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    • 4. 发明申请
    • METHOD FOR DIVIDING A SEMICONDUCTOR FILM FORMED ON A SUBSTRATE INTO PLURAL REGIONS BY MULTIPLE LASER BEAM IRRADIATION
    • 通过多激光束辐射将基底上形成的半导体膜分成多个区域的方法
    • US20110300692A1
    • 2011-12-08
    • US13126487
    • 2009-10-20
    • Jens GünsterIvan Sinicco
    • Jens GünsterIvan Sinicco
    • H01L21/268B29C35/08
    • B23K26/0608B23K26/364B23K26/40B23K2101/40B23K2103/172B23K2103/50
    • The present invention relates to a method for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film. Except of a final laser beam treatment, the treatments of said sequence of at least two laser beam treatments are used for a conditioning of the treated film area which is to be removed. Said final laser beam treatment is applied to actually remove material in order to form a groove. Further, the invention relates to an arrangement for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation using a sequence of at least two laser beam treatments affecting essentially a same area of said film. Said arrangement comprises a first conditioning laser for the treatments of said sequence of at least two laser beam treatments except of a final laser beam treatment and it comprises a second laser for said final laser beam treatment.
    • 本发明涉及一种通过多个激光束照射将基板上形成的半导体膜分成多个区域的方法,所述方法使用至少两个影响所述膜的相同面积的激光束处理的序列。 除了最终的激光束处理之外,所述至少两个激光束处理序列的处理被用于待去除处理的膜区域的调节。 施加所述最终激光束处理以实际去除材料以形成凹槽。 此外,本发明涉及一种通过多次激光束照射将形成在基板上的半导体膜分割成多个区域的装置,该装置使用至少两个影响所述膜的相同面积的激光束处理的序列。 所述装置包括用于处理除了最终激光束处理之外的至少两个激光束处理的所述序列的第一调节激光器,并且其包括用于所述最终激光束处理的第二激光器。