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    • 3. 发明授权
    • Nanoprobe tip for advanced scanning probe microscopy comprising a layered probe material patterned by lithography and/or FIB techniques
    • 用于高级扫描探针显微镜的纳米针尖,包括通过光刻和/或FIB技术图案化的分层探针材料
    • US08056402B2
    • 2011-11-15
    • US12114121
    • 2008-05-02
    • Michael HeckerEhrenfried ZschechPiotr GrabiecPawel JanusTeodor Gotszalk
    • Michael HeckerEhrenfried ZschechPiotr GrabiecPawel JanusTeodor Gotszalk
    • G01B5/28
    • G01Q70/14
    • By forming an appropriate material layer, such as a metal-containing material, on a appropriate substrate and patterning the material layer to obtain a cantilever portion and a tip portion, a specifically designed nano-probe may be provided. In some illustrative aspects, additionally, a three-dimensional template structure may be provided prior to the deposition of the probe material, thereby enabling the definition of sophisticated tip portions on the basis of lithography, wherein, alternatively or additionally, other material removal processes with high spatial resolution, such as FIB techniques, may be used for defining nano-probes, which may be used for electric interaction, highly resolved temperature measurements and the like. Thus, sophisticated measurement techniques may be established for advanced thermal scanning, strain measurement techniques and the like, in which a thermal and/or electrical interaction with the surface under consideration is required. These techniques may be advantageously used for failure localization and local analysis during the fabrication of advanced integrated circuits.
    • 通过在合适的基材上形成合适的材料层(例如含金属的材料)并图案化材料层以获得悬臂部分和尖端部分,可以提供特别设计的纳米探针。 在一些说明性方面,另外,可以在沉积探针材料之前提供三维模板结构,从而能够在光刻的基础上定义复杂的尖端部分,其中替代地或另外地,其它材料去除过程与 可以使用诸如FIB技术的高空间分辨率来定义可用于电相互作用,高度分辨的温度测量等的纳米探针。 因此,可以针对先进的热扫描,应变测量技术等建立复杂的测量技术,其中需要与所考虑的表面的热和/或电相互作用。 这些技术可有利地用于高级集成电路制造期间的故障定位和局部分析。
    • 4. 发明申请
    • NANOPROBE TIP FOR ADVANCED SCANNING PROBE MICROSCOPY COMPRISING A LAYERED PROBE MATERIAL PATTERNED BY LITHOGRAPHY AND/OR FIB TECHNIQUES
    • 用于高速扫描探针显微镜的纳米技术提示,包括由LITHOGRAPHY和/或FIB技术构成的层状探针材料
    • US20090114000A1
    • 2009-05-07
    • US12114121
    • 2008-05-02
    • Michael HeckerEhrenfried ZschechPiotr GrabiecPawel JanusTeodor Gotszalk
    • Michael HeckerEhrenfried ZschechPiotr GrabiecPawel JanusTeodor Gotszalk
    • G01B5/28B05D5/12C23C14/00G03F7/20
    • G01Q70/14
    • By forming an appropriate material layer, such as a metal-containing material, on a appropriate substrate and patterning the material layer to obtain a cantilever portion and a tip portion, a specifically designed nano-probe may be provided. In some illustrative aspects, additionally, a three-dimensional template structure may be provided prior to the deposition of the probe material, thereby enabling the definition of sophisticated tip portions on the basis of lithography, wherein, alternatively or additionally, other material removal processes with high spatial resolution, such as FIB techniques, may be used for defining nano-probes, which may be used for electric interaction, highly resolved temperature measurements and the like. Thus, sophisticated measurement techniques may be established for advanced thermal scanning, strain measurement techniques and the like, in which a thermal and/or electrical interaction with the surface under consideration is required. These techniques may be advantageously used for failure localization and local analysis during the fabrication of advanced integrated circuits.
    • 通过在合适的基材上形成合适的材料层(例如含金属的材料)并图案化材料层以获得悬臂部分和尖端部分,可以提供特别设计的纳米探针。 在一些说明性方面,另外,可以在沉积探针材料之前提供三维模板结构,从而能够在光刻的基础上定义复杂的尖端部分,其中替代地或另外地,其它材料去除过程与 可以使用诸如FIB技术的高空间分辨率来定义可用于电相互作用,高度分辨的温度测量等的纳米探针。 因此,可以针对先进的热扫描,应变测量技术等建立复杂的测量技术,其中需要与所考虑的表面的热和/或电相互作用。 这些技术可有利地用于高级集成电路制造期间的故障定位和局部分析。