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1. 发明申请

US20130341202A1 Method for Synthesizing Fluorine Compound by Electrolysis and Electrode Therefor 有权
标题翻译：通过电解合成氟化合物的方法及其电极
公开(公告)号：US20130341202A1
公开(公告)日：2013-12-26
申请号：US13985242
申请日：2012-01-27
申请人： Isamu Mori , Akifumi Yao , Akiou Kikuchi , Masaaki Yonekura , Hiroshi Horiuchi
发明人： Isamu Mori , Akifumi Yao , Akiou Kikuchi , Masaaki Yonekura , Hiroshi Horiuchi
IPC分类号： C25B11/04 , C25B1/24
CPC分类号： C25B11/0478 , C25B1/245 , C25B11/12 , C25D3/66 , C25D9/06
摘要： Disclosed is an electrode for electrolytic synthesis of a fluorine compound, including: an electrode substrate having at least a surface thereof formed of a conductive carbon material; a conducting diamond layer formed on a part of the surface of the electrode substrate; and a metal fluoride-containing coating layer formed on an exposed part of the electrode substrate that is uncovered by the conducting diamond layer. It is possible for the electrolytic synthesis electrode to limit the growth of a graphite fluoride layer on the electrode surface, prevent decrease in effective electrolysis area and allow stable electrolysis in an electrolytic bath of a hydrogen fluoride-containing molten salt.
摘要翻译：公开了一种用于电解合成氟化合物的电极，包括：至少具有由导电碳材料形成的表面的电极基底; 形成在电极基板表面的一部分上的导电金刚石层; 以及形成在未被导电金刚石层覆盖的电极基板的暴露部分上的含金属氟化物的涂层。电解合成电极可以限制电极表面上的石墨氟化物层的生长，防止有效电解区域的降低，并允许在含氟化氢的熔融盐的电解浴中稳定的电解。

2. 发明授权

US09238872B2 Method for synthesizing fluorine compound by electrolysis and electrode therefor 有权
标题翻译：通过电解合成氟化合物的方法及其电极
公开(公告)号：US09238872B2
公开(公告)日：2016-01-19
申请号：US13985242
申请日：2012-01-27
申请人： Isamu Mori , Akifumi Yao , Akiou Kikuchi , Masaaki Yonekura , Hiroshi Horiuchi
发明人： Isamu Mori , Akifumi Yao , Akiou Kikuchi , Masaaki Yonekura , Hiroshi Horiuchi
IPC分类号： C25B11/04 , C25D3/66 , C25D9/06 , C25B11/12 , C25B1/24
CPC分类号： C25B11/0478 , C25B1/245 , C25B11/12 , C25D3/66 , C25D9/06
摘要： Disclosed is an electrode for electrolytic synthesis of a fluorine compound, including: an electrode substrate having at least a surface thereof formed of a conductive carbon material; a conducting diamond layer formed on a part of the surface of the electrode substrate; and a metal fluoride-containing coating layer formed on an exposed part of the electrode substrate that is uncovered by the conducting diamond layer. It is possible for the electrolytic synthesis electrode to limit the growth of a graphite fluoride layer on the electrode surface, prevent decrease in effective electrolysis area and allow stable electrolysis in an electrolytic bath of a hydrogen fluoride-containing molten salt.
摘要翻译：公开了一种用于电解合成氟化合物的电极，包括：至少具有由导电碳材料形成的表面的电极基底; 形成在电极基板表面的一部分上的导电金刚石层; 以及形成在未被导电金刚石层覆盖的电极基板的暴露部分上的含金属氟化物的涂层。电解合成电极可以限制电极表面上的石墨氟化物层的生长，防止有效电解区域的降低，并允许在含氟化氢的熔融盐的电解浴中稳定的电解。

