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1. 发明申请

US20160111603A1 Indium Zinc Oxide for Transparent Conductive Oxide Layer and Methods of Forming Thereof 审中-公开
标题翻译：用于透明导电氧化物层的氧化铟锌及其形成方法
公开(公告)号：US20160111603A1
公开(公告)日：2016-04-21
申请号：US14519274
申请日：2014-10-21
申请人： Intermolecular, Inc. , Epistar Corporation
发明人： Jianhua Hu , Ben Cardozo , Minh Huu Le , Sandeep Nijhawan , J.H. Yeh
IPC分类号： H01L33/42 , H01L33/32 , H01L33/00
CPC分类号： H01L33/42 , H01L31/1884 , H01L33/0095 , H01L33/32 , H01L2933/0016 , Y02E10/50
摘要： Provided are light emitting diodes (LEDs) and methods of fabricating such LEDs. Specifically, an LED has an epitaxial stack and current distribution layer disposed on and interfacing the epitaxial stack. The current distribution layer includes indium oxide and zinc oxide such that the concentration of indium oxide is between about 5% and 15% by weight. During fabrication, the current distribution layer is annealed at a temperature of less than about 500° C. or even at less than about 400° C. These low anneal temperature helps preserving the overall thermal budget of the LED while still yielding a current distribution layer having a low resistivity and low adsorption. A particular composition and method of forming the current distribution layer allows using lower annealing temperatures. In some embodiments, the current distribution layer is sputtered using indium oxide and zinc oxide targets at a pressure of less than 5 mTorr.
摘要翻译：提供了发光二极管（LED）和制造这种LED的方法。具体地说，LED具有外延层和电流分布层，其布置在外延层上并与外延层叠接合。电流分布层包括氧化铟和氧化锌，使得氧化铟的浓度在约5重量％至15重量％之间。在制造期间，电流分布层在小于约500℃或甚至低于约400℃的温度下退火。这些低退火温度有助于保持LED的总体热预算，同时仍然产生电流分布层具有低电阻率和低吸附性。形成电流分布层的特定组成和方法允许使用较低的退火温度。在一些实施例中，使用氧化铟和氧化锌靶在小于5mTorr的压力下溅射电流分布层。

2. 发明申请

US20140113403A1 High efficiency CZTSe by a two-step approach 审中-公开
标题翻译：高效CZTSe采用两步法
公开(公告)号：US20140113403A1
公开(公告)日：2014-04-24
申请号：US14139309
申请日：2013-12-23
申请人： INTERMOLECULAR INC.
发明人： Jeroen Van Duren , Ben Cardozo , Haifan Liang
IPC分类号： H01L31/18
CPC分类号： H01L21/02568 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02614 , H01L31/0322 , H01L31/0326 , H01L31/065 , H01L31/0749 , Y02E10/541
摘要： Methods of forming CZTS absorber layers in a TFPV device with a graded bandgap with or without a graded concentration are provided. In general, a Cu—Zn—Sn—(S, Se) precursor film is formed by sputtering. The Cu—Zn—Sn—(S, Se) precursor film can be formed as a single layer or as a multilayer stack. The composition may be uniform or graded throughout the thickness of the film. In some embodiments, the sputtering is performed in a reactive atmosphere including a chalcogen source (e.g. H2S, H2Se, etc.). The films, in conjunction with a subsequent selenization or anneal process, are converted to an absorber layer.
摘要翻译：提供了在具有或不具有分级浓度的梯度带隙的TFPV装置中形成CZTS吸收层的方法。通常，通过溅射形成Cu-Zn-Sn-（S，Se）前体膜。 Cu-Zn-Sn-（S，Se）前体膜可以形成为单层或多层叠层。组合物可以在膜的整个厚度上均匀或分级。在一些实施方案中，溅射是在包括硫族元素源（例如H 2 S，H 2 Se等）的反应性气氛中进行的。该膜与随后的硒化或退火工艺一起被转化为吸收层。

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