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    • 5. 发明授权
    • Electrophotosensitive member having an amorphous silicon-germanium layer
    • 具有非晶硅 - 锗层的电子感光元件
    • US4681825A
    • 1987-07-21
    • US753589
    • 1985-07-10
    • Izumi OsawaIsao DoiToshiya Natsuhara
    • Izumi OsawaIsao DoiToshiya Natsuhara
    • G03G5/04G03G5/08G03G5/082
    • G03G5/08G03G5/08235
    • The present invention provides an electrophotosensitive member comprising laminating a layer composed substantially of amorphous silicon, a layer composed substantially of amorphous silicon:germanium and a layer composed substantially of amorphous silicon in this order on an electroconductive substrate, an electrophotosensitive member comprising laminating a layer composed substantially of amorphous silicon, a layer composed substantially of amorphous silicon:germanium and a layer composed substantially of amorphous silicon in this order on an electroconductive substrate, characterized in that said layer composed substantially of amorphous silicon:germanium is situated away from said substrate by a range of 20 to 80% based on the total thickness of these layers.According to the present invention, it is improve defect of the amorphous silicon:germanium such that it is easy to generate thermally excited carriers and low in the carrier-carrying efficiency problems such as reduction of sensitivity and generation of light fatigue and residual potential are easy to occur.
    • 本发明提供了一种电光敏元件,其包括基本上由非晶硅组成的层,基本上由非晶硅构成的层:锗和基本上由非晶硅组成的层在导电性基体上层叠,电光敏元件包括层叠组成的层 基本上非晶硅,基本上由非晶硅构成的层:锗和基本上由非晶硅构成的层,在导电基底上依次构成,其特征在于,所述基本上由非晶硅:锗构成的层位于远离所述衬底的位置 范围为20〜80%,基于这些层的总厚度。 根据本发明,提高了非晶硅锗的缺陷,使得容易产生热激发载流子,并且携带效率低的问题,如灵敏度的降低和光疲劳的产生以及残留电位容易 发生。