3. 发明申请

US20120006487A1 System for In-Situ Mixing and Diluting Fluorine Gas 审中-公开
标题翻译：用于现场混合和稀释氟气的系统
公开(公告)号：US20120006487A1
公开(公告)日：2012-01-12
申请号：US13256842
申请日：2010-02-26
申请人： Akiou Kikuchi , Isamu Mori , Akifumi Yao , Tatsuo Miyazaki , Keita Nakahara
发明人： Akiou Kikuchi , Isamu Mori , Akifumi Yao , Tatsuo Miyazaki , Keita Nakahara
IPC分类号： H01L21/306
CPC分类号： C01B7/20 , B01F3/028 , B01F15/0408 , G05D11/132
摘要： [Task] It is a task to provide a fluorine gas supply system which can stably supply fluorine gas generated by a fluorine gas generation device to a semiconductor processing device in a large quantity and in a precise concentration.[Means for solving task] In the fluorine gas supply system, a mixed gas stored in a buffer tank is introduced into a gas introducing piping before the mixed gas is adjusted in the buffer tank to circulate the mixed gas and a monitoring device is disposed which measures a fluorine gas concentration within the mixed gas so that, in response to the obtained fluorine gas concentration, a flow quantity of inert gas supply source can be adjusted.
摘要翻译： [任务]提供一种能够将氟气产生装置产生的氟气稳定地供给到半导体处理装置的氟气供给系统的任务是大量且精确地集中。 [解决任务的方法]在氟气供给系统中，将缓冲罐内的混合气体引入到气体导入配管中，然后在缓冲罐内调节混合气体以使混合气体循环，并且设置监测装置，测量混合气体中的氟气浓度，使得响应于获得的氟气浓度，可以调节惰性气体供应源的流量。

4. 发明申请

US20130008781A1 FLUORINE GAS GENERATING APPARATUS 有权
标题翻译：氟燃气发生装置
公开(公告)号：US20130008781A1
公开(公告)日：2013-01-10
申请号：US13520237
申请日：2010-11-30
申请人： Akiou Kikuchi , Akifumi Yao , Tatsuo Miyazaki , Nobuyuki Tokunaga
发明人： Akiou Kikuchi , Akifumi Yao , Tatsuo Miyazaki , Nobuyuki Tokunaga
IPC分类号： C25B1/24
CPC分类号： C25B1/245 , C01B7/20 , C25B9/00 , C25B15/08 , F17C7/04
摘要： A fluorine gas generating apparatus includes an electrolytic cell where the molten salt is retained and which is separated and divided above the liquid level of the molten salt into a first gas chamber where a product gas mainly containing a fluorine gas generated at an anode immersed in the molten salt is led and a second gas chamber where a byproduct gas mainly containing a hydrogen gas generated at a cathode immersed in the molten salt is led, and a refining device refining the fluorine gas by coagulating with a cooling medium and trapping a hydrogen fluoride gas evaporated from the molten salt in the electrolytic cell and mixed in the product gas generated from the anode. The cooling medium for coagulation of the hydrogen fluoride gas in the refining device and discharged is re-used as a utility gas used at spots in the fluorine gas generating apparatus.
摘要翻译：氟气发生装置包括电解池，其中熔融盐保持并且在熔融盐的液面之上分离和分割成第一气室，在第一气室中主要含有在阳极中产生的氟气的产物浸没在引入熔融盐，引导第二气室，其中主要含有浸在熔盐中的阴极产生的氢气的副产物被引导，精炼装置通过用冷却介质凝结和捕获氟化氢气体来精炼氟气从电解池中的熔融盐中蒸发出来并混合在从阳极产生的产物气体中。精炼装置中的氟化氢气体的凝结用冷却介质被排出，作为在氟气发生装置的点处使用的有用气体。

