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1. 发明申请

US20130157449A1 METHOD FOR FORMING METAL GATE 有权
标题翻译：形成金属门的方法
公开(公告)号：US20130157449A1
公开(公告)日：2013-06-20
申请号：US13686483
申请日：2012-11-27
申请人： JUNZHU CAO , LILY JIANG , CINDY LI , CREEK ZHU
发明人： JUNZHU CAO , LILY JIANG , CINDY LI , CREEK ZHU
IPC分类号： H01L29/66
CPC分类号： H01L29/66545 , H01L21/82345 , H01L21/823842
摘要： A method for forming metal gates is provided. In the method, a substrate with a first region and a second region is provided. Dummy gate structures and an ILD layer is formed on the substrate. Dummy gates of the dummy gate structures are removed to form openings respectively within the two regions. Work function layers are respectively formed to overlay the openings. A metal layer is formed on the work function layers and then a CMP process is performed until the ILD layer is exposed, thereby forming the metal gates within the two regions at the same time. Only one CMP process is performed to the metal layer, so that over polishing of the ILD layer may be reduced and thickness of metal gates may be more accurately controlled.
摘要翻译：提供一种用于形成金属栅极的方法。在该方法中，提供具有第一区域和第二区域的基板。在基板上形成虚拟门结构和ILD层。去除虚拟门结构的虚拟门，分别在两个区域内形成开口。工作功能层分别形成以覆盖开口。在功函数层上形成金属层，然后进行CMP处理，直到ILD层露出，从而同时在两个区域内形成金属栅极。对金属层仅执行一个CMP工艺，从而可以减少ILD层的过度抛光，并且可以更精确地控制金属栅极的厚度。

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