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1. 发明授权

US08198196B1 High aspect ratio trench structures with void-free fill material 有权
标题翻译：具有无孔填充材料的高纵横比沟槽结构
公开(公告)号：US08198196B1
公开(公告)日：2012-06-12
申请号：US13154228
申请日：2011-06-06
申请人： James J. Murphy , Hui Chen , Eileen Valdez
发明人： James J. Murphy , Hui Chen , Eileen Valdez
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/456 , H01L29/4925 , H01L29/4933 , H01L29/495 , H01L29/4975 , H01L29/66727 , H01L29/66734
摘要： A field effect transistor (FET) includes a trench extending into a semiconductor region. A conductive electrode is disposed in the trench, and the conductive electrode is insulated from the semiconductor region by a dielectric layer. The conductive electrode includes a conductive liner lining the dielectric layer along opposite sidewalls of the trench. The conductive liner has tapered edges such that a thickness of the conductive liner gradually increases from a top surface of the conductive electrode to a point in lower half of the conductive electrode. The conductive electrode further includes a conductive fill material sandwiched by the conductive liner. The FET further includes a drift region of a first conductivity type in the semiconductor region, and a body region of a second conductivity type extending over the drift region. Source regions of the first conductivity type extend in the body region adjacent the trench.
摘要翻译：场效应晶体管（FET）包括延伸到半导体区域中的沟槽。导电电极设置在沟槽中，导电电极通过电介质层与半导体区域绝缘。导电电极包括沿着沟槽的相对侧壁衬在电介质层上的导电衬垫。导电衬垫具有锥形边缘，使得导电衬垫的厚度从导电电极的顶表面逐渐增加到导电电极的下半部分。导电电极还包括被导电衬垫夹住的导电填充材料。 FET还包括半导体区域中的第一导电类型的漂移区域和在漂移区域上延伸的第二导电类型的体区域。第一导电类型的源区在与沟槽相邻的体区中延伸。

2. 发明授权

US07956411B2 High aspect ratio trench structures with void-free fill material 有权
标题翻译：具有无孔填充材料的高纵横比沟槽结构
公开(公告)号：US07956411B2
公开(公告)日：2011-06-07
申请号：US12353909
申请日：2009-01-14
申请人： James J. Murphy , Hui Chen , Eileen Valdez
发明人： James J. Murphy , Hui Chen , Eileen Valdez
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/456 , H01L29/4925 , H01L29/4933 , H01L29/495 , H01L29/4975 , H01L29/66727 , H01L29/66734
摘要： A field effect transistor (FET) includes a trench extending into a semiconductor region. A conductive electrode is disposed in the trench, and the conductive electrode is insulated from the semiconductor region by a dielectric layer. The conductive electrode includes a conductive liner lining the dielectric layer along opposite sidewalls of the trench. The conductive liner has tapered edges such that a thickness of the conductive liner gradually increases from a top surface of the conductive electrode to a point in lower half of the conductive electrode. The conductive electrode further includes a conductive fill material sandwiched by the conductive liner. The FET further includes a drift region of a first conductivity type in the semiconductor region, and a body region of a second conductivity type extending over the drift region. Source regions of the first conductivity type extend in the body region adjacent the trench.
摘要翻译：场效应晶体管（FET）包括延伸到半导体区域中的沟槽。导电电极设置在沟槽中，导电电极通过电介质层与半导体区域绝缘。导电电极包括沿着沟槽的相对侧壁衬在电介质层上的导电衬垫。导电衬垫具有锥形边缘，使得导电衬垫的厚度从导电电极的顶表面逐渐增加到导电电极的下半部分。导电电极还包括被导电衬垫夹住的导电填充材料。 FET还包括半导体区域中的第一导电类型的漂移区域和在漂移区域上延伸的第二导电类型的体区域。第一导电类型的源区在与沟槽相邻的体区中延伸。

3. 发明申请

US20100044785A1 HIGH ASPECT RATIO TRENCH STRUCTURES WITH VOID-FREE FILL MATERIAL 有权
标题翻译：具有无空隙填充材料的高平均比例结构
公开(公告)号：US20100044785A1
公开(公告)日：2010-02-25
申请号：US12353909
申请日：2009-01-14
申请人： JAMES J. MURPHY , Hui Chen , Eileen Valdez
发明人： JAMES J. MURPHY , Hui Chen , Eileen Valdez
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/456 , H01L29/4925 , H01L29/4933 , H01L29/495 , H01L29/4975 , H01L29/66727 , H01L29/66734
摘要： A field effect transistor (FET) includes a trench extending into a semiconductor region. A conductive electrode is disposed in the trench, and the conductive electrode is insulated from the semiconductor region by a dielectric layer. The conductive electrode includes a conductive liner lining the dielectric layer along opposite sidewalls of the trench. The conductive liner has tapered edges such that a thickness of the conductive liner gradually increases from a top surface of the conductive electrode to a point in lower half of the conductive electrode. The conductive electrode further includes a conductive fill material sandwiched by the conductive liner. The FET further includes a drift region of a first conductivity type in the semiconductor region, and a body region of a second conductivity type extending over the drift region. Source regions of the first conductivity type extend in the body region adjacent the trench.
摘要翻译：场效应晶体管（FET）包括延伸到半导体区域中的沟槽。导电电极设置在沟槽中，导电电极通过电介质层与半导体区域绝缘。导电电极包括沿着沟槽的相对侧壁衬在电介质层上的导电衬垫。导电衬垫具有锥形边缘，使得导电衬垫的厚度从导电电极的顶表面逐渐增加到导电电极的下半部分。导电电极还包括被导电衬垫夹住的导电填充材料。 FET还包括半导体区域中的第一导电类型的漂移区域和在漂移区域上延伸的第二导电类型的体区域。第一导电类型的源区在与沟槽相邻的体区中延伸。

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