5. 发明授权

US08864961B2 Fluorine gas generating apparatus 有权
标题翻译：氟气发生装置
公开(公告)号：US08864961B2
公开(公告)日：2014-10-21
申请号：US13520237
申请日：2010-11-30
申请人： Akiou Kikuchi , Akifumi Yao , Tatsuo Miyazaki , Nobuyuki Tokunaga
发明人： Akiou Kikuchi , Akifumi Yao , Tatsuo Miyazaki , Nobuyuki Tokunaga
IPC分类号： C25B9/00 , C25B1/24 , C25B15/08 , C01B7/20 , F17C7/04
CPC分类号： C25B1/245 , C01B7/20 , C25B9/00 , C25B15/08 , F17C7/04
摘要： A fluorine gas generating apparatus includes an electrolytic cell where the molten salt is retained and which is separated and divided above the liquid level of the molten salt into a first gas chamber where a product gas mainly containing a fluorine gas generated at an anode immersed in the molten salt is led and a second gas chamber where a byproduct gas mainly containing a hydrogen gas generated at a cathode immersed in the molten salt is led, and a refining device refining the fluorine gas by coagulating with a cooling medium and trapping a hydrogen fluoride gas evaporated from the molten salt in the electrolytic cell and mixed in the product gas generated from the anode. The cooling medium for coagulation of the hydrogen fluoride gas in the refining device and discharged is re-used as a utility gas used at spots in the fluorine gas generating apparatus.
摘要翻译：氟气发生装置包括电解池，其中熔融盐保持并且在熔融盐的液面之上分离和分割成第一气室，在第一气室中主要含有在阳极中产生的氟气的产物浸没在引入熔融盐，引导第二气室，其中主要含有浸在熔盐中的阴极产生的氢气的副产物被引导，精炼装置通过用冷却介质凝结和捕获氟化氢气体来精炼氟气从电解池中的熔融盐中蒸发出来并混合在从阳极产生的产物气体中。精炼装置中的氟化氢气体的凝结用冷却介质被排出，作为在氟气发生装置的点处使用的有用气体。

6. 发明申请

US20120298911A1 Dry Etching Agent and Dry Etching Method Using the Same 有权
标题翻译：干蚀刻剂和干法蚀刻方法
公开(公告)号：US20120298911A1
公开(公告)日：2012-11-29
申请号：US13576093
申请日：2011-01-25
申请人： Yasuo Hibino , Tomonori Umezaki , Akiou Kikuchi , Isamu Mori , Satoru Okamoto
发明人： Yasuo Hibino , Tomonori Umezaki , Akiou Kikuchi , Isamu Mori , Satoru Okamoto
IPC分类号： C09K13/00
CPC分类号： H01L21/31055 , C09K13/00 , H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3CCX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.
摘要翻译：根据本发明的干蚀刻剂包含（A）由化学式CF3CCX表示的氟化丙炔，其中X是H，F，Cl，Br，I，CH 3，CFH 2或CF 2 H; 和（B）选自O 2，O 3，CO，CO 2，COCl 2和COF 2中的至少一种气体; （C）选自由F2，NF3，Cl2，Br2，I2和YFn组成的组中的至少一种气体，其中Y是Cl，Br或I; n为1〜5的整数。和（D）选自CF4，CHF3，C2F6，C2F5H，C2F4H2，C3F8，C3F4H2，C3ClF3H和C4F8中的至少一种气体。这种干蚀刻剂具有小的环境负荷和宽的工艺窗口，并且可以应用于高纵横比处理，而不需要诸如基板激励的特殊操作。

7. 发明授权

US09093388B2 Dry etching agent and dry etching method using the same 有权
标题翻译：干蚀刻剂和干蚀刻法使用该方法
公开(公告)号：US09093388B2
公开(公告)日：2015-07-28
申请号：US13576093
申请日：2011-01-25
申请人： Yasuo Hibino , Tomonori Umezaki , Akiou Kikuchi , Isamu Mori , Satoru Okamoto
发明人： Yasuo Hibino , Tomonori Umezaki , Akiou Kikuchi , Isamu Mori , Satoru Okamoto
IPC分类号： C09K13/00 , C09K13/04 , C09K13/08 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , H01L21/311
CPC分类号： H01L21/31055 , C09K13/00 , H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3C≡CX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.
摘要翻译：根据本发明的干蚀刻剂包含（A）由化学式CF 3C≡CX表示的氟化丙炔，其中X为H，F，Cl，Br，I，CH 3，CFH 2或CF 2 H; 和（B）选自O 2，O 3，CO，CO 2，COCl 2和COF 2中的至少一种气体; （C）选自由F2，NF3，Cl2，Br2，I2和YFn组成的组中的至少一种气体，其中Y是Cl，Br或I; n为1〜5的整数。和（D）选自CF4，CHF3，C2F6，C2F5H，C2F4H2，C3F8，C3F4H2，C3ClF3H和C4F8中的至少一种气体。这种干蚀刻剂具有小的环境负荷和宽的工艺窗口，并且可以应用于高纵横比处理，而不需要诸如基板激励的特殊操作。

