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1. 发明申请

US20120190182A1 DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS 审中-公开
公开(公告)号：US20120190182A1
公开(公告)日：2012-07-26
申请号：US13440495
申请日：2012-04-05
申请人： JIPING LI , Aaron Muir Hunter , Bruce E. Adams , Theodore P. Moffitt , Stephen Moffatt
发明人： JIPING LI , Aaron Muir Hunter , Bruce E. Adams , Theodore P. Moffitt , Stephen Moffatt
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/2658
摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.

2. 发明申请

US20090046750A1 INCREASED NANOSECOND LASER PULSE-TO-PULSE ENERGY REPEATABILITY USING ACTIVE LASER PULSE ENERGY CONTROL 审中-公开
标题翻译：增加激光器激光脉冲能量可重复使用激光脉冲能量控制
公开(公告)号：US20090046750A1
公开(公告)日：2009-02-19
申请号：US11839415
申请日：2007-08-15
申请人： JIPING LI , Timothy N. Thomas , Dean Jennings , Bruce E. Adams , Aaron Muir Hunter
发明人： JIPING LI , Timothy N. Thomas , Dean Jennings , Bruce E. Adams , Aaron Muir Hunter
IPC分类号： H01S3/10
CPC分类号： B23K26/0622 , H01L21/02686 , H01L21/2026
摘要： A method and apparatus for reducing the pulse-to-pulse laser energy variation (i.e., increasing the pulse-to-pulse laser energy repeatability) from a pulsed laser source are provided. In this manner, laser pulses impingent on a processing plane, such as the surface of a wafer or other substrate, may have substantially the same energy content leading to a more controlled process when compared to conventional processing. The method may be based on in-situ detection of the pulse energy level and the subsequent active adjustment of the transmitted laser pulse energy in a closed-loop control scheme. Furthermore, the active adjustment of the laser pulse energy may occur within a few nanoseconds after the original laser pulse is generated by a pulsed laser source.
摘要翻译：提供了一种用于从脉冲激光源减少脉冲对脉冲激光能量变化（即，增加脉冲到脉冲激光能量重复性）的方法和装置。以这种方式，与常规处理相比，照射在诸如晶片或其它基板的表面的处理平面上的激光脉冲可具有基本上相同的能量含量，导致更受控制的过程。该方法可以基于在闭环控制方案中脉冲能级的随机检测和随后的发射激光脉冲能量的主动调节。此外，在通过脉冲激光源产生原始激光脉冲之后，激光脉冲能量的主动调节可能在几纳秒内发生。

3. 发明申请

US20130330064A1 MELT DEPTH DETERMINATION USING INFRARED INTERFEROMETRIC TECHNIQUE IN PULSED LASER ANNEALING 审中-公开
标题翻译：使用脉冲激光退火的红外干涉技术进行金属深度测定
公开(公告)号：US20130330064A1
公开(公告)日：2013-12-12
申请号：US13906118
申请日：2013-05-30
申请人： JIPING LI
发明人： JIPING LI
IPC分类号： H05B6/00
CPC分类号： H05B6/00 , G01B11/0625 , G01B11/0675 , H01L21/67115 , H01L21/67248 , H01L21/67253
摘要： Methods and apparatus for measuring the melt depth of a substrate during pulsed laser melting are provided. The apparatus can include a heat source, a substrate support with an opening formed therein, and an interferometer positioned to direct coherent radiation toward the toward the substrate support. The method can include positioning the substrate with a first surface in a thermal processing chamber, heating a portion of the first surface with a heat source, directing infrared spectrum radiation at a partially reflective mirror creating control radiation and interference radiation, directing the interference radiation to a melted surface and directing the control radiation to a control surface, and measuring the interference between the reflected radiation. The interference fringe pattern can be used to determine the precise melt depth during the melt process.
摘要翻译：提供了用于在脉冲激光熔化期间测量衬底的熔体深度的方法和装置。该设备可以包括热源，其中形成有开口的基板支撑件和定位成将相干辐射朝着基板支撑件引导的干涉仪。该方法可以包括将基板与第一表面定位在热处理室中，用热源加热第一表面的一部分，在部分反射镜处引导红外光谱辐射，产生控制辐射和干涉辐射，将干涉辐射引导到熔化的表面并将控制辐射引导到控制表面，并测量反射辐射之间的干扰。干涉条纹图案可用于确定熔融过程中的精确熔体深度。

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