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1. 发明授权

US08098002B2 Silicon resonator of the tuning-fork type 失效
标题翻译：音叉型硅谐振器
公开(公告)号：US08098002B2
公开(公告)日：2012-01-17
申请号：US12444846
申请日：2007-10-08
申请人： Jacek Baborowski , Claude Bourgeois , Marc-Alexandre Dubois , David Ruffieux
发明人： Jacek Baborowski , Claude Bourgeois , Marc-Alexandre Dubois , David Ruffieux
IPC分类号： H03H9/19
CPC分类号： H03H9/21 , H03H3/04 , H03H2003/026
摘要： The invention relates to a silicon resonator (10) of the tuning-fork type in which the linear frequency drift depending on the temperature is compensated. The resonator includes a silicon base (14), a plurality of parallel arms (11, 12, 13) capable of vibrating and actuator (18, 21, 22), wherein the arms include a silicon layer provided between two layers of silicon oxide having a thickness, relative to that of the silicon layer, such that it ensures the first-order compensation of the resonator thermal drift.
摘要翻译：本发明涉及音叉型的硅谐振器（10），其中补偿了取决于温度的线性频率漂移。谐振器包括硅基底（14），能够振动和致动器（18,21,22）的多个平行臂（11,12,13），其中臂包括设置在两层氧化硅层之间的硅层，相对于硅层的厚度，使得其确保谐振器热漂移的一阶补偿。

2. 发明申请

US20100013360A1 SILICON RESONATOR OF THE TUNING-FORK TYPE 失效
标题翻译：调谐型硅胶共振器
公开(公告)号：US20100013360A1
公开(公告)日：2010-01-21
申请号：US12444846
申请日：2007-10-08
申请人： Jacek Baborowski , Claude Bourgeois , Marc-Alexandre Bubois , David Ruffieux
发明人： Jacek Baborowski , Claude Bourgeois , Marc-Alexandre Bubois , David Ruffieux
IPC分类号： H01L41/04 , H02N11/00
CPC分类号： H03H9/21 , H03H3/04 , H03H2003/026
摘要： The invention relates to a silicon resonator (10) of the tuning-fork type in which the linear frequency drift depending on the temperature is compensated. The resonator includes a silicon base (14), a plurality of parallel arms (11, 12, 13) capable of vibrating and actuator (18, 21, 22), wherein the arms include a silicon layer provided between two layers of silicon oxide having a thickness, relative to that of the silicon layer, such that it ensures the first-order compensation of the resonator thermal drift.
摘要翻译：本发明涉及音叉型的硅谐振器（10），其中补偿了取决于温度的线性频率漂移。谐振器包括硅基底（14），能够振动和致动器（18,21,22）的多个平行臂（11,12,13），其中臂包括设置在两层氧化硅层之间的硅层，相对于硅层的厚度，使得其确保谐振器热漂移的一阶补偿。

3. 发明申请

US20080311434A1 Metallic Supporting Grid for Thin Electrolyte Membrane in Solid Oxide Fuel Cells 审中-公开
标题翻译：固体氧化物燃料电池中薄电解质膜的金属支撑网格
公开(公告)号：US20080311434A1
公开(公告)日：2008-12-18
申请号：US12097113
申请日：2006-12-13
申请人： Samuel Rey-Mermet , Paul Muralt , Jacek Baborowski
发明人： Samuel Rey-Mermet , Paul Muralt , Jacek Baborowski
IPC分类号： H01M8/00 , G03F7/20
CPC分类号： H01M8/1226 , H01M8/0247 , H01M8/1286 , H01M2008/1293 , H01M2250/30 , Y02B90/18
摘要： A solid oxide fuel cell structure obtainable by selective electro-chemical processing, comprising an electrolyte membrane (4) formed by a thin film more than 50 nm but less than 10 μm thick, covering a supporting structure (1) made of a bulk substrate, the supporting structure having at least one 100 μm to 100 mm wide opening that is covered by the electrolyte membrane (4). A metallic grid (9) is applied over the electrolyte membrane (4) and serves at the same time as structural element to support the membrane and as current collector. The metallic grid (9) has gridlines that are higher than the membrane thickness and whose height to width ratio is larger than 0.5, and a mesh size about 10 to 1000 times smaller than the width of said opening. The metallic grid (9) can be applied on top of a patterned metallic sub-layer structure (7,7a) arranged for supplying a fine distribution of current and increasing the density of electrolyte-electrode boundaries exposed to the fluid. The structure is useful for current generation and as a gas sensor.
摘要翻译：一种通过选择性电化学处理获得的固体氧化物燃料电池结构，包括由大于50nm但小于10μm厚的薄膜形成的电解质膜（4），覆盖由本体基板制成的支撑结构（1）所述支撑结构具有由所述电解质膜（4）覆盖的至少一个100微米至100毫米宽的开口。将金属网格（9）施加在电解质膜（4）上并与结构元件同时用于支撑膜和集电器。金属网格（9）具有高于膜厚度并且其高宽比大于0.5的网格线，并且具有比所述开口宽度小约10至1000倍的网格尺寸。金属网格（9）可以被施加在图案化的金属子层结构（7,7a）的顶部上，排列用于提供细微的电流分布并且增加暴露于流体的电解质 - 电极边界的密度。该结构对于当前的发电和气体传感器是有用的。

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