8. 发明授权

US08105566B2 Method for producing oxygen-containing halogenated fluoride 失效
标题翻译：含氧卤代氟化物的制造方法
公开(公告)号：US08105566B2
公开(公告)日：2012-01-31
申请号：US12921679
申请日：2009-02-16
申请人： Isamu Mori , Akiou Kikuchi
发明人： Isamu Mori , Akiou Kikuchi
IPC分类号： C01B11/24
CPC分类号： C01B11/24 , C01B7/24
摘要： Disclosed is a method for producing an oxygen-containing halogenated fluoride, wherein a gas-liquid reaction is used. This method is a method for producing an oxygen-containing halogenated fluoride represented by the general formula: XOmF (where X represents a halogen atom (Cl, Br or I) constituting a halogen fluoride and m represents 3 or 4), wherein a mixed gas containing the halogen fluoride and fluorine is reacted with an H2O source.
摘要翻译：公开了一种使用气液反应的含氧卤代氟化物的制造方法。该方法是由以下通式表示的含氧卤代氟化物的制造方法：XOmF（其中X表示构成卤素氟化物的卤素原子（Cl，Br或I），m表示3或4），其中混合气体含氟卤素和氟与H 2 O源反应。

9. 发明申请

US20110008242A1 Method for Producing Oxygen-Containing Halogenated Fluoride 失效
标题翻译：生产含氧卤代氟化物的方法
公开(公告)号：US20110008242A1
公开(公告)日：2011-01-13
申请号：US12921679
申请日：2009-02-16
申请人： Isamu Mori , Akiou Kikuchi
发明人： Isamu Mori , Akiou Kikuchi
IPC分类号： C01B7/24
CPC分类号： C01B11/24 , C01B7/24
摘要： Disclosed is a method for producing an oxygen-containing halogenated fluoride, wherein a gas-liquid reaction is used. This method is a method for producing an oxygen-containing halogenated fluoride represented by the general formula: XOmF (where X represents a halogen atom (Cl, Br or I) constituting a halogen fluoride and m represents 3 or 4), wherein a mixed gas containing the halogen fluoride and fluorine is reacted with an H2O source.
摘要翻译：公开了一种使用气液反应的含氧卤代氟化物的制造方法。该方法是由以下通式表示的含氧卤代氟化物的制造方法：XOmF（其中X表示构成卤素氟化物的卤素原子（Cl，Br或I），m表示3或4），其中混合气体含氟卤素和氟与H 2 O源反应。

10. 发明申请

US20110150747A1 Method for Manufacturing Oxygen-Containing Halogenated Fluoride 审中-公开
标题翻译：制造含氧卤代氟化物的方法
公开(公告)号：US20110150747A1
公开(公告)日：2011-06-23
申请号：US12991382
申请日：2009-04-28
申请人： Akiou Kikuchi , Isamu Mori
发明人： Akiou Kikuchi , Isamu Mori
IPC分类号： C01B7/24
CPC分类号： C01B11/24 , C01B7/24
摘要： According to the present invention, there is provided a method for manufacturing an oxygen-containing halogenated fluoride of the general formula: XO2F, comprising: reacting a halogen fluoride of the general formula: XF with a H2O source, where X represents a halogen element selected from Cl, Br and I in the general formulas.
摘要翻译：根据本发明，提供了一种制备通式XO 2 F的含氧卤代氟化物的方法，其包括：使通式XF的卤素氟化物与H 2 O源反应，其中X代表所选的卤素元素来自Cl，Br和I在通式中。

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