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    • 7. 发明授权
    • Angle sensor, angle sensor manufacturing method, and angle detection device using the angle sensor
    • 角度传感器,角度传感器制造方法以及使用角度传感器的角度检测装置
    • US08564282B2
    • 2013-10-22
    • US12864997
    • 2008-12-03
    • Hiroyuki HoshiyaKenichi MegurooKazuhiro NakamotoYasunori Abe
    • Hiroyuki HoshiyaKenichi MegurooKazuhiro NakamotoYasunori Abe
    • G01B7/30
    • G01R33/093B82Y25/00G01R33/098
    • There is provided an angle sensor and angle detection device of high output and high accuracy with a wide operating temperature range. First through eighth sensor units 511, 522, 523, 514, 531, 542, 543 and 534 are produced from spin valve magnetoresistive films that use a self-pinned type ferromagnetic pinned layer comprising two layers of ferromagnetic films that are strongly and anti-ferromagnetically coupled. The respective sensor units are produced via the formation and patterning of thin-films magnetized at angles that differ by 90°, and the formation of insulation films. By using, for the ferromagnetic films, CoFe and FeCo films that have similar Curie temperatures to make the difference in magnetization amount be zero, high immunity to external magnetic fields, a broad adaptive temperature range, and high output are realized.
    • 在宽工作温度范围内提供高输出和高精度的角度传感器和角度检测装置。 第一至第八传感器单元511,522,543,514,531,542,543和534由自旋阀磁阻膜制造,该自旋阀磁阻膜使用包括两层强磁性和反铁磁性的铁磁性薄膜的自固定型铁磁性钉扎层 耦合。 相应的传感器单元通过以不同于90°的角度磁化的薄膜的形成和图案化以及形成绝缘膜来制造。 通过对铁磁膜使用具有相似居里温度的CoFe和FeCo膜,使磁化强度的差异为零,实现了对外部磁场的高抗扰性,宽适应温度范围和高输出。
    • 10. 发明申请
    • Magnetoresistive Magnetic Head
    • 磁阻磁头
    • US20100188771A1
    • 2010-07-29
    • US12636649
    • 2009-12-11
    • Susumu OkamuraYo SatoKatsumi HoshinoHiroyuki HoshiyaKenichi MeguroKeizo Kato
    • Susumu OkamuraYo SatoKatsumi HoshinoHiroyuki HoshiyaKenichi MeguroKeizo Kato
    • G11B21/02G11B5/39
    • H01F10/3268B82Y10/00B82Y25/00G01R33/093G11B5/3906G11B2005/3996H01F10/1936H01L43/08Y10T428/1121
    • A magnetoresistive magnetic head according to one embodiment uses a current-perpendicular-to-plane magnetoresistive element having a laminate of a free layer, an intermediate layer, and a pinned layer, the pinned layer being substantially fixed to a magnetic field to be detected, wherein either the pinned layer or the free layer includes a Heusler alloy layer represented by a composition of X-Y-Z, wherein X is between about 45 at. % and about 55 at. % and is Co or Fe, Y accounts for between about 20 at. % and about 30 at. % and is one or more elements selected from V, Cr, Mn, and Fe, and Z is between about 20 at. % and about 35 at. % and is one or more elements selected from Al, Si, Ga, Ge, Sn, and Sb, the other layer including a high saturation magnetization material layer having higher saturation magnetization than that of the Heusler alloy, and where the direction of the current flowing perpendicular to plane being a direction in which an electron flows from the Heusler alloy layer into the high saturation magnetization material layer. Additional embodiments are also presented.
    • 根据一个实施例的磁阻磁头使用具有自由层,中间层和被钉扎层的叠层的电流 - 垂直于平面的磁阻元件,被钉扎层基本上固定在待检测的磁场上, 其中所述被钉扎层或所述自由层包括由XYZ的组合物表示的Heusler合金层,其中X在约45at之间。 %和约55在。 %,为Co或Fe,Y约为20盎司。 %和约30在。 %且为选自V,Cr,Mn和Fe中的一种或多种元素,Z为约20at。 %和约35英寸 %,并且是选自Al,Si,Ga,Ge,Sn和Sb中的一种或多种元素,另一层包括具有比Heusler合金高饱和磁化强度的高饱和磁化材料层,并且其中电流方向 垂直于平面流动的方向是电子从Heusler合金层流入高饱和磁化材料层的方向。 还提供了另外的实施例。