conditions, other user services, and the user interface unit can communicate through the user vehicle transponder to the highway control facility of a change of travel schedule, change of destination, or other parameter changes. The user interface unit permits communication by voice (microphone and loudspeaker), keypad, and CRT.
摘要翻译：自动化公路系统减少对车辆的数据处理要求，并在整个自动化公路系统基础设施中分配处理要求。在该系统中，通过使用车载转发器来检测车辆。该应答器响应于在车辆附近由自动化公路系统使用的高速公路控制设施的全向射频传输。高速公路控制设施询问车辆转发器用于识别，目的地和其他相关旅行参数或用户服务以路由车辆，进度维护，提供用户服务等。此外，高速公路控制设备计算车辆的位置并激励车载的致动器以根据需要转向，加速和制动车辆。在自动化公路系统公路上，车辆与自动化公路系统设施保持不间断的通信。高速公路控制设备通过将记录交给下一个相邻的公路控制设施，沿着高速公路运行，保持车辆的记录。车辆具有用户界面，从而可以将车辆的乘客通知道路，天气，交通状况，其他用户服务，并且用户接口单元可以通过用户车辆转发器向公路控制设施通信改变行驶计划，改变目的地或其他参数变更。用户界面单元允许通过语音（麦克风和扬声器），键盘和CRT进行通信。

4. 发明授权

US5037625A Purified quartz and process for purifying quartz 失效
标题翻译：纯化石英和石英纯化工艺
公开(公告)号：US5037625A
公开(公告)日：1991-08-06
申请号：US599544
申请日：1990-10-17
申请人： Kenneth B. Loritsch , Robert D. James
发明人： Kenneth B. Loritsch , Robert D. James
IPC分类号： C01B33/12 , C03C1/02
CPC分类号： C03C1/022 , C01B33/12
摘要： Quartz is purified by removing mineral impurities, particularly alkali metal impurities, from within the quartz crystal lattice structure. According to the disclosed process, quartz crystals are subjected to a pretreatment that removes surface bound impurities and then contacted with gaseous HCl at a temperature of from 800.degree. C. to 1600.degree. C. for a period of time of from a few minutes to several hours, thereby diffusing the mineral impurities to the quartz crystal surface where they form salts with chloride ion, removing the salts, and recovering the purified quartz crystals.
摘要翻译：石英通过从石英晶格结构内去除矿物杂质，特别是碱金属杂质来净化。根据所公开的方法，对石英晶体进行预处理，其去除表面结合的杂质，然后在800℃至1600℃的温度下与气态HCl接触数分钟至数分钟小时，从而将矿物杂质扩散到与氯离子形成盐的石英晶体表面，除去盐，并回收纯化的石英晶体。

5. 发明授权

US4983370A Purified quartz and process for purifying quartz 失效
标题翻译：纯化石英和石英纯化工艺
公开(公告)号：US4983370A
公开(公告)日：1991-01-08
申请号：US475595
申请日：1990-02-06
申请人： Kenneth B. Loritsch , Robert D. James
发明人： Kenneth B. Loritsch , Robert D. James
IPC分类号： C01B33/12 , C03C1/02
CPC分类号： C01B33/12 , C03C1/022
摘要： Quartz is purified by removing mineral impurities, particularly alkali metal impurities, from within the quartz crystal lattice structure. According to the disclosed process, quartz crystals are subjected to a pretreatment that removes surface bound impurities and then contacted with gaseous HCl at a temperature of from 800.degree. C. to 1600.degree. C. for a period of time of from a few minutes to several hours, thereby diffusing the mineral impurities to the quartz crystal surface where they form salts with chloride ion, removing the salts, and recovering the purified quartz crystals.

6. 发明申请

US20130320453A1 AREA SCALING ON TRIGATE TRANSISTORS 审中-公开
标题翻译：区域尺寸在TRIGATE晶体管上
公开(公告)号：US20130320453A1
公开(公告)日：2013-12-05
申请号：US13487111
申请日：2012-06-01
申请人： Abhijit Jayant Pethe , Justin S. Sandford , Christopher J. Wiegand , Robert D. James
发明人： Abhijit Jayant Pethe , Justin S. Sandford , Christopher J. Wiegand , Robert D. James
IPC分类号： H01L21/336 , H01L27/088
CPC分类号： H01L29/66795 , H01L29/7854
摘要： Improving an area scaling on tri-gate transistors is described. An insulating layer is deposited on a fin on a substrate. The insulating layer is recessed to expose the fin. The corner of the fin is rounded off using a noble gas. A gate dielectric layer is deposited on the rounded corner. The radius of curvature of the corner is controllable by adjusting a bias power to the substrate. The radius of curvature of the corner is determined based on the width of the fin to reduce an area scaling of the array.
摘要翻译：描述了改进三栅极晶体管的面积缩放。绝缘层沉积在基板上的翅片上。绝缘层凹入以露出翅片。翅片的角落使用惰性气体四舍五入。栅极电介质层沉积在圆角上。拐角的曲率半径可以通过调节衬底的偏置功率来控制。基于翅片的宽度来确定拐角的曲率半径以减小阵列的面积缩放。

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