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1. 发明授权

US07629633B2 Vertical thin film transistor with short-channel effect suppression 有权
标题翻译：具有短沟道效应抑制的垂直薄膜晶体管
公开(公告)号：US07629633B2
公开(公告)日：2009-12-08
申请号：US11332483
申请日：2006-01-17
申请人： Isaac Wing Tak Chan , Arokia Nathan
发明人： Isaac Wing Tak Chan , Arokia Nathan
IPC分类号： H01L31/112
CPC分类号： H01L29/78642 , H01L29/66787 , H01L29/78696
摘要： A vertical thin film transistor (TFT) structure allows for a channel length to be scaled down, below that allowed by lateral TFT structures, to nanoscale (i.e., below 100 nm). However, while reducing the channel length, short-channel effects have been found in previous VTFT structures. Aspects of the new vertical TFT structure allow for the suppression of some of the short-channel effects. Advantageously, the capability of defining nanoscale channel length with short-channel effect suppression allows for p-channel vertical TFTs, where previously these were impractical. Furthermore, in aspects of the vertical TFT structure, the gate electrode is entirely vertical and by eliminating the horizontal overlap of the gate electrode over the drain electrode that present in earlier vertical TFT structures, parasitic gate-to-drain capacitance is eliminated. The vertical TFT structure provides size advantages over lateral TFTs and, furthermore, allows a TFT to be built at the intersection of electrode lines in an active-matrix configuration.
摘要翻译：垂直薄膜晶体管（TFT）结构允许将沟道长度按比例缩小到低于横向TFT结构允许的长度，达到纳米尺度（即，低于100nm）。然而，在减少通道长度的同时，在以前的VTFT结构中也发现了短通道效应。新的垂直TFT结构的方面允许抑制一些短信道效应。有利地，通过短沟道效应抑制来限定纳米尺度通道长度的能力允许p沟道垂直TFT，其中先前是不切实际的。此外，在垂直TFT结构的方面，栅极完全是垂直的，并且通过消除在较早的垂直TFT结构中存在的漏极上的栅电极的水平重叠，消除了寄生栅 - 漏电容。垂直TFT结构提供了超过横向TFT的尺寸优点，此外，允许在有源矩阵配置的电极线的交叉处构建TFT。

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